# Power MOSFET, P Channel, 40 V, 10.8 A, 0.011 ohm, SOIC, Surface Mount ![Product image](https://novapart.co/image/farnell:2322607/) **URL**: https://novapart.co/products/FDS4141/power-mosfet-p-channel-40-v-108-a-0011-ohm-soic **SKU**: FDS4141 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.5030 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 8Pins | | Channel Type | P Channel | | Power Dissipation | 5W | | Transistor Mounting | Surface Mount | | Transistor Polarity | P Channel | | Power Dissipation Pd | 5W | | Rds(On) Test Voltage | 10V | | On Resistance Rds(On) | 0.011ohm | | Transistor Case Style | SOIC | | Drain Source Voltage Vds | 40V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 10.8A | | Drain Source On State Resistance | 0.011ohm | | Gate Source Threshold Voltage Max | 1.6V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2322607/) ## **Is Now Part of** **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **www.onsemi.com** ## **FDS4141** **P-Channel PowerTrench[®] MOSFET -40V, -10.8A, 13.0m** Ω ## **General Description** ## **Features** This P-Channel MOSFET has been produced using On Semiconductor’s proprietary PowerTrenchDS(on) and optimized BVDSS capability to offer and optimized BVDSS capability to offer[[®]] technology to deliver low rDS(on) and optimized BVDSS capability to offer Semiconductor’s proprietary PowerTrenchDS(on) and optimized BVDSS capability to offer and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. **==> picture [441 x 257] intentionally omitted <==** **----- Start of picture text -----**
Max rDS(on) = 13.0mΩ at VGS = -10V, ID = -10.5A This P-Channel MOSFET has been produced using On
Max rDS(on) = 19.0mΩ at VGS = -4.5V, ID = -8.4A deliver low rDS(on) and optimized BVDSS capability to offer Semiconductor’s proprietary PowerTrenchDS(on) and optimized BVDSS capability to offer and optimized BVDSS capability to offer [[®]]
High performance trench technology for extremely low rDS(on) superior performance benefit in the applications and optimized
switching performance capability reducing power dissipation
RoHS Compliant
losses in converter/inverter applications.
Applications
Control switch in synchronous & non-synchronous buck
Load switch
Inverter
D
D
D D 5 4 G
D
D 6 3 S
G D 7 2 S
SO-8
S
¢ S D 8 1 S
Pin 1 S
**----- End of picture text -----**
**MOSFET Maximum Ratings** TA = 25°C unless otherwise noted **==> picture [471 x 203] intentionally omitted <==** **----- Start of picture text -----**
Symbol Parameter Ratings Units
VDS Drain to Source Voltage -40 V
VGS Gate to Source Voltage ±20 V
Drain Current -Continuous -10.8
ID -Pulsed -36 A
EAS Single Pulse Avalanche Energy (Note 3) 294 mJ
PD Power DissiPower Dissippation ation T TAA = 25°C = 25°C ((Note 1aNote 1b)) 2.55 W
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction to Case (Note 1) 25
°C/W
ee RθJA Thermal Resistance, Junction to Ambient (Note 1a) ee 50 ae
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDS4141 FDS4141 SO-8 13’’ 12mm 2500units
ee
**----- End of picture text -----**
Semiconductor Components Industries, LLC, 2017 April, 2017, Rev. 1.0 Publication Order Number: FDS4141 **1** **Electrical Characteristics** TJ = 25°C unless otherwise noted |**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= -250µA, VGS= 0V
-40
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID= -250µA, referenced to 25°C
-33
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= -32V,
-1
µA
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS = 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= -250µA
-1.0
-1.6
-3.0
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= -250µA, referenced to 25°C
5.3
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= -10V, ID= -10.5A
11.0
13.0
mΩ
VGS= -4.5V, ID= -8.4A
15.2
19.0
VGS= -10V, ID= -10.5A, TJ= 125°C
16.8
19.9
gFS
Forward Transconductance
VDD= -5V, ID= -10.5A
37
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= -20V, VGS= 0V,
f = 1MHz
2005
2670
pF
Coss
Output Capacitance
355
475
pF
Crss
Reverse Transfer Capacitance
190
285
pF
Rg
Gate Resistance
f = 1MHz
5
Ω
~~a~~
~~=~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= -250µA, VGS= 0V
-40
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID= -250µA, referenced to 25°C
-33
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= -32V,
-1
µA
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS = 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= -250µA
-1.0
-1.6
-3.0
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= -250µA, referenced to 25°C
5.3
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= -10V, ID= -10.5A
11.0
13.0
mΩ
VGS= -4.5V, ID= -8.4A
15.2
19.0
VGS= -10V, ID= -10.5A, TJ= 125°C
16.8
19.9
gFS
Forward Transconductance
VDD= -5V, ID= -10.5A
37
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= -20V, VGS= 0V,
f = 1MHz
2005
2670
pF
Coss
Output Capacitance
355
475
pF
Crss
Reverse Transfer Capacitance
190
285
pF
Rg
Gate Resistance
f = 1MHz
5
Ω
~~a~~
~~=~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= -250µA, VGS= 0V
-40
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID= -250µA, referenced to 25°C
-33
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= -32V,
-1
µA
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS = 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= -250µA
-1.0
-1.6
-3.0
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= -250µA, referenced to 25°C
5.3
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= -10V, ID= -10.5A
11.0
13.0
mΩ
VGS= -4.5V, ID= -8.4A
15.2
19.0
VGS= -10V, ID= -10.5A, TJ= 125°C
16.8
19.9
gFS
Forward Transconductance
VDD= -5V, ID= -10.5A
37
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= -20V, VGS= 0V,
f = 1MHz
2005
2670
pF
Coss
Output Capacitance
355
475
pF
Crss
Reverse Transfer Capacitance
190
285
pF
Rg
Gate Resistance
f = 1MHz
5
Ω
~~a~~
~~=~~| |---|---|---| |**Switching Characteristics**||| |td(on)
Turn-On DelayTime
10|20
ns|| |VDD= -20V, ID= -10.5A,
tr
Rise Time
5|10
ns|| |VGS= -10V, RGEN= 6Ω
td(off)
Turn-Off DelayTime
42|68
ns|| |tf
Fall Time
12|22
ns|| |Qg
Total Gate Charge
VGS = 0V to -10V
VDD= -20V,
ID= -10.5A
35
49
nC
Qg
Total Gate Charge
VGS = 0V to -5V
19
27
nC
Qgs
Gate to Source Charge
6
nC
Qgd
Gate to Drain “Miller” Charge
7
nC
~~EEE~~||| |**Drain-Source Diode Characteristics**||| |VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = -10.5A(Note 2)
-0.8
-1.3
V
VGS = 0V, IS = -2.1A(Note 2)
-0.7
-1.2
trr
Reverse RecoveryTime
IF= -10.5A, di/dt = 100A/µs
26
42
ns
Qrr
Reverse RecoveryCharge
14
26
nC
~~a~~||| |NOTES:||| |1. RθJAis determined with the device mounted on a 1in2pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJCis guaranteed by design while RθCAis determined by||| |the user's board design.||| a) 50°C/W when mounted on a b) 125°C/W when mounted on a 1in[2 ] pad of 2 oz copper. minimum pad. 2. Pulse Test: Pulse Width < 30 0 µs, Duty cycle < 2.0%. 3. UIL condition: Starting TJ = 25°C, L = 3mH, IAS = -14A, VDD = -40V, VGS = -10V. www.onsemi.com **2** ## **Typical Characteristics** TJ = 25°C unless otherwise noted **==> picture [477 x 576] intentionally omitted <==** **----- Start of picture text -----**
36 4.0
VGS = -3.5V PULSE DURATION = 80 µ s
3.5 DUTY CYCLE = 0.5%MAX
27 VGS = -4V VGS = -3V
3.0
VGS = -4.5V
18 VGS = -10V 2.5 VGS = -3.5V
2.0
VGS = -3V VGS = -4V
1.5
9
PULSE DURATION = 80 µ s 1.0 VGS = -4.5V
DUTY CYCLE = 0.5%MAX VGS = -10V
0 0.5
0 1 2 3 0 9 18 27 36
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8 50
1.6 V IDGS = -10.5A = -10V ID = -10.5A PULSE DURATION = 80DUTY CYCLE = 0.5%MAX µ s
40
1.4
30
1.2
TJ = 125 [o] C
20
1.0
10
0.8
TJ = 25 [o] C
0.6 0
-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE ( [o] C) -VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to
vs Junction Temperature Source Voltage
36 100
PULSE DURATION = 80 µ s VGS = 0V
DUTY CYCLE = 0.5%MAX
10
27
VDS = -5V
TJ = 150 [o] C 1 TJ = 150 [o] C
18 TJ = 25 [o] C
0.1
TJ = 25 [o] C
9
0.01 TJ = -55 [o] C
TJ = -55 [o] C
0 0.001
0 1 2 3 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
NORMALIZED
DRAIN CURRENT (A)
,
D
-I
DRAIN TO SOURCE ON-RESISTANCE
)
Ω
m
(
, DRAIN TO
NORMALIZED
rDS(on)
SOURCE ON-RESISTANCE
DRAIN TO SOURCE ON-RESISTANCE
, DRAIN CURRENT (A)
D
-I , REVERSE DRAIN CURRENT (A)
S
-I
**----- End of picture text -----**
www.onsemi.com **3** ## **Typical Characteristics** TJ = 25°C unless otherwise noted **==> picture [469 x 575] intentionally omitted <==** **----- Start of picture text -----**
10 5000
ID = -10.5A
Ciss
8
VDD = -20V
1000
6 Coss
VDD = -15V VDD = -25V
4
2 f = 1MHz Crss
100 VGS = 0V
0 60
0 5 10 15 20 25 30 35 40 0.1 1 10 40
Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain
to Source Voltage
20 12
10 9
VGS = -10V
TJ = 25 [o] C 6 VGS = -4.5V
TJ = 125 [o] C 3
R θ JA = 50oC/W
1 0
0.01 0.1 1 10 100 500 25 50 75 100 125 150
tAV, TIME IN AVALANCHE(ms) TA, AMBIENT TEMPERATURE (oC)
Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain
Switching Capability Current vs Ambient Temperature
100 2000
1000
VGS = -10V SINGLE PULSE
10 R θ JA = 125 [o] C/W
1ms 100 TA = 25 [o] C
10ms
1
THIS AREA IS
LIMITED BY r 100ms
DS(on) 10
SINGLE PULSE 1s
0.1 TJ = MAX RATED
RTA θ JA= 25= 125 [o] C [o] C/W 10sDC 1
0.01 0.5
0.01 0.1 1 10 100 200 10-4 10-3 10-2 10-1 1 10 100 1000
-VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation
CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE(V)
GS
-V
DRAIN CURRENT (A)
,
I - D
, AVALANCHE CURRENT(A)
AS
-I
, DRAIN CURRENT (A)
D
-I
PEAK TRANSIENT POWER (W)
P)(PK,
**----- End of picture text -----**
www.onsemi.com **4** **==> picture [254 x 12] intentionally omitted <==** **----- Start of picture text -----**
Typical Characteristics TJ = 25°C unless otherwise noted
**----- End of picture text -----**
**==> picture [468 x 206] intentionally omitted <==** **----- Start of picture text -----**
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.1 0.2
0.1
0.05 PDM
0.02
0.01 0.01
t1
t2
0.001 SINGLE PULSE NOTES:
DUTY FACTOR: D = t1/t2
R θ JA = 125 [o] C/W PEAK TJ = PDM x Z θ JA x R θ JA + TA
0.0001
10-4 10-3 10-2 10-1 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
ZJA θ
IMPEDANCE,
NORMALIZED THERMAL
**----- End of picture text -----**
www.onsemi.com **5** ## **Dimensional Outline and Pad Layout** ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com **6** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **N. 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