# Dual MOSFET, N Channel, PQFN, Surface Mount ![Product image](https://novapart.co/image/farnell:3004002/) **URL**: https://novapart.co/products/FDPC4044/dual-mosfet-n-channel-pqfn-surface-mount **SKU**: FDPC4044 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Dual MOSFETs **Price**: €2.5500 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 8Pins | | Channel Type | N Channel | | Transistor Mounting | Surface Mount | | Transistor Polarity | N Channel | | Power Dissipation Pd | 2.7W | | Transistor Case Style | PQFN | | Operating Temperature Max | 150°C | | Power Dissipation N Channel | 2.7W | | Power Dissipation P Channel | 2.7W | | Gate Source Threshold Voltage Max | 1.5V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3004002/) ## **FDPC4044** ## **Common Drain N-Channel PowerTrench[®] MOSFET** ## **30 V, 27 A, 4.3 m** Ω ## **General Description** This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow. FDPC4044 combines ON Semiconductor’s advanced PowerTrench[®] process with state of the art packaging process to minimize the on-state resistance. ## **Features** Max rS1S2(on) = 4.3 mΩ at VGS = 10 V, IS1S2 = 27 A Max rS1S2(on) = 6.4 mΩ at VGS = 4.5 V, IS1S2 = 23 A Pakage size/height: 3.3 x 3.3 x 0.8 mm Low inductance packaging shortens rise/fall times, resulting in lower switching losses ## **Applications** MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing **==> picture [379 x 184] intentionally omitted <==** **----- Start of picture text -----**
Battery management
inductance and reduced switch node ringing
Load switch
Battery protection
S1
S2 Pin 1
S2
S2 S1 S1 G1
S1
G2
D2
D1
G1 Pin 1 G2
Bottom Top
S2
Power Clip 33
**----- End of picture text -----**
RoHS Compliant ## **MOSFET Maximum Ratings** TA = 25 °C unless otherwise noted |**Symbol**
**Parameter**|||**Ratings**||**Units**| |---|---|---|---|---|---| |VS1S2
Source1 to Source2 Voltage|||30||V| |VGS
Gate to Source Voltage|(Note 3)||±20||V| |IS1S2
Source1 to Source2 Current -Continuous TA= 25 °C
-Pulsed|(Note 1a)
(Note 2)||27
120||A| |PD
Power Dissipation
TA= 25 °C
Power Dissipation
TA= 25 °C|= 25 °C
(Note 1a)
(Note 1b)||2.7
1||W| |TJ, TSTG
Operatingand Storage Junction Temperature Range|||-55 to +150||°C| |**Thermal Characteristics**|||||| |**Package Marking and Ordering Information**
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
47
°C/W
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
127
~~ye_~~|||||| |**Device Marking**
**Device**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
40CF
FDPC4044
Power Clip33
13 ”
12 mm
3000 units
~~ee~~|||||| ©2013 Semiconductor Components Industries, LLC August-2017, Rev.3 Publication Order Number: FDPC4044/D ## **Electrical Characteristics** TJ = 25 °C unless otherwise noted **Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics** Zero Gate Voltage Source1 to Source2 IS1S2 Current VS1S2 = 24 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = 20 V, VS1S2 = 0 V 100 nA **On Characteristics** VGS(th) Gate to Source Threshold Voltage VGS = VS1S2, IS1S2 = 250 μA 1.2 1.5 3 V VGS =10 V, IS1S2 = 27 A 3.2 4.3 r Static Source1 to Source2 On Resistance VGS = 4.5 V, IS1S2 = 23 A 4.6 6.4 mΩ S1S2(on) VGS = 10 V, IS1S2 = 27 A, 4.5 7 TJ = 125[o] C gFS Forward Transconductance VS1S2 = 10 V, IS1S2 = 27 A 150 S **Dynamic Characteristics** CCiossss InOutput Caput Capacitancepacitance f = 1 MHzVS1S2 = 15 V, VGS = 0 V, 2295627 3215880 ppFF Crss Reverse Transfer Capacitance 66 95 pF **Switching Characteristics** td(on) Turn-On Delay Time 8.5 17 ns ~~OO~~ tr Rise Time VS1S2 = 15 V, IS1S2 = 27 A, 4.8 10 ns td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 Ω 32 52 ns tf Fall Time 5.2 10 ns QQggs Total Gate CharGate to Source1 Gate Charge ge VVS1S2G1S1 = 15 V, I = 10 V, VS1S2G2S2 = 27 A, = 0 V 5.735 49 nCnC Qgd Gate to Source2 “Miller” Charge 4.7 nC **Source1 to Source2 Diode Characteristics** Ifss Maximum Continuous Source1 to Source2 Diode Forward Current 1 A ~~ee~~ Vfss Source1 to Source2 Diode Forward Voltage IVfssG1S1 = 27 A = 0 V, VG2S2 = 4.5 V, (Note 2) 0.8 1.2 V **Notes:** 1. RθJA is determined with the device mounted on a 1 in[2] pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b.127 °C/W when mounted on a a. 47 °C/W when mounted on minimum pad of 2 oz copper. a 1 in[2 ] pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 us, Duty cycle < 2.0%. 3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. **www.onsemi.com** **2** **Typical Characteristics** TJ = 25 °C unless otherwise noted **==> picture [452 x 566] intentionally omitted <==** **----- Start of picture text -----**
120 120
VG1S1 = 10 V VGS = 10 V
VG1S1VG1S1 = = 4 V4.5 V VGS = 4.5 V
80 VG1S1 = 3.5 V 80 VGS = 4 V
VGS = 3.5 V
VG1S1 = 3 V
40 40
PULSE DURATION = 80 DUTY CYCLE = 0.5% MAX μ s VGS = 3 V
VG2S2 = 4.5 V PULSE DURATION = 80 DUTY CYCLE = 0.5% MAX μ s
0 0
0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0
VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure 1. On-Region Characteristics Figure 2. On-Region Characteristics
3 4
VG1S1 = 3 V 3 VGS = 3 V
2
VG1S1 = 3.5V VG1S1 = 4 V VG1S1 = 4.5 V 2 VGS = 3.5 V V GS = 4 V
1
VGS = 4.5 V
PULSE DURATION = 80 μ s VG1S1 = 10 V 1
DUTY CYCLE = 0.5% MAXVG2S2 = 4.5 V PULSE DURATION = 80DUTY CYCLE = 0.5% MAX μ s VGS = 10 V
0 0
0 40 80 120 0 40 80 120
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
Figure 3. Normalized On-Resistance vs Source1 Figure 4. Normalized On-Resistance vs Source1
to Source2 Current and Gate Voltage to Source2 Current and Gate Voltage
1.6 20
IS1S2 = 27 A PULSE DURATION = 80 μ s
VGS = 10 V DUTY CYCLE = 0.5% MAX
1.4
15
IS1S2 = 27 A
1.2
10
1.0
TJ = 125 [o] C
5
0.8
TJ = 25 [o] C
0.6 0
-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Normalized On- Resistance Figure 6. On-Resistance vs Gate to
vs Junction Temperature Source Voltage
SOURCE1 TO SOURCE2 CURRENT (A)IS1S2, ISOURCE1 TO SOURCE2 CURRENT (A)S1S2,
NORMALIZED NORMALIZED
SOURCE1 TO SOURCE2 ON-RESISTANCE SOURCE1 TO SOURCE2 ON-RESISTANCE
) Ω
m
SOURCE1 TO (
,
NORMALIZED
rS1S2(on)
SOURCE2 ON-RESISTANCE
SOURCE1 TO SOURCE2 ON-RESISTANCE
**----- End of picture text -----**
**www.onsemi.com** **3** ## **Typical Characteristics** TJ = 25 °C unless otherwise noted **==> picture [452 x 575] intentionally omitted <==** **----- Start of picture text -----**
120 100
PULSE DURATION = 80 μ s VG1S1 = 0 V, VG2S2 = 4.5 V
DUTY CYCLE = 0.5% MAX
VS1S2 = 5 V 10
80 T J = 150 [o] C
TJ = 150 [o] C 1
TJ = 25 [o] C 0.1
40 TJ = 25 [ o] C
0.01
TJ = -55 [o] C TJ = -55 [o] C
0 0.001
1 2 3 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) Vfss, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics Figure 8. Source1 to Source2 Diode
Forward Voltage vs Source Current
10 10000
vG2S2 = 0 V, IS1S2 = 27 A
Ciss
8
VS1S2 = 10 V
1000
6 Coss
VS1S2 = 15 V
4
VS1S2 = 20 V 100 C rss
2
f = 1 MHz
VGS = 0 V
0 10
0 10 20 30 40 0.1 1 10 30
Qg, GATE CHARGE (nC) VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure 9. Gate Charge Characteristics Figure 10. Capacitance vs Source1
to Source2 Voltage
200 2000
100 1000 SINGLE PULSE
100 us R θ JA = 127 [o] C/W
10 T A = 25 [o] C
100
1 1 ms
THIS AREA IS 10 ms
LIMITED BY r 100 ms 10
DS(on)
0.1 1 s
SINGLE PULSE
10 s
TJ = MAX RATED DC 1
0.01 R θ JA = 127 [ o] C/W CURVE BENT TO
TA = 25 [o] C MEASURED DATA
0.001 0.1
0.01 0.1 1 10 100200 10-4 10-3 10-2 10-1 1 10 100 1000
VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation
CURRENT (A)
SOURCE1 TO SOURCE2 CURRENT (A), , REVERSE SOURCE1 TO SOURCE2 Ifss
IS1S2
CAPACITANCE (pF)
, GATE1 TO SOURCE1 VOLTAGE (V)
G1S1
V
PEAK TRANSIENT POWER (W)
SOURCE1 TO SOURCE2 CURRENT (A), P)(PK,
IS1S2
**----- End of picture text -----**
**www.onsemi.com** **4** **==> picture [457 x 196] intentionally omitted <==** **----- Start of picture text -----**
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
0.05 PDM
0.02
0.01
t1
0.01 SINGLE PULSE t2
R θ JA = 127 [o] C/W NOTES:DUTY FACTOR: D = t 1 /t 2
(Note 1b) PEAK T J = P DM x Z θJA x R θJA + T A
0.001
10-4 10-3 10-2 10-1 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
Z JA θ
IMPEDANCE,
NORMALIZED THERMAL
**----- End of picture text -----**
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