# Dual MOSFET, N Channel, 30 V, 30 V, 7.9 A, 7.9 A, 0.017 ohm ![Product image](https://novapart.co/image/farnell:2453423/) **URL**: https://novapart.co/products/FDS6986AS/dual-mosfet-n-channel-30-v-79-a-0017-ohm **SKU**: FDS6986AS **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Dual MOSFETs **Price**: €0.2980 **Stock**: 10+ ## Description Transistor Polarity:Dual N Channel; Continuous Drain Current Id:7.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (27-Jun-2024) | | No. Of Pins | 8Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Transistor Case Style | SOIC | | Operating Temperature Max | 150°C | | Power Dissipation N Channel | 2W | | Power Dissipation P Channel | 2W | | Drain Source Voltage Vds N Channel | 30V | | Drain Source Voltage Vds P Channel | 30V | | Continuous Drain Current Id N Channel | 7.9A | | Continuous Drain Current Id P Channel | 7.9A | | Drain Source On State Resistance N Channel | 0.017ohm | | Drain Source On State Resistance P Channel | 0.017ohm | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2453423/) ## **Is Now Part of** **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## March 2005 ## **FDS6986AS** ## **Dual Notebook Power Supply N-Channel PowerTrench**[®] **SyncFET[™] General Description Features** The FDS6986AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6986AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. - **Q2** : Optimized to minimize conduction losses Includes SyncFET Schottky body diode - 7.9A, 30V RDS(on) = 20 mΩ @ VGS = 10V RDS(on) = 28 mΩ @ VGS = 4.5V - **Q1** : Optimized for low switching losses Low gate charge (10 nC typical) - 6.5A, 30V RDS(on) = 29 mΩ @ VGS = 10V RDS(on) = 38 mΩ @ VGS = 4.5V **==> picture [434 x 370] intentionally omitted <==** **----- Start of picture text -----**
Q2
D 5 4
D
D cH 6 @-o 3
D
7 Q1 2
SO-8
G 8 1
S tat
S
Pin 1 S SO-8 d S ti
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter Q2 Q1 Units
VDSS Drain-Source Voltage 30 30 V
VGSS Gate-Source Voltage ±20 ±16 V
ID Drain Current - Continuous (Note 1a) 7.9 6.5 A
- Pulsed 30 20
PD Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
$$
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6986AS FDS6986AS 13” 12mm 2500 units
FDS6986AS FDS6986AS_NL (Note 4) 13” 12mm 2500 units
es es
©2005 Fairchild Semiconductor Corporation FDS6986AS Rev A(X)
G2
S2
G1
S1/D2
D2/S1
D2/S1
D1
D1
**----- End of picture text -----**
FDS6986AS Rev A(X) **==> picture [456 x 632] intentionally omitted <==** **----- Start of picture text -----**
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown VGS = 0 V, ID = 1 mA Q2 30 V
Voltage VGS = 0 V, ID = 250 uA Q1 30
∆BVDSS Breakdown Voltage ID = 1 mA, Referenced to 25°C Q2 31 mV/°C
∆TJ Temperature Coefficient ID = 250 µA, Referenced to 25°C Q1 23
IDSS Zero Gate Voltage Drain VDS = 24 V, VGS = 0 V Q2 500 µA
Current Q1 1
IGSS Gate-Body Leakage VGS = ±20 V, VDS = 0 V Q2
±100 nA
VGS = ±16 V, VDS = 0 V Q1
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA Q2 1 1.7 3 V
VDS = VGS, ID = 250 µA Q1 1 1.9 3
∆VGS(th) Gate Threshold Voltage ID = 1 mA, Referenced to 25°C Q2 –3.2 mV/°C
∆TJ Temperature Coefficient ID = 250 uA, Referenced to 25°C Q1 –4.0
RDS(on) Static Drain-Source VGS = 10 V, ID = 7.9 A Q2 17 20 mΩ
On-Resistance VGS = 10 V, ID = 7.9 A, TJ = 125°C 25 32
VGS = 4.5 V, ID = 7 A 22 28
VGS = 10 V, ID = 6.5 A Q1 21 29
VGS = 10 V, ID = 6.5 A, TJ = 125°C 32 49
VGS = 4.5 V, ID = 5.6 A 32 38
ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V Q2 30 A
Q1 20
gFS Forward Transconductance VDS = 5 V, ID = 7.9 A Q2 25 S
VDS = 5 V, ID = 6.5 A Q1 15
Dynamic Characteristics
Ciss Input Capacitance Q2 550 pF
VDS = 10 V, VGS = 0 V, Q1 720
Coss Output Capacitance Q2 180 pF
f = 1.0 MHz Q1 120
Crss Reverse Transfer Capacitance Q2 70 pF
Q1 60
RG Gate Resistance VGS = 15mV, f = 1.0 MHz Q2 3.2 Ω
Q1 1.2
Switching Characteristics (Note 2)
td(on) Turn-On Delay Time Q2 9 18 ns
Q1 10 19
tr Turn-On Rise Time VDD = 15 V, ID = 1 A, Q2 6 12 ns
Q1 4 8
td(off) Turn-Off Delay Time VGS = 10V, RGEN = 6 Ω Q2 25 40 ns
Q1 24 39
tf Turn-Off Fall Time Q2 4 8 ns
Q1 3 6
td(on) Turn-On Delay Time Q2 11 20 ns
Q1 10 20
tr Turn-On Rise Time VDD = 15 V, ID = 1 A, Q2 15 26 ns
Q1 9 18
td(off) Turn-Off Delay Time VGS = 4.5V, RGEN = 6 Ω Q2 15 26 ns
Q1 13 23
tf Turn-Off Fall Time Q2 6 12 ns
Q1 3 6
**----- End of picture text -----**
FDS6986AS Rev A (X) |**Electrical Characteristics(continued)**
TA= 25°C unless otherwise noted|**Electrical Characteristics(continued)**
TA= 25°C unless otherwise noted|**Electrical Characteristics(continued)**
TA= 25°C unless otherwise noted|**Electrical Characteristics(continued)**
TA= 25°C unless otherwise noted||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Conditions**|**Type**|**Min**|**Typ**|**Max**|**Units**| |**Switching Characteristics ** (Note 2)|||||||| |Qg(TOT)
|Total Gate Charge, Vgs = 10V|Q2:
VDS= 15 V, ID= 7.9 A
Q1:
VDS= 15 V, ID= 6.5 A|Q2
Q1||10
12|14
17|nC| |Qg
|Total Gate Charge, Vgs = 5V||Q2
Q1||5.6
6.5|8
9|nC| |Qgs
|Gate-Source Charge||Q2
Q1||2.0
2.3||nC| |Qgd
|Gate-Drain Charge||Q2
Q1||1.5
2.1||nC| |**Drain–Source Diode Characteristics and Maximum Ratings**|||||||| |IS
|Maximum Continuous Drain-Source Diode Forward Current||Q2
Q1|||3.0
1.3|A| |Trr
|Reverse Recovery Time|IF= 10 A,
diF/dt= 300 A/µs
(Note 3)|Q2||15||ns| |Qrr
|Reverse Recovery Charge||||6||nC| |Trr
|Reverse Recovery Time|IF= 6.5 A,
diF/dt= 100 A/µs
(Note 3)|Q1||20||ns| |Qrr
|Reverse Recovery Charge||||12||nC| |VSD

|Drain-Source Diode Forward
Voltage|VGS= 0 V, IS= 2.3 A(Note 2)
VGS=0V,IS= 1.3A (Note 2)|Q2
Q1||0.6
0.8|0.7
1.2|V| **Notes:** **1.** RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. **==> picture [80 x 82] intentionally omitted <==** a) 78°C/W when b) 125°C/W when c) 135°C/W when mounted on a mounted on a mounted on a 0.5in[2] pad of 2 0.02 in[2] pad of minimum pad. oz copper 2 oz copper Scale 1 : 1 on letter size paper **2.** Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% **3.** See “SyncFET Schottky body diode characteristics” below. **4.** FDS6986AS_NL is a lead free product. FDS6986AS_NL marking will appear on the reel label. FDS6986AS Rev A (X) ## **Typical Characteristics: Q2** **==> picture [429 x 540] intentionally omitted <==** **----- Start of picture text -----**
30 2
VGS = 10V 3.5V VGS = 3.0V
25
1.75
6.0V 4.5V
20
3.0V 1.5
3.5V
15
4.0V
1.25 4.5V
10 5.0V
6.0V
2.5V 1 10V
5
0 0.75
0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6 0.065
VIDGS = 7.9A = 10V ID = 3.95A
1.4 0.055
1.2 0.045
1 0.035 T A = 125 [o] C
0.8 0.025
TA = 25 [o] C
0.6 0.015
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with
Temperature. Gate-to-Source Voltage.
100
30 VGS = 0V
VDS = 5V
10
25
20 1 TA = 125 [o] C
15 0.1
25 [o] C
10 TA = 125 [o] C 0.01
-55 [o] C -55 [o] C
5 0.001
25 [o] C
0 0.0001
1.5 2 2.5 3 3.5 0 0.2 0.4 0.6 0.8 1 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
, NORMALIZED
DS(ON)
, DRAIN CURRENT (A)ID R
DRAIN-SOURCE ON-RESISTANCE
, NORMALIZED
DS(ON) , ON-RESISTANCE (OHM)
R DS(ON)
R
DRAIN-SOURCE ON-RESISTANCE
, DRAIN CURRENT (A)ID
, REVERSE DRAIN CURRENT (A)IS
**----- End of picture text -----**
FDS6986AS Rev A (X) ## **Typical Characteristics: Q2** **==> picture [424 x 309] intentionally omitted <==** **----- Start of picture text -----**
10 800
f = 1MHz
ID = 7.9A VDS = 10V 20V VGS = 0 V
8
600
15V Ciss
6
400
4
Coss
200
2
Crss
0 0
0 3 6 9 12 0 4 8 12 16 20
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100 50
SINGLE PULSE
100µs RθJA = 135°C/W
10 RDS(ON) LIMIT 1ms 40 TA = 25°C
10ms
100ms 30
1s
1 10s
DC 20
V GS = 10V
0.1 SINGLE PULSE
RθJA = 135 [o] C/W 10
T A = 25 [o] C
0.01 0
0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)
CAPACITANCE (pF)
, GATE-SOURCE VOLTAGE (V)
GS
V
, DRAIN CURRENT (A)ID
P(pk), PEAK TRANSIENT POWER (W)
**----- End of picture text -----**
**Figure 9. Maximum Safe Operating Area.** **Figure 10. Single Pulse Maximum Power Dissipation.** **==> picture [51 x 6] intentionally omitted <==** **----- Start of picture text -----**
FDS6986AS Rev A (X)
**----- End of picture text -----**
## **Typical Characteristics Q1** **==> picture [431 x 539] intentionally omitted <==** **----- Start of picture text -----**
20 3.4
VGS = 10V 4.0V VGS = 3.0V
3
6.0V 4.5V
15
2.6
5.0V
3.5V
3.5V
2.2
10 4.0V
1.8
4.5V
5.0V
5 3.0V 1.4 6.0V
1 10V
2.5V
0 0.6
0 0.5 1 1.5 2 2.5 3 0 5 10 15 20
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6 0.135
VIDGS = 6.5A = 10V 0.115 ID = 3.3 A
1.4
0.095
1.2
0.075
1 TA = 125 [o] C
0.055
0.8 TA = 25 [o] C
0.035
0.6 0.015
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation with Figure 14. On-Resistance Variation with
Temperature. Gate-to-Source Voltage.
100
20 VGS = 0V
VDS = 5V TA = -55 [o] C 10
125 [o] C
16
1
25 [o] C
12 TA = 125 [o] C
0.1
25 [o] C
8
0.01
-55 [o] C
4 0.001
0 0.0001
1.5 2 2.5 3 3.5 4 4.5 0 0.2 0.4 0.6 0.8 1 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
, NORMALIZED
DS(ON)
, DRAIN CURRENT (A)ID R
DRAIN-SOURCE ON-RESISTANCE
, NORMALIZED
DS(ON) , ON-RESISTANCE (OHM)
R DS(ON)
R
DRAIN-SOURCE ON-RESISTANCE
, DRAIN CURRENT (A)ID
, REVERSE DRAIN CURRENT (A)IS
**----- End of picture text -----**
FDS6986AS Rev A (X) ## **Typical Characteristics Q1** **==> picture [423 x 488] intentionally omitted <==** **----- Start of picture text -----**
10 1000
f = 1MHz
ID = 6.5A VGS = 0 V
8 800
VDS = 10V
20V Ciss
6 600
15V
4 400
Coss
2 200
Crss
0 0
0 3 6 9 12 15 0 4 8 12 16 20
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics.
100 50
SINGLE PULSE
100µs RθJA = 135°C/W
10 RDS(ON) LIMIT 1ms 40 T A = 25°C
10ms
100ms 30
1s
1 10s
DC 20
V GS = 10V
0.1 SINGLE PULSE
RθJA = 135 [o] C/W 10
T A = 25 [o] C
0.01 0
0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)
Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2 R θJA (t) = r(t) * R θJA
0.1 0.1 RθJA = 135 °C/W
0.05
P(pk)
0.02
0.01 t 1
0.01 t2
SINGLE PULSE TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
CAPACITANCE (pF)
, GATE-SOURCE VOLTAGE (V)
GS
V
, DRAIN CURRENT (A)ID
P(pk), PEAK TRANSIENT POWER (W)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
**----- End of picture text -----**
**==> picture [275 x 26] intentionally omitted <==** **----- Start of picture text -----**
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
**----- End of picture text -----**
FDS6986AS Rev A (X) ## **Typical Characteristics** (continued) ## **SyncFET Schottky Body Diode Characteristics** Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 22 shows the reverse recovery characteristic of the FDS6986AS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. **==> picture [437 x 432] intentionally omitted <==** **----- Start of picture text -----**
reverse recovery characteristic of the FDS6986AS. 0.1
0.01
:. a a oe E 125 [o] C
t 0.001 E
100 [o] C
0.0001
:t::
0.00001
25 [o] C
:1;:c
0.000001
0 5 10 15 20 25 30
4 VDS, REVERSE VOLTAGE (V)
: : i :
Figure 24. SyncFET body diode reverse
: t : : leakage versus drain-source voltage and
temperature.
12.5nS/DIV
Figure 22. FDS6986AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 23 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6690A).
12.5nS/DIV
, REVERSE LEAKAGE CURRENT (A)
IDSS
0.8A/DIV
0.8A/DIV
**----- End of picture text -----**
## **Figure 23. Non-SyncFET (FDS6690A) body diode reverse recovery characteristic.** FDS6986AS Rev A (X) ## **Typical Characteristics** **==> picture [418 x 518] intentionally omitted <==** **----- Start of picture text -----**
L
VDS BVDSS
VGS tP VDS
RGE DUT + IAS
VDD VDD
0V -
VGS tp IAS
vary tP to obtain
required peak IAS 0.01Ω
tAV
Figure 25. Unclamped Inductive Load Test Figure 26. Unclamped Inductive
Circuit Waveforms
Drain Current
Same type as
+
50kΩ
10V
- 10µF 1µF +
- VDD QG(TOT)
VGS 10V
DUT
VGS QGS QGD
I
g(REF
Charge, (nC)
Figure 27. Gate Charge Test Circuit Figure 28. Gate Charge Waveform
tON tOFF
RL td(ON) td(OFF
VDS VDS 90% tr ) tf 90%
VGS +
10% 10%
RGEN DUT VDD 0V
- 90%
VGS
VGS 50% 50%
Pulse Width ≤ 1µs
Duty Cycle ≤ 0.1% 0V 10% Pulse Width
Figure 29. Switching Time Test Figure 30. Switching Time Waveforms
Circuit
**----- End of picture text -----**
FDS6986AS Rev A (X) ## **TRADEMARKS** The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. |ACEx™|FAST|IntelliMAX™|POP™|SPM™| |---|---|---|---|---| |ActiveArray™|FASTr™|ISOPLANAR™|Power247™|Stealth™| |
Bottomless™|
FPS™|LittleFET™|PowerEdge™|SuperFET™| |CoolFET™|FRFET™|MICROCOUPLER™|PowerSaver™|SuperSOT™-3| |_CROSSVOLT_™|GlobalOptoisolator™|MicroFET™|PowerTrench|SuperSOT™-6| |DOME™|GTO™|MicroPak™|QFET|SuperSOT™-8| |EcoSPARK™|HiSeC™|MICROWIRE™|QS™|SyncFET™| |E2CMOS™|I2C™|MSX™|QT Optoelectronics™|TinyLogic| |EnSigna™|_i-Lo_™|MSXPro™|Quiet Series™|TINYOPTO™| |FACT™|ImpliedDisconnect™|OCX™|RapidConfigure™|TruTranslation™| |FACT Quiet Series™||OCXPro™|RapidConnect™|UHC™| |Across the board. Around the world.™
The Power Franchise||OPTOLOGIC
OPTOPLANAR™|µSerDes™
SILENT SWITCHER|UltraFET
UniFET™| |Programmable Active Droop™||PACMAN™|SMART START™|VCX™| ## **DISCLAIMER** FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. ## **LIFE SUPPORT POLICY** FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. ## **PRODUCT STATUS DEFINITIONS** ## **Definition of Terms** |**Definition of Terms**||| |---|---|---| |**Datasheet Identification**|**Product Status**|**Definition**| |Advance Information|Formative or
In Design|This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.| |Preliminary|First Production|This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.| |No Identification Needed|Full Production|This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.| |Obsolete|Not In Production|This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
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