# Power MOSFET, P Channel, 30 V, 122 A, 3200 µohm, Power 56, Surface Mount ![Product image](https://novapart.co/image/farnell:2083283/) **URL**: https://novapart.co/products/FDMS6681Z/power-mosfet-p-channel-30-v-122-a-3200-ohm-56 **SKU**: FDMS6681Z **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €1.1700 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:P Channel; Continuous Drain Current Id:-49A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Vol; Available until stocks are exhausted ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (19-Jan-2021) | | No. Of Pins | 8Pins | | Channel Type | P Channel | | Product Range | PowerTrench Series | | Qualification | - | | Power Dissipation | 73W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | Power 56 | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 122A | | Drain Source On State Resistance | 3200µohm | | Gate Source Threshold Voltage Max | 3V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2083283/) ## FDMS6681Z ## MOSFET POWERTRENCH , P-Channel ## -30 V, -122 A, 3.2 m ## **General Description** The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection. ## **Features** - Max rDS(on) = 3.2 m at VGS = −10 V, ID = −21.1 A - Max rDS(on) = 5.0 m at VGS = −4.5 V, ID = −15.7 A - Advanced Package and Silicon Combination for Low rDS(on) - HBM ESD Protection Level of 8 kV Typical (Note 3) ## **www.onsemi.com** **==> picture [139 x 70] intentionally omitted <==** **----- Start of picture text -----**
D 5 4 G
D 6 3 S
D 7 2 S
D 8 1 S
**----- End of picture text -----**
- MSL1 Robust Package Design - RoHS Compliant |**Applications**
• Load Switch in Notebook and Server
• Notebook Battery Pack Power Management||**Pin 1**
**D**
**DDD**
**G**
**SS S**
@~>| |---|---|---| |**MOSFET MAXIMUM RATINGS**(TA= 25°C unless otherwise noted)
**Symbol**
**Parameter**
**Ratings**
**Unit**
VDS
Drain to Source Voltage
−30
V
VGS
Gate to Source Voltage
±25
V
ID
Drain Current − Continuous TC= 25°C (Note 5)
−122
A
− Continuous TC= 100°C
(Note 5)
−77
− Continuous TA= 25°C
(Note 1a)
−21.1
− Pulsed (Note 4)
−600
PD
Power dissipation TC= 25°C
73
W
Power dissipation TA= 25°C (Note 1a)
2.5
TJ,
TSTG
Operating and Storage Junction Temperature
Range
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
**Power 56 (PQFN8)**
**CASE 483AE**
**MARKING DIAGRAM**
**Bottom**
**Top**
$Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= Numeric Date Code
&K
= Lot Code
FDMS6681Z
= Specific Device Code
$Y&Z&3&K
FDMS
6681Z
~~Eat~~||| |assumed, damage may occur and reliability may be affected.||| ## **THERMAL CHARACTERISTICS** |**Symbol**|**Parameter**|**Ratings**|**Unit**| |---|---|---|---| |R JC|Thermal Resistance, Junction to Case|1.7|°C/W| |R JA|Thermal Resistance, Junction to Ambient
(Note 1a)|50|| ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2009 **May, 2019 − Rev. 3** **FDMS6681Z/D** **FDMS6681Z** ## **PACKAGE MARKING AND ORDERING INFORMATION** |**Device Marking**|**Device**|**Package**|**Shipping**�| |---|---|---|---| |FDMS6681Z|FDMS6681Z|Power 56|3000 Units/Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRIC**|**ELECTRIC**|**AL CHARACTERISTICS**(TJ= 25°C unles|s otherwise noted)||||| |---|---|---|---|---|---|---|---| |**Symbol**||**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| ||BVDSS|Drain to Source Breakdown Voltage|ID= −250�A, VGS= 0 V|−30|||V| ||�BVDSS
�TJ|Breakdown Voltage Temperature
Coefficient|ID= −250�A, referenced to 25°C||20||mV/°C| ||IDSS|Zero Gate Voltage Drain Current|VDS= −24 V, VGS= 0 V|||−1|�A| ||IGSS|Gate to Source Leakage Current|VGS=±25 V, VDS= 0 V|||±10|�A| |**ON CHARACTERISTICS**|||||||| ||VGS(th)|Gate to Source Threshold Voltage|VGS= VDS, ID= −250�A|−1|−1.7|−3|V| ||�VGS(th)
�TJ|Gate to Source Threshold Voltage
Temperature Coefficient|ID= −250�A, referenced to 25°C||−7||mV/°C| ||rDS(on)|Static Drain to Source On Resistance|VGS= −10 V, ID= −22.1 A||2.7|3.2|m�| ||||VGS= −4.5 V, ID= −15.7 A||4.0|5.0|| ||||VGS= −10 V, ID= −22.1 A,
TJ= 125°C||3.9|5.0|| ||gFS|Forward Transconductance|VDD= −10 V, ID= −22.1 A||143||S| |**DYNAMIC CHARACTERISTICS**|||||||| |Ciss||Input Capacitance|VDS= −15 V, VGS= 0 V, f = 1MHz||7803|10380|pF| |Coss||Output Capacitance|||1540|2050|| |Crss||Reverse Transfer Capacitance|||1345|2020|| |**SWITCHING CHARACTERISTICS**|||||||| |td(on)||Turn�On Delay Time|VDD= −15 V, ID= −22.1 A,
VGS= −10 V, RGEN= 6�||15|24|ns| |tr||Rise Time|||38|61|| |td(off)||Turn�Off Delay Time|||260|416|| |tf||Fall Time|||197|316|| |Qg||Total Gate Charge|VGS= 0 V to −10 V||172|241|nC| |Qg||Total Gate Charge|VGS= 0 V to −5 V||97|136|| |Qgs||Gate to Source Charge|||22||| |Qgd||Gate to Drain “Miller” Charge|||46||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |VSD||Source to Drain Diode Forward Voltage|VGS= 0 V, IS= −2.1 A (Note 2)||0.68|1.2|V| ||||VGS= 0 V, IS= −22.1 A (Note 2)||0.79|1.25|| |trr||Reverse Recovery Time|IF= −22.1 A, di/dt = 100 A/�s||44|71|ns| |Qrr||Reverse Recovery Charge|||39|63|nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **2** **FDMS6681Z** NOTES: 1. R JA is determined with the device mounted on a 1 in[2] pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R JC is guaranteed by design while R CA is determined by the user’s board design. - a) 50 ° C/W when mounted on b) 125 ° C/W when mounted on a 1 in[2] pad of 2 oz copper. a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. Pulsed ID please refer to Figure 12 SOA graph for more details. 5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal electro−mechanical application board design. **TYPICAL CHARACTERISTICS** TJ = 25 ° C unless otherwise noted **==> picture [473 x 408] intentionally omitted <==** **----- Start of picture text -----**
90 5 PULSE DURATION = 80 s
VGS = −3.5 V VGS = −3 V DUTY CYCLE = 0.5% MAX
fee
75
4
60 1 VGS = −4 V ee ee VGS = −3.5 V
A VGS = −4.5 V ee 3 a
VGS = −10 V
45 He VGS = −4.5 V VGS = −4 V ae
2
30
VGS = −3 V
15 = 1 ea VGS = −10 V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
ee ————
0 0
0 1 2 3 0 15 30 45 60 75 90
−VDS, Drain to Source Voltage [V] −ID, Drain Current [A]
Figure 1. On Region Characteristics Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
1.6 12
ID = −22.1 A PULSE DURATION = 80 s
VGS = −10 V DUTY CYCLE = 0.5% MAX
1.4
Cs. 9
ID = −22.1 A
1.2
a
6 TJ = 125 ° C
1.0
EERSZ Anne So
3
0.8 TJ = 25 ° C
et lert ty ———
0.6 TTA} 0 dL
−75 −50 −25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, Junction Temperature [ C] −VGS, Gate to Source Voltage [V]
Figure 3. Normalized On Resistance Figure 4. On−Resistance vs. Gate
vs. Junction Temperature to Source Voltage
On−Resistance
, Drain Current [A]
D
−I
Normalized Drain to Source
]
,Drain to Source
On−Resistance
On−Resistance [m
DS(on)
r
Normalized Drain to Source
**----- End of picture text -----**
**www.onsemi.com** **3** **FDMS6681Z** ## **TYPICAL CHARACTERISTICS** TJ = 25 ° C unless otherwise noted (continued) **==> picture [215 x 165] intentionally omitted <==** **----- Start of picture text -----**
90
PULSE DURATION = 80 � s
DUTY CYCLE = 0.5% MAX
75
VDS = −5 V
60
TJ = 150 ° C
45
30
TJ = 25 ° C
15 TJ = −55 ° C
0
0 1 2 3 4
−VGS, Gate to Source Voltage [V]
, Drain Current [A]
D
−I
**----- End of picture text -----**
**==> picture [228 x 167] intentionally omitted <==** **----- Start of picture text -----**
100
VGS = 0 V
10
1 TJ = 150 ° C
TJ = 25 ° C
0.1
0.01
TJ = −55 ° C
0.001
0 0.2 0.4 0.6 0.8 1.0 1.2
−VSD, Body Diode Forward Voltage [V]
, Reverse Drain Current [A]
S
−I
**----- End of picture text -----**
**Figure 5. Transfer Characteristics** **Figure 6. Source to Drain Diode Forward Voltage vs. Source Current** **==> picture [219 x 166] intentionally omitted <==** **----- Start of picture text -----**
10
ID = −22.1 A
8
VDD = −10 V
6
VDD = −15 V
4
VDD = −20 V
2
0
0 50 100 150 200
Qg, Gate Charge [nC]
, Gate to Source Voltage [V]
GS
−V
**----- End of picture text -----**
**Figure 7. Gate Charge Characteristics** **==> picture [226 x 166] intentionally omitted <==** **----- Start of picture text -----**
20000
10000
Ciss
Coss
f = 1 MHz
1000 VGS = 0 V C rss
600
0.1 1 10 30
−VDS, Drain to Source Voltage [V]
Capacitance [pF]
**----- End of picture text -----**
**Figure 8. Capacitance vs. Drain to Source Voltage** **==> picture [219 x 167] intentionally omitted <==** **----- Start of picture text -----**
100
50
TJ = 25 ° C
T J = 100 ° C
T J = 125 ° C
1
0.001 0.01 0.1 1 10 100
tAV, Time in Avalanche [ms]
, Avalanche Current [A]
AS
−I
**----- End of picture text -----**
**Figure 9. Unclamped Inductive Switching Capability** **==> picture [228 x 166] intentionally omitted <==** **----- Start of picture text -----**
140
120
100 VGS = −10 V
80
60 VGS = −4.5 V
40
20
0 R � JC = 1.7 ° C/W
25 50 75 100 125 150
TC, Case Temperature [ � C]
, Drain Current [A]
D
−I
**----- End of picture text -----**
**Figure 10. Maximum Continuous Drain Current vs. Case Temperature** **www.onsemi.com** **4** **FDMS6681Z** **TYPICAL CHARACTERISTICS** TJ = 25 ° C unless otherwise noted (continued) **==> picture [479 x 571] intentionally omitted <==** **----- Start of picture text -----**
10 [−4] 1000
VGS = 0 V 10 us
10 [−5]
100
100 us
10 [−6] TJ = 150 ° C
10 THIS AREA IS LIMITED BY rDS(on) 1 ms
10 [−7] 10 ms
TJ = 25 ° C DC
1 SINGLE PULSE
10 [−8] TJ = MAX RATED
CURVE BENT TO R � JC = 1.7 ° C/W
MEASURE DATA T C = 25 ° C
10 [−9] 0.1
0 5 10 15 20 25 30 0.1 1 10 80
VGS, Gate to Source Voltage [V] −VDS, Drain to Source Voltage [V]
Figure 11. Igss vs. Vgss Figure 12. Forward Bias Safe Operating Area
100000
SINGLE PULSE
R � JC = 1.7 ° C/W
TC = 25 ° C
10000
1000
100
10
10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 1
t, Pulse Width [s]
Figure 13. Single Pulse Maximum Power Dissipation
2
1 DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1 P DM
0.1 0.05
0.02
0.01 t1
t2
0.01 NOTES:
Z � JC (t) = r(t) × R � JC
SINGLE PULSE R � JC = 1.7 ° C/W
PEAK TJ = PDM × Z � JC (t) + TC
Duty cycle, D = t1/t2
0.001
10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 1
t, Pulse Width [s]
, Drain Current [A]
D
−I
, Gate Leakage Current [A]
Ig
, Peak Transient Power [W]
(PK)
P
r(t), Normalized Effective
Transient Thermal Resistance
**----- End of picture text -----**
**Figure 14. Transient Thermal Response Curve** POWERTRENCH is registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. **www.onsemi.com** **5** ## MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [78 x 29] intentionally omitted <==** **----- Start of picture text -----**
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE B
**----- End of picture text -----**
**==> picture [78 x 7] intentionally omitted <==** **----- Start of picture text -----**
DATE 06 JUL 2021
**----- End of picture text -----**
## **DOCUMENT NUMBER: 98AON13655G** ## **DESCRIPTION: PQFN8 5X6, 1.27P** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. ## **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. - © Semiconductor Components Industries, LLC, 2019 www.onsemi.com **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. 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