# Power MOSFET, N Channel, 80 V, 80 A, 0.0037 ohm, PQFN, Surface Mount ![Product image](https://novapart.co/image/farnell:3003961/) **URL**: https://novapart.co/products/FDMS86368-F085/power-mosfet-n-channel-80-v-a-00037-ohm-pqfn **SKU**: FDMS86368-F085 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.5020 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 8Pins | | Channel Type | N Channel | | Product Range | PowerTrench | | Qualification | AEC-Q101 | | Power Dissipation | 214W | | Transistor Mounting | Surface Mount | | Transistor Polarity | N Channel | | Power Dissipation Pd | 214W | | Rds(On) Test Voltage | 10V | | On Resistance Rds(On) | 0.0037ohm | | Transistor Case Style | PQFN | | Drain Source Voltage Vds | 80V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 80A | | Drain Source On State Resistance | 0.0037ohm | | Automotive Qualification Standard | AEC-Q101 | | Gate Source Threshold Voltage Max | 3V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3003961/) ## **FDMS86368-F085** ## **N-Channel PowerTrench[® ] MOSFET** ## **80 V, 80 A, 4.5 m** Ω ## **Features** Typical RDS(on) = 3.7 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 57 nC at VGS = 10V, ID = 80 A | UIS Capability ] RoHS Compliant Power 56 | Qualified to AEC Q101 **Applications** :7 Automotive Engine Control PowerTrain Management |] Solenoid and Motor Drivers : Integrated Starter/Alternator | Primary Switch for 12V Systems **MOSFET Maximum Ratings** TJ = 25°C unless otherwise noted. |**Symbol**|**Parameter**|**Ratings**|**Units**| |---|---|---|---| |VDSS|Drain-to-Source Voltage|80|V| |VGS|Gate-to-Source Voltage|±20|V| |ID|Drain Current - Continuous(VGS=10) (Note 1)
TC = 25°C|80|A| ||Pulsed Drain Current
TC = 25°C|See Figure 4|| |EAS|Single Pulse Avalanche Energy
(Note 2)|82|mJ| |PD|Power Dissipation|214|W| ||Derate Above 25oC|1.43|W/oC| |TJ, TSTG|Operatingand Storage Temperature|-55 to + 175|oC| |RθJC|Thermal Resistance, Junction to Case|0.7|oC/W| |RθJA|Maximum Thermal Resistance, Junction to Ambient
(Note 3)|50|oC/W| ## **Notes:** - 1: Current is limited by bondwire configuration. - 2: Starting TJ = 25°C, L = 40uH, IAS = 64A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche. - 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in[2 ] pad of 2oz copper. ## **Package Marking and Ordering Information** |**Device Marking**|**Device**|**Package**|**Reel Size**|**Tape Width**|**Quantity**| |---|---|---|---|---|---| |FDMS86368|FDMS86368-F085|Power56|13”|12mm|3000units| ©2014 Semiconductor Components Industries, LLC. August-2017, Rev3 Publication Order Number: FDMS86368-F085/D **Electrical Characteristics** TJ = 25°C unless otherwise noted. |**Symbol**|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Units**| |---|---|---|---|---|---|---|---| |**Off Characteristics**|||||||| |BVDSS|Drain-to-Source Breakdown Voltage|ID= 250μA, VGS= 0V||80|-|-|V| |IDSS|Drain-to-Source Leakage Current|VDS= 80V
VGS= 0V|TJ= 25oC|-|-|1|μA| ||||TJ= 175oC (Note 4)|-|-|1|mA| |IGSS|Gate-to-Source Leakage Current|VGS= ±20V||-|-|±100|nA| |**On Characteristics**|||||||| |VGS(th)|Gate to Source Threshold Voltage|VGS= VDS, ID= 250μA||2.0|3.0|4.0|V| |RDS(on)|Drain to Source On Resistance|ID= 80A,
VGS= 10V|TJ= 25oC|-|3.7|4.5|mΩ| ||||TJ= 175oC(Note 4)|-|7.4|9.0|mΩ| |**Dynamic Characteristics**|||||||| |Ciss|Input Capacitance|VDS= 40V, VGS= 0V,
f = 1MHz||-|4350|-|pF| |Coss|Output Capacitance|||-|636|-|pF| |Crss|Reverse Transfer Capacitance|||-|20|-|pF| |Rg|Gate Resistance|f = 1MHz||-|2.5|-|Ω| |Qg(ToT)|Total Gate Charge|VGS= 0 to 10V||-|57|75|nC| |Qg(th)|Threshold Gate Charge|VGS= 0 to 2V||-|8|-|nC| |Qgs|Gate-to-Source Gate Charge|||-|23|-|nC| |Qgd|Gate-to-Drain “Miller“ Charge|||-|11|-|nC| |**Switching Characteristics**|||||||| |ton|Turn-On Time|VDD= 40V, ID= 80A,
VGS= 10V, RGEN= 6Ω||-|-|60|ns| |td(on)|Turn-On Delay|||-|23|-|ns| |tr|Rise Time|||-|22|-|ns| |td(off)|Turn-Off Delay|||-|32|-|ns| |tf|Fall Time|||-|13|-|ns| |toff|Turn-Off Time|||-|-|59|ns| |**Drain-Source Diode Characteristics**|||||||| |VSD|Source-to-Drain Diode Voltage|ISD=80A, VGS= 0V||-|-|1.25|V| |||ISD= 40A, VGS= 0V||-|-|1.2|V| |trr|Reverse-RecoveryTime|IF= 80A, dISD/dt = 100A/μs
VDD= 64V||-|58|75|ns| |Qrr|Reverse-RecoveryCharge|||-|49|67|nC| **Note:** - 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. **www.onsemi.com** **2** **==> picture [433 x 578] intentionally omitted <==** **----- Start of picture text -----**
Typical Characteristics
1.2 200
175 CURRENT LIMITED VGS = 10V
1.0 BY PACKAGE
150 CURRENT LIMITED
0.8 BY SILICON
125
0.6 100
75
0.4
50
0.2
25
0.0 0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE( [o] C) TC, CASE TEMPERATURE( [o] C)
Figure 1. Normalized Power Dissipation vs. Case Figure 2. Maximum Continuous Drain Current vs.
Temperature Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10 P DM
0.05
0.02
0.1 0.01 t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
SINGLE PULSE PEAK T J = P DM x Z θ JC x R θ JC + T C
0.01
10-5 10-4 10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
VGS = 10V T C = 25 [o] C
FOR TEMPERATURES
ABOVE 25 [o] C DERATE PEAK
CURRENT AS FOLLOWS:
I = I 2 175 - TC
150
100
SINGLE PULSE
10
10-5 10-4 10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
, DRAIN CURRENT (A)
ID
POWER DISSIPATION MULTIPLIER
IMPEDANCE, ZJC θ
NORMALIZED THERMAL
PEAK CURRENT (A)
,
IDM
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**www.onsemi.com** **3** ## **Typical Characteristics** **==> picture [429 x 587] intentionally omitted <==** **----- Start of picture text -----**
1000 500 If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
100 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
10 100us
1 O AREA MAY BE LIMITED BY r PERATION IN THI DS(on) S 1ms 10 STARTING TJ = 25 [o] C
10ms
0.1 SINGLE PULSETJ = MAX RATED 100ms STARTING T J = 150 [o] C
TC = 25 [o] C
1
0.01 0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100 500 tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to ON Semiconductor Application Notes AN7514
Figure 5. Forward Bias Safe Operating Area and AN7515
Figure 6. Unclamped Inductive Switching
Capability
300 300
PULSE DURATION = 80 μ s
250 DUTY CYCLE = 0.5% MAX 100 VGS = 0 V
VDD = 5V
200
10 TJ = 175 [o] C TJ = 25 [ o] C
150
TJ = 175 [o] C
100
1
TJ = 25 [o] C
50 T J = -55 [o] C
0 0.1
2 3 4 5 6 7 8 9 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics
300 300
80 μ s PULSE WIDTH
250 15V TopVGS 250 Tj=175 [o] C VGS
10V 15V Top
8V 10V
200 7V 200 8V
6V 7V
150 80 μ s PULSE WIDTH 5.5V 5V Bottom 150 6V5.5V
Tj=25 [o] C 5V Bottom
100 100
50 50 5V
5V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics Figure 10. Saturation Characteristics
, DRAIN CURRENT (A)
ID , AVALANCHE CURRENT (A)IAS
, DRAIN CURRENT (A)
ID , REVERSE DRAIN CURRENT (A)IS
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
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**www.onsemi.com 4** **==> picture [433 x 623] intentionally omitted <==** **----- Start of picture text -----**
Typical Characteristics
40 2.2
ID = 80A PULSE DURATION = 80 μ s PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX 2.0 DUTY CYCLE = 0.5% MAX
1.8
30
1.6
TJ = 175 [o] C TJ = 25 [o] C 1.4
20
1.2
1.0
10
0.8 I D = 80A
0.6 VGS = 10V
0 0.4
4 5 6 7 8 9 10 -80 -40 0 40 80 120 160 200
VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE( [o] C)
Figure 11. RDSON vs. Gate Voltage Figure 12. Normalized RDSON vs. Junction
Temperature
1.4 1.10
VGS = VDS ID = 5mA
1.2 ID = 250 μ A
1.05
1.0
0.8 1.00
0.6
0.95
0.4
0.2 0.90
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE( [o] C) TJ, JUNCTION TEMPERATURE ( [o] C)
Figure 13. Normalized Gate Threshold Voltage vs. Figure 14. Normalized Drain to Source
Temperature Breakdown Voltage vs. Junction Temperature
10000 10
ID = 80A
VDD =32V
Ciss 8
1000 VDD = 40V
VDD = 48V
Coss 6
100
4
10
Crss 2
f = 1MHz
VGS = 0V
1 0
0.1 1 10 100 0 10 20 30 40 50 60
VDS, DRAIN TO SOURCE VOLTAGE (V) Qg , GATE CHARGE(nC)
Figure 15. Capacitance vs. Drain to Source Figure 16. Gate Charge vs. Gate to Source
Voltage Voltage
) Ω
m
, DRAIN TO SOURCE NORMALIZED
ON-RESISTANCE (
rDS(on)
DRAIN TO SOURCE ON-RESISTANCE
NORMALIZED GATE
THRESHOLD VOLTAGE BREAKDOWN VOLTAGE
NORMALIZED DRAIN TO SOURCE
CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE(V)
GS
V
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