# Power MOSFET, N Channel, 30 V, 15 A, 0.0054 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2453426/)

**URL**: https://novapart.co/products/FDS8817NZ/power-mosfet-n-channel-30-v-15-a-00054-ohm-soic
**SKU**: FDS8817NZ
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5710
**Stock**: 10+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 2.5W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0054ohm |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 15A |
| Drain Source On State Resistance | 0.0054ohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2453426/)

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November 2008<br>**----- End of picture text -----**<br>


## 

## **N-Channel PowerTrench[®] MOSFET 30V, 15A, 7.0m** Ω **Features** 

Max rDS(on) = 7mΩ at VGS = 10V, ID = 15A Max rDS(on) = 10mΩ at VGS = 4.5V, ID =12.6A HBM ESD protection level of 3.8KV typical (note 3) 

High performance trench technology for extremely low rDS(on) High power and current handling capability 

## **General Description** 

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench[®] process that has been especially tailored to minimize the on-state resistance. 

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. 

RoHS compliant 

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D<br>D<br>D<br>D<br>G<br>SO-8 S<br>S<br>oO<br>S<br>Pin 1<br>**----- End of picture text -----**<br>


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D G<br>D S<br>D S<br>|<br>D S<br>**----- End of picture text -----**<br>


**MOSFET Maximum Ratings** TA = 25°C unless otherwise noted 

|**Symbol**<br>**Parameter**|||**Ratings**<br>**Units**|**Ratings**<br>**Units**|**Ratings**<br>**Units**|
|---|---|---|---|---|---|
|VDS<br>Drain to Source Voltage||||30|V|
|VGS<br>Gate to Source Voltage||||±20|V|
|ID<br>Drain Current        -Continuous<br>-Pulsed|Drain Current        -Continuous(Note 1a)<br>-Pulsed|||15<br>60|A|
|EAS<br>Single Pulse Avalanche Energy|(Note 4)|||181|mJ|
|PD<br>Power Dissipation<br>Power Dissipation|ation(Note 1a)<br>ation(Note 1b)|||2.5<br>1.0|W|
|TJ, TSTG<br>Operatingand Storage Junction Temperature Range|||-55 to +150|-55 to +150<br>°C||
|**Thermal Characteristics**||||||
|**Package Marking and Ordering Information**<br>RθJC<br>Thermal Resistance, Junction to Case(Note 1)<br>25<br>°C/W<br>RθJA<br>Thermal Resistance, Junction to Ambient(Note 1a)<br>50<br>RθJA<br>Thermal Resistance, Junction to Ambient(Note 1b)<br>125<br>**Device Marking**<br>**Device**<br>**Reel Size**<br>**Tape Width**<br>**Quantity**<br>FDS8817NZ<br>FDS8817NZ<br>13”<br>12mm<br>2500 units<br>~~BSa~~||||||



©2008 Fairchild Semiconductor Corporation **1** FDS8817NZ Rev.C1 

www.fairchildsemi.com 

## **Electrical Characteristics** TJ = 25°C unless otherwise noted 

|**Off Characteristics**<br>**On Characteristics(Note 2)**<br>**Dynamic Characteristics**<br>**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= 250μA,  VGS= 0V<br>30<br>V<br>ΔBVDSS<br>ΔTJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250μA,  referenced to 25°C<br>20<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 24V,   VGS = 0V<br>1<br>μA<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±20V,  VDS = 0V<br>±10<br>μA<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= 250μA<br>1<br>1.8<br>3<br>V<br>ΔVGS(th)<br>ΔTJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= 250μA,  referenced to 25°C<br>–6<br>mV/°C<br>rDS(on)<br>Static Drain to Source On Resistance<br>VGS= 10V,  ID= 15A<br>5.4<br>7<br>mΩ<br>VGS= 4.5V, ID= 12.6A<br>7.0<br>10<br>VGS= 10V,  ID= 15A    TJ= 125°C<br>7.5<br>11<br>gFS<br>Forward Transconductance<br>VDS= 5V,  ID= 15A<br>54<br>S<br>Ciss<br>Input Capacitance<br>VDS= 15V,  VGS= 0V,<br>f = 1MHz<br>1805<br>2400<br>pF<br>Coss<br>Output Capacitance<br>335<br>445<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>200<br>300<br>pF<br>Rg<br>Gate Resistance<br>f = 1MHz<br>1.4<br>Ω<br>~~Te~~<br>~~————~~|**Off Characteristics**<br>**On Characteristics(Note 2)**<br>**Dynamic Characteristics**<br>**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= 250μA,  VGS= 0V<br>30<br>V<br>ΔBVDSS<br>ΔTJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250μA,  referenced to 25°C<br>20<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 24V,   VGS = 0V<br>1<br>μA<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±20V,  VDS = 0V<br>±10<br>μA<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= 250μA<br>1<br>1.8<br>3<br>V<br>ΔVGS(th)<br>ΔTJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= 250μA,  referenced to 25°C<br>–6<br>mV/°C<br>rDS(on)<br>Static Drain to Source On Resistance<br>VGS= 10V,  ID= 15A<br>5.4<br>7<br>mΩ<br>VGS= 4.5V, ID= 12.6A<br>7.0<br>10<br>VGS= 10V,  ID= 15A    TJ= 125°C<br>7.5<br>11<br>gFS<br>Forward Transconductance<br>VDS= 5V,  ID= 15A<br>54<br>S<br>Ciss<br>Input Capacitance<br>VDS= 15V,  VGS= 0V,<br>f = 1MHz<br>1805<br>2400<br>pF<br>Coss<br>Output Capacitance<br>335<br>445<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>200<br>300<br>pF<br>Rg<br>Gate Resistance<br>f = 1MHz<br>1.4<br>Ω<br>~~Te~~<br>~~————~~|
|---|---|
|**Switching Characteristics**||
|td(on)<br>Turn-On DelayTime<br>VDD= 15V,  ID= 15A<br>VGS= 10V,  RGEN= 6Ω<br>11<br>22<br>ns<br>tr<br>Rise Time<br>13<br>26<br>ns<br>td(off)<br>Turn-Off DelayTime<br>25<br>40<br>ns||
|tf<br>Fall Time<br>7<br>14<br>ns||
|Qg<br>Total Gate Charge<br>VGS= 0V to 10V<br>VDD= 15V<br>ID= 15A<br>32<br>45<br>nC<br>Qg<br>Total Gate Charge<br>VGS= 0V to 5V<br>17<br>24<br>nC<br>Qgs<br>Gate to Source Charge<br>6<br>nC<br>Qgd<br>Gate to Drain “Miller” Charge<br>7<br>nC<br>~~————~~||
|**Drain-Source Diode Characteristics**||
|VSD<br>Source to Drain Diode  Forward Voltage<br>VGS = 0V,  IS = 2.1A(Note 2)<br>0.8<br>1.2<br>V<br>trr<br>Reverse RecoveryTime<br>IF= 15A,  di/dt = 100A/μs<br>24<br>36<br>ns<br>Qrr<br>Reverse RecoveryCharge<br>15<br>23<br>nC<br>~~—_———~~||
|**Notes:**||
|1.RθJAis the sum of  the junction-to-case and case-to- ambient  thermal resistance where the case thermal reference is defined  as the solder mounting surface of  thedrain||
|pins. RθJCis guaranteed by design  while RθJAis determined by the user’s board design.||
|**a)**50°C/W when mounted on a<br>1in2pad of 2 oz copper.<br>**b)**125°C/W when mounted on a<br>minimum pad .||



2. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2%. 

3. The diode connected between the gate and source serves only as protection against ESD . No gate overvoltage rating is implied. 

4. Starting TJ = 25°C, L = 3mH, IAS = 11A, VDD = 30V, VGS = 10V. 

www.fairchildsemi.com 

**2** 

FDS8817NZ Rev.C1 

**Typical Characteristics** TJ = 25°C unless otherwise noted 

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60 5<br>VGS = 10.0V PULSE DURATION = 80DUTY CYCLE = 0.5%MAX μ s VGS = 3.0V<br>VGS =  4.5V 4<br>45 V GS  = 4.0V<br>VGS = 3.5V VGS = 3.5V<br>3<br>30<br>2 VGS = 4.0V<br>15 VGS = 4.5V<br>1<br>VGS = 3.0V PULSE DURATION = 80DUTY CYCLE = 0.5%MAX μ s VGS = 10.0V<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 15 30 45 60<br>VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A)<br>Figure 1.  On-Region Characteristics Figure 2.  Normalized On-Resistance<br>vs Drain Current and Gate Voltage<br>1.8 26<br> ID = 15A ID =7.5A PULSE DURATION = 80DUTY CYCLE = 0.5%MAX μ s<br>1.6 VGS = 10V 22<br>1.4 18<br>1.2 14 TJ = 125 [o] C<br>1.0 10<br>0.8 6<br>TJ = 25 [o] C<br>0.6 2<br>-50 -25 0 25 50 75 100 125 150 3 4 5 6 7 8 9 10<br>TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3.  Normalized  On- Resistance                                         Figure 4.   On-Resistance vs  Gate to<br>vs Junction Temperature Source Voltage<br>60 100<br>PULSE DURATION = 80 μ s VGS = 0V<br>DUTY CYCLE = 0.5%MAX<br>50<br>10<br>VDD = 5V<br>40<br>1<br>TJ = 150 [o] C TJ = 25 [o] C<br>30<br>0.1<br>20 TJ = 25 [o] C<br>TJ = 150 [o] C TJ = -55 [o] C<br>0.01<br>10<br>TJ = -55 [o] C<br>0 0.001<br>1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 5.  Transfer Characteristics Figure 6.    Source to Drain  Diode<br>Forward Voltage vs Source Current<br>NORMALIZED<br>ID, DRAIN CURRENT (A)<br>DRAIN TO SOURCE ON-RESISTANCE<br>)<br>Ω<br>m<br>(<br>, DRAIN TO<br>NORMALIZED rDS(on)<br>SOURCE ON-RESISTANCE<br> DRAIN TO SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)<br>ID<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

**3** 

FDS8817NZ Rev.C1 

**Typical Characteristics** TJ = 25°C unless otherwise noted 

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10 3000<br>ID = 15A<br>8 Ciss<br>1000<br>6 VDD = 10V VDD = 15V<br>Coss<br>4 V DD =20V<br>C rss<br>2 f = 1MHz<br>VGS = 0V<br>0 100<br>0 5 10 15 20 25 30 35 0.1 1 10 30<br>Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7.  Gate Charge Characteristics Figure 8.  Capacitance vs Drain<br>to Source Voltage<br>20 1E-3<br>VGS = 0V<br>1E-4<br>10<br>TJ = 150 [o] C<br>1E-5<br>TJ = 25 [o] C<br>1E-6<br>T J  = 125 [o] C 1E-7<br>TJ = 25 [o] C<br>1E-8<br>1 1E-9<br>0.01 0.1 1 10 100 400 0 5 10 15 20 25 30<br>tAV, TIME IN AVALANCHE(ms) VGS, GATE TO SOURCE VOLTAGE(V)<br>Figure 9. Unclamped Inductive                                  Figure 10.  Gate Leakage Current vs Gate to<br>Switching Capability Source Voltage<br>15 100<br>rDS(on) LIMITED<br>100us<br>12<br>10<br>VGS = 10V<br>1s<br>9<br>1 10ms<br>6 VGS = 4.5V SINGLE PULSE 100ms<br>TJ = MAX RATED 1s<br>0.1 R θ JA = 125 [o] C/W<br>3 R θ JA = 50oC/W TA = 25 [o] C 10sDC<br>0 0.01<br>25 50 75 100 125 150 0.01 0.1 1 10 100<br>TA, AMBIENT TEMPERATURE (oC) VDS, DRAIN to SOURCE VOLTAGE (V)<br>Figure 11.  Maximum Continuous Drain                              Figure 12.   Forward Bias Safe<br>Current  vs Ambient Temperature  Operating Area<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLTAGE(V)<br>GS<br>V<br>, AVALANCHE CURRENT(A)<br>IAS ,  GATE LEAKAGE CURRENT(A)Ig<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

**4** 

FDS8817NZ Rev.C1 

**Typical Characteristics** TJ = 25°C unless otherwise noted 

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2000<br>1000<br>VGS = 10V FOR TEMPERATURES<br>ABOVE 25 [o] C DERATE PEAK<br>CURRENT AS FOLLOWS:<br>100 I = I25  150 ---------------------- 125 – TA -<br>10 TA = 25 [o] C<br>SINGLE PULSE<br>1<br>R θ JA = 125 [o] C/W<br>0.2<br>10-4 10-3 10-2 10-1 1 10 102 103<br>t, RECTANGULAR PULSE DURATION (s)<br>Figure 13.  Single  Pulse Maximum Power Dissipation<br>2<br>1 DUTY CYCLE-DESCENDING ORDER<br>D = 0.5<br>      0.2<br>0.1       0.1       0.05 PDM<br>      0.02<br>      0.01<br>t 1<br>0.01 t2<br>NOES:<br>SINGLE PULSE DUTY FACTOR: D = t1/t2<br>0.001 R θ JA = 125 [o] C/W PEAK T J  = P DM  x Z θJA  x R θJA  + T A<br>0.0002<br>10-4 10-3 10-2 10-1 1 10 102 103<br>t, RECTANGULAR PULSE DURATION (s)<br>Figure 14.  Transient Thermal Response Curve<br>IMPEDANCE, ZJA θ<br>NORMALIZED THERMAL<br>IMPEDANCE, ZJA θ<br>NORMALIZED THERMAL<br>**----- End of picture text -----**<br>


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FDS8817NZ Rev.C1<br>**----- End of picture text -----**<br>


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www.fairchildsemi.com<br>**----- End of picture text -----**<br>


**5** 

## **TRADEMARKS** 

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 

Build it Now™ FRFET[®] Programmable Active Droop™ CorePLUS™CorePOWER™ Global Power ResourceGreen FPS™[SM] QFETQS™[®] Pwethe wer tm _CROSSVOLT_ ™ Green FPS™ e-Series™ Quiet Series™ TinyBoost™ CTL™ GTO™ RapidConfigure™ TinyBuck™ Current Transfer Logic™ IntelliMAX™ TinyLogicTINYOPTO™[®] EcoSPARK[®] ISOPLANAR™ ™ EfficentMax™ MegaBuck™ Saving our world, 1mW /W /kW at a time™ TinyPower™ EZSWITCH™ * MICROCOUPLER™ SmartMax™ TinyPWM™ ™ MicroFET™ SMART START™ TinyWire™ MicroPak™ SPM[®] μSerDes™ ® MillerDrive™ STEALTH™ ~~EF~~ tm MotionMax™ SuperFET™ Z.... Fairchild[®] Motion-SPM™ SuperSOT™-3 UHC[®] Fairchild Semiconductor[®] OPTOLOGIC[®] SuperSOT™-6 Ultra FRFET™ FACT Quiet Series™ OPTOPLANAR[®] SuperSOT™-8 UniFET™ FACT[®] ® SupreMOS™ VCX™ FASTFastvCore™[®] tm SyncFET™ ® VisualMax™XS™ * PDP SPM™ FPS™FlashWriter[® ] Power-SPM™ The Power Franchise DS ceNeRAl[®] F-PFS™ PowerTrench[®] PowerXS™ 

* EZSWITCH™ and FlashWriter[®] are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 

## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 

## **LIFE SUPPORT POLICY** 

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 

1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. 

## **ANTI-COUNTERFEITING POLICY** 

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. 

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

## **PRODUCT STATUS DEFINITIONS Definition of Terms** 

|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications may<br>change in any manner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later date.<br>Fairchild Semiconductor reserves the right to make changes at any time without notice to<br>improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to<br>make changes at any time without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild<br>Semiconductor. The datasheet is for reference information only.|



Rev. I37 



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