# Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 4.5 A, 3.5 A, 0.055 ohm
**URL**: https://novapart.co/products/FDS4559-F085/dual-mosfet-complementary-n-and-p-channel-60-v-45
**SKU**: FDS4559-F085
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.7050
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 8Pins |
| Channel Type | Complementary N and P Channel |
| Product Range | PowerTrench Series |
| Qualification | - |
| Transistor Case Style | SOIC |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 2W |
| Power Dissipation P Channel | 2W |
| Drain Source Voltage Vds N Channel | 60V |
| Drain Source Voltage Vds P Channel | 60V |
| Continuous Drain Current Id N Channel | 4.5A |
| Continuous Drain Current Id P Channel | 3.5A |
| Drain Source On State Resistance N Channel | 0.055ohm |
| Drain Source On State Resistance P Channel | 0.105ohm |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3616905/)
## **ON Semiconductor**
## **Is Now**
**==> picture [390 x 69] intentionally omitted <==**
**To learn more about onsemi™, please visit our website at www.onsemi.com**
**onsemi** and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
**==> picture [466 x 564] intentionally omitted <==**
**----- Start of picture text -----**
-
FDS4559 F085
60V Complementary PowerTrench [] MOSFET
Features
General Description • Q1 : N-Channel
This complementary MOSFET device is produced using ON Semiconductor’s advanced PowerTrench 4.5 A, 60 V RDS(on) = 55 mΩ @ VGS = 10V
process that has been especially tailored to RDS(on) = 75 mΩ @ VGS = 4.5V
minimize the on-state resistance and yet • Q2 : P-Channel
maintain low gate charge for superior switching
performance. –3.5 A, –60 V RDS(on) = 105 mΩ @ VGS = –10V
Applications RDS(on) = 135 mΩ @ VGS = –4.5V
• DC/DC converter
• Qualified to AEC Q101
• Power management
• LCD backlight inverter • RoHS Compliant
DD2 5 Q2 4
DD2
DD1
6 3
DD1
Q1
7 2
SO-8 S2G2G
G1 S 8 1
S1 S
Pin 1 & SO-8 S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter Q1 Q2 Units
VDSS Drain-Source Voltage 60 –60 V
VGSS Gate-Source Voltage ±20 ±20 V
ID Drain Current - Continuous (Note 1a) 4.5 –3.5 A
- Pulsed 20 –20
PD Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1.2
(Note 1c) 2
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
I
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS4559 FDS4559-F085 13” 12mm 2500 units
ee
2008 Semiconductor Components Industries, Semiconductor Components Industries, Publication Order Number:
LLC.December-2017, Rev 1 FDS4559-F085/D
®
**----- End of picture text -----**
2008 Semiconductor Components Industries, Semiconductor Components Industries, LLC.December-2017, Rev 1
||**Electrical Characteristics**
TA= 25°C unless otherwise noted
**Symbol**
**Parameter**
**Test Conditions**
**Drain-Source Avalanche Ratings (Note 1)**|**Electrical Characteristics**
TA= 25°C unless otherwise noted
**Symbol**
**Parameter**
**Test Conditions**
**Drain-Source Avalanche Ratings (Note 1)**|**Electrical Characteristics**
TA= 25°C unless otherwise noted
**Symbol**
**Parameter**
**Test Conditions**
**Drain-Source Avalanche Ratings (Note 1)**|**Electrical Characteristics**
TA= 25°C unless otherwise noted
**Symbol**
**Parameter**
**Test Conditions**
**Drain-Source Avalanche Ratings (Note 1)**|||||**Units**
mJ
A
V
mV/°C
µA
nA
V
mV/°C
mΩ
A
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC|**FDS4559_F085 60V Complementary PowerTrench MOSFET**
**®**|
|---|---|---|---|---|---|---|---|---|---|---|
||||**Parameter**|**Test Conditions**|**Type**|**Min**|**Typ**|**Max**|||
||||||||||||
||WDSS||Single Pulse Drain-Source
Avalanche Energy|VDD= 30 V,
ID= 4.5 A|Q1|||90|||
||IAR||Maximum Drain-Source
Avalanche Current||Q1|||4.5|||
||**OffCharacteristics**
BVDSS
Drain-Source Breakdown
Voltage
∆BVDSS
∆TJ
Breakdown Voltage
Temperature Coefficient
IDSS
Zero Gate Voltage Drain
Current
IGSS
Gate-Body Leakage
**On Characteristics**
**(Note 2)**
VGS(th)
Gate Threshold Voltage||||||||||
||||Drain-Source Breakdown
Voltage|VGS= 0 V, ID= 250 µA
VGS= 0 V,ID= –250µA|Q1
Q2|60
–60|||||
||||Breakdown Voltage
Temperature Coefficient|ID= 250 µA, Referenced to 25°C
ID= –250 µA,Referenced to25°C|Q1
Q2||58
–49||||
||||Zero Gate Voltage Drain
Current|VDS= 48 V, VGS= 0 V
VDS= –48 V,VGS= 0 V|Q1
Q2|||1
–1|||
||||Gate-Body Leakage|VGS=+
20 V, VDS= 0 V
VGS=+
20 V,VDS= 0 V|Q1
Q2|||+
100
+
100|||
||||||||||||
|||Gate Threshold Voltage||VDS= VGS, ID= 250 µA
VDS= VGS,ID= –250µA|Q1
Q2|1
–1|2.2
–1.6|3
–3|||
||∆VGS(th)
∆TJ|Gate Threshold Voltage
Temperature Coefficient||ID= 250 µA, Referenced to 25°C
ID= –250µA,Referenced to 25°C|Q1
Q2||–5.5
4||||
||RDS(on)|Static Drain-Source
On-Resistance||VGS= 10 V, ID= 4.5 A
VGS= 10 V, ID= 4.5 A, TJ= 125°C
VGS= 4.5 V,ID= 4 A|Q1||42
72
55|55
94
75|||
|||||VGS= –10 V, ID= –3.5 A
VGS= –10 V, ID= –3.5 A, TJ= 125°C
VGS= –4.5 V,ID= –3.1 A|Q2||82
130
105|105
190
135|||
||ID(on)|On-State Drain Current||VGS= 10 V, VDS= 5 V
VGS= –10 V,VDS= –5 V|Q1
Q2|20
–20|||||
||gFS
Forward Transconductance
**Dynamic Characteristics**
Ciss
Input Capacitance|Forward Transconductance||VDS= 10 V, ID= 4.5 A
VDS= –5 V,ID= –3 5 A|Q1
Q2||14
9||||
||||||||||||
|||Input Capacitance||Q1
VDS= 25 V, VGS= 0 V,
f = 1.0 MHz
Q2
VDS= –30 V, VGS= 0 V,
f = 1.0 MHz|Q1
Q2||650
759||||
||Coss|Output Capacitance|||Q1
Q2||80
90||||
||Crss|Reverse Transfer
Capacitance|||Q1
Q2||35
39||||
||**Switching Characteristics** (Note 2)||||||||||
||td(on)|Turn-On Delay Time||Q1
VDD= 30 V, ID= 1 A,
VGS= 10V, RGEN= 6Ω
Q2
VDD= –30 V, ID= –1 A,
VGS= –10 V, RGEN= 6Ω|Q1
Q2||11
7|20
14|||
||tr|Turn-On Rise Time|||Q1
Q2||8
10|18
20|||
||td(off)|Turn-Off Delay Time|||Q1
Q2||19
19|35
34|||
||tf|Turn-Off Fall Time|||Q1
Q2||6
12|15
22|||
||Qg|Total Gate Charge||Q1
VDS= 30 V, ID= 4.5 A, VGS= 10 V
Q2
VDS= –30 V, ID= –3.5 A, VGS= –10V|Q1
Q2||12.5
15|18
21|||
||Qgs|Gate-Source Charge|||Q1
Q2||2.4
2.5||||
||Qgd|Gate-Drain Charge|||Q1
Q2||2.6
3.0||||
||||||||||||
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|**Electrical Characteristics**|**Electrical Characteristics**|**(continued)**
TA= 25°C unless otherwis|e noted|||||
|---|---|---|---|---|---|---|---|
|**Symb**|**ol**
**Parameter**|**Test Conditions**|**Type **|**Min**|**Typ**|**Max**|**Units**|
|**Drain-Source Diode Characteristics and Maximum Ratings**||||||||
|IS|Maximum Continuous Drain-Source Diode Forward Current||Q1
Q2|||1.3
–1.3|A|
|VSD|Drain-Source Diode Forward
Voltage|VGS= 0 V, IS= 1.3 A(Note 2)
VGS= 0 V,IS= –1.3 A (Note 2)|Q1
Q2||0.8
–0.8|1.2
–1.2|V|
|**Notes:**||||||||
**1.** RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
**==> picture [63 x 76] intentionally omitted <==**
a) 78°C/W when b) 125°C/W when c) 135°C/W when mounted on a mounted on a mounted on a .02 in[2] minimum pad. 0.5 in[2] pad of 2 oz pad of 2 oz copper copper
Scale 1 : 1 on letter size paper
**2.** Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
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Typical Characteristics: Q2
15 1.8
12 VGS = -10V-6.0V -5.0V -4.0V -4.5V 1.6 VGS = -3.5V
-3.5V -4.0V
9 1.4
-4.5V
-5.0V
6 1.2 -6.0V
-3.0V -7.0V
-8.0V
-10V
3 1
-2.5V
0 0.8
0 1 2 3 4 5 0 2 4 6 8 10
-VDS, DRAIN-SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2 0.4
1.8 VIDGS = -3.5A = -10V ID = -1.5A
1.6 0.3
1.4
TA = 125 [o] C
1.2 0.2
1
0.8 0.1
0.6 TA = 25 [o] C
0.4 0
-50 -25 0 25 50 75 100 125 150 175 2 4 6 8 10
TJ, JUNCTION TEMPERATURE ( [o] C) -VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with
Temperature. Gate-to-Source Voltage.
15 100
VDS = -5V TA = -55 [o] C 25 [o] C VGS = 0V
12 10
125 [o] C TA = 125 [o] C
9 1 25 [o] C
-55 [o] C
6 0.1
3 0.01
0 0.001
1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
, NORMALIZED
DS(ON)
, DRAIN CURRENT (A)-ID R
DRAIN-SOURCE ON-RESISTANCE
, NORMALIZED
RDS(ON) , ON-RESISTANCE (OHM)DS(ON) ®
DRAIN-SOURCE ON-RESISTANCE R
FDS4559_F085 60V Complementary PowerTrench MOSFET
, DRAIN CURRENT (A)-ID
, REVERSE DRAIN CURRENT (A)-IS
**----- End of picture text -----**
## **Typical Characteristics: Q2**
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Typical Characteristics: Q2
10 1200
8 ID = -3.0A VDS = 10V 20V 1000 f = 1 MHz V GS = 0 V
30V
800
6 CISS
600
4
400
2
200
CRSS COSS
0 0
0 4 8 12 16 0 10 20 30 40 50 60
Qg, GATE CHARGE (nC) -V DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100 40
SINGLE PULSE
100µs RθJA = 135°C/W
10 RDS(ON) LIMIT 30 TA = 25°C
10ms
100ms
1 20
1s
V GS = -10V DC10s
0.1 SINGLE PULSE 10
RθJA = 135 [o] C/W
TA = 25 [o] C
0.01 0
0.1 1 10 100 0.01 0.1 1 10 100 1000
-VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
CAPACITANCE (pF)
, GATE-SOURCE VOLTAGE (V)
GS
-V
, DRAIN CURRENT (A)ID
P(pk), PEAK TRANSIENT POWER (W) ®
FDS4559_F085 60V Complementary PowerTrench MOSFET
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5
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Typical Characteristics: Q1
20 1.8
VGS = 10V
6.0V 4.5V
16 1.6
5.0V
4.0V VGS = 4.0V
12 1.4 4.5V
5.0V
8 1.2 6.0V
8.0V
3.5V 10V
4 1
0 0.8
0 1 2 3 4 0 4 8 12 16 20
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
2.2 0.14
2 VIDGS = 4.5A = 10V 0.12 ID = 2.3A
1.8
0.1
1.6
1.4 0.08 TA = 125 [o] C
1.2 0.06
1
0.8 0.04 TA = 25 [o] C
0.6 0.02
0.4
0
-50 -25 0 25 50 75 100 125 150 175
2 4 6 8 10
TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation with Figure 14. On-Resistance Variation with
Temperature. Gate-to-Source Voltage.
20 100
VDS = 5V TA = -55 [o] C 25 [o] C VGS = 0V
10
16 125 [o] C
1 TA = 125 [o] C
12 25 [o] C
0.1
-55 [o] C
8
0.01
4 0.001
0.0001
0
0 0.2 0.4 0.6 0.8 1 1.2
1 2 3 4 5 6
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
, NORMALIZED
DS(ON)
R
, DRAIN-SOURCE CURRENT (A)ID DRAIN-SOURCE ON-RESISTANCE
, NORMALIZED
RDS(ON) , ON-RESISTANCE (OHM)DS(ON) ®
R
DRAIN-SOURCE ON-RESISTANCE
FDS4559_F085 60V Complementary PowerTrench MOSFET
, DRAIN CURRENT (A)ID
, REVERSE DRAIN CURRENT (A)IS
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## **Typical Characteristics: Q1**
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**----- Start of picture text -----**
Typical Characteristics: Q1
10
ID = 4.5A VDS = 10V 900
f = 1MHz
8 30V 20V 800 VGS = 0 V
700
CISS
6 600
500
4 400
300
2 200
100 COSS
0 0 CRSS
0 2 4 6 8 10 12 14 0 10 20 30 40 50 60
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics.
100 40
SINGLE PULSE
RDS(ON) LIMIT RθJA = 135 [o] C/W
10 100µs 30 TA = 25 [o] C
1m
10ms
1 100ms 20
1s
VGS= 10V DC
SINGLE PULSE
0.1 RθJA= 135 [o] C/W 10
TA= 25 [o] C
0.01 0
0.1 1 10 100 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC)
Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2 R θJA (t) = r(t) + R θJA
0.1 0.1 RθJA = 135°C/W
0.05
P(pk)
0.02
0.01 t 1
0.01 t2
SINGLE PULSE TJ - TA = P * RθJA(t)
Duty Cycle, D = t 1 / t 2
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
CAPACITANCE (pF)
, GATE-SOURCE VOLTAGE (V)
GS
V
POWER (W)
, DRAIN CURRENT (A)ID
®
FDS4559_F085 60V Complementary PowerTrench MOSFET
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
**----- End of picture text -----**
## **Typical Characteristics: Q1**
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **PUBLICATION ORDERING INFORMATION**
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---
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