# Power MOSFET, N Channel, 40 V, 248 A, 0.0011 ohm, Power 56, Surface Mount ![Product image](https://novapart.co/image/farnell:2825174/) **URL**: https://novapart.co/products/FDMS8320L/power-mosfet-n-channel-40-v-248-a-00011-ohm-56 **SKU**: FDMS8320L **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €1.1500 **Stock**: 1000+ **Lead Time**: 190 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:248A; Drain Source Voltage Vds:40V; On Resistance Rds(on):800µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 8Pins | | Channel Type | N Channel | | Product Range | PowerTrench | | Qualification | - | | Power Dissipation | 104W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | Power 56 | | Drain Source Voltage Vds | 40V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 248A | | Drain Source On State Resistance | 0.0011ohm | | Gate Source Threshold Voltage Max | 1.7V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2825174/) ## **ON Semiconductor** ## **Is Now** **==> picture [390 x 69] intentionally omitted <==** **To learn more about onsemi™, please visit our website at www.onsemi.com** **onsemi** and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. ## **FDMS8320L** ## **N-Channel PowerTrench[®] MOSFET 40 V, 248 A, 1.1 m** Ω ## **Features** Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 32 A Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 27 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery MSL1 robust package design 100% UIL tested ## **General Description** This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance. ## **Applications** OringFET / Load Switching Synchronous Rectification DC-DC Conversion RoHS Compliant ||**Top**|||**S**
**Bottom**|**S**
a|**S**
a|Pin 1|**S**
—7
it|**S**
—7
it|||abe
18|**D**|**D**|| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |Pin 1
‘||||||**S**|**G**|**S**
**S**
2}
3}|||‘7
is|**D**
**D**||| |||**D **|**D D**|**D**||||**G**
4}|||ib|**D**||| |||**Power 56**||||||||||||| |**MOSFET Maximum Ratings**|**MOSFET Maximum Ratings **TA= 25 °C unless otherwise noted.||= 25 °C unless otherwise noted.|= 25 °C unless otherwise noted.||||||||||| |**Symbol**|||**Parameter**|||||||**Ratings**||||**Units**| |VDS|Drain to Source Voltage|||||||||40||||V| |VGS|Gate to Source Voltage|||||||||±20||||V| ||Drain Current -Continuous|||T|TC|= 25 °C|= 25 °C|(Note 5)||248||||| |ID|-Continuous
-Continuous|||T
T|TC
TA|= 100 °C
A= 25 °C|= 100 °C
= 25 °C|(Note 5)
(Note 1a)||157
36||||A| ||-Pulsed|||||||(Note 4)||943||||| |EAS|Single Pulse Avalanche Energy|||||||(Note 3)||264||||mJ| |PD|Power Dissipation
Power Dissipation|||T
T|TC= 25 °C
TA= 25 °C|= 25 °C
= 25 °C|= 25 °C
= 25 °C|(Note 1a)||104
2.5||||W| |TJ, TSTG|Operatingand Storage Junction Tem||e Junction Temperature Range|||||||-55 to +150||||°C| |**Thermal Characteristics**||||||||||||||| |RθJC|Thermal Resistance, Junction-to-Case|||||||||1.2||||°C/W| |RθJA|Thermal Resistance, Junction-to-Ambient|||||||(Note 1a)||50||||| **MOSFET Maximum Ratings** TA = 25 °C unless otherwise noted. ## **Thermal Characteristics** ## **Package Marking and Ordering Information** |**Device Marking**|**Device**|**Package**|**Reel Size**|**Tape Width**|**Quantity**| |---|---|---|---|---|---| |FDMS8320L|FDMS8320L|Power 56|13 ’’|12 mm|3000 units| ©2012 Semiconductor Componets Industries, LLC. August-2017, Rev . 2 Publication Order Number: FDMS8320L/D ## **Electrical Characteristics** TJ = 25 °C unless otherwise noted. |**Electrical Characteristics**TJ = 25 °C unless otherwise noted.J = 25 °C unless otherwise noted.= 25 °C unless otherwise noted.|**Electrical Characteristics**TJ = 25 °C unless otherwise noted.J = 25 °C unless otherwise noted.= 25 °C unless otherwise noted.| |---|---| |**Off Characteristics**
**On Characteristics**
**Dynamic Characteristics**
**Symbol**
**Parameter**
**Test Conditions**
**Min.**
**Typ.**
**Max.**
**Units**
BVDSS
Drain to Source Breakdown Voltage
ID= 250μA, VGS= 0 V
40
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= 250μA, referenced to 25 °C
21
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 32 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS= ±20 V, VDS = 0 V
100
nA
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250μA
1.0
1.7
3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250μA, referenced to 25 °C
-6
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= 10 V, ID= 32 A
0.8
1.1
mΩ
VGS= 4.5 V, ID= 27 A
1.0
1.5
VGS= 10 V, ID= 32 A, TJ = 125 °C
1.2
1.7
gFS
Forward Transconductance
VDS= 5 V, ID= 32 A
206
S
Ciss
Input Capacitance
VDS= 20 V, VGS= 0 V,
f = 1 MHz
8350
11110
pF
Coss
Output Capacitance
2840
3780
pF
Crss
Reverse Transfer Capacitance
169
295
pF
Rg
Gate Resistance
0.1
1.3
2.6
Ω
~~a~~
~~aGO~~
~~— |~~
~~ee~~
~~es~~
~~ee ee~~
~~es~~
~~ee ee~~
~~a De~~|| |**Switching Characteristics**|| |td(on)
Turn-On DelayTime
VDD= 20 V, ID= 32 A,
VGS= 10 V, RGEN= 6Ω
17
30
ns
tr
Rise Time
19
35
ns
td(off)
Turn-Off DelayTime
68
110
ns
tf
Fall Time
17
30
ns
Qg
Total Gate Charge
VGS= 0 V to 10 V
VDD= 20 V,
ID= 32 A
121
170
nC
Qg
Total Gate Charge
VGS= 0 V to 4.5 V
58
117
nC
Qgs
Gate to Source Charge
19.2
nC
Qgd
Gate to Drain “Miller” Charge
16.5
nC
~~ee~~
~~ee ee ee ee~~
~~ee~~
~~ee~~
~~po |~~
~~ee~~
~~ee~~
~~po |~~
~~ee~~
~~ee~~
~~ee ee ee eee~~
~~ee~~
~~ee ee ee eee~~
~~ee~~
~~po |~~
~~ee~~
~~ee~~
~~po |~~
~~ee~~
~~ee ee ee ee~~|| |**Drain-Source Diode Characteristics**|| |Is
Diode Continuous Forward Current
TC= 25 °C
248
A
~~a eG~~|| |Is, pulse
Diode Pulse Current
TC= 25 °C
943
A
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.1 A(Note 2)
0.65
1.1
V
VGS = 0 V, IS = 32 A(Note 2)
0.74
1.2
~~a~~
~~es~~
~~ee~~
~~ee~~
~~rrr~~|| |trr
Reverse RecoveryTime
IF= 32 A, di/dt = 100 A/μs
68
108
ns
Qrr
Reverse RecoveryCharge
59
95
nC
trr
Reverse RecoveryTime
IF= 32 A, di/dt = 300 A/μs
53
85
ns
Qrr
Reverse RecoveryCharge
104
167
nC
Notes**:**
~~i~~
~~ee~~
~~ee ee eee eee~~
~~a~~
~~ee~~
~~ee ee ee~~
~~ee~~|| |1. RθJAis determined with the device mounted on a 1 in2pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθCAis determined by the user's board design.|| |50 °C/W when mounted on a
1 in2pad of 2 oz copper
125 °C/W when mounted on a
minimum pad of 2 oz copper.
a)
b)|| |**G**
**DF**
**DS**
**SF**
**SS**
**G**
**DF**
**DS**
**SF**
**SS**|| 2. Pulse Test: Pulse Width < 30 0 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 0.3 mH, IAS = 42 A, VDD = 36 V, VGS = 10 V. 4. Pulsed Id please refer to Fig 11 SOA graph for more details. 5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. **www.onsemi.com** **2** **Typical Characteristics** TJ = 25 °C unless otherwise noted. **==> picture [223 x 589] intentionally omitted <==** **----- Start of picture text -----**
150
VGS = 10 V
120 VV GS GS = 4 V = 4.5 V VGS = 3 V
VGS = 3.5 V
90
60
30
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
0
0 0.2 0.4 0.6 0.8 1.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.6
1.5 ID = 32 A
VGS = 10 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ( [o] C)
Figure 3. Normalized On Resistance
vs. Junction Temperature
150
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
120
VDS = 5 V
90
TJ = 150 [o] C
60
TJ = 25 [o] C
30
TJ = -55 [o] C
0
1.0 1.5 2.0 2.5 3.0 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
, DRAIN CURRENT (A)
ID
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**Figure 5. Transfer Characteristics** **==> picture [223 x 381] intentionally omitted <==** **----- Start of picture text -----**
5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
4
VGS = 3 V
3
VGS = 3.5 V
2
1
VGS = 4 V VGS = 4.5 V VGS = 10 V
0
0 30 60 90 120 150
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
5
ID = 32 A PULSE DURATION = 80 DUTY CYCLE = 0.5% MAX μ s
4
3
2
TJ = 125 [o] C
1
TJ = 25 [o] C
0
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
)
Ω
m
(
DRAIN TO
rDS(on),
SOURCE ON-RESISTANCE
**----- End of picture text -----**
**Figure 4. On-Resistance vs. Gate to Source Voltage** **==> picture [223 x 176] intentionally omitted <==** **----- Start of picture text -----**
1000
VGS = 0 V
100
T J = 150 [o] C
10
1 TJ = 25 [ o] C
0.1
0.01
TJ = -55 [o] C
0.001
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
, REVERSE DRAIN CURRENT (A)
IS
**----- End of picture text -----**
**Figure 6. Source to Drain Diode Forward Voltage vs. Source Current** **www.onsemi.com** **3** **Typical Characteristics** TJ = 25 °C unless otherwise noted. **==> picture [464 x 586] intentionally omitted <==** **----- Start of picture text -----**
10 30000
ID = 32 A 10000
8 Ciss
VDD = 20 V
6 Coss
1000
VDD = 16 V VDD = 24 V
4
100
2 f = 1 MHz Crss
V GS = 0 V
0 10
0 25 50 75 100 125 0.1 1 10 40
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain
to Source Voltage
250
200
100
200
VGS = 10 V
T J = 25 [ o] C 150
TJ = 100 [ o] C VGS = 4.5 V
10 100
50
TJ = 125 [o] C
R θ JC = 1.2 [o] C/W
0
1 25 50 75 100 125 150
0.01 0.1 1 10 100 1000
tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE (oC)
Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain
Switching Capability Current vs. Case Temperature
2000 20000
1000 10000 SINGLE PULSE
R θ JC = 1.2 [o] C/W
TC = 25 [o] C
100 10 us
THIS AREA IS
LIMITED BY r 100 us 1000
10 DS(on)
1 ms
SINGLE PULSE
1 T J = MAX RATED 10 ms
R θ JC = 1.2 [o] C/W CURVE BENT TO DC 100
TC = 25 [o] C MEASURE DATA
0.10.1 1 10 100 200 5010-5 10-4 10-3 10-2 10-1 1
VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)
CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE (V)
GS
V
DRAIN CURRENT (A)
,
ID
, AVALANCHE CURRENT (A)
IAS
, DRAIN CURRENT (A)
D
I PEAK TRANSIENT POWER (W)
,
(PK)
P
**----- End of picture text -----**
**Figure 11. Forward Bias Safe Operating Area** **Figure 12. Single Pulse Maximum Power Dissipation** **www.onsemi.com** **4** ## **Typical Characteristics** TJ = 25 °C unless otherwise noted. **==> picture [444 x 184] intentionally omitted <==** **----- Start of picture text -----**
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1 PDM
0.1 0.05
0.02
0.01 t 1
t2
0.01 SINGLE PULSE NOTES:
Z θ JC(t) = r(t) x R θ JC
R θ JC = 1.2 [o] C/W
Peak TJ = PDM x Z θ JC(t) + TC
Duty Cycle, D = t1 / t2
0.001
10-5 10-4 10-3 10-2 10-1 1
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
**----- End of picture text -----**
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