# Power MOSFET, N Channel, 60 V, 10.6 A, 9400 µohm, Power 56, Surface Mount ![Product image](https://novapart.co/image/farnell:1495182/) **URL**: https://novapart.co/products/FDMS5672/power-mosfet-n-channel-60-v-106-a-9400-ohm-56 **SKU**: FDMS5672 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €1.6400 **Stock**: 10+ ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0094ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3.2V; Power Dissip ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 8Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 2.5W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 20V | | Transistor Case Style | Power 56 | | Drain Source Voltage Vds | 60V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 10.6A | | Drain Source On State Resistance | 9400µohm | | Gate Source Threshold Voltage Max | 3.2V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1495182/) ## **Is Now Part of** **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [50 x 7] intentionally omitted <==** **----- Start of picture text -----**
March 2015
**----- End of picture text -----**
## **FDMS5672** ## **N-Channel UltraFET Trench[®] MOSFET** ## **60V, 22A, 11.5m** Ω ## **Features** Max rDS(on) = 11.5mΩ at VGS = 10V, ID = 10.6A Max rDS(on) = 16.5mΩ at VGS = 6V, ID = 8A Typ Qg = 32nC at VGS = 10V Low Miller Charge Optimized Efficiency at High Frequencies RoHS Compliant ## **General Description** UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. ## **Application** DC - DC Conversion |**G**
**S**
**S**
**S**
**Pin 1**||||||| |---|---|---|---|---|---|---| |a||**D**
**D**
**D**
**D**|**5**
**6**
**7**
**8**||**4**
**3**
**2**
**1**
**G**
**S**
**S**
**S**|| |**D**
**D**
**D**
**D**||||||| |**Power 56 (Bottom view)**||||||| |**MOSFET Maximum Ratings **TA= 25°C unless otherwise noted.|= 25°C unless otherwise noted.|||||| |**Symbol**|**Parameter**||||**Ratings**|**Units**| |VDS
Drain to Source Voltage|||||60|V| |VGS
Gate to Source Voltage|||||±20|V| |Drain Current -Continuous|TC|= 25°C||(Note 5)|65|| |ID
-Continuous
-Continuous|TC
-Continuous
TA|A= 25°C
= 100°C||= 25°C(Note 1a)
(Note 5)|10.6
39|A| |-Pulsed||||(Note 4)|176|| |EAS
Single Pulse Avalanche Energy||||(Note 3)|337|mJ| |PD
Power Dissipation
Power Dissipation|TC= 25°C
TA= 25°C|= 25°C
= 25°C||= 25°C
(Note 1a)|78
2.5|W| |TJ, TSTG
Operatingand Storage Junction Temperature Ran|e Junction Temperature Range||||-55 to +150|°C| **MOSFET Maximum Ratings** TA = 25°C unless otherwise noted. **Thermal Characteristics** RθJC Thermal Resistance, Junction to Case 1.6 °C/W ~~oe~~ RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 ~~_~~ **Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity** FDMS5672 FDMS5672 Power 56 13’’ 12mm 3000 units ~~esee ee ee~~ ©2006 Fairchild Semiconductor Corporation **1** FDMS5672 Rev.1.2 www.fairchildsemi.com |**Electrical Characteristics**TJ= 25°C unless otherwise noted.
**Symbol**
**Parameter**
**Test Conditions**
**Min.**
**Typ.**
**Max.**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= 250µA, VGS= 0V
60
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID= 250µA, referenced to 25°C
59
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 48V, VGS= 0V
1
µA
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250µA
2
3.2
4
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250µA, referenced to 25°C
-11
mV/°C
rDS(on)
Drain to Source On Resistance
VGS= 10V, ID= 10.6A
9.4
11.5
mΩ
VGS= 6V, ID= 8A
13.0
16.5
VGS= 10V, ID= 10.6A,
TJ= 125°C
15.0
18.0
gFS
Forward Transconductance
VDS= 10V, ID= 10.6A
26
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= 30V, VGS= 0V,
f = 1MHz
2100
2800
pF
Coss
Output Capacitance
375
500
pF
~~a~~
~~—fo ee~~
~~ee~~
~~ee~~
~~ee ee~~
~~ee~~
~~ee~~|**Electrical Characteristics**TJ= 25°C unless otherwise noted.
**Symbol**
**Parameter**
**Test Conditions**
**Min.**
**Typ.**
**Max.**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= 250µA, VGS= 0V
60
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID= 250µA, referenced to 25°C
59
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 48V, VGS= 0V
1
µA
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250µA
2
3.2
4
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250µA, referenced to 25°C
-11
mV/°C
rDS(on)
Drain to Source On Resistance
VGS= 10V, ID= 10.6A
9.4
11.5
mΩ
VGS= 6V, ID= 8A
13.0
16.5
VGS= 10V, ID= 10.6A,
TJ= 125°C
15.0
18.0
gFS
Forward Transconductance
VDS= 10V, ID= 10.6A
26
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= 30V, VGS= 0V,
f = 1MHz
2100
2800
pF
Coss
Output Capacitance
375
500
pF
~~a~~
~~—fo ee~~
~~ee~~
~~ee~~
~~ee ee~~
~~ee~~
~~ee~~|**Electrical Characteristics**TJ= 25°C unless otherwise noted.
**Symbol**
**Parameter**
**Test Conditions**
**Min.**
**Typ.**
**Max.**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= 250µA, VGS= 0V
60
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID= 250µA, referenced to 25°C
59
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 48V, VGS= 0V
1
µA
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250µA
2
3.2
4
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250µA, referenced to 25°C
-11
mV/°C
rDS(on)
Drain to Source On Resistance
VGS= 10V, ID= 10.6A
9.4
11.5
mΩ
VGS= 6V, ID= 8A
13.0
16.5
VGS= 10V, ID= 10.6A,
TJ= 125°C
15.0
18.0
gFS
Forward Transconductance
VDS= 10V, ID= 10.6A
26
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= 30V, VGS= 0V,
f = 1MHz
2100
2800
pF
Coss
Output Capacitance
375
500
pF
~~a~~
~~—fo ee~~
~~ee~~
~~ee~~
~~ee ee~~
~~ee~~
~~ee~~|**Electrical Characteristics**TJ= 25°C unless otherwise noted.
**Symbol**
**Parameter**
**Test Conditions**
**Min.**
**Typ.**
**Max.**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= 250µA, VGS= 0V
60
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID= 250µA, referenced to 25°C
59
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 48V, VGS= 0V
1
µA
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250µA
2
3.2
4
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250µA, referenced to 25°C
-11
mV/°C
rDS(on)
Drain to Source On Resistance
VGS= 10V, ID= 10.6A
9.4
11.5
mΩ
VGS= 6V, ID= 8A
13.0
16.5
VGS= 10V, ID= 10.6A,
TJ= 125°C
15.0
18.0
gFS
Forward Transconductance
VDS= 10V, ID= 10.6A
26
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= 30V, VGS= 0V,
f = 1MHz
2100
2800
pF
Coss
Output Capacitance
375
500
pF
~~a~~
~~—fo ee~~
~~ee~~
~~ee~~
~~ee ee~~
~~ee~~
~~ee~~|**Electrical Characteristics**TJ= 25°C unless otherwise noted.
**Symbol**
**Parameter**
**Test Conditions**
**Min.**
**Typ.**
**Max.**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= 250µA, VGS= 0V
60
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID= 250µA, referenced to 25°C
59
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 48V, VGS= 0V
1
µA
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250µA
2
3.2
4
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250µA, referenced to 25°C
-11
mV/°C
rDS(on)
Drain to Source On Resistance
VGS= 10V, ID= 10.6A
9.4
11.5
mΩ
VGS= 6V, ID= 8A
13.0
16.5
VGS= 10V, ID= 10.6A,
TJ= 125°C
15.0
18.0
gFS
Forward Transconductance
VDS= 10V, ID= 10.6A
26
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= 30V, VGS= 0V,
f = 1MHz
2100
2800
pF
Coss
Output Capacitance
375
500
pF
~~a~~
~~—fo ee~~
~~ee~~
~~ee~~
~~ee ee~~
~~ee~~
~~ee~~|**Electrical Characteristics**TJ= 25°C unless otherwise noted.
**Symbol**
**Parameter**
**Test Conditions**
**Min.**
**Typ.**
**Max.**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= 250µA, VGS= 0V
60
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID= 250µA, referenced to 25°C
59
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 48V, VGS= 0V
1
µA
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250µA
2
3.2
4
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250µA, referenced to 25°C
-11
mV/°C
rDS(on)
Drain to Source On Resistance
VGS= 10V, ID= 10.6A
9.4
11.5
mΩ
VGS= 6V, ID= 8A
13.0
16.5
VGS= 10V, ID= 10.6A,
TJ= 125°C
15.0
18.0
gFS
Forward Transconductance
VDS= 10V, ID= 10.6A
26
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= 30V, VGS= 0V,
f = 1MHz
2100
2800
pF
Coss
Output Capacitance
375
500
pF
~~a~~
~~—fo ee~~
~~ee~~
~~ee~~
~~ee ee~~
~~ee~~
~~ee~~|**Electrical Characteristics**TJ= 25°C unless otherwise noted.
**Symbol**
**Parameter**
**Test Conditions**
**Min.**
**Typ.**
**Max.**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= 250µA, VGS= 0V
60
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID= 250µA, referenced to 25°C
59
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 48V, VGS= 0V
1
µA
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250µA
2
3.2
4
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250µA, referenced to 25°C
-11
mV/°C
rDS(on)
Drain to Source On Resistance
VGS= 10V, ID= 10.6A
9.4
11.5
mΩ
VGS= 6V, ID= 8A
13.0
16.5
VGS= 10V, ID= 10.6A,
TJ= 125°C
15.0
18.0
gFS
Forward Transconductance
VDS= 10V, ID= 10.6A
26
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= 30V, VGS= 0V,
f = 1MHz
2100
2800
pF
Coss
Output Capacitance
375
500
pF
~~a~~
~~—fo ee~~
~~ee~~
~~ee~~
~~ee ee~~
~~ee~~
~~ee~~|**Electrical Characteristics**TJ= 25°C unless otherwise noted.
**Symbol**
**Parameter**
**Test Conditions**
**Min.**
**Typ.**
**Max.**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= 250µA, VGS= 0V
60
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID= 250µA, referenced to 25°C
59
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 48V, VGS= 0V
1
µA
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250µA
2
3.2
4
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250µA, referenced to 25°C
-11
mV/°C
rDS(on)
Drain to Source On Resistance
VGS= 10V, ID= 10.6A
9.4
11.5
mΩ
VGS= 6V, ID= 8A
13.0
16.5
VGS= 10V, ID= 10.6A,
TJ= 125°C
15.0
18.0
gFS
Forward Transconductance
VDS= 10V, ID= 10.6A
26
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= 30V, VGS= 0V,
f = 1MHz
2100
2800
pF
Coss
Output Capacitance
375
500
pF
~~a~~
~~—fo ee~~
~~ee~~
~~ee~~
~~ee ee~~
~~ee~~
~~ee~~|**Electrical Characteristics**TJ= 25°C unless otherwise noted.
**Symbol**
**Parameter**
**Test Conditions**
**Min.**
**Typ.**
**Max.**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= 250µA, VGS= 0V
60
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID= 250µA, referenced to 25°C
59
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 48V, VGS= 0V
1
µA
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250µA
2
3.2
4
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250µA, referenced to 25°C
-11
mV/°C
rDS(on)
Drain to Source On Resistance
VGS= 10V, ID= 10.6A
9.4
11.5
mΩ
VGS= 6V, ID= 8A
13.0
16.5
VGS= 10V, ID= 10.6A,
TJ= 125°C
15.0
18.0
gFS
Forward Transconductance
VDS= 10V, ID= 10.6A
26
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= 30V, VGS= 0V,
f = 1MHz
2100
2800
pF
Coss
Output Capacitance
375
500
pF
~~a~~
~~—fo ee~~
~~ee~~
~~ee~~
~~ee ee~~
~~ee~~
~~ee~~| |---|---|---|---|---|---|---|---|---| |Crss
Reverse Transfer Capacitance|||||120|180||pF| |Rg
Gate Resistance|f = 1MHz||||1.2|||Ω| |**Switching Characteristics**||||||||| |td(on)
Turn-On DelayTime|||||16|29||ns| |tr
Rise Time|VDD= 30V, ID= 10.6A||||17|31||ns| |td(off)
Turn-Off DelayTime|VGS= 10V, RGEN= 6Ω||||22|35||ns| |tf
Fall Time|||||8|16||ns| |Qg(TOT)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge|VGS = 0V to 10V|VDD= 30V
ID= 10.6A|||32
10
8.3|45||nC
nC
nC| |**Drain-Source Diode Characteristics**||||||||| |VSD
Source to Drain Diode Forward Voltage|VGS= 0V, IS= 10.6A(Note 2)||||0.80|1.20||V| |trr
Reverse RecoveryTime
Qrr
Reverse RecoveryCharge|IF= 10.6A, di/dt = 100A/µs||||35
42|53
63||ns
nC| ## **Notes:** 1. RθJA is determined with the device mounted on a 1in[2] pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while R θCA is determined by the user's board design. - a. 50°C/W when mounted on a b. 125°C/W when mounted on a 1 in[2 ] pad of 2 oz copper minimum pad of 2 oz copper - 3.2. Pulse Test: Pulse Width < 30Starting TJ = 25°C, L = 3mH, I 0 µASs, Duty cycle < 2.0%. = 15A, VDD = 60V, VGS = 10V. 4. Pulsed Id please refer to Fig 11 SOA graph for more details. 5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. www.fairchildsemi.com **2** FDMS5672 Rev.1.2 ## **Typical Characteristics** TJ = 25°C unless otherwise noted. **==> picture [474 x 576] intentionally omitted <==** **----- Start of picture text -----**
120 4.0
100 VVGSGS = = 8V10V VGS = 7VPULSE DURATION = 80DUTY CYCLE = 0.5%MAX µ s 3.53.0 VGS = 5V PULSE DURATION = 80DUTY CYCLE = 0.5%MAX µ s
80
VGS = 6V
2.5
60 VGS = 7V
VGS = 6V 2.0
40 VGS = 8V
1.5
VGS = 5V
20 1.0
VGS = 10V
0 0.5
0 1 2 3 4 0 20 40 60 80 100 120
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A)
Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
1.8 30
ID = 10.6A PULSE DURATION = 80 µ s
1.6 VGS = 10V DUTY CYCLE = 0.5%MAX
25
1.4
20
1.2 ID =10.6A TJ = 125 [o] C
15
1.0
TJ = 25 [o] C
10
0.8
0.6 5
-75 -50 -25 0 25 50 75 100 125 150 4 5 6 7 8 9 10
TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance Figure 4. On-Resistance vs . Gate to
vs. Junction Temperature Source Voltage
60 100
PULSE DURATION = 80 µ s VGS = 0V
DUTY CYCLE = 0.5%MAX
50
10
40
1
TJ = 150 [o] C TJ = 25 [o] C
30
TJ = 25 [o] C 0.1
20 TJ = -55 [o] C
TJ = 150 [o] C TJ = -55 [o] C 0.01
10
0 1E-3
2 3 4 5 6 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
NORMALIZED
ID, DRAIN CURRENT (A)
DRAIN TO SOURCE ON-RESISTANCE
)
Ω
m
(
, DRAIN TO
NORMALIZED
rDS(on)
SOURCE ON-RESISTANCE
DRAIN TO SOURCE ON-RESISTANCE
, DRAIN CURRENT (A)
ID
, REVERSE DRAIN CURRENT (A)
IS
**----- End of picture text -----**
www.fairchildsemi.com **3** FDMS5672 Rev.1.2 **==> picture [506 x 417] intentionally omitted <==** **----- Start of picture text -----**
Typical Characteristics TJ = 25°C unless otherwise noted.
10 4000
ID = 10.6A VDD = 20V
8 Ciss
VDD = 30V 1000
6
VDD = 40V
Coss
4
2 100 f = 1MHz Crss
VGS = 0V
0 one 40 ee
0 5 10 15 20 25 30 35 0.1 1 10 60
Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs . Drain
to Source Voltage
20 70on | | | |
10
fof
Ww
TJ = 25 [o] C e 40 Ph.
S| verey]
TJ = 125 [o] C :° SAT>
es ee ee i
10 1
1
0.01 0.1 1 10 100 500 25 50 75 100 125 150
tAV, TIME IN AVALANCHE(ms) T.. GASE TEMPERATURE ("C)
Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain
Switching Capability Current vs. Case Temperature
CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE(V)
GS
V
FDMS5672 N-Channel UltraFET Trench
®
MOSFET
, AVALANCHE CURRENT(A)
IAS
**----- End of picture text -----**
**Figure 11. Forward Bias Safe Operating Area** **Figure 12. Single Pulse Maximum Power Dissipation** www.fairchildsemi.com **4** FDMS5672 Rev.1.2 **Typical Characteristics** TJ = 25°C unless otherwise noted. **==> picture [207 x 9] intentionally omitted <==** **----- Start of picture text -----**
Figure 13. Transient Thermal Response Curve
**----- End of picture text -----**
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