# Power MOSFET, N Channel, 60 V, 7 A, 0.028 ohm, SOIC, Surface Mount ![Product image](https://novapart.co/image/farnell:3003909/) **URL**: https://novapart.co/products/FDS5690/power-mosfet-n-channel-60-v-7-a-0028-ohm-soic **SKU**: FDS5690 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.4650 **Stock**: 10+ ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.022ohm; Rds(on; Available until stocks are exhausted Alternative available ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 8Pins | | Channel Type | N Channel | | Product Range | PowerTrench | | Qualification | - | | Power Dissipation | 2.5W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | SOIC | | Drain Source Voltage Vds | 60V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 7A | | Drain Source On State Resistance | 0.028ohm | | Gate Source Threshold Voltage Max | 2.5V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3003909/) ## **FDS5690** ## **60V N-Channel PowerTrench MOSFET** ## **General Description** ## **Features** This Semiconductor's N-Channel advanced MOSFET PowerTrench is produced process using that ON • 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V R = 0.033 Ω @ V = 6 V. has been especially tailored to minimize on-state DS(on) GS resistance and yet maintain superior switching performance. • Low gate charge (23nC typical). These devices are well suited for low voltage and battery • Fast switching speed. powered applications where low in-line power loss and • High performance trench technology for extremely fast switching are required. low R . DS(ON) **Applications** • High power and current handling capability. **==> picture [369 x 118] intentionally omitted <==** **----- Start of picture text -----**
• DC/DC converter
• Motor drives
D
D 5 4
D
D 6 3
7 2
G
S S 8 1
SO-8 S
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Absolute Maximum Ratings [T] A [ = 25] [°] [C unless otherwise noted]
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Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 60 V
VGSS Gate-Source Voltage ± [20] V
ID Drain Current - Continuous (Note 1a) 7 A
- Pulsed 50
PD Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.2
(Note 1c) 1
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 ° [C]
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 ° [C/W]
es RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 ° [C/W]
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDS5690 FDS5690 13 ’’ 12mm 2500 units
SE —
2000 Semiconductor Components Industries, LLC. Publication Order Number:
October-2017, Rev.3 FDS5690/D
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 2000 Semiconductor Components Industries, LLC. October-2017, Rev.3 |**DMOS Electrical Characteristics**TA= 25°C unless otherwise noted|**DMOS Electrical Characteristics**TA= 25°C unless otherwise noted|**DMOS Electrical Characteristics**TA= 25°C unless otherwise noted||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Units**| |**Off Characteristics**||||||| |BVDSS|Drain-Source Breakdown Voltage|VGS= 0 V, ID= 250µA|60|||V| |∆BVDS~~S~~
∆TJ|Breakdown Voltage Temperature
Coefficient|ID= 250µA, Referenced to 25°C||57||mV/°C| |IDSS|Zero Gate Voltage Drain Current|VDS= 48 V, VGS= 0 V|||1|µA| |IGSSF|Gate-BodyLeakage Current, Forward|VGS= 20 V, VDS= 0 V|||100|nA| |IGSSR|Gate-BodyLeakage Current, Reverse|VGS= -20 V, VDS= 0 V|||-100|nA| |**On Characteristics** (Note 2)||||||| |VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 250µA|2|2.5|4|V| |∆VGS(th~~)~~
∆TJ|Gate Threshold Voltage
Temperature Coefficient|ID= 250µA, Referenced to 25°C||-5.9||mV/°C| |RDS(on)|Static Drain-Source
On-Resistance|VGS= 10 V, ID= 7 A
VGS= 10 V, ID= 7 A, TJ=125°C
VGS= 6 V, ID= 6.5 A||0.022
0.037
0.025|0.028
0.050
0.033|Ω| |ID(on)|On-State Drain Current|
VGS= 10 V, VDS= 5 V|25|||A| |gFS|Forward Transconductance|VDS= 10 V, ID= 7 A||24||S| |**Dynamic Characteristics**||||||| |
Ciss|
Input Capacitance|VDS= 30 V, VGS= 0 V,
f = 1.0 MHz||1107||pF| |Coss|Output Capacitance|||149||pF| |Crss|Reverse Transfer Capacitance|||72||pF| |**Switching Characteristics** (Note 2)||||||| |
td(on)|
Turn-On DelayTime|VDD= 30 V, ID= 1 A,
VGS= 10 V, RGEN= 6Ω||10|18|ns| |tr|Turn-On Rise Time|||9|18|ns| |td(off)|Turn-Off DelayTime|||24|39|ns| |tf|Turn-Off Fall Time|||10|18|ns| |Qg|Total Gate Charge|VDS= 30 V, ID= 7 A,
VGS= 10 V,||23|32|nC| |Qgs|Gate-Source Charge|||4||nC| |Qgd|Gate-Drain Charge|||6.8||nC| |**Drain-Source Diode Characteristics and Maximum Ratings**||||||| |
IS|
Maximum Continuous Drain-Source Diode Forward Current||||2.1|A| |VSD|Drain-Source Diode Forward Voltage|VGS= 0 V, IS= 2.1 A(Note 2)||0.75|1.2|V| **Notes: 1.** RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. **==> picture [84 x 69] intentionally omitted <==** a) 50° C/W when b) 105° C/W when c) 125° C/W when mounted on a 0.5 in[2] mounted on a 0.02 in[2] mounted on a 0.003 in[2] pad of 2 oz. copper. pad of 2 oz. copper. pad of 2 oz. copper. Scale 1 : 1 on letter size paper **2.** Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 2 ## **Typical Characteristics** **==> picture [441 x 532] intentionally omitted <==** **----- Start of picture text -----**
50 2
40 V6.0VGS = 10V 5.0V [s)z< 1.8 VGS = 4.0V ff
1.6
30 wz / 4.5V : Ww3
20 =zey‘58E" : [O] 1.4 4.5V 5.0V id
4.0V 52 1.2 6.0V 7.0V —
10 | ae Zzz2 1 cd— 10V —|
3.5V
0 0.8
0 1 2 3 4 5 6 0 10 20 30 40 50
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation
Figure 1. On-Region Characteristics.
with Drain Current and Gate Voltage.
2 0.07
Ww[s) 1.8 ID = 7A _ ID = 3.5A
VGS = 10V 0.06
z S a e e
1.6 : .
0.05
1.4 — z TA = 125oC
0.04
1.2
0.03
1
0.8 fe} 0.02 TA = 25oC
z
0.6 0.01
0.4 0
-50 -25 0 25 50 75 100 125 150 3 4 5 6 7 8 9 10
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation
with Temperature. with Gate-to-Source Voltage.
50 100
VDS = 5V TA = -55oC 25oC < 10 e VGS = 0V ee
40 125oC .5 —— TA = 125oC AZeTZAOE fe
y = 1 re ee
30 E —YFyA 25oC |——EE
20 8 : «3w 0.010.1 a ooafffa | ae ea -55oC aa —=>a
& _—————— ee
10 > 0.001 —
fff
0 pe| . 0.0001 —ffff f o o
2 3 4 5 6 0 0.2 0.4 0.6 0.8 1 1.2 1.4
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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www.onsemi.com 3 ## **Typical Characteristics** (continued) **==> picture [414 x 130] intentionally omitted <==** **----- Start of picture text -----**
10 1600
ID = 7A f = 1MHz
VDS = 10V Vu 20V VGS = 0 V
8
30V 1200
CISS
6
800
4
400
2
COSS
CRSS
0 0
0 5 10 15 20 25 0 10 20 30 40 50 60
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
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**Figure 7. Gate Charge Characteristics.** **Figure 8. Capacitance Characteristics.** **==> picture [417 x 336] intentionally omitted <==** **----- Start of picture text -----**
100 SS 50 \ SINGLE PULSE
25a 10 peeNOSLi RDS(ON) LIMIT NSSCONUTRR 10ms1ms100µ SSastiti s SCoTHPSS 40 MH RTAθJA=25=125oC oC/W
30
100ms
Bo 1 ESS 1s en
10s 20
o VGS S = 10V DC see 1a
: 0.1 SINGLE PULSERθJA = 125oC/W S esuiill 10
TA = 25oC
0.01 marina 0 Wiime ae
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1 SS
0.5 D = 0.5
e ee
0.20.1 0.2 0.1 R (t) = r(t) * R R = 125θ [JA] θ [JA] ° C/Wθ [JA]
0.05 0.05
P(pk)
0.02
0.02 0.01 t 1
0.01 eri e Single Pulse ter e et ne tit M S t 2
0.005 T - T = P * R (t)J A θ [JA]
0.0020.001 Si ee Duty Cycle, D = t /t1 2
0.0001 0.001 0.01 0.1 1 10 100 300
t , TIME (sec) 1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
POWER (W)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
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