# Power MOSFET, N Channel, 250 V, 33 A, 0.094 ohm, TO-220F, Through Hole ![Product image](https://novapart.co/image/farnell:1324807/) **URL**: https://novapart.co/products/FDPF33N25T/power-mosfet-n-channel-250-v-33-a-0094-ohm-to-220f **SKU**: FDPF33N25T **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.9400 **Stock**: 1000+ **Lead Time**: 428 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.094ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 94W | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-220F | | Drain Source Voltage Vds | 250V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 33A | | Drain Source On State Resistance | 0.094ohm | | Gate Source Threshold Voltage Max | 5V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1324807/) ## **Is Now Part of** ## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [60 x 10] intentionally omitted <==** **----- Start of picture text -----**
August 2014
**----- End of picture text -----**
## **FDPF33N25T N-Channel UniFET[TM] MOSFET 250 V, 33 A, 94 m** Ω ## **Features** - RDS(on) = 94 m Ω (Max.) @ VGS = 10 V, ID = 16.5 A - • Low Gate Charge (Typ. 36.8 nC) - Low Crss (Typ. 39 pF) - 100% Avalanche Tested ## **Applications** - PDP TV ## **Description** UniFET[TM] MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. - Lighting - Uninterruptible Power Supply - AC-DC Power Supply **==> picture [252 x 36] intentionally omitted <==** **----- Start of picture text -----**
D
G TO-220F
GDS TO-220F S LG-formed
**----- End of picture text -----**
**==> picture [51 x 95] intentionally omitted <==** **----- Start of picture text -----**
D
G
S
**----- End of picture text -----**
**Absolute Maximum Ratings** TC = 25°C unless otherwise noted. |**Absolute Maximum Ratings**|**Absolute Maximum Ratings**TC = 25°C unless otherwise noted.C = 25°C unless otherwise noted.= 25°C unless otherwise noted.|**Absolute Maximum Ratings**TC = 25°C unless otherwise noted.C = 25°C unless otherwise noted.= 25°C unless otherwise noted.||| |---|---|---|---|---| |**Symbol**|**Parameter**||**FDPF33N25T**
**FDPF33N25TRDTU**|**Unit**| |VDSS|Drain-Source Voltage||250|V| |ID|Drain Current|- Continuous (TC= 25°C)
- Continuous (TC= 100°C)|33*
20.4*|A
A| |IDM|Drain Current|- Pulsed
(Note 1)|132*|A| |VGSS|Gate-Source voltage||± 30|V| |EAS|Single Pulsed Avalanche Energy
(Note 2)||918|mJ| |IAR|Avalanche Current
(Note 1)||33|A| |EAR|Repetitive Avalanche Energy
(Note 1)||23.5|mJ| |dv/dt|Peak Diode Recovery dv/dt
(Note 3)||4.5|V/ns| |PD|Power Dissipation|(TC= 25°C)
- Derate Above 25°C|37
0.29|W
W/°C| |TJ, TSTG|Operating and Storage Temperature Range||-55 to +150|°C| |TL|Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds||300|°C| *Drain current limited by maximum junction temperature. ## **Thermal Characteristics** **FDPF33N25T Symbol Parameter FDPF33N25TRDTU Unit** R θ JC Thermal Resistance, Junction-to-Case, Max. 3.4 ° C/W ~~——————~~ R θ JA Thermal Resistance, Junction-to-Ambient, Max. 62.5 ~~a~~ www.fairchildsemi.com ©2007 Fairchild Semiconductor Corporation FDPF33N25T Rev. C2 **1** ## **Package Marking and Ordering Information** |**Electrical Characteristics**|**Electrical Characteristics**TC= 25°C unless otherwise noted.|= 25°C unless otherwise noted.||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |**Off Characteristics**||||||| |BVDSS|Drain-Source Breakdown Voltage|VGS= 0 V, ID= 250μA, TJ= 25°C|250|--|--|V| |ΔBVDSS
/ΔTJ|Breakdown Voltage Temperature
Coefficient|ID= 250μA, Referenced to 25°C|--|0.25|--|V/°C| |IDSS|Zero Gate Voltage Drain Current|VDS= 250 V, VGS= 0 V
VDS= 200 V, TC= 125°C|--
--|--
--|1
10|μA
μA| |IGSSF|Gate-Body Leakage Current, Forward|VGS= 30 V, VDS= 0 V|--|--|100|nA| |IGSSR|Gate-Body Leakage Current, Reverse|VGS= -30 V, VDS= 0 V|--|--|-100|nA| |**On Characteristics**||||||| |VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 250μA|3.0|--|5.0|V| |RDS(on)|Static Drain-Source
On-Resistance|VGS= 10 V, ID= 16.5 A|--|0.077|0.094|Ω| |gFS|Forward Transconductance|VDS= 40 V, ID= 16.5 A|--|26.6|--|S| |**Dynamic Characteristics**||||||| |Ciss
~~———~~|Input Capacitance
~~———~~|VDS= 25 V, VGS= 0 V,
f = 1.0 MHz
~~———~~
|--
~~———~~|1640
~~———~~|2135
~~———~~|pF
~~———~~| |Coss
~~———~~
|Output Capacitance
~~———~~
||--
~~———~~
|330
~~———~~
|430
~~———~~
|pF
~~———~~
~~=~~| |Crss
~~———~~
|Reverse Transfer Capacitance
~~———~~
||--
~~———~~
|39
~~———~~
|59
~~———~~
|pF
~~———~~
~~=~~| |**Switching Characteristics**
~~———~~
~~===~~||||||| |td(on)
~~**=**~~|Turn-On Delay Time
~~==~~|VDD= 125 V, ID= 33 A,
VGS= 10 V, RG= 25Ω
(Note 4)
~~==~~|--
~~==~~|35
~~==~~|80
~~==~~|ns
~~===~~| |tr
~~**=**~~|Turn-On Rise Time
~~==~~||--
~~==~~|230
~~==~~|470
~~==~~|ns
~~===~~| |td(off)
~~**=**~~|Turn-Off Delay Time
~~==~~||--
~~==~~|75
~~==~~|160
~~==~~|ns
~~===~~| |tf
~~**=**~~|Turn-Off Fall Time
~~==~~||--
~~==~~|120
~~==~~|250
~~==~~|ns
~~===~~| |Qg
~~**=**~~|Total Gate Charge
~~==~~|VDS= 200 V, ID= 33 A,
VGS= 10 V
(Note 4)
~~==~~|--
~~==~~|36.8
~~==~~|48
~~==~~|nC
~~===~~| |Qgs
~~**=** ~~|Gate-Source Charge
~~==~~||--
~~==~~|10
~~==~~|--
~~==~~|nC
~~===~~| |Qgd|Gate-Drain Charge||--|17|--|nC| |**Drain-Source Diode Characteristics and Maximum Ratings**||||||| |IS
~~————~~|Maximum Continuous Drain-Source Diode Forward Current
~~————~~
~~===~~||--
~~===~~|--
~~===~~|33
~~===~~|A
~~===~~| |ISM
~~————~~|Maximum Pulsed Drain-Source Diode Forward Current
~~————~~
~~===~~||--
~~===~~|--
~~===~~|132
~~===~~|A
~~===~~| |VSD
~~————~~|Drain-Source Diode Forward Voltage
~~————~~|VGS= 0 V, IS= 33 A
~~===~~|--
~~===~~|--
~~===~~|1.4
~~===~~|V
~~===~~| |trr
~~————~~|Reverse Recovery Time
~~————~~|VGS= 0 V, IS= 33 A,
dIF/dt =100 A/μs
~~===~~|--
~~===~~|220
~~===~~|--
~~===~~|ns
~~===~~| |Qrr
~~————~~|Reverse Recovery Charge
~~————~~||--
~~===~~|1.71
~~===~~|--
~~===~~|μC
~~===~~| 2. L = 1.35 mH, IAS = 33 A, VDD = 50 V, RG = 25 Ω , starting TJ = 25 ° C. 3. ISD ≤ 33 A, di/dt ≤ 200 A/ μ s, VDD ≤ BVDSS, starting TJ = 25 ° C. 4. Essentially independent of operating temperature typical characteristics. www.fairchildsemi.com ©2007 Fairchild Semiconductor Corporation FDPF33N25T Rev. C2 **2** ## **Typical Performance Characteristics** ## **Figure 1. On-Region Characteristics** **==> picture [161 x 10] intentionally omitted <==** **----- Start of picture text -----**
Figure 2. Transfer Characteristics
**----- End of picture text -----**
**==> picture [435 x 138] intentionally omitted <==** **----- Start of picture text -----**
102 V GS 102
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
101
101 150oC
25 o C
-55oC
100 * Notes : 1. 250 μ s Pulse Test * Notes : 1. V DS = 40V
2. T C = 25 [o] C 2. 250 μ s Pulse Test
10-1 100 101 1002 4 6 8 10 12
VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]
, Drain Current [A]ID , Drain Current [A]ID
**----- End of picture text -----**
## **Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage** ## **Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue** **==> picture [435 x 149] intentionally omitted <==** **----- Start of picture text -----**
0.25
102
0.20
VGS = 10V
0.15
0.10 101 150oC
25 o C
VGS = 20V
0.05 * Notes :
1. V GS = 0V
* Note : TJ = 25 [o] C 2. 250 μ s Pulse Test
0.00 100
0 20 40 60 80 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current [A] VSD, Source-Drain voltage [V]
],
Ω
[
DS(ON)
R
Drain-Source On-Resistance , Reverse Drain Current [A]
IDR
**----- End of picture text -----**
## **Figure 5. Capacitance Characteristics** **Figure 6. Gate Charge Characteristics** **==> picture [411 x 149] intentionally omitted <==** **----- Start of picture text -----**
12
4000
CCCiss oss rss = C = C = Cgsgd ds + C + Cgd gd (Cds = shorted) 10 VVDSDS = 50V = 125V
3000 C oss 8 VDS = 200V
Ciss
6
2000
4
* Note :
1000 Crss 1. V 2. f = 1 MHzGS = 0 V 2
* Note : ID = 33A
0 0
10-1 100 101 0 10 20 30 40
VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]
Capacitances [pF]
, Gate-Source Voltage [V]
GS
V
**----- End of picture text -----**
www.fairchildsemi.com ©2007 Fairchild Semiconductor Corporation FDPF33N25T Rev. C2 **3** ## **Typical Performance Characteristics (Continued)** **==> picture [449 x 606] intentionally omitted <==** **----- Start of picture text -----**
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
1.2 3.0
2.5
1.1
2.0
1.0 1.5
1.0
0.9 * Notes :
1. V 2. IDGS = 250 = 0 V μ A 0.5 * Notes : 1. VGS = 10 V
2. ID = 16.5 A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
TJ, Junction Temperature [oC] TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
40
102 ee<7 ot are —rrse “he 10 μ s
- <<,aaa a C x< . . ‘. . xx ~ x 100 x μ s x . x x' t 30
- > ~ s ~ x 1 ms . = sol
101010 - Ois Limited by R peration in This Area DS(on) ~ J s SS DC - 100 ms x > 10 ms ~~ s Re SSS “~ . ~ x x N ~~ ~ x ~ ~ x ~ eesll x~y 11' | | 2010
* Notes : Sds
2. T 1. T C J = 25 = 150 o C oC N' '
10-1100 10 3. Single Pulse1 102 025 50 75 100 125 150
VDS, Drain-Source Voltage [V] TC, Case Temperature [oC]
Figure 11. Transient Thermal Response Curve
D=0.5
100
0.2
0.1
0.05
10-1 0.02 PDM
0.01 * Notes : t1t2
1. Z θ JC (t) = 3.4 [o] C/W Max.
2. Duty Factor, D=t 1 /t 2
10-2 single pulse 3. T JM - T C = P DM * Z θ JC(t)
10 -5 10-4 10-3 10-2 10-1 100 10 1
t1, Square W ave Pulse Duration [sec]
, (Normalized) , (Normalized)
DSS DS(ON)
BV R
Drain-Source On-Resistance
Drain-Source Breakdown Voltage
, Drain Current [A]ID , Drain Current [A]ID
oC/W]
(t), Thermal Response
(t), Thermal Response [ ZJC θ ZJC θ
**----- End of picture text -----**
www.fairchildsemi.com ©2007 Fairchild Semiconductor Corporation FDPF33N25T Rev. C2 **4** **==> picture [432 x 521] intentionally omitted <==** **----- Start of picture text -----**
VGS
Same Type
50KΩ as DUT Qg
12V 200nF 300nF 10V
VGS VDS Qgs Qgd
DUT
IG = const. 3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS RL VDS 90%
VGS VDD
RG
10%
V 10V GS DUT VGS
td(on) tr td(off) tf
t on t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS L EAS = ----12 L IAS2 --------------------BVBVDSSDSS- VDD
I D BVDSSIAS
RG VDD ID (t)
VV 10V GSGS DUT VDD VDS (t)
t p t p Time
**----- End of picture text -----**
**Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms** www.fairchildsemi.com ©2007 Fairchild Semiconductor Corporation FDPF33N25T Rev. C2 **5** **==> picture [335 x 547] intentionally omitted <==** **----- Start of picture text -----**
DUT +
VDS
_
I SD
L
Driver
RG
Same Type
as DUT VDD
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
VGS D = --------------------------
Gate Pulse Period 10V
( Driver )
ff}
IFM , Body Diode Forward Current
I SD
( DUT ) di/dt
IRM
4 Ne
Body Diode Reverse Current
VDS
( DUT ) Body Diode Recovery dv/dt
VSD VDD
eerie
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
**----- End of picture text -----**
www.fairchildsemi.com ©2007 Fairchild Semiconductor Corporation FDPF33N25T Rev. C2 **6** **==> picture [484 x 490] intentionally omitted <==** **----- Start of picture text -----**
10.36 2.66
A B B
9.96 2.42
3.28
3.40 7.00 0.70
3.08
3.20
6.88
6.48
1 X 45° 16.07
B
15.67
R1.00
2.96
1 3 2.56
1.47 8.50
B
1.24 7.50
R1.00
0.90
2.14
0.70 0.60
4.50 B
0.50 [M] A B 0.45
3.50
4.80
2.54 2.54
B
4.20
4.90
B
4.50
**----- End of picture text -----**
NOTES: - A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. - B DOES NOT COMPLY EIAJ STD. VALUE. - C. ALL DIMENSIONS ARE IN MILLIMETERS. - D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. - E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. - F. DRAWING FILE NAME: TO220N03REV2 **==> picture [566 x 759] intentionally omitted <==** **----- Start of picture text -----**
10.36 2.66
A B B
9.96 2.42
3.28
3.40 7.00 3.08
0.70
3.20
SEE NOTE "F" SEE NOTE "F"
6.88
6.48
1 X 45°
16.07
B
15.67
16.00
15.60
(3.23) B
3
1
1.47
2.96
2.14 1.24
2.56
0.90
10.05 0.70
9.45 0.50 [M] A
30°
0.45
0.60
0.25 B
0.45
2.54 2.54
4.90
B
4.50
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
**----- End of picture text -----**
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