# Power MOSFET, N Channel, 60 V, 65 A, 0.016 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:1324800/)

**URL**: https://novapart.co/products/FDP65N06,/power-mosfet-n-channel-60-v-65-a-0016-ohm-to-220
**SKU**: FDP65N06,
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.2700
**Stock**: 100+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (17-Jan-2022) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 135W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 65A |
| Drain Source On State Resistance | 0.016ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1324800/)

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November 2013<br>**----- End of picture text -----**<br>


## **FDP65N06** 

## **N-Channel UniFET[TM] MOSFET** 

**60 V, 65 A, 16 m** Ω 

## **Features** 

- RDS(on) = 13 mΩ (Typ.) @ VGS = 10 V, ID = 32.5 A 

- Low Gate Charge ( typical 33 nC) 

- Low Crss ( typical  35 pF) 

- Fast Switching 

- Improved dv/dt Capability 

## **Description** 

UniFET[TM ] MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. 

**==> picture [224 x 95] intentionally omitted <==**

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D<br>GDS G<br>TO-220<br>S<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** TC 

. 

|**Absolute Maximum Ratings**|**Absolute Maximum Ratings  **TCC= 25°C unless otherwise noted.|||
|---|---|---|---|
|**Symbol**|**Parameter**|**FDP65N06**|**Units**|
|VDSS|Drain-Source Voltage|60|V|
|ID|Drain Current<br>- Continuous (TC= 25°C)<br>- Continuous (TC= 100°C)|65|A|
|||41|A|
|IDM|Drain Current<br>- Pulsed<br>(Note 1)|260|A|
|VGSS|Gate-Source Voltage|± 20|V|
|EAS|Single Pulsed Avalanche Energy<br>(Note 2)|430|mJ|
|IAR|Avalanche Current<br>(Note 1)|65|A|
|EAR|Repetitive Avalanche Energy<br>(Note 1)|13.5|mJ|
|dv/dt|Peak Diode Recovery dv/dt<br>(Note 3)|4.5|V/ns|
|PD|Power Dissipation (TC= 25°C)|135|W|
||- Derate above 25°C|1.08|W/°C|
|TJ, TSTG|Operating and Storage Temperature Range|-55 to +150|°C|
|TL|Maximum Lead Temperature for Soldering,<br>1/8"from Case for 5 Seconds|300|°C|



## **Thermal Characteristics** 

|**Symbol**|**Parameter**|**FDP65N06**|**Units**|
|---|---|---|---|
|RθJC|Thermal Resistance, Junction-to-Case, Max.|0.92|°C/W|
|RθJA|Thermal Resistance, Junction-to-Ambient, Max.|62.5|°C/W|



www.fairchildsemi.com 

©2006 Fairchild Semiconductor Corporation FDP65N06 Rev. C0 

**1** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~aes~~|**Test Conditions**<br>~~ee~~|**Min**<br>~~es~~|**Typ**|**Max**|**Units**|
|---|---|---|---|---|---|---|
|**Off Characteristics**<br>~~esee~~<br>~~es~~|||||||
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>|VGS= 0 V, ID= 250µA<br>|60<br>|-<br>|-<br>|V<br>|
|∆BVDSS<br>/ ∆TJ<br>~~a~~|Breakdown Voltage Temperature Coefficient<br>|ID= 250µA, Referenced to 25°C<br>|-<br>|0.5<br>|-<br>|V/°C<br>|
|IDSS<br>~~a———E~~|Zero Gate Voltage Drain Current<br>~~———E~~|VDS= 60 V, VGS= 0 V<br>~~———E~~|-<br>~~———E~~|-<br>~~———E~~|1<br>~~———E~~|µA<br>~~———E~~|
|||VDS= 48 V, TC= 125°C<br>~~———E~~|-<br>~~———E~~|-<br>~~———E~~|10<br>~~———E~~|µA<br>~~———E~~|
|IGSSF<br>~~———E~~|Gate-Body Leakage Current, Forward<br>~~———E~~|VGS= 20 V, VDS= 0 V<br>~~———E~~|-<br>~~———E~~|-<br>~~———E~~|100<br>~~———E~~|nA<br>~~———E~~|
|IGSSR<br>~~———E~~|Gate-Body Leakage Current, Reverse<br>~~———E~~|VGS= -20 V, VDS= 0 V<br>~~———E~~|-<br>~~———E~~|-<br>~~———E~~|-100<br>~~———E~~|nA<br>~~———E~~|
|On Characteristics|||||||
|VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 250µA|2.0|-|4.0|V|
|RDS(on)|Static Drain-Source On-Resistance|VGS= 10 V, ID= 32.5 A|-|0.013|0.016|Ω|
|gFS|Forward Transconductance|VDS= 40 V, ID= 32.5 A|-|39|-|S|
|Dynamic Characteristics|||||||
|Ciss<br>~~HE~~|Input Capacitance<br>~~HE~~|VDS= 25 V, VGS= 0 V,<br>f = 1.0 MHz<br>~~HE~~|-<br>~~HE~~|1670<br>~~HE~~|2170<br>~~HE~~|pF<br>~~HE~~|
|Coss<br>~~HE~~|Output Capacitance<br>~~HE~~||-<br>~~HE~~|464<br>~~HE~~|600<br>~~HE~~|pF<br>~~HE~~|
|Crss<br>~~HE~~|Reverse Transfer Capacitance<br>~~HE~~||-<br>~~HE~~|35<br>~~HE~~|52<br>~~HE~~|pF<br>~~HE~~|
|Switching Characteristics<br>~~HE~~|||||||
|td(on)<br>~~ae~~|Turn-On Delay Time<br>~~ae~~|VDD= 30 V, ID= 65A,<br>RG= 25Ω<br>(Note 4)<br>~~soe~~<br>~~ee~~<br>~~PF~~|-<br>~~soe~~|24<br>~~soe~~|58<br>~~soe~~|ns<br>~~soe~~|
|tr<br>~~ae~~|Turn-On Rise Time<br>~~ae~~||-<br>~~soe~~|94<br>~~soe~~|200<br>~~soe~~|ns<br>~~soe~~|
|td(off)<br>~~ae~~<br>~~ee~~|Turn-Off Delay Time<br>~~ae~~<br>~~ee~~||-<br>~~soe~~<br>~~PF~~<br>~~|~~|98<br>~~soe~~<br>~~|~~|210<br>~~soe~~|ns<br>~~soe~~|
|tf<br>~~ae~~<br>~~ee~~|Turn-Off Fall Time<br>~~ae~~<br>~~ee~~||-<br>~~soe~~<br>~~PF~~<br>~~|~~|52<br>~~soe~~<br>~~|~~|114<br>~~soe~~|ns<br>~~soe~~|
|Qg<br>~~ae~~<br>~~ee~~<br>~~OF~~|Total Gate Charge<br>~~ae~~<br>~~ee~~<br>~~OF~~|VDS= 48 V, ID= 65A,<br>VGS= 10 V<br>(Note 4)<br>~~soe~~<br>~~ee~~<br>~~PF~~<br>~~OF~~|-<br>~~soe~~<br>~~PF~~<br>~~|~~<br>~~OF~~|33<br>~~soe~~<br>~~|~~<br>~~OF~~|43<br>~~soe~~<br>~~OF~~|nC<br>~~soe~~<br>~~OF~~|
|Qgs<br>~~OF~~|Gate-Source Charge<br>~~OF~~||-<br>~~OF~~|10<br>~~OF~~|-<br>~~OF~~|nC<br>~~OF~~|
|Qgd<br>~~OF~~|Gate-Drain Charge<br>~~OF~~||-<br>~~OF~~|11<br>~~OF~~|-<br>~~OF~~|nC<br>~~OF~~|
|Drain-Source Diode Characteristics and Maximum Ratings<br>~~OF~~|||||||
|IS|Maximum Continuous Drain-Source Diode Forward Current||-|-|65|A|
|ISM|Maximum Pulsed Drain-Source Diode Forward Current||-|-|260|A|
|VSD<br>~~SS~~|Drain-Source Diode Forward Voltage<br>~~SS~~|VGS= 0 V, IS= 65 A<br>~~SS~~|-<br>~~SS~~|-<br>~~SS~~|1.4<br>~~SS~~|V<br>~~SS~~|
|trr<br>~~SS~~|Reverse Recovery Time<br>~~SS~~|VGS= 0 V, IS= 65 A,<br>dIF/ dt = 100 A/µs<br>~~SS~~|-<br>~~SS~~|62<br>~~SS~~|-<br>~~SS~~|ns<br>~~SS~~|
|Qrr<br>~~SS~~|Reverse Recovery Charge<br>~~SS~~||-<br>~~SS~~|132<br>~~SS~~|-<br>~~SS~~|nC<br>~~SS~~|



1. Repetitive Rating : Pulse width limited by maximum junction temperature. 

2. L = 47 µH, IAS = 65 A, VDD = 50 V, RG = 25 Ω, Starting  TJ = 25°C. 

3. ISD ≤ 65 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, Starting  TJ = 25°C. 

4. Essentially independent of operating temperature. 

©2006 Fairchild Semiconductor Corporation FDP65N06 Rev. C0 

**2** 

www.fairchildsemi.com 

## **Typical Performance Characteristics** 

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Figure 1. On-Region Characteristics<br>**----- End of picture text -----**<br>


**Figure 2. Transfer Characteristics** 

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500<br>300   V GS 150 oC<br>Top :      15.0 V<br>  10.0 V<br>100   8.0 V  7.0 V 100<br>  6.5 V<br>  6.0 V<br>Bottom :    5.5 V 25 oC<br>10<br>10 -55 oC<br>* otes : * N otes :<br>1. 250µs Pulse Test 1. V DS = 40V<br>2 ai 2. T C = 25 l oC 1 2. 250 µ s P ulse T est<br>2 4 8 10<br>0.1 1 10<br>V DS, Drain-Source Voltage [V] V G S, Gate-S ource V oltage [V ]<br>Figure 3. On-Resistance Variation vs.  Figure 4. Body Diode Forward Voltage<br> Drain Current and Gate Voltage Variation vs. Source Current<br>and Temperatue<br>0.14 100<br>0.12<br>0.10<br>VGS = 10V<br>0.08<br>10<br>0.06<br>1500C<br>0.04 VGS = 20V 250C * Note :<br>0.02 * Note : TJ = 25oC 1. V2. 250GS=0Vµs Pulse Test<br>Wf 1<br>0 5 10 15 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>ID, Drain Current [A] VDS, Source-Drain Violtage [V]<br>Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics<br>4000 12<br>Ciss = Cgs + Cgd (Cds = shorted)<br>CCossrss = C = Cgdds + Cgd 10 VDS = 12V<br>3000 Coss VDS = 30V<br>*  Note : 8 VDS = 48V<br>Ciss 2. f = 1 MHz1. VGS = 0 V<br>2000 6<br>4<br>1000 Crss<br>2<br>* Note : ID = 65A<br>0 0<br>10-1 100 101 0 10 20 30 40<br>VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]<br>rain Current [A]<br>, DID<br>, Drain Current [A]ID<br>],<br>Ω<br> [<br>DS(ON)<br>R<br>Drain-Source On-Resistance , Reverse Drain Current [A]<br>IDR<br>Capacitances [pF]<br>, Gate-Source Voltage [V]<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 5. Capacitance Characteristics** 

©2006 Fairchild Semiconductor Corporation FDP65N06 Rev. C0 

**3** 

www.fairchildsemi.com 

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Typical Performance Characteristics (Continued)<br>**----- End of picture text -----**<br>


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Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation<br> vs. Temperature   vs. Temperature<br>1.2 3.0<br>2.5<br>1.1<br>2.0<br>1.0 1.5<br>1.0<br>0.9 *  Not s : *  Notes :<br>2. I1. VDGS = 250  = 0 VµA 0.5 2. I1. VDGS = 32.5 A = 10 V<br>0.8 0.0<br>-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200<br>TJ, Junction Temperature [oC] TJ, Junction Temperature [oC]<br>Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current<br> vs. Case Temperature<br>103 80<br>10 µs 70<br>102 100 µs 60<br>1ms<br>10ms 50<br>100ms<br>101 Operation in This Area  DC 40<br>is Limited by R DS(on)<br>30<br>100 * Notes :1. T2. TCJ = 150  = 25 oCoC 20<br>3. Single Pulse 10<br>10-1100 101 102 025 50 75 100 125 150<br>VDS, Drain-SourceVoltage[V] TC, Case Temperature [oC]<br>Figure 11. Transient Thermal Response Curve<br>100<br>D=0.5<br>0.2<br>10-1 0.1<br>0.05<br>0.02<br>0.01<br>* Notes :<br>10-2 1. ZθJC(t) = 0.92 C/W Max.0<br>single pulse 3. T2. Duty Factor, D=tJM - TC = PDM * Z1θ/tJC2(t)<br>10-5 10-4 10-3 10-2 10-1 100 101<br>t1, Square Wave Pulse Duration [sec]<br>, (Normalized) , (Normalized)<br>DSS DS(ON)<br>BV R<br>Drain-Source On-Resistance<br>Drain-Source Breakdown Voltage<br>, Drain Current [A]ID , Drain Current [A]ID<br>C/W] [ o<br>(t), Thermal Response<br>θJC<br>Z<br>**----- End of picture text -----**<br>


©2006 Fairchild Semiconductor Corporation FDP65N06 Rev. C0 

**4** 

www.fairchildsemi.com 

**==> picture [432 x 578] intentionally omitted <==**

**----- Start of picture text -----**<br>
 Figure 12. Gate Charge Test Circuit & Waveform<br>VGS<br>Same Type<br>50KΩ as DUT Qg<br>12V 200nF 300nF 10V<br>VGS VDS Qgs Qgd<br>DUT<br>IG = const. 3mA<br>Charge<br> Figure 13. Resistive Switching Test Circuit & Waveforms<br>VDS RL VDS 90%<br>VGS VDD<br>RG<br>10%<br>V 10V GS DUT VGS<br>td(on) tr td(off) tf<br>t on t off<br> Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms<br>VDS L EAS = ----12 L IAS2 --------------------BVBVDSSDSS- VDD<br>I D BVDSSIAS<br>RG VDD ID (t)<br>VV 10V GSGS DUT VDD VDS (t)<br>t p t p Time<br>**----- End of picture text -----**<br>


©2006 Fairchild Semiconductor Corporation FDP65N06 Rev. C0 

www.fairchildsemi.com 

**5** 

**Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms** 

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**----- Start of picture text -----**<br>
DUT +<br>VDS<br>_<br>I SD<br>L<br>Driver<br>RG<br>Same Type<br>as DUT VDD<br>VGS • dv/dt controlled by  RG<br>• ISD controlled by pulse period<br>Gate Pulse Width<br>VGS D = --------------------------<br>Gate Pulse Period 10V<br>( Driver )<br>ee<br>IFM , Body Diode Forward Current<br>I SD<br>( DUT ) di/dt<br>IRM<br>4 Ne<br>Body Diode Reverse Current<br>VDS<br>( DUT ) Body Diode Recovery dv/dt<br>VSD VDD<br>TT<br>Body Diode<br>Forward Voltage Drop<br>**----- End of picture text -----**<br>


©2006 Fairchild Semiconductor Corporation FDP65N06 Rev. C0 

**6** 

www.fairchildsemi.com 

## **Mechanical Dimensions** 

## **Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB** 

_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products._ 

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: _http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003_ 

©2006 Fairchild Semiconductor Corporation FDP65N06 Rev. C0 

www.fairchildsemi.com 

**7** 

## **TRADEMARKS** 

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|AccuPower™<br>AX-CAP®*<br>BitSiC™<br>Build it Now™<br>CorePLUS™<br>CorePOWER™<br>_CROSSVOLT_™<br>CTL™<br>Current Transfer Logic™<br>DEUXPEED®<br>Dual Cool™<br>EcoSPARK®<br>EfficentMax™<br>ESBC™<br>Fairchild®<br>Fairchild Semiconductor®<br>FACT Quiet Series™<br>FACT®<br>FAST®<br>FastvCore™<br>FETBench™<br>FPS™<br>®|F-PFS™<br>FRFET®<br>Global Power ResourceSM<br>GreenBridge™<br>Green FPS™<br>Green FPS™ e-Series™<br>G_max_™<br>GTO™<br>IntelliMAX™<br>ISOPLANAR™<br>Marking Small Speakers Sound Louder<br>and Better™<br>MegaBuck™<br>MICROCOUPLER™<br>MicroFET™<br>MicroPak™<br>MicroPak2™<br>MillerDrive™<br>MotionMax™<br>mWSaver®<br>OptoHiT™<br>OPTOLOGIC®<br>OPTOPLANAR®|PowerTrench®<br>PowerXS™<br>Programmable Active Droop™<br>QFET®<br>QS™<br>Quiet Series™<br>RapidConfigure™<br>Saving our world, 1mW/W/kW at a time™<br>SignalWise™<br>SmartMax™<br>SMART START™<br>Solutions for Your Success™<br>SPM®<br>STEALTH™<br>SuperFET®<br>SuperSOT™-3<br>SuperSOT™-6<br>SuperSOT™-8<br>SupreMOS®<br>SyncFET™<br>™<br>tm®|Sync-Lock™<br>®*<br>TinyBoost®<br>TinyBuck®<br>TinyCalc™<br>TinyLogic®<br>TINYOPTO™<br>TinyPower™<br>TinyPWM™<br>TinyWire™<br>TranSiC™<br>TriFault Detect™<br>TRUECURRENT®*<br>SerDes™<br>UHC®<br>Ultra FRFET™<br>UniFET™<br>VCX™<br>VisualMax™<br>VoltagePlus™<br>XS™<br>E SYSTEM<br>GENERAL<br>WZ...|
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## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications<br>may change in any manner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later<br>date. Fairchild Semiconductor reserves the right to make changes at any time without<br>notice to improve design.|
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Rev. I66 

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©2006 Fairchild Semiconductor Corporation FDP65N06 Rev. C0 

**8** 



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