# Power MOSFET, N Channel, 80 V, 223 A, 0.0027 ohm, TO-220, Through Hole ![Product image](https://novapart.co/image/farnell:3253689/) **URL**: https://novapart.co/products/FDP027N08B-F102/power-mosfet-n-channel-80-v-223-a-00027-ohm-to-220 **SKU**: FDP027N08B-F102 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €1.9900 **Stock**: 25+ **Lead Time**: 400 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | PowerTrench | | Qualification | - | | Power Dissipation | 246W | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-220 | | Drain Source Voltage Vds | 80V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 223A | | Drain Source On State Resistance | 0.0027ohm | | Gate Source Threshold Voltage Max | 4.5V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3253689/) ## **FDP027N08B** **N-Channel PowerTrench[®] MOSFET 80 V, 223 A, 2.7 m** Ω ## **Features** - RDS(on) = 2.21 m Ω ( Typ.) @ VGS = 10 V, ID = 100 A - Low FOM RDS(on) * QG - Low Reverse-Recovery Charge, Qrr = 112 nC ## **Description** This N-Channel MOSFET is produced using ON Semiconductor’s PowerTrench[®] process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. - Soft Reverse-Recovery Body Diode - Enables High Efficiency in Synchronous Rectification - Fast Switching Speed - 100% UIL Tested ## **Applications** **==> picture [470 x 374] intentionally omitted <==** **----- Start of picture text -----**
• This device is Pb-Free, Halogen Free/BFR Free and • Synchronous Rectification for ATX / Server / Telecom PSU
is RoHS Compliant • Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
D
GDS G
TO-220
° é
S
MOSFET Maximum Ratings TC = 25 [o] C unless otherwise noted.
Symbol Parameter FDP027N08B_F102 Unit
VDSS Drain to Source Voltage 80 V
VGSS Gate to Source Voltage ±20 V
- Continuous (TC = 25 [o] C, Silicon Limited) 223*
ID Drain Current - Continuous (TC = 100 [o] C, Silicon Limited) 158* A
- Continuous (TC = 25 [o] C, Package Limited) 120
———s IDM Drain Current - Pulsed (Note 1) 892 A
EAS Single Pulsed Avalanche Energy (Note 2) 917 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
PD Power Dissipation - Derate Above 25(TC = 25 [o] C) [o] C 1.64246 W/W [o] C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 oC
= TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120 A.
Thermal Characteristics
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**Symbol Parameter FDP027N08B_F102 Unit** R θ JC Thermal Resistance, Junction to Case, Max. 0.61 oC/W ~~|~~ R θ JA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2011 Semiconductor Components Industries, LLC **1** December 2017, Rev. 3 Publication Order Number: FDP027N08B/D ## **Package Marking and Ordering Information** |**Part Number**|**Part Number**|**Top Mark**|**Package**|**Packing Method**|**Reel Size**||**Tape Width**|**Tape Width**|**Quantity**|**Quantity**| |---|---|---|---|---|---|---|---|---|---|---| |FDP027N08B-F102||FDP027N08B|TO-220|Tube|N/A||N/A||50 units|| |**Electrical Characteristics**TC= 25oC unless otherwise noted.||||||||||| |**Symbol**|**Parameter**|||**Test Conditions**||**Min.**||**Typ.**|**Max.**|**Unit**| |**Off Characteristics**||||||||||| |BVDSS|Drain to Source Breakdown Voltage|||ID= 250μA, VGS= 0 V||80||-|-|V| |ΔBVDSS
/ΔTJ|Breakdown Voltage Temperature
Coefficient|||ID= 250μA, Referenced to 25oC||-||0.05|-|V/oC| |IDSS|Zero Gate Voltage Drain Current|||VDS= 64 V, VGS= 0 V||-||-|1|μA| |||||VDS= 64 V, TC= 150oC||-||-|500|| |IGSS|Gate to BodyLeakage Current|||VGS= ±20 V, VDS= 0 V||-||-|±100|nA| |**On Characteristics**||||||||||| |VGS(th)|Gate Threshold Voltage|||VGS= VDS, ID= 250μA||2.5||-|4.5|V| |RDS(on)|Static Drain to Source On Resistance|||VGS= 10 V, ID= 100 A||-||2.21|2.7|mΩ| |gFS|Forward Transconductance|||VDS= 10 V, ID= 100 A||-||227|-|S| |**Dynamic Characteristics**||||||||||| |Ciss|Input Capacitance|||VDS= 40 V, VGS= 0 V,
f = 1 MHz||-||10170|13530|pF| |Coss|Output Capacitance|||||-||1670|2220|pF| |Crss|Reverse Transfer Capacitance|||||-||35|-|pF| |Coss(er)|EngryRelated Output Capacitance|||VDS= 40 V, VGS= 0 V||-||3025|-|pF| |Qg(tot)|Total Gate Charge at 10V|||VDS= 40 V, VGS= 10 V,
ID= 100A
(Note 4)||-||137|178|nC| |Qgs|Gate to Source Gate Charge|||||-||56|-|nC| |Qgs2|Gate Charge Threshold to Plateau|||||-||25|-|nC| |Qgd|Gate to Drain “Miller” Charge|||||-||28|-|nC| |ESR|Equivalent Series Resistance(G-S)|||f = 1 MHz||-||2.4|-|Ω| |**Switching Characteristics**||||||||||| |td(on)|Turn-On DelayTime|||VDD= 40 V, ID= 100 A,
VGS= 10 V, RG= 4.7Ω
(Note 4)||-||47|104|ns| |tr|Turn-On Rise Time|||||-||66|142|ns| |td(off)|Turn-Off DelayTime|||||-||87|184|ns| |tf|Turn-Off Fall Time|||||-||41|92|ns| |**Drain-Source Diode Characteristics**||||||||||| |IS|Maximum Continuous Drain to Source Diode Forward Current|||||-||-|223*|A| |ISM|Maximum Pulsed Drain to Source Diode Forward Current|||||-||-|892|A| |VSD|Drain to Source Diode Forward Voltage|||VGS= 0 V, ISD= 100 A||-||-|1.3|V| |trr|Reverse RecoveryTime|||VGS= 0 V, VDD= 40 V, ISD= 100 A,
dIF/dt = 100 A/μs||-||80|-|ns| |Qrr|Reverse RecoveryCharge|||||-||112|-|nC| ## **Notes:** 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 3 mH, IAS = 24.72 A, RG = 25 Ω , starting TJ = 25 ° C. 3. ISD ≤ 100 A, di/dt ≤ 200 A/ μ s, VDD ≤ BVDSS, starting TJ = 25 ° C. 4. Essentially independent of operating temperature typical characteristics. **www.onsemi.com 2** ## **Typical Performance Characteristics** **Figure 1. On-Region Characteristics** **==> picture [221 x 176] intentionally omitted <==** **----- Start of picture text -----**
500
100
VGS = 15.0V
10.0V
8.0V
*Notes: 7.0V
6.5V
10 1. 250 μ s Pulse Test 6.0V
2. TC = 25 [o] C 5.5V
5
0.1 1 4
VDS, Drain-Source Voltage[V]
, Drain Current[A]
ID
**----- End of picture text -----**
**Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage** **==> picture [230 x 374] intentionally omitted <==** **----- Start of picture text -----**
3.0
2.5 V GS = 10V
2.0
VGS = 20V
1.5
*Note: TC = 25 [o] C
1.0
0 100 200 300 400 500
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
30000
10000
Ciss
1000
Coss
*Note:
1. VGS = 0V
100 2. f = 1MHz
Crss
Ciss = Cgs + Cgd ( Cds = shorted )
C oss = C ds + C gd
Crss = Cgd
10
0.1 1 10 80
VDS, Drain-Source Voltage [V]
] ,
Ω
m
[
DS(ON)
R
Drain-Source On-Resistance
Capacitances [pF]
**----- End of picture text -----**
**Figure 2. Transfer Characteristics** **==> picture [221 x 397] intentionally omitted <==** **----- Start of picture text -----**
500
*Notes:
1. VDS = 10V
2. 250 μ s Pulse Test
100
175oC
25 o C
10
-55 o C
1
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
100
175 [o] C 25 [o] C
10
*Notes:
1. VGS = 0V
2. 250 μ s Pulse Test
1
0.2 0.4 0.6 0.8 1.0 1.2 1.3
VSD, Body Diode Forward Voltage [V]
, Drain Current[A]
ID
, Reverse Drain Current [A]
IS
**----- End of picture text -----**
**Figure 6. Gate Charge Characteristics** **==> picture [219 x 175] intentionally omitted <==** **----- Start of picture text -----**
10
8 VDS = 16V
VDS = 40V
VDS = 64V
6
4
2
*Note: ID = 100A
0
0 30 60 90 120 150
Qg, Total Gate Charge [nC]
, Gate-Source Voltage [V]
GS
V
**----- End of picture text -----**
**www.onsemi.com** **3** ## **Typical Performance Characteristics** (Continued) **==> picture [468 x 635] intentionally omitted <==** **----- Start of picture text -----**
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
1.08 2.0
1.04
1.5
1.00
1.0
0.96
*Notes: *Notes:
1. VGS = 0V 1. VGS = 10V
2. ID = 250 μ A 2. ID = 100A
0.92 0.5
-80 -40 0 40 80 120 160 200 -100 -50 0 50 100 150 200
TJ, Junction Temperature [ [o] C ] TJ, Junction Temperature [ [o] C ]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
2000 250
1000
10us VGS= 10V
200
100
100us
150
10 1ms
10ms
Operation in This Area DC
1 is Limited by R DS(on) 100
*Notes:
0.1 1. T C = 25 [o] C 50
2. TJ = 175 [o] C
3. Single Pulse R θ JC = 0.61 o C/W
0.01 0
1 10 100 200 25 50 75 100 125 150 175
VDS, Drain-Source Voltage [V] TC, Case Temperature [ [o] C ]
Figure 11. Eoss vs. Drain to Source Voltage Figure 12. Unclamped Inductive
Switching Capability
6 200
100
5
4
TJ = 25 [ o] C
3
10 TJ = 150 [o] C
2
1
0 1
0 20 40 60 80 0.001 0.01 0.1 1 10 100 1000
VDS, Drain to Source Voltage [ V ] tAV, TIME IN AVALANCHE (ms)
, [Normalized] , [Normalized]
DSS DS(on)
BV R
Drain-Source On-Resistance
Drain-Source Breakdown Voltage
, Drain Current [A]
ID , Drain Current [A]
ID
]
J
[μ
,
OSS
E
, AVALANCHE CURRENT (A)
IAS
**----- End of picture text -----**
**www.onsemi.com** **4** ## **Typical Performance Characteristics** (Continued) **Figure 13. Transient Thermal Response Curve** **==> picture [467 x 525] intentionally omitted <==** **----- Start of picture text -----**
1
0.5
0.2
0.1
0.1 PDM
0.05 t 1 t 2
0.02 *Notes:
0.01 1. Z θ JC(t) = 0.61 [o] C/W Max.
0.01 Single pulse 2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * Z θ JC(t)
0.005
10-5 10-4 10-3 10-2 10-1 1
t1Rectangular Pulse Duration [sec], Rectangular se Duration [sec]
oC/W] ] ZJC θ
[
(t), Thermal Response [
JC θ Thermal Response
Z
**----- End of picture text -----**
**www.onsemi.com** **5** **==> picture [392 x 449] intentionally omitted <==** **----- Start of picture text -----**
IG = const.
F
Charge
Figure 14. Gate Charge Test Circuit & Waveform
VDS RL VDS 90%
VGS VDD
RG
10%
V 10V GS DUT VGS
td(on) tr td(off) tf
=n wa t on 4S t off
Figure 15. Resistive Switching Test Circuit & Waveforms
Vos oy5 EASa“a Las?LIAS
lo oy} BVpss
of las
>in (ad) =F Von Ip (t)
VGS TL DUT Vop
wie
2 }<—— t, ——e|_ Time
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
**----- End of picture text -----**
**www.onsemi.com** **6** **==> picture [467 x 542] intentionally omitted <==** **----- Start of picture text -----**
DUT +
VDS
_
I SD
L
Driver
RG
Same Type
as DUT VDD
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
VGS D = --------------------------
Gate Pulse Period 10V
( Driver )
IFM , Body Diode Forward Current
I SD
( DUT ) di/dt
IRM
Body Diode Reverse Current
VDS
( DUT ) Body Diode Recovery dv/dt
VSD VDD
Body Diode
Forward Voltage Drop
**----- End of picture text -----**
**Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms** **www.onsemi.com** **7** ## **Mechanical Dimensions** ## **Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB (Delta)** _Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products._ _Always visit ON Semiconductor’s online packaging area for the most recent package drawings: www.onsemi.com_ **www.onsemi.com 8** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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