# Power MOSFET, P Channel, 30 V, 9 A, 0.017 ohm, SOIC, Surface Mount ![Product image](https://novapart.co/image/farnell:1653650/) **URL**: https://novapart.co/products/FDS4435A/power-mosfet-p-channel-30-v-9-a-0017-ohm-soic **SKU**: FDS4435A **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.3570 **Stock**: 10+ ## Description Transistor Polarity:P Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.7V; Power Dissipa ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 8Pins | | Channel Type | P Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 2.5W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | SOIC | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 9A | | Drain Source On State Resistance | 0.017ohm | | Gate Source Threshold Voltage Max | 1.7V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1653650/) **==> picture [60 x 8] intentionally omitted <==** **----- Start of picture text -----**
October 2001
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## **P-Channel Logic Level PowerTrench**[] ||**D**|||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||**D**
**D**||||5||||||||4|||| |**D**|||||6||||||||3|||| |||||||||||||||||| ||**S**
**S**
**S**
**SO-8**
**G**||||8
7||||||||1
2|||| |**Absolute Maximum Ratings**TA= 25°C unless otherwise noted||= 25°C unless otherwise noted||||||||||||||| |**Symbol**|**Parameter**||||||||**Ratings**|||||||**Units**| |VDSS|Drain-Source Voltage|||||||||-30||||||V| |VGSS|Gate-Source Voltage|||||||||±20||||||V| |ID|Drain Current
- Continuous||(Note 1a)|||||||-9||||||A| ||- Pulsed|||||||||-50||||||| |PD|Power Dissipation for Single Operation||(Note 1a)|||||||2.5||||||W| ||||(Note 1b)|||||||1.2||||||| ||||(Note 1c)|||||||1||||||| |TJ, Tstg|Operating and Storage Junction Temperature Range|||||||-55 to +150||||||||°C| |**Thermal Characteristics**||||||||||||||||| |RθJA|Thermal Resistance, Junction-to-Ambient||(Note 1a)|||||||50||||||°C/W| |RθJC|Thermal Resistance, Junction-to-Case||(Note 1)|||||||25||||||°C/W| |**Package Marking and Ordering Information**||||||||||||||||| |**Device Markin**|**Device Marking**
**Device**||**Reel Size**||||**Tape Width**||||||||**Quantity**|| |FDS4435A
FDS4435A|||13’’|||||12mm|||||||2500 units|| © 2001 D |**Electrical Characteristics**TA= 25°C unless otherwise noted|**Electrical Characteristics**TA= 25°C unless otherwise noted|**Electrical Characteristics**TA= 25°C unless otherwise noted||||||| |---|---|---|---|---|---|---|---|---| |**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Off Characteristics**
~~a~~
~~eeee ~~||||||**Typ**
~~ee~~|**Max**|**Units**| |BVDSS|Drain-Source Breakdown Voltage|VGS= 0 V, ID= -250µA|||-30|||V| |∆BVDSS|Breakdown Voltage Temperature|ID= -250µA,Referenced to 25°C||||-26||mV/°C| |∆TJ|Coefficient|||||||| |IDSS|Zero Gate Voltage Drain Current|VDS= -24 V, VGS= 0|||||-1|µA| ||||TJ= 125°C||||-10|| |IGSSF|Gate-Body Leakage Current, Forward|VGS= 20 V, VDS= 0 V|||||100|nA| |IGSSR|Gate-Body Leakage Current, Reverse|VGS= -20 V, VDS= 0 V|||||-100|nA| |**On Characteristics** (Note 2)||||||||| |VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= -250µA|||-1|-1.7|-2|V| |∆VGS(th)|Gate Threshold Voltage|ID= -250µA,Referenced to 25°C||||4.2||mV/°C| |∆TJ|Temperature Coefficient|||||||| |RDS(on)|Static Drain-Source On-Resistance|VGS= -10 V, ID= -9 A||||0.015|0.017|Ω| ||||TJ= 125|= 125°C||0.021|0.030|| |||VGS= -4.5 V, ID= -7 A||||0.023|0.025|| |ID(on)|On-State Drain Current|VGS= -10 V, VDS= -5 V|||-40|||A| |gFS|Forward Transconductance|VDS= -10 V, ID= -9 A|= -9 A|||25||S| |**Dynamic Characteristics**|**Dynamic Characteristics**|||||||| |Ciss|Input Capacitance|VDS= -15 V, VGS= 0 V||||2010||pF| |Coss|Output Capacitance|f = 1.0 MHz||||590||pF| |Crss|Reverse Transfer Capacitance|||||260||pF| |**Switching Characteristics** (Note 2)||||||||| |td(on)|Turn-On Delay Time|VDD= -15 V, ID= -1 A||||12|22|ns| |tr|Turn-On Rise Time|VGS= -10 V, RGEN= 6Ω||||15|27|ns| |td(off)|Turn-Off Delay Time|||||100|140|ns| |tf|Turn-Off Fall Time|||||55|80|ns| |Qg|Total Gate Charge|VDS= -15 V, ID= -9 A|= -9 A|||21|30|nC| |Qgs|Gate-Source Charge|VGS= -5 V,||||6||nC| |Qgd|Gate-Drain Charge|||||8||nC| |**Drain-Source Diode Characteristics and Maximum Ratings**||||||||| |IS|Maximum Continuous Drain-Source Diode Forward Current||||||-2.1|A| |VSD|Drain-Source Diode Forward Voltage|VGS= 0 V, IS= -2.1 A|= -2.1 A(Note 2)|(Note 2)||0.75|-1.2|V| |trr|Source-Drain Reverse Recovery Time|IF= -10 A, dlF/dt = 100 A/µS||||36|80|ns| D **==> picture [436 x 489] intentionally omitted <==** **----- Start of picture text -----**
V = -10VGS a 2.4
-6.0V 2.2
-4.5V
-4.0V 2 VGS = -3.5V
. tt te eee eee e e
30 | -3.5V so 1.8 -4.0V ~a an
1.6 -4.5V
-5.0V
Wr -3.0V 1.4 ae
-6.0V
1.2 -7.0V
-8.0V
| Ze -2.5V a 0.81 rd -10V
0 0.5 1 1.5 2 2.5 3 3.5 4
-V , DRAIN-SOURCE VOLTAGE (V)DS 0 10 20 30 40 50
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
1.6 0.07
VGS = -10V ID = -4.5A
ID = -9A 0.06
1.4
0.05
1.2 0.04
1 0.03 T J = 125 [O] C
0.02
0.8 0.01 TJ = 25 [O] C
0.6 -_ 0 FESee
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (OC) -VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation
with Temperature with Gate-to-Source Voltage
100
40
VDS = -5V TJ = -55 [O] C 25 [O] C 10 eo VGS = 0V ae
30 125 [O] C 1 T A = 125 [o] C
—¢/f 25 [o] C
20 } 0.1 osae
-55 [o] C
0.01
10
0.001
0 LA Z 0.0001 aEEa a
0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)
, NORMALIZED
DS(ON)
R
D
- I , DRAIN-SOURCE CURRENT (A) DRAIN-SOURCE ON-RESISTANCE
, ON RESISTANCE (OHM)
NORMALIZED ON-RESISTANCE RDS(ON)
, DRAIN CURRENT (A)-ID
, REVERSE DRAIN CURRENT (A)-IS
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D **==> picture [422 x 486] intentionally omitted <==** **----- Start of picture text -----**
10 2500
ID = -8.8A VDS = -5V -10V f = 1 MHzVGS = 0 V
8 -15V 2000
6 1500 CISS
4 1000
2 500 C OSS
CRSS
0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics Figure 8. Capacitance Characteristics
100 =] SS ae 50 \
RDS(ON) LIMIT 100µs SINGLE PULSE
1ms 40 R =125°C/WθJA
10 SS 10ms IMT T = 25°CA 1
Seo. 100ms == 30 Ua I
1s
1 Sah 10s ype, cei
cc DC 20 SET
V GS = -10V
SINGLE PULSE
0.1
RθJA = 125 [o] C/W SSS 10 NUTT
0.01 TA = 25 [o] C [el ll 0 1
0.1 1 10 100 0.001 0.01 0.1 1 10 100 300
-VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum
Power Dissipation
0.51 SS D = 0.5 SS SS SSS Sa S
0.2 a 0.2 sin ——in R (t) = r(t) * R R = 125°C / Wθ [J A] θ [J A] θ [J A]
0.1 0.1
0.05 e 0.05 e P(pk )
0.02 S——sa e 0.02 e 0.01 eal r ey t 1 t 2
0.01
0.005 _————Seee e S i n g l e P u l s e S———eeor — ee D u t y C y c l e, D = t /tT - T = P * R ( t)J ze A θ [JA] 1 2
0.002
0.0010.0001 BET 0.001 CCIE 0.01 ec 0.1 r 1 10 100 300
t , TI ME (s e c)1
CAPACITANCE (pF)
, GATE-SOURCE VOLTAGE (V)
GS
-V
POWER (W)
, DRAIN CURRENT (A)-ID
r(t), NORM ALIZED EFFECTIVE
TR ANSI ENT TH ER MAL RESISTANC E
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D ## **TRADEMARKS** The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. **==> picture [433 x 130] intentionally omitted <==** **----- Start of picture text -----**
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STAR*POWER is used under license ## **DISCLAIMER** FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. ## **LIFE SUPPORT POLICY** FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. ## **PRODUCT STATUS DEFINITIONS** ## **Definition of Terms** **==> picture [433 x 208] intentionally omitted <==** **----- Start of picture text -----**
Datasheet Identification Product Status Definition
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
**----- End of picture text -----**
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