# Power MOSFET, N Channel, 200 V, 52 A, 0.041 ohm, TO-220AB, Through Hole
**URL**: https://novapart.co/products/FDP52N20/power-mosfet-n-channel-200-v-52-a-0041-ohm-to
**SKU**: FDP52N20
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0300
**Stock**: 500+
**Lead Time**: 99 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:52A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.041ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V;
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 357W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 52A |
| Drain Source On State Resistance | 0.041ohm |
| Gate Source Threshold Voltage Max | 5V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2453409/)
## FDP52N20
## FDP52N20 N‐Channel UniFET MOSFET **200 V, 52 A, 49 m Description** _
UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
## **Features**
- RDS(on) = 41 m | (Typ.) @ VGS = 10 V, ID = 26 A
- Low Gate Charge (Typ. 49 nC)
## **www.onsemi.com**
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G D >
S
TO−220
CASE 340AT
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- Low CRSS (Typ. 66 pF)
- 100% Avalanche Tested
- These Devices are Pb−Free and are RoHS Compliant
## **Applications**
- PDP TV
- Lighting
- Uninterruptible Power Supply
- AC−DC Power Supply
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D
G
S
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## **ORDERING INFORMATION**
See detailed ordering and shipping information on page 2 of this data sheet.
Publication Order Number: **FDP52N20/D**
**1**
© Semiconductor Components Industries, LLC, 2017 **March, 2018 − Rev. 3**
**FDP52N20**
**ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C, Unless otherwise specified)
|**ABSOLUTE M**|**AXIMUM RATINGS**(TC= 25°C, Unless other|wise specified)|||
|---|---|---|---|---|
|**Symbol**|**Parameter**||**Value**|**Unit**|
|VDSS|Drain to Source Voltage||200|V|
|VGSS|Gate to Source Voltage||±30|V|
|ID|Drain Current|Continuous (TC= 25°C)|52|A|
|||Continuous (TC= 100°C)|33||
|IDM|Drain Current|Pulsed (Note 1)|208|A|
|EAS|Single Pulsed Avalanche Energy (Note 2)||2520|mJ|
|IAR|Avalanche Current (Note 1)||52|A|
|EAR|Repetitive Avalanche Energy (Note 1)||35.7|mJ|
|dv/dt|Peak Diode Recovery dv/dt (Note 3)||4.5|V/ns|
|PD|Power Dissipation|(TC= 25°C)|357|W|
|||Derate Above 25°C|2.86|W/°C|
|TJ, TSTG|Operating and Storage Temperature Range||−55 to +150|°C|
|TL|Maximum Lead Temperature for Soldering, 1/8″f|rom Case for 5 s|300|°C|
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1.4 mH, IAS = 52 A, VDD = 50 V, RG = 25 � , starting TJ = 25 ° C.
3. ISD ≤ 52 A, di/dt ≤ 200 A/ � s, VDD ≤ BVDSS, starting TJ = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
## **THERMAL CHARACTERISTICS**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|R�JC|Thermal Resistance, Junction to Case, Max.|0.35|�C/W|
|R�JA|Thermal Resistance, Junction to Ambient, Max.|62.5||
## **PACKAGE MARKING AND ORDERING INFORMATION**
|**Part Number**|**Top Marking**|**Package**|**Packing Method**|**Reel Size**|**Tape Width**|**Quantity**|
|---|---|---|---|---|---|---|
|FDP52N20|FDP52N20|TO−220|Tube|N/A|N/A|50 Units|
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**2**
**FDP52N20**
**ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted)
|**ELECTRICAL**|**CHARACTERISTICS**(TC= 25°C unl|ess otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|BVDSS|Drain to Source Breakdown Voltage|VGS= 0 V, ID= 250�A, TJ= 25�C|200|−|−|V|
|�BVDSS/�TJ|Breakdown Voltage Temperature
Coefficient|ID= 250�A, Referenced to 25�C|−|0.2|−|V/�C|
|IDSS|Zero Gate Voltage Drain Current|VDS= 200 V, VGS= 0 V|−|−|1|�A|
|||VDS= 160 V, TC= 125�C|−|−|10||
|IGSS|Gate to Body Leakage Current|VGS=±30 V, VDS= 0 V|−|−|±100|nA|
|**ON CHARACTERISTICS**|||||||
|VGS(th)|Gate Threshold Voltage|VGS= VDS, ID= 250�A|3.0|−|5.0|V|
|RDS(on)|Static Drain to Source On Resistance|VGS= 10 V, ID= 26 A|−|0.041|0.049|�|
|gFS|Forward Transconductance|VDS= 40 V, ID= 26 A|−|35|−|S|
|**DYNAMIC CHARACTERISTICS**|||||||
|Ciss|Input Capacitance|VDS= 25 V, VGS= 0 V, f = 1 MHz|−|2230|2900|pF|
|Coss|Output Capacitance||−|540|700|pF|
|Crss|Reverse Transfer Capacitance||−|66|100|pF|
|Qg(tot)|Total Gate Charge at 10 V|VDS= 160 V, ID= 52 A, VGS= 10 V
(Note 5)|−|49|63|nC|
|Qgs|Gate to Source Gate Charge||−|19|−|nC|
|Qgd|Gate to Drain “Miller” Charge||−|24|−|nC|
|**SWITCHING CHARACTERISTICS**|||||||
|td(on)|Turn-On Delay Time|VDD= 100 V, ID= 20 A,
RG= 25�(Note 5)|−|53|115|ns|
|tr|Turn-On Rise Time||−|175|359|ns|
|td(off)|Turn-Off Delay Time||−|48|107|ns|
|tf|Turn-Off Fall Time||−|29|68|ns|
|**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||
|IS|Maximum Continuous Drain to Source|Diode Forward Current|−|−|52|A|
|ISM|Maximum Pulsed Drain to Source Diode Forward Current||−|−|204|A|
|VSD|Drain to Source Diode Forward
Voltage|VGS= 0 V, ISD= 52 A|−|−|1.5|V|
|trr|Reverse Recovery Time|VGS= 0 V, ISD= 52 A,
dIF/dt = 100 A/�s|−|162|−|ns|
|Qrr|Reverse Recovery Charge||−|1.3|−|�C|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Essentially independent of operating temperature typical characteristics.
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**3**
**FDP52N20**
## **TYPICAL PERFORMANCE CHARACTERISTICS**
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V GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101 Bottom: 5.5 V
100
* Notes :
1. 250 μ s Pulse Test
10−1 2. TC = 25 ° C
10−1 100 101
VDS, Drain−Source Voltage [V]
, Drain Current [A]
ID
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**Figure 1. On-Region Characteristics**
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**----- Start of picture text -----**
102
150 ° C
101 25 ° C
−55 ° C
* Notes :
1. VDS = 40V
2. 250 μ s Pulse Test
100
2 4 6 8 10 12
VGS, Gate−Source Voltage [V]
, Drain Current [A]
ID
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**Figure 2. Transfer Characteristics**
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0.12
0.10
0.08
VGS = 10V
0.06
0.04
VGS = 20V
0.02
* Note : TJ = 25 ° C
0.00
0 25 50 75 100 125 150
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs. Drain
Current and Gate Voltage
6000
Ciss = Cgs + C gd (Cds = shorted)
Coss = Cds + Cgd
5000 C rss = C gd
4000 C oss
3000 Ciss
2000
* Note ;
1. V GS = 0 V
1000 Crss 2. f = 1 MHz
0
10−1 100 101
VDS , Drain−Source Voltage [V]
],
Ω
[
DS(ON)
R
Drain−Source On−Resistance
Capacitances [pF]
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**Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage**
**Figure 5. Capacitance Characteristics**
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102
101 150 ° C
25 ° C
* Notes :
1. V GS = 0V
2. 250 μ s Pulse Test
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source−Drain voltage [V]
, Reverse Drain Current [A]
IDR
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**Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature**
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12
10 V DS = 40V
VDS = 100V
8 V DS = 160V
6
4
2
* Note : I D = 52A
0
0 10 20 30 40 50 60
Q G , Total Gate Charge [nC]
, Gate−Source Voltage [V]
GS
V
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**Figure 6. Gate Charge Characteristics**
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**4**
**FDP52N20**
## **TYPICAL PERFORMANCE CHARACTERISTICS**
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1.2
1.1
1.0
0.9 * Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.8
−100 −50 0 50 100 150 200
TJ , Junction Temperature [ ° C]
, (Normalized)
DSS
BV
Drain−Source Breakdown Voltage
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**Figure 7. Breakdown Voltage Variation vs. Temperature**
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3.0
2.5
2.0
1.5
1.0
* Notes :
0.5 1. VGS = 10 V
2. I D = 26 A
0.0
−100 −50 0 50 100 150 200
TJ, Junction Temperature [ ° C]
, (Normalized)
DS(ON)
R
Drain−Source On−Resistance
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**Figure 8. On-Resistance Variation vs. Temperature**
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103
10 μ s
102 100 μ s
1 ms
10 ms
101 100 ms
DC
Operation in This Area
100 is Limited by R DS(on)
* Notes:
1. T C = 25 ° C
10−1 2. TJ = 150 ° C
3. Single Pulse
10−2
100 101 102
VDS , Drain−Source Voltage [V]
, Drain Current [A]
ID
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**Figure 9. Maximum Safe Operation Area**
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60
50
40
30
20
10
0
25 50 75 100 125 150
TC, Case Temperature [ ° C]
, Drain Current [A]
ID
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**Figure 10. Maximum Drain Current**
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D=0.5
10 −1
0.2
0.1 P DM
0.05 t 1
0.02 * Notes : t2
10 −2 0.01 1. Z � JC (t) = 0.35 0 C/W Max.
2. Duty Factor, D=t 1/t 2
single pulse 3. TJM − TC = P DM * Z � JC (t)
10 5− 10 4− 10 −3 10 2− 10 1− 10 0 10 1
t1, Square Wave Pulse Duration [sec]
[o(t), Thermal ResponseC/W]
JC
�
Z
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**Figure 11. Transient Thermal Response Curve**
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**5**
**FDP52N20**
IG = const. an **Figure 12. Gate Charge Test Circuit & Waveform**
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RL
VDS
VGS VDD
RG
V 10 GS V n DUT
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**----- Start of picture text -----**
VDS 90%
10%
VGS |
td(on) tr td(off) tf
wa t on LS t off
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**Figure 13. Resistive Switching Test Circuit & Waveforms**
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VGS
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**Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms**
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**6**
**FDP52N20**
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**----- Start of picture text -----**
DUT +
VDS
_
I SD
L
Driver
R G
Same Type
as DUT VDD
VGS � dv/dt controlled by R G
� ISD controlled by pulse period
Gate Pulse Width
VGS D = Gate Pulse Period 10V
( Driver )
IFM , Body Diode Forward Current
I SD
( DUT ) di/dt
IRM
Body Diode Reverse Current
VDS
( DUT ) Body Diode Recovery dv/dt
VSD VDD
Body Diode
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**Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms**
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**7**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
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TO−220−3LD
CASE 340AT
ISSUE A
SUPPLIER "B" PACKAGE DATE 03 OCT 2017
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Scale 1:1
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Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13818G** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: TO−220−3LD PAGE 1 OF 1**
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2019
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **PUBLICATION ORDERING INFORMATION**
**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative
◊
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