# Power MOSFET, N Channel, 40 V, 49 A, 2200 µohm, Power 56, Surface Mount ![Product image](https://novapart.co/image/farnell:1885761/) **URL**: https://novapart.co/products/FDMS8460/power-mosfet-n-channel-40-v-49-a-2200-ohm-56 **SKU**: FDMS8460 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €1.0100 **Stock**: 1000+ **Lead Time**: 148 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power D ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 8Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 104W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | Power 56 | | Drain Source Voltage Vds | 40V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 49A | | Drain Source On State Resistance | 2200µohm | | Gate Source Threshold Voltage Max | 1.9V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1885761/) ## MOSFET - N‐Channel, ® POWERTRENCH 40 V, 49 A, 2.2 m 0 ## FDMS8460 ## **General Description** This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH[®] process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. ## **Features** - Max rDS(on) = 2.2 m Q at VGS = 10 V, ID = 25 A - Max rDS(on) = 3.0 m Q at VGS = 4.5 V, ID = 21.7 A - Advanced Package and Silicon combination for low rDS(on) ## **www.onsemi.com** **==> picture [123 x 73] intentionally omitted <==** **----- Start of picture text -----**
S i} 18 D
S 2} ‘7 D
S 3} i6 D
G D
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- MSL1 robust package design - 100% UIL tested **N-Channel MOSFET** - RoHS Compliant ## **Applications** - DC−DC Conversion **MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted) |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |VDS|Drain to Source Voltage|40|V| |VGS|Gate to Source Voltage|±20|V| |ID|Drain Current:
− Continuous (Package limited) TC= 25°C
− Continuous (Silicon limited) TC= 25°C
− Continuous TA= 25°C (Note 1a)
− Pulsed|49
167
25
160|A| |EAS|Single Pulse Avalanche Energy (Note 3)|864|mJ| |PD|Power Dissipation:
TC= 25°C
TA= 25°C (Note 1a)|104
2.5|W| |TJ, TSTG|Operating and Storage Junction Tempera-
ture Range|−55 to
+150|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **==> picture [127 x 86] intentionally omitted <==** **----- Start of picture text -----**
; or Pin 1
Top Bottom
Power 56
(PQFN8)
CASE 483AE
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## **MARKING DIAGRAM** **==> picture [171 x 121] intentionally omitted <==** **----- Start of picture text -----**
S D
S $Y&Z&3&K D
FDMS
S 8460 D
G D
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Data Code (Year & Week)
&K = Lot
FDMS8460 = Specific Device Code
**----- End of picture text -----**
## **ORDERING INFORMATION** See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2012 **January, 2020 − Rev. 5** **FDMS8460/D** **FDMS8460** ## **PACKAGE MARKING AND ORDERING INFORMATION** |**Device Marking**|**Device**|**Package**|**Quantity**| |---|---|---|---| |FDMS8460|FDMS8460|Power 56 (PQFN8)
(Pb-Free / Halogen Free)|3000/Tape&Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ## **THERMAL CHARACTERISTICS** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |R�JC|Thermal Resistance, Junction to Case|1.2|°C/W| |R�JA|Thermal Resistance, Junction to Ambient (Note 1a)|50|| ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRIC**|**AL CHARACTERISTICS**(TJ= 25°C unle|ss otherwise noted)||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||||| |BVDSS|Drain to Source Breakdown Voltage|ID= 250�A, VGS= 0 V|40|||V| |�BVDSS
/�TJ|Breakdown Voltage Temperature
Coefficient|ID= 250�A, referenced to 25°C||32||mV/°C| |IDSS|Zero Gate Voltage Drain Current|VDS= 32 V, VGS= 0 V|||1|�A| |IGSS|Gate to Source Leakage Current, Forward|VGS=±20 V, VDS= 0 V|||±100|nA| |**ON CHARACTERISTICS**||||||| |VGS(th)|Gate to Source Threshold Voltage|VGS= VDS, ID= 250�A|1.0|1.9|3.0|V| |�VGS(th)
/�TJ|Gate to Source Threshold Voltage
Temperature Coefficient|ID= 250�A, referenced to 25°C||−7.5||mV/°C| |rDS(on)|Static Drain to Source On Resistance|VGS= 10 V, ID= 25 A||2.0|2.2|m�| |||VGS= 4.5 V, ID= 21.7 A||2.6|3.0|| |||VGS= 10 V, ID= 25 A, TJ= 125°C||2.6|3.3|| |gFS|Forward Transconductance|VDS= 5 V, ID= 25 A||137||S| |**DYNAMIC CHARACTERISTICS**||||||| |Ciss|Input Capacitance|VDS= 20 V, VGS= 0 V, f = 1 MHz||5415|7205|pF| |Coss|Output Capacitance|||1470|1955|pF| |Crss|Reverse Transfer Capacitance|||170|250|pF| |Rg|Gate Resistance|f = 1MHz|0.1|1.4|3.1|�| |**SWITCHING CHARACTERISTICS**||||||| |td(on)|Turn-On Delay Time|VDD= 20 V, ID= 25 A, VGS= 10 V,
RGEN= 6�||19|35|ns| |tr|Rise Time|||9|19|ns| |td(off)|Turn-Off Delay Time|||48|78|ns| |tf|Fall Time|||7|14|ns| |Qg|Total Gate Charge|VGS= 0 V to 10 V, VDD= 20 V,
ID= 25 A||78|110|nC| |||VGS= 0 V to 4.5 V, VDD= 20 V,
ID= 25 A||36|51|nC| |Qgs|Gate to Source Charge|VDD= 20 V, ID= 25 A||15||nC| |Qgd|Gate to Drain “Miller” Charge|||10||nC| **www.onsemi.com** **2** **FDMS8460** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) (continued) **Symbol Parameter Test Condition Min Typ Max Unit** ~~a~~ **DRAIN-SOURCE DIODE CHARACTERISTICS** VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 25 A (Note 2) 0.8 1.3 V VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 trr Reverse Recovery Time IF = 25 A, di/dt = 100 A/ s 53 85 ns ~~a~~ Qrr Reverse Recovery Charge 40 64 nC ~~es a es~~ Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. R JA is determined with the device mounted on a 1 in[2] pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R CA is determined by the user’s board design. NOTES: a. 50 ° C/W when mounted on a 1 in[2] pad of 2 oz copper. **==> picture [90 x 14] intentionally omitted <==** **----- Start of picture text -----**
b. 125 ° C/W when mounted on a
minimum pad of 2 oz copper.
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2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. Starting TJ = 25 ° C, L = 0.3 mH, IAS = 24 A, VDD = 40 V, VGS = 10 V ## **TYPICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) **==> picture [472 x 152] intentionally omitted <==** **----- Start of picture text -----**
160 5
VGS = 4V PULSE DURATION = 80 s
VGS = 3.5V 4 VGS = 3V DUTY CYCLE = 0.5%MAX
120
|| —_— pty
VGS = 4.5V PULSE DURATION = 80 s VGS = 3.5V
DUTY CYCLE = 0.5%MAX
VGS = 10V 3
80
2 V GS = 4V V GS =4.5V
40
0 Poi VGS = 3V 0.51 eeee VGS =10V
0 1 2 3 0 40 80 120 160
VDS , DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
NORMALIZED
DRAIN CURRENT (A)
ID,
DRAIN TO SOURCE ON−RESISTANCE
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**Figure 1. On Region Characteristics** **Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage** **www.onsemi.com** **3** **FDMS8460** ## **TYPICAL CHARACTERISTICS** (continued) (TJ = 25 ° C unless otherwise noted) **==> picture [449 x 563] intentionally omitted <==** **----- Start of picture text -----**
1.8 10
ID = 25A ID = 25AD = 25A = 25A PULSE DURATION = 80 � s
1.6 V GS = 10V DUTY CYCLE = 0.5%MAX
8
1.4
6
1.2
4 T J = 125 [[o]] C
1.0
2
0.8
TJ = 25J = 25 = 25 [[o]] C
0.6 0
−75 −50 −25 0 25 50 75 100 125 150 2 4 6 8
TJ, JUNCTION TEMPERATURE ( � C) VGS, GATE TO SOURCE VOLTAGE (V)GS, GATE TO SOURCE VOLTAGE (V), GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance Figure 4. On−Resistance vs. Gate
vs. Junction Temperature to Source Voltage
160 800
PULSE DURATION = 80 � s VGS = 0V
DUTY CYCLE = 0.5%MAX 100
120
VDS = 5V 10 TJ = 150 [o] C
TJ = 150 [o] C
80 1 TJ = 25 [o] C
TJ = 25 [o] C 0.1
40 TJ = −55 [o] C
0.01
TJ = −55 oC
0 1E−3
0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
10 10000
ID = 25A VDD = 15V
8 Ciss
VDD = 20V
6 1000
Coss
VDD = 25V
4
2 100
f = 1MHz Crss
VGS = 0V
0 30
0 20 40 60 80 0.1 1 10 40
Qg, GATE CHARGE (nC) V DS , DRAIN TO SOURCE VOLTAGE (V)
) �
m
(
NORMALIZED
rDS(on), DRAIN TO
SOURCE ON−RESISTANCE
DRAIN TO SOURCE ON−RESISTANCE
ID, DRAIN CURRENT (A)
IS, REVERSE DRAIN CURRENT (A)
CAPACITANCE (pF)
VGS , GATE TO SOURCE VOLTAGE (V)
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**==> picture [214 x 153] intentionally omitted <==** **----- Start of picture text -----**
10
PULSE DURATION = 80 � s
ID = 25AD = 25A = 25A
DUTY CYCLE = 0.5%MAX
8
6
4 T J = 125 [[o]] C
2
TJ = 25J = 25 = 25 [[o]] C
0
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)GS, GATE TO SOURCE VOLTAGE (V), GATE TO SOURCE VOLTAGE (V)
) �
m
(
rDS(on), DRAIN TO
SOURCE ON−RESISTANCE
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**Figure 7. Gate Charge Characteristics** **Figure 8. Capacitance vs. Drain to Source Voltage** **www.onsemi.com** **4** **FDMS8460** ## **TYPICAL CHARACTERISTICS** (continued) (TJ = 25 ° C unless otherwise noted) **==> picture [450 x 562] intentionally omitted <==** **----- Start of picture text -----**
40 200
150
10
TJ = 25 [o] C VGS = 10V
100
VGS = 4.5V
TJ = 125 [o] C
50
Limited by Package R s JC = 1.2oC/W
1 0
0.01 0.1 1 10 100 1000 25 50 75 100 125 150
tAV , TIME IN AVALANCHE (ms) Tc , CASE TEMPERATURE ( [o] C)
Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain
Switching Capability Current vs. Case Temperature
400 1000
100 VGS = 10V SINGLE PULSE
R s JA = 125 [o] C/W
100 TA = 25 [o] C
10 1ms
10ms
THIS AREA IS
1
LIMITED BY rDS(on) 100ms 10
SINGLE PULSE
1s
0.1 T J = MAX RATED
R s JA = 125 [o] C/W 10s
TA = 25 [o] C DC 1
0.01 0.5
0.01 0.1 1 10 100 200 10−3 10−2 10−1 1 10 100 1000
VDS , DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation
2
1 DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02 PDM
0.01
t 1
0.01 t2
SINGLE PULSE NOTES:
R s JA = 125 [o] C/W DUTY FACTOR: D = tPEAK T J = P DM x Z s JA 1 x R/t2 s JA + T A
1E−3
10−3 10−2 10−1 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)
DRAIN CURRENT (A)
ID,
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
, PEAK TRANSIENT POWER (W)
PK )
P (
IMPEDANCE,ZJA s
NORMALIZED THERMAL
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**Figure 13. Transient Thermal Response Curve** POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and or other countries. **www.onsemi.com** **5** ## MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [78 x 29] intentionally omitted <==** **----- Start of picture text -----**
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE C
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## DATE 21 JAN 2022 ## **DOCUMENT NUMBER: 98AON13655G** ## **PQFN8 5X6, 1.27P** ## **DESCRIPTION:** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba onsemi **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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