# Power MOSFET, N Channel, 80 V, 8.8 A, 0.0165 ohm, Power 56, Surface Mount

![Product image](https://novapart.co/image/farnell:1495180/)

**URL**: https://novapart.co/products/FDMS3572/power-mosfet-n-channel-80-v-88-a-00165-ohm-56
**SKU**: FDMS3572
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.1100
**Stock**: 1000+
**Lead Time**: 162 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:8.8A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power Dissipa

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | Power 56 |
| Drain Source Voltage Vds | 80V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 8.8A |
| Drain Source On State Resistance | 0.0165ohm |
| Gate Source Threshold Voltage Max | 3.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1495180/)

## **Is Now Part of** 

**To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

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February 2007<br>tm<br>**----- End of picture text -----**<br>


## **FDMS3572 N-Channel UltraFET Trench[®] MOSFET 80V, 22A, 16.5m** Ω 

## **General Description** 

## **Features** 

Max rDS(on) = 16.5mΩ at VGS = 10V, ID = 8.8A Max rDS(on) = 24mΩ at VGS = 6V, ID = 8.4A Typ Qg = 28nC at VGS = 10V Low Miller Charge Optimized efficiency at high frequencies RoHS Compliant 

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. 

## **Application** 

DC - DC Conversion 

**==> picture [152 x 112] intentionally omitted <==**

**----- Start of picture text -----**<br>
Pin 1 S S S G<br>BB D D D D<br>Power 56  (Bottom view)<br>**----- End of picture text -----**<br>


|**Pin 1**|**Power 56  (Bottom view)**<br>**D**<br>**D**<br>**D**<br>**D**<br>**5**<br>**6**<br>**7**<br>**8**<br>**D**<br>**D**<br>**D**<br>**D**<br>BB<br>=a|**Power 56  (Bottom view)**<br>**D**<br>**D**<br>**D**<br>**D**<br>**5**<br>**6**<br>**7**<br>**8**<br>**D**<br>**D**<br>**D**<br>**D**<br>BB<br>=a||**4**<br>**3**<br>**2**<br>**1**<br>**G**<br>**S**<br>**S**<br>**S**<br>=|||
|---|---|---|---|---|---|---|
|**MOSFET Maximum Ratings**|**MOSFET Maximum Ratings  **TA= 25°C unless otherwise noted||||||
|**Symbol**|**Parameter**|||**Ratings**||**Units**|
|VDS|Drain to Source Voltage|||80||V|
|VGS|Gate to Source Voltage|||±20||V|
||Drain Current   -Continuous(Package limited)  TC = 25°C|||22|||
|ID|-Continuous(Silicon limited)  TC = 25°C<br>-Continuous                                        TA= 25°C|= 25°C(Note 1a)||48<br>8.8||A|
||-Pulsed|||50|||
|PD|Power Dissipation                                                   TC= 25°C<br>Power Dissipation                                                        TA= 25°C|= 25°C(Note 1a)||78<br>2.5||W|
|TJ, TSTG|Operatingand Storage Junction Temperature Range|||-55 to +150||°C|
|**Thermal Characteristics**|||||||
|RθJC<br>Thermal Resistance, Junction to Case<br>1.6<br>°C/W<br>RθJA<br>Thermal Resistance, Junction to Ambient(Note 1a)<br>50<br>~~cei~~|||||||
|**Package Marking and Ordering Information**|||||||
|**Device Marking**<br>**Device**<br>**Package**<br>FDMS3572<br>FDMS3572<br>Power 56<br>~~[_~~||**Reel Size**<br>13’’||**Tape Width**<br>12mm|**Quantity**<br>3000 units||



**1** 

©2007 Fairchild Semiconductor Corporation FDMS3572 Rev.C1 

www.fairchildsemi.com 

## **Electrical Characteristics** TJ = 25°C unless otherwise noted 

|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= 250µA, VGS= 0V<br>80<br>V<br>∆BVDSS<br>∆TJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250µA, referenced to 25°C<br>76<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 64V,   VGS= 0V<br>1<br>µA<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±20V, VDS= 0V<br>±100<br>nA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= 250µA<br>2<br>3.2<br>4<br>V<br>∆VGS(th)<br>∆TJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= 250µA, referenced to 25°C<br>-11<br>mV/°C<br>rDS(on)<br>Drain to Source On Resistance<br>VGS= 10V,  ID= 8.8A<br>13.5<br>16.5<br>mΩ<br>VGS= 6V,   ID= 8.4A<br>18.3<br>24<br>VGS= 10V,  ID= 8.8A, TJ= 125°C<br>22.2<br>29<br>gFS<br>Forward Transconductance<br>VDS= 10V,  ID= 8.8A<br>23<br>S<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= 40V, VGS= 0V,<br>f = 1MHz<br>1870<br>2490<br>pF<br>Coss<br>Output Capacitance<br>275<br>365<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>78<br>120<br>pF<br>~~aGD~~<br>~~—]~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~OO~~|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= 250µA, VGS= 0V<br>80<br>V<br>∆BVDSS<br>∆TJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250µA, referenced to 25°C<br>76<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 64V,   VGS= 0V<br>1<br>µA<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±20V, VDS= 0V<br>±100<br>nA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= 250µA<br>2<br>3.2<br>4<br>V<br>∆VGS(th)<br>∆TJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= 250µA, referenced to 25°C<br>-11<br>mV/°C<br>rDS(on)<br>Drain to Source On Resistance<br>VGS= 10V,  ID= 8.8A<br>13.5<br>16.5<br>mΩ<br>VGS= 6V,   ID= 8.4A<br>18.3<br>24<br>VGS= 10V,  ID= 8.8A, TJ= 125°C<br>22.2<br>29<br>gFS<br>Forward Transconductance<br>VDS= 10V,  ID= 8.8A<br>23<br>S<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= 40V, VGS= 0V,<br>f = 1MHz<br>1870<br>2490<br>pF<br>Coss<br>Output Capacitance<br>275<br>365<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>78<br>120<br>pF<br>~~aGD~~<br>~~—]~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~OO~~|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= 250µA, VGS= 0V<br>80<br>V<br>∆BVDSS<br>∆TJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250µA, referenced to 25°C<br>76<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 64V,   VGS= 0V<br>1<br>µA<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±20V, VDS= 0V<br>±100<br>nA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= 250µA<br>2<br>3.2<br>4<br>V<br>∆VGS(th)<br>∆TJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= 250µA, referenced to 25°C<br>-11<br>mV/°C<br>rDS(on)<br>Drain to Source On Resistance<br>VGS= 10V,  ID= 8.8A<br>13.5<br>16.5<br>mΩ<br>VGS= 6V,   ID= 8.4A<br>18.3<br>24<br>VGS= 10V,  ID= 8.8A, TJ= 125°C<br>22.2<br>29<br>gFS<br>Forward Transconductance<br>VDS= 10V,  ID= 8.8A<br>23<br>S<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= 40V, VGS= 0V,<br>f = 1MHz<br>1870<br>2490<br>pF<br>Coss<br>Output Capacitance<br>275<br>365<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>78<br>120<br>pF<br>~~aGD~~<br>~~—]~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~OO~~|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= 250µA, VGS= 0V<br>80<br>V<br>∆BVDSS<br>∆TJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250µA, referenced to 25°C<br>76<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 64V,   VGS= 0V<br>1<br>µA<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±20V, VDS= 0V<br>±100<br>nA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= 250µA<br>2<br>3.2<br>4<br>V<br>∆VGS(th)<br>∆TJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= 250µA, referenced to 25°C<br>-11<br>mV/°C<br>rDS(on)<br>Drain to Source On Resistance<br>VGS= 10V,  ID= 8.8A<br>13.5<br>16.5<br>mΩ<br>VGS= 6V,   ID= 8.4A<br>18.3<br>24<br>VGS= 10V,  ID= 8.8A, TJ= 125°C<br>22.2<br>29<br>gFS<br>Forward Transconductance<br>VDS= 10V,  ID= 8.8A<br>23<br>S<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= 40V, VGS= 0V,<br>f = 1MHz<br>1870<br>2490<br>pF<br>Coss<br>Output Capacitance<br>275<br>365<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>78<br>120<br>pF<br>~~aGD~~<br>~~—]~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~OO~~|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= 250µA, VGS= 0V<br>80<br>V<br>∆BVDSS<br>∆TJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250µA, referenced to 25°C<br>76<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 64V,   VGS= 0V<br>1<br>µA<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±20V, VDS= 0V<br>±100<br>nA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= 250µA<br>2<br>3.2<br>4<br>V<br>∆VGS(th)<br>∆TJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= 250µA, referenced to 25°C<br>-11<br>mV/°C<br>rDS(on)<br>Drain to Source On Resistance<br>VGS= 10V,  ID= 8.8A<br>13.5<br>16.5<br>mΩ<br>VGS= 6V,   ID= 8.4A<br>18.3<br>24<br>VGS= 10V,  ID= 8.8A, TJ= 125°C<br>22.2<br>29<br>gFS<br>Forward Transconductance<br>VDS= 10V,  ID= 8.8A<br>23<br>S<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= 40V, VGS= 0V,<br>f = 1MHz<br>1870<br>2490<br>pF<br>Coss<br>Output Capacitance<br>275<br>365<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>78<br>120<br>pF<br>~~aGD~~<br>~~—]~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~OO~~|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= 250µA, VGS= 0V<br>80<br>V<br>∆BVDSS<br>∆TJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250µA, referenced to 25°C<br>76<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 64V,   VGS= 0V<br>1<br>µA<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±20V, VDS= 0V<br>±100<br>nA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= 250µA<br>2<br>3.2<br>4<br>V<br>∆VGS(th)<br>∆TJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= 250µA, referenced to 25°C<br>-11<br>mV/°C<br>rDS(on)<br>Drain to Source On Resistance<br>VGS= 10V,  ID= 8.8A<br>13.5<br>16.5<br>mΩ<br>VGS= 6V,   ID= 8.4A<br>18.3<br>24<br>VGS= 10V,  ID= 8.8A, TJ= 125°C<br>22.2<br>29<br>gFS<br>Forward Transconductance<br>VDS= 10V,  ID= 8.8A<br>23<br>S<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= 40V, VGS= 0V,<br>f = 1MHz<br>1870<br>2490<br>pF<br>Coss<br>Output Capacitance<br>275<br>365<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>78<br>120<br>pF<br>~~aGD~~<br>~~—]~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~OO~~|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= 250µA, VGS= 0V<br>80<br>V<br>∆BVDSS<br>∆TJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250µA, referenced to 25°C<br>76<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 64V,   VGS= 0V<br>1<br>µA<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±20V, VDS= 0V<br>±100<br>nA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= 250µA<br>2<br>3.2<br>4<br>V<br>∆VGS(th)<br>∆TJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= 250µA, referenced to 25°C<br>-11<br>mV/°C<br>rDS(on)<br>Drain to Source On Resistance<br>VGS= 10V,  ID= 8.8A<br>13.5<br>16.5<br>mΩ<br>VGS= 6V,   ID= 8.4A<br>18.3<br>24<br>VGS= 10V,  ID= 8.8A, TJ= 125°C<br>22.2<br>29<br>gFS<br>Forward Transconductance<br>VDS= 10V,  ID= 8.8A<br>23<br>S<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= 40V, VGS= 0V,<br>f = 1MHz<br>1870<br>2490<br>pF<br>Coss<br>Output Capacitance<br>275<br>365<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>78<br>120<br>pF<br>~~aGD~~<br>~~—]~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~OO~~|
|---|---|---|---|---|---|---|
|Rg<br>Gate Resistance|f = 1MHz||1.3|||Ω|
|**Switching Characteristics**|||||||
|td(on)<br>Turn-On DelayTime<br>tr<br>Rise Time<br>td(off)<br>Turn-Off DelayTime|VDD= 40V, ID= 8.8A<br>VGS= 10V, RGEN= 6Ω||11<br>13<br>24|20<br>24<br>39||ns<br>ns<br>ns|
|tf<br>Fall Time|||12|22||ns|
|Qg(TOT)<br>Total Gate Charge at 10V|VGS= 0V to 10V VDD= 40V||28|40||nC|
|Qgs<br>Gate to Source Gate Charge|ID= 8.8A||9|||nC|
|Qgd<br>Gate to Drain “Miller” Charge|||8|||nC|
|**Drain-Source Diode Characteristics**|||||||
|VSD<br>Source to Drain Diode  Forward Voltage|VGS = 0V, IS = 8.8A(Note 2)||0.8|1.2||V|
|trr<br>Reverse RecoveryTime<br>Qrr<br>Reverse RecoveryCharge|IF= 8.8A, di/dt = 100A/µs||43<br>71|65<br>107||ns<br>nC|



**Notes:** 

- **1:** RθJA is determined with the device mounted on a 1in[2] pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while R θCA is determined by the user's board design. 

a. 50°C/W when mounted  on b. 125°C/W when mounted on  a a 1 in[2 ] pad of  2 oz  copper minimum pad of 2 oz copper 

- **2:** Pulse Test: Pulse Width < 30 0 µs, Duty cycle < 2.0%. 

www.fairchildsemi.com 

**2** 

FDMS3572 Rev.C1 

## **Typical Characteristics** TJ = 25°C unless otherwise noted 

**==> picture [469 x 576] intentionally omitted <==**

**----- Start of picture text -----**<br>
60 3.5<br>VGS = 10V PULSE DURATION = 80 µ s PULSE DURATION = 80 µ s<br>DUTY CYCLE = 0.5%MAX DUTY CYCLE = 0.5%MAX<br>50 3.0<br>VGS = 8V<br>40 2.5 VGS = 5V<br>VGS =  6V<br>30 2.0 VGS = 6V<br>20 1.5 VGS =  8V<br>VGS = 5V<br>10 1.0<br>VGS =  10V<br>0 0.5<br>0 1 2 3 4 0 10 20 30 40 50 60<br>VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A)<br>Figure 1.  On Region Characteristics Figure 2.  Normalized On-Resistance<br>vs Drain Current and Gate Voltage<br>2.0 50<br> ID = 8.8A PULSE DURATION = 80 µ s<br>1.8 VGS = 10V DUTY CYCLE = 0.5%MAX<br>40<br>1.6<br>1.4 TJ = 150 [o] C<br>30<br>1.2 ID = 9A<br>1.0<br>20 TJ = 25 [o] C<br>0.8<br>0.6 10<br>-75 -50 -25 0 25 50 75 100 125 150 4 5 6 7 8 9 10<br>TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3.  Normalized  On  Resistance                                         Figure 4.   On-Resistance vs  Gate to<br>vs Junction Temperature Source Voltage<br>50 100<br>PULSE DURATION = 80 µ s VGS = 0V<br>DUTY CYCLE = 0.5%MAX<br>40 10<br>30 1<br>TJ = 25 [o] C<br>TJ = 150 [o] C<br>20 0.1<br>TJ = 150 [o] C TJ = 25 [o] C<br>10 0.01 TJ = -55 [o] C<br>TJ = -55 [o] C<br>0 1E-3<br>2 3 4 5 6 7 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 5.  Transfer Characteristics Figure 6.    Source to Drain  Diode<br>Forward Voltage vs Source Current<br>NORMALIZED<br>, DRAIN CURRENT (A)<br>ID<br>DRAIN TO SOURCE ON-RESISTANCE<br>)<br>Ω<br>m<br>(<br>, DRAIN TO<br>NORMALIZED<br>rDS(on)<br>SOURCE ON-RESISTANCE<br> DRAIN TO SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)<br>ID<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

**3** 

FDMS3572 Rev.C1 

## **Typical Characteristics** TJ = 25°C unless otherwise noted 

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10 4000<br>VDD = 30V Ciss<br>8<br>VDD = 40V<br>VDD = 50V 1000<br>6 Coss<br>4<br>2 f = 1MHz Crss<br>100<br>VGS = 0V<br>0 50<br>0 10 20 30 0.1 1 10 100<br>Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7.  Gate Charge Characteristics Figure 8.  Capacitance vs Drain<br>to Source Voltage<br>10 50<br>9<br>8<br>7<br>6 40<br>5 VGS = 10V<br>4 TJ = 25 [o] C 30<br>VGS = 6V<br>3<br>TJ = 125 [o] C 20<br>2<br>Limited by Package<br>10<br>R θ JC = 1.6oC/W<br>1 0<br>0.01 0.1 1 10 100 25 50 75 100 125 150<br>tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE (oC)<br>Figure 9. Unclamped Inductive                                  Figure 10.  Maximum Continuous Drain<br>Switching Capability Current  vs Case Temperature<br>50 2000<br>100us 1000 FOR TEMPERATURES<br>10 1ms ABOVE 25 [o] C DERATE PEAK<br>VGS = 10V CURRENT AS FOLLOWS:<br>1 10ms 100 I = I25  150 --------------------- 125 – T A -<br>100ms<br>0.1 OPERATION IN THIS  TA = 25 [o] C<br>AREA MAY BE  1s 10<br>LIMITED BY r<br>DS(on) 10s<br>0.01 SINGLE PULSE DC<br>TJ = MAX RATED 1 SINGLE PULSE<br>TA = 25 [O] C<br>1E-3 0.3<br>0.1 1 10 100 300 10-3 10-2 10-1 100 101 102 103<br>VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s)<br>Figure 11.  Forward Bias Safe                                      Figure 12.   Single  Pulse Maximum<br>Operating Area  Power  Dissipation<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLTAGE(V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>, AVALANCHE CURRENT(A)<br>IAS<br>, DRAIN CURRENT (A)<br>ID<br>, PEAK TRANSIENT POWER (W)P)(PK<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

**4** 

FDMS3572 Rev.C1 

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Typical Characteristics  TJ = 25°C unless otherwise noted<br>2<br>1 DUTY CYCLE-DESCENDING ORDER<br>D = 0.5<br>      0.2<br>0.1       0.1<br>      0.05<br>      0.02<br>0.01       0.01 PDM<br>t1<br>1E-3 t2<br>NOTES:<br>DUTY FACTOR: D = t1/t2<br>SINGLE PULSE PEAK TJ = PDM x Z θJA  x R θJA  + TA<br>1E-4<br>10-3 10-2 10-1 100 101 102 103<br>t, RECTANGULAR PULSE DURATION (s)<br>Figure 13.  Transient Thermal Response Curve<br>IMPEDANCE, ZJA θ<br>NORMALIZED THERMAL<br>**----- End of picture text -----**<br>


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www.fairchildsemi.com 

**6** 

FDMS3572 Rev.C1 

## **TRADEMARKS** 

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 

|ACEx™<br>ActiveArray™<br>Bottomless™<br>Build it Now™<br>CoolFET™<br>_CROSSVOLT_™<br>DOME™<br>EcoSPARK™<br>E2CMOS™<br>EnSigna™<br>FACT®<br>FAST®<br>FASTr™<br>FPS™<br>FRFET™<br>FACT Quiet Series™<br>GlobalOptoisolator™<br>GTO™<br>HiSeC™<br>I2C™<br>_i-Lo_™<br>ImpliedDisconnect™<br>IntelliMAX™<br>ISOPLANAR™<br>LittleFET™<br>MICROCOUPLER™<br>MicroFET™<br>MicroPak™<br>MICROWIRE™<br>MSX™<br>MSXPro™<br>Across the board. Around the world.™<br>The Power Franchise®<br>Programmable Active Droop™|OCX™<br>OCXPro™<br>OPTOLOGIC®<br>OPTOPLANAR™<br>PACMAN™<br>POP™<br>Power247™<br>PowerEdge™<br>PowerSaver™<br>PowerTrench®<br>QFET®<br>QS™<br>QT Optoelectronics™<br>Quiet Series™<br>RapidConfigure™<br>RapidConnect™<br>µSerDes™<br>ScalarPump™|SILENT SWITCHER®<br>SMART START™<br>SPM™<br>Stealth™<br>SuperFET™<br>SuperSOT™-3<br>SuperSOT™-6<br>SuperSOT™-8<br>SyncFET™<br>TCM™<br>TinyBoost™<br>TinyBuck™<br>TinyPWM™<br>TinyPower™<br>TinyLogic®<br>TINYOPTO™<br>TruTranslation™<br>UHC®|UniFET™<br>VCX™<br>Wire™|
|---|---|---|---|



## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 

## **LIFE SUPPORT POLICY** 

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 

As used herein: 

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 

## **PRODUCT STATUS DEFINITIONS** 

**Definition of Terms** 

|**PRODUCT STATUS DEFINITIONS**<br>**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative or In<br>Design|This datasheet contains the design specifications for<br>product development. Specifications may change in<br>any manner without notice.|
|Preliminary|First Production|This datasheet contains preliminary data, and<br>supplementary data will be published at a later date.<br>Fairchild Semiconductor reserves the right to make<br>changes at any time without notice in order to improve<br>design.|
|No Identification Needed|Full Production|This datasheet contains final specifications. Fairchild<br>Semiconductor reserves the right to make changes at<br>any time without notice in order to improve design.|
|Obsolete|Not In Production|This datasheet contains specifications on a product<br>that has been discontinued by Fairchild semiconductor.<br>The datasheet is printed for reference information only.|



Rev. I22 

FDMS3572 Rev. C1 

www.fairchildsemi.com 

**7** 

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