# Dual MOSFET, N Channel, 25 V, 100 A, 0.0038 ohm ![Product image](https://novapart.co/image/farnell:3616904/) **URL**: https://novapart.co/products/FDPC8016S/dual-mosfet-n-channel-25-v-100-a-00038-ohm **SKU**: FDPC8016S **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Dual MOSFETs **Price**: €0.5690 **Stock**: 10+ **Lead Time**: 225 days (indicative) ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 8Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Transistor Case Style | PQFN | | Operating Temperature Max | 150°C | | Power Dissipation N Channel | 42W | | Power Dissipation P Channel | - | | Drain Source Voltage Vds N Channel | 25V | | Drain Source Voltage Vds P Channel | - | | Continuous Drain Current Id N Channel | 100A | | Continuous Drain Current Id P Channel | - | | Drain Source On State Resistance N Channel | 0.0038ohm | | Drain Source On State Resistance P Channel | - | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3616904/) **Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ## MOSFET – Dual, N‐Channel, Asymmetric, POWERTRENCH , Power Clip 25 V ## **ELECTRICAL CONNECTION** ## FDPC8016S ## **General Description** This device includes two specialized N−Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency. ## **Features** Q1: N-Channel - Max RDS(on) = 3.8 m Q at VGS = 10 V, ID = 20 A ## **N-Channel MOSFET** **==> picture [135 x 60] intentionally omitted <==** **----- Start of picture text -----**
PIN1
Top View Bottom View
**----- End of picture text -----**
**PQFN8 5.00x6.00x0.75, 1.27P (Power Clip 56) CASE 483AR** - Max RDS(on) = 4.7 m Q at VGS = 4.5 V, ID = 18 A ## **PIN ASSIGNMENT** ## Q2: N-Channel - Max RDS(on) = 1.4 m Q at VGS = 10 V, ID = 35 A - Max RDS(on) = 1.7 m Q at VGS = 4.5 V, ID = 32 A - Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses - MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing **==> picture [106 x 51] intentionally omitted <==** **----- Start of picture text -----**
HSG ! H LSG
| 1
GR mitHil| eeiG SW
V+ mili tn SW
V+ ad!iJ L418ac SW
*
PAD9
GND(LSS)
**----- End of picture text -----**
*PAD10 V+(HSD) - These Devices are Pb−Free and are RoHS Compliant ## **MARKING DIAGRAM** ## **Applications** - Computing - Communications - General Purpose Point of Load **==> picture [155 x 89] intentionally omitted <==** **----- Start of picture text -----**
&Z&3&K
05OD
15OD
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
05OD 15OD = Specific Device Code
**----- End of picture text -----**
## **ORDERING INFORMATION** See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: **FDPC8016S/D** **1** © Semiconductor Components Industries, LLC, 2016 **September, 2024 − Rev. 7** **FDPC8016S** ## **PINOUT DESCRIPTION** |**Pin**|**Name**|**Description**|**Pin**|**Name**|**Description**|**Pin**|**Name**|**Description**| |---|---|---|---|---|---|---|---|---| |1|HSG|High Side Gate|3. 4, 10|V+(HSD)|High Side Drain|8|LSG|Low Side Gate| |2|GR|Gate Return|5, 6, 7|SW|Switching Node,
Low Side Drain|9|GND(LSS)|Low Side Source| ## **MOSFET MAXIMUM RATINGS** (TA = 25 ° C, Unless otherwise specified) |**MOSFET MAXIMUM RATINGS**|**MOSFET MAXIMUM RATINGS**(TA = 25A = 25= 25°C, Unless otherwise specified)|||| |---|---|---|---|---| |**Symbol**|**Parameter**|**Q1**|**Q2**|**Unit**| |VDS|Drain to Source Voltage|25 (Note 5)|25 (Note 5)|V| |VGS|Gate to Source Voltage|±12|±12|V| |ID|Drain Current
Continuous (TC= 25°C)
Continuous (TA= 25°C)
Pulsed (TA= 25°C) (Note 4)|60
20 (Note 1a)
75|100
35 (Note 1b)
140|A| |EAS|Single Pulsed Avalanche Energy (Note 3)|73|216|mJ| |PD|Power Dissipation for Single Operation
(TC= 25°C)
(TA= 25°C)|21
2.1 (Note 1a)|42
2.3 (Note 1b)|W| |TJ, TSTG|Operating and Storage Junction Temperature Range|−55 to +150||°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**Symbol**|**Parameter**|**Q1**|**Q2**|**Unit**| |---|---|---|---|---| |R JC|Thermal Resistance, Junction to Case|6.0|3.0|C/W| |R JA|Thermal Resistance, Junction to Ambient|60 (Note 1a)|55 (Note 1b)|C/W| |R JA|Thermal Resistance, Junction to Ambient|130 (Note 1c)|120 (Note 1d)|C/W| **PACKAGE MARKING AND ORDERING INFORMATION** |**Device Marking**
~~le~~|**Device**
~~le~~|**Package**
~~le~~|**Reel Size**
~~le~~|**Tape Width**
~~le~~|**Quantity**
~~le~~| |---|---|---|---|---|---| |05OD/15OD
~~le~~|FDPC8016S
~~le~~|PQFN8
~~le~~|13″
~~le~~|12 mm
~~le~~|3,000 Units
~~le~~| ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**|**ELECTRICAL CHARACTERISTICS**(TJ = 25J = 25= 25°C unless otherwise noted)|C unless otherwise noted)|||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Conditions**|**Type**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |BVDSS|Drain to Source Breakdown Voltage|ID= 250μA, VGS= 0 V|Q1|25|−|−|V| |||ID= 1 mA, VGS= 0 V|Q2|25|−|−|| |BVDSS/ TJ|Breakdown Voltage Temperature|ID= 250μA, referenced to 25°C|Q1|−|24|−|mV/ C| ||Coefficient|ID= 10 mA, referenced to 25°C|Q2|−|28|−|| |IDSS|Zero Gate Voltage Drain Current|VDS= 20 V, VGS= 0 V|Q1|−|−|1|A| |||VDS= 20 V, VGS= 0 V|Q2|−|−|500|| |IGSS|Gate to Source Leakage Current,|VGS= 12 V / −8 V, VDS= 0 V|Q1|−|−|±100|nA| ||Forward|VGS= 12 V / −8 V, VDS= 0 V|Q2|−|−|±100|nA| |**ON CHARACTERISTICS**|||||||| |VGS(th)|Gate to Source Threshold Voltage|VGS= VDS, ID= 250μA
VGS= VDS, ID= 1 mA|Q1
Q2|0.8
1.0|1.3
1.5|2.5
2.5|V| |VGS(th)/ TJ|Gate to Source Threshold Voltage
Temperature Coefficient|ID= 250μA, referenced to 25°C
ID= 10 mA, referenced to 25°C|Q1
Q2|−
−|−4
−3|−
−|mV/ C| **www.onsemi.com** **Share Feedback** Your Opinion Matters **2** **FDPC8016S** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TJ = 25J = 25= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TJ = 25J = 25= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TJ = 25J = 25= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TJ = 25J = 25= 25°C unless otherwise noted)| |---|---|---|---| |**Symbol**
**Unit**
**Max**
**Typ**
**Min**
**Type**
**Test Conditions**
**Parameter**
**ON CHARACTERISTICS**
~~Po~~|||| |RDS(on)
Drain to Source On Resistance||VGS= 10 V, ID= 20 A|Q1
−
2.8
3.8
m| |||VGS= 4.5 V, ID= 18 A|−
3.4
4.7| |||VGS= 10 V, ID= 20 A,|−
3.9
5.3| |||TJ=125°C|| |||VGS= 10 V, ID= 35 A|Q2
−
1.1
1.4| |||VGS= 4.5 V, ID= 32 A|−
1.3
1.7| |||VGS= 10 V, ID= 35 A ,|−
1.5
1.9| |||TJ=125°C|| |gFS
Forward Transconductance
VDS= 5 V, ID= 20 A
VDS= 5 V, ID= 35 A
Q1
Q2
−
−
182
241
−
−
S
~~aCO~~|||| |**DYNAMIC CHARACTERISTICS**
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
~~es~~
~~es~~
~~a~~||Q1:
VDS= 13 V, VGS= 0 V,
f = 1 MHZ
Q2:
VDS= 13 V, VGS= 0 V,
f = 1 MHZ|Q1
Q2
−
−
1695
4715
2375
6600
pF
Q1
Q2
−
−
495
1195
710
1675
pF
Q1
Q2
−
−
54
159
100
290
pF
~~TT TT~~
~~Pf~~
~~PP~~| |Rg
Gate Resistance
Q1
Q2
0.1
0.1
0.4
0.5
1.2
1.5
~~aOO~~|||| |**SWITCHING CHARACTERISTICS**
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
~~a~~
~~ee~~
~~a~~||Q1:
VDD= 13 V, ID= 20 A,
RGEN= 6Ω
Q2:
VDD= 13 V, ID= 35 A,
RGEN= 6Ω|Q1
Q2
−
−
8
13
16
24
ns
Q1
Q2
−
−
2
4
10
10
ns
Q1
Q2
−
−
24
38
38
61
ns
~~PTTy~~
~~PT~~
~~PP~~| |tf
Fall Time
Q1
Q2
−
−
2
3
10
10
ns
Qg
Total Gate Charge
VGS= 0 V to 10 V
Q1: VDD= 13 V, ID= 20 A
Q2: VDD= 13 V, ID= 35 A
Q1
Q2
−
−
25
67
35
94
nC
Qg
Total Gate Charge
VGS= 0 V to 4.5 V
Q1: VDD= 13 V, ID= 20 A
Q2: VDD= 13 V, ID= 35 A
Q1
Q2
−
−
11
31
16
44
nC
~~a~~
~~Py~~
~~ee~~
~~ee~~
~~ee~~|||| |Qgs
Gate to Source Gate Charge
Q1: VDD= 13 V, ID= 20 A
Q2: VDD= 13 V, ID= 35 A
Q1
Q2
−
−
3.4
10
−
−
nC
~~aOO~~|||| |Qgd
Gate to Drain “Miller” Charge
~~a a~~||Q1: VDD= 13 V, ID= 20 A
Q2: VDD= 13 V, ID= 35 A|Q1
Q2
−
−
2.2
6.3
−
−
nC| |**DRAIN-SOURCE DIODE CHARACTERISTICS**|||| |VSD
Source to Drain Diode Forward||VGS= 0 V, IS= 20 A|Q1
−
0.8
1.2
V| |Voltage||VGS= 0 V, IS= 35 A (Note 2)|Q2
0.8
1.2| |trr
Reverse Recovery Time||Q1:|Q1
−
25
40
ns| |||IF= 20 A, di/dt = 100 A/μs|Q2
33
53| |||Q2:|| |Qrr
Reverse Recovery Charge||IF= 35 A, di/dt = 200 A/μs|Q1
Q2
−
10
31
20
50
nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ## NOTES: 1. R JA is determined with the device mounted on a 1 in[2] pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R CA is determined by the user’s board design. > **www.onsemi.com Share Feedback** ~~ee~~ **3** Your Opinion Matters **FDPC8016S** - b) 55 ° C/W when mounted on a 1 in[[2]] pad of 2 oz copper. **==> picture [416 x 221] intentionally omitted <==** **----- Start of picture text -----**
a) 60 ° C/W when mounted on b) 55 ° C/W when mounted on
a 1 in [2] pad of 2 oz copper. a 1 in [[2]] pad of 2 oz copper.
O ; >
ooood ooood
foToTololo) ooo0o0
c) 130 ° C/W when mounted on d) 120 ° C/W when mounted on
a minimum pad of 2 oz copper. a minimum pad of 2 oz copper.
0000
90900 °
G DF DS SF SS G DF DS SF SS
G DF DS SF SS G DF DS SF SS
**----- End of picture text -----**
2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. u 3. Q1: EAS of 73 mJ is based on starting TJ = 25 C; N-ch: L = 3 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V, - 100% tested at L = 0.1 mH, IAS = 24 A. Q2: EAS of 216 mJ is based on starting TJ = 25 C; N-ch: L = 3 mH, IAS = 12 A, VDD = 25 V, VGS = 10 V, - 100% tested at L = 0.1 mH, IAS = 39 A. 4. Pulsed Id limited by junction temperature, td <=10 μ s. Please refer to SOA curve for more details. 5. The continuous VDS rating is 25 V; However, a pulse of 30 V peak voltage for no longer than 100 ns duration at 600 KHz frequency can be applied. **www.onsemi.com** **Share Feedback** Your Opinion Matters **4** **FDPC8016S** ## **TYPICAL CHARACTERISTICS (Q1 N-CHANNEL)** (TJ = 25 ° C unless otherwise noted) **==> picture [210 x 560] intentionally omitted <==** **----- Start of picture text -----**
75
VGS = 10 V
60
VGS = 4.5 V
45
30 T f VGSV = 3 VGS = 3.5 V
VGS = 2.5 V
15 /
PULSE DURATION = 8 s
DUTY CYCLE = 0.5% MAX
0 po
0.0 0.2 0.4 0.6 0.8 1.0
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
1.6
ID = 20 A
1.5
VGS = 10 V
1.4
1.3 cesses
1.2 ys
1.1
1.0
0.9
0.8
0.7
−75 −50 −25 0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE ( [o] C)
Figure 3. Normalized On-Resistance vs.
Junction Temperature
75
PULSE DURATION = 80DUTY CYCLE = 0.5% MAXPULSE DURATION = 8DUTY CYCLE = 0.5% MAXs VDS = 5 V
60
45
TJ = 150 [o] C
30
TJ = 25 [o] C
15
TJ = −55 [o] C
0
1.0 1.5 2.0 2.5 3.0
VGS, GATE TO SOURCE VOLTAGE (V)
, DRAIN CURRENT (A)
ID
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
, DRAIN CURRENT (A)
I D
**----- End of picture text -----**
**Figure 5. Transfer Characteristics** **==> picture [213 x 559] intentionally omitted <==** **----- Start of picture text -----**
5
PULSE DURATION = 8 s
DUTY CYCLE = 0.5% MAX
4
VGS = 2.5 V
3
2 V GS = 3 V
1 a
VGS = 3.5 V VGS = 4.5 V VGS = 10 V
0 ===
0 15 30 45 60 75
ID , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance vs. Drain
Current and Gate Voltage
12
PULSE DURATION = 8 s
DUTY CYCLE = 0.5% MAX
9
ID = 20 A |
6
TJ = 125 [o] C
3
TJ = 25 [o] C
0
1 2 3 4 5 6 7 8 9 10
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs. Gate to Source
Voltage
100
VGS = 0 V
10
1
TJ = 150 [o] C
TJ = 25 [ o] C
0.1
0.01
TJ = −55 [o] C
0.001
0.0 0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
) W
(m
DRAIN TO
rDS(on) ,
SOURCE ON−RESISTANCE
, REVERSE DRAIN CURRENT (A)
IS
**----- End of picture text -----**
**Figure 6. Source to Drain Diode Forward Voltage vs. Source Current** > **www.onsemi.com Share Feedback** ~~Qe”~~ **5** Your Opinion Matters **FDPC8016S** ## **TYPICAL CHARACTERISTICS (Q1 N-CHANNEL)** (TJ = 25 ° C unless otherwise noted) **==> picture [195 x 152] intentionally omitted <==** **----- Start of picture text -----**
10
ID = 20 A
8
eee VDD = 13 V oei
6
VDD = 10 V
4
VDD = 15 V
f
2
0 Zn
0 6 12 18 24 30
Qg, GATE CHARGE (nC)
, GATE TO SOURCE VOLTAGE (V)
GS
V
**----- End of picture text -----**
**Figure 7. Gate Charge Characteristics** **==> picture [199 x 152] intentionally omitted <==** **----- Start of picture text -----**
10000 aoe— esl eens
1000 Ciss
Coss
100
ee
f = 1 MHz
V GS = 0 V Crss
10 -CCCee
0.1 1 10 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 8. Capacitance vs. Drain to Source Voltage** **==> picture [200 x 353] intentionally omitted <==** **----- Start of picture text -----**
30
\
OUTTTAT SCRE TJ = 25 [ o] C ML
10
UIMLTTIN Saal
SSS SSH See TJ = 100 [o] C
SE AT MRNAS TJ = 125 [o] C ET
1 TRCCLMTTETTITRNUTHTML LUIS
0.001 0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
500
100
10 s
10 aateeenin THIS AREA IS cence 100 ert s
LIMITED BY r DS(on)
1 ms
1 SINGLE PULSE 10 ms
T J = MAX RATED DC
R JC = 6.0 [o] C/W CURVE BENT TO
T C = 25 [o] C MEASURED DATA
0.1 lee
0.1 1 10 80
VDS, DRAIN to SOURCE VOLTAGE (V)
, AVALANCHE CURRENT (A)
IAS
, DRAIN CURRENT (A)
I D
**----- End of picture text -----**
**==> picture [208 x 354] intentionally omitted <==** **----- Start of picture text -----**
70
60
=
50
SN VGS = 10 V
40
oe
VGS = 4.5 V
30
20
SS
R JC= 6.0 [o] C/W
10
0 AT|
25 50 75 100 125 150
TC , CASE TEMPERATURE ( [o] C)
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
5000
SINGLE PULSE
R JC = 6.0 [o] C/W
1000
TC = 25 [o] C
Seth ot ot rt
100
10 Hf Ct
10−5 10−4 10−3 10−2 10−1 1
t, PULSE WIDTH (sec)
DRAIN CURRENT (A)I,D
, PEAK TRANSIENT POWER (W)
(PK)
P
**----- End of picture text -----**
**Figure 11. Forward Bias Safe Operating Area** **Figure 12. Single Pulse Maximum Power Dissipation** **www.onsemi.com** **Share Feedback** Your Opinion Matters **6** **FDPC8016S** ## **TYPICAL CHARACTERISTICS (Q1 N-CHANNEL)** (TJ = 25 ° C unless otherwise noted) **==> picture [436 x 162] intentionally omitted <==** **----- Start of picture text -----**
2 || ITT] ||
DUTY CYCLE−DESCENDING ORDER
1
D = 0.5
SS 0.2 0.1 EE[[Set[pee P ye DM TTT
0.1 0.05
0.02
0.01 Seri t1
t2
ps tis Li
0.01 er>...eee 4Le SINGLE PULSE eeGO OO NOTES: Z θ JC (t) = r(t) x ee R θ JC SARATTT[tty
R θ JC = 6.0 [o] C/W
DUTY FACTOR: D = t1/ t2
TJ −TC= P DM x Z θ JC (t)
0.001
10−5 10−4 10−3 10−2 10−1 1
t, RECTANGULAR PULSE DURATION (sec)
THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE TRANSIENT
**----- End of picture text -----**
**Figure 13. Junction-to-Case Transient Thermal Response Curve** **www.onsemi.com** **Share Feedback** Your Opinion Matters **7** **FDPC8016S** ## **TYPICAL CHARACTERISTICS (Q2 N-CHANNEL)** (TJ = 25 ° C unless otherwise noted) **==> picture [202 x 152] intentionally omitted <==** **----- Start of picture text -----**
140
VGS = 10 V
120 WI
VGS = 4.5 V
1008060 TSHfHf/ VGS = 3 VV GS = 3.5 V —— V GS = 2.5 V
40
20 f— PULSE DURATION = 8 s
DUTY CYCLE = 0.5% MAX
0
0.0 0.2 0.4 0.6 0.8
VDS , DRAIN TO SOURCE VOLTAGE (V)
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**Figure 14. On-Region Characteristics** **==> picture [209 x 356] intentionally omitted <==** **----- Start of picture text -----**
1.6
1.5 ID = 35 A
V GS [ = 10 V]
1.4
1.3 | Oo
1.2 | YY
1.1 | Sf
1.0 = an
0.9 nee -
0.8
0.7
−75 −50 −25 0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE ( [o] C)
Figure 16. Normalized On-Resistance vs.
Junction Temperature
140
VDS = 5 V
120
100 TJ = 25 [o] C
80 T J = 125 [o] C
60
TJ = −55 [o] C
40
20 PULSE DURATION = 8 s
DUTY CYCLE = 0.5% MAX
0
1 2 3 4
VGS, GATE TO SOURCE VOLTAGE (V)
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**Figure 18. Transfer Characteristics** **==> picture [214 x 559] intentionally omitted <==** **----- Start of picture text -----**
6.0
PULSE DURATION = 8 s
VGS = 2.5 V DUTY CYCLE = 0.5% MAX
4.5
3.0
VGS = 3 V
1.5
VGS = 3.5 V VGS = 4.5 V VGS = 10 V
0.0
0 20 40 60 80 100 120 140
ID , DRAIN CURRENT (A)
Figure 15. Normalized On-Resistance vs. Drain
Current and Gate Voltage
5
PULSE DURATION = 8 s
DUTY CYCLE = 0.5% MAX
4
ID = 35 A
3
2 : TJ = 125 [o] C
1 :
TJ = 25 [o] C
0 |i
1 2 3 4 5 6 7 8 9 10
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs. Gate to Source
Voltage
200
100
VGS = 0 V
10
TJ = 125 [o] C
1
TJ = 25 [o] C
0.1
TJ = −55 [o] C
0.01
0.001
0.0 0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
) W
(m
DRAIN TO
rDS(on),
SOURCE ON−RESISTANCE
, REVERSE DRAIN CURRENT (A)
I S
**----- End of picture text -----**
**Figure 19. Source to Drain Diode Forward Voltage vs. Source Current** > **www.onsemi.com Share Feedback** ~~Qe”~~ **8** Your Opinion Matters **FDPC8016S** ## **TYPICAL CHARACTERISTICS (Q2 N-CHANNEL)** (TJ = 25 ° C unless otherwise noted) **==> picture [462 x 152] intentionally omitted <==** **----- Start of picture text -----**
10 10000
ID = 35 A
8 C iss
Poo
VDD = 13 V
1000
ee
6
VDD = 10 V a eee Coss
4
VDD = 15 V 100
le ae
2 f = 1 MHz Crss
Ea V GS = 0 V
0 TTTTE
FT ee
0 20 40 60 80 0.1 1 10 25
Qg , GATE CHARGE (nC) VDS , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE (V)
**----- End of picture text -----**
**Figure 20. Gate Charge Characteristics** **Figure 21. Capacitance vs. Drain to Source Voltage** **==> picture [462 x 356] intentionally omitted <==** **----- Start of picture text -----**
50 160
140
Seea St TJ = 25 a [ o] C a P|| | fl
120
VGS = 10 V
100
10 AUS Soa ee
eT TJ = 100 [o] C 80 ee
Limited by Package
sitiETT etl]TTI muiPATTI NesNNN eerreeaaTTT EEFT TTT 60 OS—_~ S
R JC = 3.0 [o] C/W VGS = 4.5 V
TJ = 125 [o] C 40
HS Na
20
iis THEN AY
1 INH HITS 0 a
0.001 0.01 0.1 1 10 100 1000 25 50 75 100 125 150
tAV, TIME IN AVALANCHE (ms) TC , CASE TEMPERATURE ( [o] C)
Figure 22. Unclamped Inductive Figure 23. Maximum Continuous Drain Current
Switching Capability vs. Case Temperature
1000 10000
Sa a Ne AS ae SINGLE PULSE R JC = 3.0 [o] C/W fi
100 Tea eee ee 10 s LENE TP il
TC [ = 25][ o][C]
1000
100 s
10 THIS AREA IS
LIMITED BY r DS(on) 1 ms
SINGLE PULSE 10 ms 100
1 T J J = MAX RATED DC
R JC = 3.0 [ o] Sa Ss ESET
T C [= 25] [o] C CURVE BENT TO MEASURED DATA HH a | Oe ter
0.1 int 10 |
0.1 1 10 80 10 ETAT −5 10−4 TINE 10−3 LUT 10−2 ERIE 10−1 | TTT 1
VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)
DRAIN CURRENT (A)I,D
, AVALANCHE CURRENT (A)
IAS
, DRAIN CURRENT (A)
ID
, PEAK TRANSIENT POWER (W)
(PK)
P
**----- End of picture text -----**
**Figure 24. Forward Bias Safe Operating Area** **Figure 25. Single Pulse Maximum Power Dissipation** **www.onsemi.com** **Share Feedback** Your Opinion Matters **9** **FDPC8016S** ## **TYPICAL CHARACTERISTICS (Q2 N-CHANNEL)** (TJ = 25 ° C unless otherwise noted) **==> picture [436 x 164] intentionally omitted <==** **----- Start of picture text -----**
2 T T TT TTT T I TT]
DUTY CYCLE−DESCENDING ORDER
1
: ee
D = 0.5
0.2 a v [TTT
ee ee eee [ttt
0.1
0.05 PDM
0.1 a
0.02
aoe eee a
0.01
t1
t2
se CoH
0.01 as te NOTES: Lt
Z θ JC (t) = r(t) x R θ JC
aA emPallTS SS SS SINGLE PULSE SC SOIesUUNG eeCSGETCCTSG SG GS GN DUTY FACTOR: D R θ JC = 3.0 [o] C/W = t1/ t2 iilians[Try
[oePo TJ −TC = PDM x Z θ JC (t) CTT)TTT)
0.001 Pot tT Petit LL
10−5 10−4 10−3 10−2 10−1 1
t, RECTANGULAR PULSE DURATION (sec)
THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE TRANSIENT
**----- End of picture text -----**
**Figure 26. Junction-to-Case Transient Thermal Response Curve** **www.onsemi.com** **Share Feedback** Your Opinion Matters **10** **FDPC8016S** ## **TYPICAL CHARACTERISTICS** (continued) ## **SyncFET Schottky Body Diode Characteristics** ON’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 27 shows the reverse recovery characteristic of the FDPC8016S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. **==> picture [452 x 156] intentionally omitted <==** **----- Start of picture text -----**
40 10 −2
35
30 eee 10−3 TJ = 125 [o] C
25 ee a TJ = 100 ae [o] C
20 di / dt = 200 A/ s 10−4
15
10 ee ee —————————
10−5
5
ee a TJ = 25 [o] C
0 Ne =a
−5 ee 10−6 a
50 100 150 200 250 300 350 400 0 5 10 15 20 25
TIME (ns) VDS, REVERSE VOLTAGE (V)
CURRENT (A)
, REVERSE LEAKAGE CURRENT (A)
IDSS
**----- End of picture text -----**
**Figure 27. FDPC8016S SyncFET Body Diode Reverse Recovery Characteristic** **Figure 28. SyncFET Body Diode Reverse Leakage vs. Drain-Source Voltage** POWERTRENCH is a registered trademark and SyncFET is a trademark of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. > **www.onsemi.com Share Feedback** ~~Qe”~~ **11** Your Opinion Matters MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [124 x 29] intentionally omitted <==** **----- Start of picture text -----**
PQFN8 5.00x6.00x0.75, 1.27P
CASE 483AR
ISSUE D
**----- End of picture text -----**
## DATE 06 NOV 2023 Electronic versions are uncontrolled except when accessed directly from the Document Repository. **98AON13666G** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: PQFN8 5.00x6.00x0.75, 1.27P PAGE 1 OF 1** ## **DOCUMENT NUMBER:** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2016 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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