# Power MOSFET, N Channel, 500 V, 18 A, 0.265 ohm, TO-220F, Through Hole ![Product image](https://novapart.co/image/farnell:2453861/) **URL**: https://novapart.co/products/FDPF18N50/power-mosfet-n-channel-500-v-18-a-0265-ohm-to-220f **SKU**: FDPF18N50 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €1.3000 **Stock**: 500+ **Lead Time**: 120 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.22ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Po ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 38.5W | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-220F | | Drain Source Voltage Vds | 500V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 18A | | Drain Source On State Resistance | 0.265ohm | | Gate Source Threshold Voltage Max | 5V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2453861/) ## **ON Semiconductor** ## **Is Now** **==> picture [390 x 69] intentionally omitted <==** **To learn more about onsemi™, please visit our website at www.onsemi.com** **onsemi** and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. ## **FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFET[TM] MOSFET 500 V, 18 A, 265 m** Ω **Features** - RDS(on) = 220 m Ω (Typ.) @ VGS = 10 V, ID = 9 A - Low Gate Charge (Typ. 45 nC) - Low Crss (Typ. 25 pF) - 100% Avalanche Tested ## **Applications** - LCD/LED/PDP TV - Lighting ## **Description** UniFET[TM] MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Uninterruptible Power Supply **==> picture [243 x 79] intentionally omitted <==** **----- Start of picture text -----**
GDS
TO-220 GDS TO-220F
eo 2
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D
G
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**S** **Absolute Maximum Ratings** TC = 25°C unless otherwise noted. **FDPF18N50 / Symbol Parameter FDP18N50 Unit FDPF18N50T** ~~—~~ VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25 ° C) 18 18 * A - Continuous (TC = 100 ° C) 10 . 8 10 . 8 * A IDM Drain Current - Pulsed (Note 1) 72 72 * A VGSS Gate-Source voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 945 mJ IAR Avalanche Current (Note 1) 18 A EAR Repetitive Avalanche Energy (Note 1) 23.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25 ° C) 235 38.5 W - Derate Above 25 ° C 1.88 0.3 W/ ° C ~~a~~ TJ, TSTG Operating and Storage Temperature Range -55 to +150 ° C TL Maximum Lead Temperature for Soldering, 300 ° C 1/8” from Case for 5 Seconds ~~a~~ * Drain current limited by maximum junction temperature ~~ee~~ ## **Thermal Characteristics** |**Symbol**|**Parameter**|**FDP18N50**|**FDPF18N50 /**
**FDPF18N50T**|**Unit**| |---|---|---|---|---| |RθJC|Thermal Resistance, Junction-to-Case, Max.|0.53|3.3|°C/W| |RθJA|Thermal Resistance, Junction-to-Ambient, Max.|62.5|62.5|°C/W| Publication Order Number: FDPF18N50T/D ©2012 Semiconductor Components Industries, LLC. November-2017, Rev 3 ## **Package Marking and Ordering Information** |**Part Number**|**Top Mark**|**Package**|**Packing Method**|**Reel Size**|**Tape Width**|**Quantity**| |---|---|---|---|---|---|---| |FDP18N50|FDP18N50|TO-220|Tube|N/A|N/A|50 units| |FDPF18N50|FDPF18N50|TO-220F|Tube|N/A|N/A|50 units| |FDPF18N50T|FDPF18N50T|TO-220F|Tube|N/A|N/A|50 units| ## **Electrical Characteristics** TC = 25°C unless otherwise noted. |**Electric**|**al Characteristics**TC= 25°C u|nless otherwise noted.||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Conditions**|**Min.**|**Typ.**|**Max**|**Unit**| |**Off Characteristics**||||||| |BVDSS|Drain-Source Breakdown Voltage|VGS= 0 V, ID= 250μA|500|--|--|V| |ΔBVDSS
/ΔTJ|Breakdown Voltage Temperature
Coefficient|ID= 250μA, Referenced to 25°C|--|0.5|--|V/°C| |IDSS|Zero Gate Voltage Drain Current|VDS= 500 V, VGS= 0 V
VDS= 400 V, TC= 125°C|--
--|--
--|1
10|μA
μA| |IGSSF|Gate-Body Leakage Current, Forward|VGS= 30 V, VDS= 0 V|--|--|100|nA| |IGSSR|Gate-Body Leakage Current, Reverse|VGS= -30 V, VDS= 0 V|--|--|-100|nA| |**On Characteristics**||||||| |VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 250μA|3.0|--|5.0|V| |RDS(on)|Static Drain-Source
On-Resistance|VGS= 10 V, ID= 9 A|--|0.220|0.265|Ω| |gFS|Forward Transconductance|VDS= 40 V, ID= 9 A|--|25|--|S| |**Dynamic Characteristics**||||||| |Ciss|Input Capacitance|VDS= 25 V, VGS= 0 V,
f = 1 MHz|--|2200|2860|pF| |Coss|Output Capacitance||--|330|430|pF| |Crss|Reverse Transfer Capacitance||--|25|40|pF| |**Switching Characteristics**||||||| |td(on)|Turn-On Delay Time|VDD= 250 V, ID= 18 A,
VGS= 10 V, RG= 25Ω
(Note 4)|--|55|120|ns| |tr|Turn-On Rise Time||--|165|340|ns| |td(off)|Turn-Off Delay Time||--|95|200|ns| |tf|Turn-Off Fall Time||--|90|190|ns| |Qg|Total Gate Charge|VDS= 400 V, ID= 18 A,
VGS= 10 V
(Note 4)|--|45|60|nC| |Qgs|Gate-Source Charge||--|12.5|--|nC| |Qgd|Gate-Drain Charge||--|19|--|nC| |**Drain-Source Diode Characteristics and Maximum Ratings**||||||| |IS|Maximum Continuous Drain-Source Diode Forward Current||--|--|18|A| |ISM|Maximum Pulsed Drain-Source Diode Forward Current||--|--|72|A| |VSD|Drain-Source Diode Forward Voltage|VGS= 0 V, IS= 18 A|--|--|1.4|V| |trr|Reverse Recovery Time|VGS= 0 V, IS= 18 A,
dIF/dt =100 A/μs|--|500|--|ns| |Qrr|Reverse Recovery Charge||--|5.4|--|μC| ## **Notes:** 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 5.2 mH, IAS = 18 A, VDD = 50 V, RG = 25 Ω , starting TJ = 25 ° C. 3. ISD ≤ 18 A, di/dt ≤ 200 A/ μ s, VDD ≤ BVDSS, starting TJ = 25 ° C. 4. Essentially independent of operating temperature typical characteristics. **www.onsemi.com** **2** ## **Typical Performance Characteristics** ## **Figure 1. On-Region Characteristics** ## **Figure 2. Transfer Characteristics** **==> picture [234 x 168] intentionally omitted <==** **----- Start of picture text -----**
102 Top : 15.0 V VGS
10.0 V
8.0 V
7.0 V
6.5 V
101 Bottom : 5.5 V 6.0 V
100
* Notes :
10-1 1. 250 2. TC = 25 μ s Pulse Test [o] C
10-1 100 101
VDS, Drain-Source Voltage [V]
, Drain Current [A]ID
**----- End of picture text -----**
**==> picture [236 x 168] intentionally omitted <==** **----- Start of picture text -----**
102
101 150 o C
25oC
-55oC
* Notes :
1. VDS = 40V
2. 250 μ s Pulse Test
100
2 4 6 8 10 12
VGS, Gate-Source Voltage [V]
, Drain Current [A]ID
**----- End of picture text -----**
**Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage** **Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue** **==> picture [226 x 174] intentionally omitted <==** **----- Start of picture text -----**
0.6
0.5
VGS = 10V
0.4
0.3
VGS = 20V
0.2
* Note : TJ = 25 [o] C
0.1
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
ID, Drain Current [A]
], Drain-Source On-Resistance
Ω
[
DS(ON)
R
**----- End of picture text -----**
**==> picture [236 x 174] intentionally omitted <==** **----- Start of picture text -----**
102
101
150 o C
25 o C * Notes :
1. VGS = 0V
2. 250 μ s Pulse Test
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VSD, Source-Drain voltage [V]
, Reverse Drain Current [A]
IDR
**----- End of picture text -----**
## **Figure 5. Capacitance Characteristics** **Figure 6. Gate Charge Characteristics** **==> picture [226 x 172] intentionally omitted <==** **----- Start of picture text -----**
5000
Ciss = Cgs + Cgd (Cds = shorted)
C oss = C ds + C gd
4000 Crss = Cgd
Coss
3000 C iss
2000
* Note :
1000 C rss 2. f = 1 MHz 1. VGS = 0 V
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Capacitances [pF]
**----- End of picture text -----**
**==> picture [232 x 170] intentionally omitted <==** **----- Start of picture text -----**
12
10 V DS = 100V
VDS = 250V
8 V DS = 400V
6
4
2
* Note : ID = 18A
0
0 10 20 30 40 50
QG, Total Gate Charge [nC]
, Gate-Source Voltage [V]
GS
V
**----- End of picture text -----**
**www.onsemi.com** **3** ## **Typical Performance Characteristics (Continued)** **Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature** **==> picture [443 x 388] intentionally omitted <==** **----- Start of picture text -----**
1.2 3.0
2.5
1.1
2.0
1.0 1.5
1.0
0.9 * Notes :
2. I1. VDGS = 250 = 0 V μ A 0.5 * Notes :1. VGS = 10 V
2. ID = 9 A
0.8
-100 -50 0 50 100 150 200 0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature [oC] TJ, Junction Temperature [oC]
Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
- FDP18N50 - FDPF18N50 / FDPF18N50T
102 102
10 μ s
100 μ s 10 μ s
101 10 ms 1 ms 101 1 ms100 μ s
100 ms 10 ms
Operation in This Area DC Operation in This Area 100 ms
100 is Limited by R DS(on) 100 is Limited by R DS(on) DC
10-1 * Notes : 10-1 * Notes :
1. T C = 25 oC 1. T C = 25 oC
2. T J = 150 o C 2. T J = 150 o C
3. Single Pulse 3. Single Pulse
10-2 10-2
100 101 102 100 101 102
VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V]
, (Normalized) , (Normalized)
BVDSS RDS(ON)
Drain-Source On-Resistance
Drain-Source Breakdown Voltage
, Drain Current [A]ID , Drain Current [A]ID
**----- End of picture text -----**
**Figure 9-1. Maximum Safe Operating Area - FDP18N50** **Figure 10. Maximum Drain Current vs. Case Temperature** **==> picture [217 x 179] intentionally omitted <==** **----- Start of picture text -----**
20
15
10
5
0
25 50 75 100 125 150
TC, Case Temperature [ o C]
, Drain Current [A]ID
**----- End of picture text -----**
**www.onsemi.com** **4** ## **Typical Performance Characteristics (Continued)** **Figure 11-1. Transient Thermal Response Curve - FDP18N50** **==> picture [310 x 173] intentionally omitted <==** **----- Start of picture text -----**
1 0 0
D = 0 .5
1 0 -1 0 .2
0 .1 PDM
0 .0 5 t 1
0 .0 2 * N o te s : t 2
1 0 -2 0 .0 1 2 . D u ty F a c to r, D 1 . Z θ JC (t) = 0 .5 3 [o] C /W = t 1/t 2 M a x .
sin g le p u lse 3 . T JM - T C = P D M * Z θ JC (t)
1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1
t 1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]
oC/W](t), Thermal Response
(t), Thermal Response [ZJCZ θ JC θ
**----- End of picture text -----**
**Figure 11-2. Transient Thermal Response Curve - FDPF18N50 / FDPF18N50T** **==> picture [310 x 174] intentionally omitted <==** **----- Start of picture text -----**
D = 0 .5
1 0 0
0 .2
0 .1
1 0 -1 0 .0 20 .0 5 PDM t1
0 .0 1 * N o te s : t2
1 . Z θ JC (t) = 3 .3 [o] C /W M a x.
2 . D u ty F a c to r, D = t 1 /t 2
1 0 -2 s in g le p u lse 3 . T JM - T C = P D M * Z θ JC (t)
1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1
t 1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]
oC/W]
(t), Thermal Response
(t), Thermal Response [Z JC θ
ZJC θ
**----- End of picture text -----**
**www.onsemi.com** **5** **==> picture [392 x 449] intentionally omitted <==** **----- Start of picture text -----**
IG = const.
F
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS RL VDS 90%
VGS VDD
RG
10%
V 10V GS DUT VGS
td(on) tr td(off) tf
=n wa t on 4S t off
Figure 13. Resistive Switching Test Circuit & Waveforms
Vos oy5 EASa“a Las?LIAS
lo oy} BVpss
of las
>in (ad) =F Von Ip (t)
VGS TL DUT Vop
wie
2 }<—— t, ——e|_ Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
**----- End of picture text -----**
**www.onsemi.com** **6** **==> picture [467 x 542] intentionally omitted <==** **----- Start of picture text -----**
DUT +
VDS
_
I SD
L
Driver
RG
Same Type
as DUT VDD
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
VGS D = --------------------------
Gate Pulse Period 10V
( Driver )
IFM , Body Diode Forward Current
I SD
( DUT ) di/dt
IRM
Body Diode Reverse Current
VDS
( DUT ) Body Diode Recovery dv/dt
VSD VDD
Body Diode
Forward Voltage Drop
**----- End of picture text -----**
**Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms** **www.onsemi.com** **7** ## **Mechanical Dimensions** ## **Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB** _Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products._ **www.onsemi.com** **8** ## **Mechanical Dimensions** ## **Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead** _Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products._ **www.onsemi.com** **9** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor **N. 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