# Power MOSFET, N Channel, 40 V, 80 A, 0.0013 ohm, PQFN, Surface Mount ![Product image](https://novapart.co/image/farnell:3003982/) **URL**: https://novapart.co/products/FDMS9408L-F085/power-mosfet-n-channel-40-v-80-a-00013-ohm-pqfn **SKU**: FDMS9408L-F085 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.7510 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 8Pins | | Channel Type | N Channel | | Product Range | PowerTrench | | Qualification | AEC-Q101 | | Power Dissipation | 214W | | Transistor Mounting | Surface Mount | | Transistor Polarity | N Channel | | Power Dissipation Pd | 214W | | Rds(On) Test Voltage | 10V | | On Resistance Rds(On) | 0.0013ohm | | Transistor Case Style | PQFN | | Drain Source Voltage Vds | 40V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 80A | | Drain Source On State Resistance | 0.0013ohm | | Automotive Qualification Standard | AEC-Q101 | | Gate Source Threshold Voltage Max | 1.8V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3003982/) ## **FDMS9408L-F085** ## **N-Channel Logic Level PowerTrench[® ] MOSFET** ## **40 V, 80 A, 1.7 m** Ω ## **Features** Typical RDS(on) = 1.3 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 83 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 ## **Applications** Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers - Electronic Steering - Integrated Starter/Alternator - Distributed Power Architectures and VRM - Primary Switch for 12V Systems **MOSFET Maximum Ratings** TJ = 25°C unless otherwise noted. |**MOSFET Maximum Ratings**|**MOSFET Maximum Ratings**TJ = 25°C unless otherwise noted.J = 25°C unless otherwise noted.= 25°C unless otherwise noted.||| |---|---|---|---| |**Symbol**|**Parameter**|**Ratings**|**Units**| |VDSS|Drain-to-Source Voltage|40|V| |VGS|Gate-to-Source Voltage|±20|V| |ID|Drain Current - Continuous(VGS=10) (Note 1)
TC = 25°C|80|A| ||Pulsed Drain Current
TC = 25°C|See Figure 4|| |EAS|Single Pulse Avalanche Energy
(Note 2)|123|mJ| |PD|Power Dissipation|214|W| ||Derate Above 25oC|1.43|W/oC| |TJ, TSTG|Operatingand Storage Temperature|-55 to + 175|oC| |RθJC|Thermal Resistance, Junction to Case|0.7|oC/W| |RθJA|Maximum Thermal Resistance, Junction to Ambient
(Note 3)|50|oC/W| ## **Notes:** - 1: Current is limited by bondwire configuration. - 2: Starting TJ = 25°C, L = 60uH, IAS = 64A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche. - 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in[2 ] pad of 2oz copper. ## **Package Marking and Ordering Information** |**Device Marking**|**Device**|**Package**|**Reel Size**|**Tape Width**|**Quantity**| |---|---|---|---|---|---| |FDMS9408L|FDMS9408L-F085|Power56|13”|12mm|3000units| Publication Order Number: FDMS9408L-F085/D ©2016 Semiconductor Components Industries, LLC. August-2017, Rev. 2 **1** ## **Electrical Characteristics** TJ = 25°C unless otherwise noted. |**Symbol**|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Units**| |---|---|---|---|---|---|---|---| |**Off Characteristics**|||||||| |BVDSS|Drain-to-Source Breakdown Voltage|ID= 250μA, VGS= 0V||40|-|-|V| |IDSS|Drain-to-Source Leakage Current|VDS= 40V,
VGS= 0V|TJ= 25oC|-|-|1|μA| ||||TJ= 175oC (Note 4)|-|-|1|mA| |IGSS|Gate-to-Source Leakage Current|VGS= ±20V||-|-|±100|nA| |**On Characteristics**|||||||| |VGS(th)|Gate to Source Threshold Voltage|VGS= VDS, ID= 250μA||1.0|1.8|3.0|V| |RDS(on)|Drain to Source On Resistance|ID= 80A, VGS= 4.5V||-|1.9|2.5|mΩ| |||ID= 80A,
VGS= 10V|TJ= 25oC|-|1.3|1.7|mΩ| ||||TJ= 175oC(Note 4)|-|2.2|2.9|mΩ| |**Dynamic Characteristics**|||||||| |Ciss|Input Capacitance|VDS= 20V, VGS= 0V,
f = 1MHz||-|5750|-|pF| |Coss|Output Capacitance|||-|1730|-|pF| |Crss|Reverse Transfer Capacitance|||-|100|-|pF| |Rg|Gate Resistance|f = 1MHz||-|2.7|-|Ω| |Qg(ToT)|Total Gate Charge|VGS= 0 to 10V||-|83|110|nC| |Qg(th)|Threshold Gate Charge|VGS= 0 to 2V||-|10|-|nC| |Qgs|Gate-to-Source Gate Charge|||-|16|-|nC| |Qgd|Gate-to-Drain “Miller“ Charge|||-|13|-|nC| |**Switching Characteristics**|||||||| |ton|Turn-On Time|VDD= 20V, ID= 80A,
VGS= 10V, RGEN= 6Ω||-|-|40|ns| |td(on)|Turn-On Delay|||-|14|-|ns| |tr|Rise Time|||-|13|-|ns| |td(off)|Turn-Off Delay|||-|58|-|ns| |tf|Fall Time|||-|26|-|ns| |toff|Turn-Off Time|||-|-|126|ns| |**Drain-Source Diode Characteristics**|||||||| |VSD|Source-to-Drain Diode Voltage|ISD=80A, VGS= 0V||-|-|1.25|V| |||ISD= 40A, VGS= 0V||-|-|1.2|V| |trr|Reverse-RecoveryTime|IF= 80A, dISD/dt = 100A/μs
VDD= 32V||-|74|111|ns| |Qrr|Reverse-RecoveryCharge|||-|85|128|nC| **Note:** - 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. **www.onsemi.com** **2** ## **Typical Characteristics** **==> picture [433 x 560] intentionally omitted <==** **----- Start of picture text -----**
1.2 300
CURRENT LIMITED VGS = 10V
BY SILICON
1.0 250
0.8 200 CURRENT LIMITED
BY PACKAGE
0.6 150
0.4 100
0.2 50
0.0 0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE( [o] C) TC, CASE TEMPERATURE( [o] C)
Figure 1. Normalized Power Dissipation vs. Case Figure 2. Maximum Continuous Drain Current vs.
Temperature Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10 P DM
0.05
0.02
0.1 0.01 t1
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK T J = P DM x Z θ JC x R θ JC + T C
0.01
10-5 10-4 10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
VGS = 10V FOR TEMPERATURESTC = 25 [o] C
ABOVE 25 [o] C DERATE PEAK
CURRENT AS FOLLOWS:
1000 I = I25 175 - T C
150
100
SINGLE PULSE
10
10-5 10-4 10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
, DRAIN CURRENT (A)
ID
POWER DISSIPATION MULTIPLIER
IMPEDANCE, ZJC θ
NORMALIZED THERMAL
PEAK CURRENT (A)
,
IDM
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**www.onsemi.com** **3** ## **Typical Characteristics** **==> picture [429 x 587] intentionally omitted <==** **----- Start of picture text -----**
1000
2000 If R = 0
1000 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100 100
10 OPERATION IN THIS 100us STARTING TJ = 25 [o] C
AREA MAY BE LIMITED BY rDS(on) 10
1ms STARTING TJ = 150 [o] C
1 SINGLE PULSE 10ms
TJ = MAX RATED 100ms
TC = 25 [o] C
1
0.1 0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100 500 tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to ON Semiconductor Application Notes AN7514
Figure 5. Forward Bias Safe Operating Area and AN7515
Figure 6. Unclamped Inductive Switching
Capability
250 250
PULSE DURATION = 250 μ s VGS = 0 V
DUTY CYCLE = 0.5% MAX 100
200 VDD = 5V
150 10 TJ = 175 [o] C TJ = 25 [ o] C
100
TJ = 175 [o] C TJ = 25 [o] C 1
50
TJ = -55 [o] C
0 0.1
1 2 3 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics
250 250
250 μ s PULSE WIDTH 250 μ s PULSE WIDTH
Tj=25 [o] C Tj=175 [o] C
200 200 VGS
VGS 10V Top
10V Top6V 6V5V
150 5V 150 4.5V
4.5V 4V
4V 3.5V
100 3.5V 3V Bottom 100 3V 3V Bottom
50 50
3V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics Figure 10. Saturation Characteristics
, DRAIN CURRENT (A)
D
I
, AVALANCHE CURRENT (A)
IAS
, DRAIN CURRENT (A)
ID , REVERSE DRAIN CURRENT (A)IS
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
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**www.onsemi.com** **4** **==> picture [433 x 623] intentionally omitted <==** **----- Start of picture text -----**
Typical Characteristics
20 2.5
PULSE DURATION = 250 μ s PULSE DURATION = 250 μ s
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
ID = 80A
15 2.0
10 1.5
5 1.0
TJ = 175 [o] C ID = 80A
VGS = 10V
0 TJ = 25 [o] C 0.5
2 3 4 5 6 7 8 9 10 -80 -40 0 40 80 120 160 200
VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE( [o] C)
Figure 11. RDSON vs. Gate Voltage Figure 12. Normalized RDSON vs. Junction
Temperature
1.3 1.10
VGS = VDS ID = 5mA
ID = 250 μ A
1.1
1.05
0.9
1.00
0.7
0.95
0.5
0.3 0.90
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE( [o] C) TJ, JUNCTION TEMPERATURE ( [o] C)
Figure 13. Normalized Gate Threshold Voltage vs. Figure 14. Normalized Drain to Source
Temperature Breakdown Voltage vs. Junction Temperature
10000 10
Ciss ID = 80A
8
1000 Coss VDD = 20V VDD = 24V
6
VDD = 16V
4
100
Crss 2
f = 1MHz
V GS = 0V
10 0
0.1 1 10 100 0 10 20 30 40 50 60 70 80 90
VDS, DRAIN TO SOURCE VOLTAGE (V) Qg , GATE CHARGE(nC)
Figure 15. Capacitance vs. Drain to Source Figure 16. Gate Charge vs. Gate to Source
Voltage Voltage
) Ω
m
, DRAIN TO SOURCE NORMALIZED
ON-RESISTANCE (
rDS(on)
DRAIN TO SOURCE ON-RESISTANCE
NORMALIZED GATE
THRESHOLD VOLTAGE BREAKDOWN VOLTAGE
NORMALIZED DRAIN TO SOURCE
CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE(V)
GS
V
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