# Power MOSFET, P Channel, 20 V, 13.5 A, 8500 µohm, SOIC, Surface Mount
**URL**: https://novapart.co/products/FDS4465./power-mosfet-p-channel-20-v-135-a-8500-ohm-soic
**SKU**: FDS4465.
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5050
**Stock**: 10+
**Lead Time**: 313 days (indicative)
## Description
Transistor Polarity:P Channel; Continuous Drain Current Id:-13.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Pow
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 13.5A |
| Drain Source On State Resistance | 8500µohm |
| Gate Source Threshold Voltage Max | 600mV |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:1471051RL/)
**DATA SHEET** ~~ee~~ **www.onsemi.com**
## MOSFET – P-Channel, POWERTRENCH ~~—~~ ®
## 1.8 V Specified
## FDS4465, FDS4465-G
## **Description**
This P−Channel 1.8 V specified MOSFET is a rugged gate version of **onsemi** ’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8 V–8 V).
## **Features**
- –13.5 A, –20 V
- ♦ RDS(on) = 8.5 mΩ @ VGS = –4.5 V
- ♦ RDS(on) = 10.5 mΩ @ VGS = –2.5 V
- ♦ RDS(on) = 14 mΩ @ VGS = –1.8 V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(on)
- High Current and Power Handling Capability
## **Applications**
- Power Management
- Load Switch
**==> picture [189 x 310] intentionally omitted <==**
**----- Start of picture text -----**
VDSS RDS(on) MAX ID MAX
−20 V 8.5 m @ −4.5 V −13.5 A
Scr ao
10.5 m @ −2.5 V
14 m @ −1.8 V
P−Channel
5 4
6 3
7 2
8 1
D [D]
D [D]
S [G]
S
Pin 1 om S
SOIC8
CASE 751EB
**----- End of picture text -----**
- Battery Protection
## **MARKING DIAGRAM**
## **Specifications**
**ABSOLUTE MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted)
**Symbol Parameter Value Unit** VDSS Drain−to−Source Voltage −20 V VGSS Gate−to−Source Voltage ± 8 V ID Drain Current Continuous (Note 1a) −13.5 A Pulsed −50 PD Power Dissipation (Note 1a) 2.5 W (Note 1b) 1.5 (Note 1c) 1.2 TJ, TSTG Operating and Storage Junction −55 to +175 ° C Temperature Range ~~es~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
**==> picture [125 x 115] intentionally omitted <==**
**----- Start of picture text -----**
FDS4465
ALYW
FDS4465 = Specific Device Code
A = Assembly Site
L = Wafer Lot Number
YW = Assembly Start Week
**----- End of picture text -----**
## **ORDERING INFORMATION**
See detailed ordering and shipping information on page 5 of this data sheet.
## **THERMAL CHARACTERISTICS**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|R JA
~~ee~~|Thermal Resistance,
Junction−to−Ambient (Note 1a)|50
~~**ee**~~|C/W
~~ee~~|
|R JA
~~ee~~
~~ee~~|Thermal Resistance,
Junction−to−Ambient (Note 1c)
~~ee~~
~~ee~~|125
~~ee~~
~~**ee**~~|C/W
~~ee~~
~~ee~~|
|R JC
~~ee~~|Thermal Resistance,
Junction−to−Ambient (Note 1)
~~ee~~|25
~~**ee**~~|C/W
~~ee~~|
Publication Order Number:
**1**
© Semiconductor Components Industries, LLC, 2017 **February, 2022 − Rev.5**
**FDS4465/D**
**FDS4465, FDS4465−G**
**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted)
|**ELECTRIC**|**AL CHARACTERISTICS**(TA= 25°C|unless otherwise noted)|unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|BVDSS|Drain−Source Breakdown Voltage|VGS= 0 V, ID= 250�A||−20|||V|
|�BVDSS
�TJ|Breakdown Voltage Temperature
Coefficient|ID= −250�A, Referenced to 25°C
TJ= 25°C
TJ= 150°C|||−12||mV/°C|
|IDSS|Zero Gate Voltage Drain Current|VDS= −16 V, VGS= 0 V||||−1|�A|
|IGSSF|Gate–Body Leakage, Forward|VGS= 8 V, VDS= 0 V||||100|nA|
|IGSSR|Gate–Body Leakage, Reverse|VGS= −8 V, VDS= 0 V||||−100|nA|
|**ON CHARACTERISTICS**(Note 2)||||||||
|VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 250�A||−0.4|−0.6|−1.5|V|
|�VGS(th)
�TJ|Gate Threshold Voltage Temperature
Coefficient|ID= −250�A, Referenced to 25°C|||3||mV/°C|
|RDS(on)|Static Drain−Source On−Resistance|VGS= −4.5 V, ID= −13.5 A|||6.7|8.5|m�|
|||VGS= −2.5 V, ID= −12 A|||8.0|10.5||
|||VGS= −1.8 V, ID= −10.5 A|||9.8|14||
|||VGS= −4.5 V, ID= −13.5 A|TJ= 125°C||9.0|13||
|ID(on)|On–State Drain Current|VGS= −4.5 V, VDS= −5 V||−50|||A|
|gFS|Forward Transconductance|VDS= −5 V, ID= −13.5 A|||70||S|
|**DYNAMIC CHARACTERISTICS**||||||||
|Ciss|Input Capacitance|VDS= −10 V, VGS= 0 V, f = 1.0 MHz|||8237||pF|
|Coss|Output Capacitance||||1497||pF|
|Crss|Reverse Transfer Capacitance||||750||pF|
|Rg|Gate Resistance|||0.1|3.0|6.0|�|
|**SWITCHING CHARACTERISTICS **(Note 2)||||||||
|td(on)|Turn–On Delay Time|VDD= −10 V, ID= −1 A, VGS= −4.5 V,
RGEN= 6�|||20|36|ns|
|tr|Turn–On Rise Time||||24|38|ns|
|td(off)|Turn–Off Delay Time||||300|480|ns|
|tf|Turn–Off Fall Time||||140|224|ns|
|Qg|Total Gate Charge|VDS= −10 V, ID= −1 A, VGS= −4.5 V|||86|120|nC|
|Qgs|Gate–Source Charge||||20||nC|
|Qgd|Gate–Drain Charge||||11||nC|
|**DRAIN–SOURCE DIODE CHARACTERISTICS AND**||**MAXIMUM RATINGS**||||||
|IS|Maximum Continuous Drain–Source Diode Forward Current|||||−2.1|A|
|VSD|Drain–Source Diode Forward Voltage|VGS= 0 V, IS= −2.1 A (Note 2)|||−0.6|−1.2|V|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R � JA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R � JC is guaranteed by design while R � CA is determined by the user’s board design.
a) 50 ° C/W when mounted on a 1 in[2] pad of 2 oz copper
b) 105 ° C/W when mounted c) 125 ° C/W when mounted on a .04 in[2] pad of 2 oz on a minimum pad copper
Scale 1:1 on letter size paper
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**2**
**FDS4465, FDS4465−G**
2. Pulse Test: Pulse Width < 300 � s, Duty Cycle < 2.0%
## **TYPICAL CHARACTERISTICS**
**==> picture [198 x 129] intentionally omitted <==**
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50
VGS = −4.5 V
−2 . 0 V
40
−2 . 5 V
−1 . 8 V −1 . 5 V
30
20
10
0
0 0.5 1 1.5
−VDS, DRAIN TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)−ID,
**----- End of picture text -----**
**Figure 1. On−Region Characteristics**
**==> picture [196 x 129] intentionally omitted <==**
**----- Start of picture text -----**
3
2.6
2.2
VGS = −1.5 V
1.8
− 1.8 V
1.4 −2.0V
−2 . 5 V
1 −4 . 5 V
0.6
0 10 20 30 40 50
−ID, DRAIN CURRENT (A)
, NORMALIZED
DS(ON)
R
DRAIN−SOURCE ON−RESISTANCE
**----- End of picture text -----**
**Figure 2. On−Resistance Variation with Drain Current and Gate Voltage**
**==> picture [197 x 129] intentionally omitted <==**
**----- Start of picture text -----**
1.6
ID = −13.5 A
VGS = −10 V
1.4
1.2
1
0.8
0.6
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ( [o] C)
, NORMALIZED
DS(ON)
R
DRAIN−SOURCE ON−RESISTANCE
**----- End of picture text -----**
**Figure 3. On−Resistance Variation with Temperature**
**==> picture [199 x 129] intentionally omitted <==**
**----- Start of picture text -----**
0.025
ID = −6.3 A
0.02
0.015
TA = 125 [o] C
0.01
TA = 25 [o] C
0.005
0
0 1 2 3 4 5
−VGS, GATE TO SOURCE VOLTAGE (V)
ON−RESISTANCE (OHM)DS(ON),
R
**----- End of picture text -----**
**Figure 4. On−Resistance Variation with Gate−to−Source Voltage**
**==> picture [194 x 129] intentionally omitted <==**
**----- Start of picture text -----**
50
VDS = −5.0 V
40
30
20
TA = 125 [o] C
25 [o] C
10
−55 [o] C
0
0 0.5 1 1.5 2
−VGS, GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)−ID,
**----- End of picture text -----**
**Figure 5. Transfer Characteristics**
**==> picture [197 x 129] intentionally omitted <==**
**----- Start of picture text -----**
100
VGS = 0V
10
TA = 125 [o] C
1
25 [o] C
0.1
−55 [o] C
0.01
0.001
0.0001
0 0.2 0.4 0.6 0.8 1 1.5
−VSD, BODY DIODE FORWARD VOLTAGE (V)
REVERSE DRAIN CURRENT (A) −IS,
**----- End of picture text -----**
**Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature**
**www.onsemi.com**
**3**
**FDS4465, FDS4465−G**
## **TYPICAL CHARACTERISTICS**
**==> picture [197 x 304] intentionally omitted <==**
**----- Start of picture text -----**
5
ID = −13.5 A VDS = −5 V
−10 V
4
−15 V
3
2
1
0
0 20 40 60 80 100
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
100
100 s
1 ms
R DS(ON) LIMIT 10 ms
10
100 ms
1 s
1 10 s
DC
V GS = −4.5 V
SINGLE PULSE
0.1
R JA [ = 125][o][C/W]
TA = 2 5 [o] C
0.01
0.1 1 10 100
−VDS, DRAIN−SOURCE VOLTAGE (V)
GATE−SOURCE VOLTAGE (V)GS,
−V
DRAIN CURRENT (A)−ID,
**----- End of picture text -----**
**Figure 9. Maximum Safe Operating Area**
**==> picture [197 x 131] intentionally omitted <==**
**----- Start of picture text -----**
10000
f = 1 MHz
CISS VGS = 0 V
8000
6000
4000
2000 C OSS
CRSS
0
0 5 10 15 20
−VDS, DRAIN TO SOURCE VOLTAGE (V)
ACITANCE (pF)
CAP
**----- End of picture text -----**
**Figure 8. Capacitance Characteristics**
**==> picture [199 x 129] intentionally omitted <==**
**----- Start of picture text -----**
50
SINGLE PULSE
R JA [ =] [ 125][°][C/W]
40 T A = 25°C
30
20
10
0
0.001 0.01 0.1 1 10 100
t1, TIME (sec)
(pk), PEAK TRANSIENT POWER (W)
P
**----- End of picture text -----**
**Figure 10. Single Pulse Maximum Power Dissipation**
**==> picture [402 x 127] intentionally omitted <==**
**----- Start of picture text -----**
1
D = 0.5
0.2 R � JA (t) = r(t) + R � JA
0.1 0.1 R � JA = 125 [o] C/W
0.05 P(pk)
0.02
0.01 t 1
0.01 t2
TJ −TA = P * R � JA(t)
SINGLE PULSE Duty Cycle, D = t 1 / t 2
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
**----- End of picture text -----**
**Figure 11. Transient Thermal Response Curve**
**Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on circuit board design.**
**www.onsemi.com**
**4**
**FDS4465, FDS4465−G**
## **PACKAGE MARKING AND ORDERING INFORMATION**
|**Device Marking**|**Device**|**Reel Size**|**Tape Width**|**Shipping**†|
|---|---|---|---|---|
|FDS4465|FDS4465|13″|12 mm|2500 / Tape & Reel|
|FDS4465|FDS4465−G|13″|12 mm|2500 / Tape & Reel|
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries.
**www.onsemi.com**
**5**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**==> picture [270 x 39] intentionally omitted <==**
**----- Start of picture text -----**
SOIC8
CASE 751EB
ISSUE A
DATE 24 AUG 2017
**----- End of picture text -----**
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
**DOCUMENT NUMBER: 98AON13735G** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOIC8 PAGE 1 OF 1**
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2019
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **PUBLICATION ORDERING INFORMATION**
**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative
◊
**==> picture [232 x 43] intentionally omitted <==**
## Links
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- [Supplier page](https://es.farnell.com/on-semiconductor/fds4465/mosfet-p-smd-8-soic/dp/1471051RL)
---
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