# Power MOSFET, N Channel, 150 V, 27 A, 0.036 ohm, Power 56, Surface Mount ![Product image](https://novapart.co/image/farnell:2083277/) **URL**: https://novapart.co/products/FDMS2572/power-mosfet-n-channel-150-v-27-a-0036-ohm-56 **SKU**: FDMS2572 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €1.0200 **Stock**: 10+ ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Pow ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 8Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 78W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | Power 56 | | Drain Source Voltage Vds | 150V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 27A | | Drain Source On State Resistance | 0.036ohm | | Gate Source Threshold Voltage Max | 3V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2083277/) ## **Is Now Part of** **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **December 2012** ## ## **N-Channel UltraFET Trench[®] MOSFET 150V, 27A, 47m** Ω ## **Features** Max rDS(on) = 47mΩ at VGS = 10V, ID = 4.5A Max rDS(on) = 53mΩ at VGS = 6V, ID = 4.5A Low Miller Charge Optimized efficiency at high frequencies UIS Capability (Single pulse and Repetitive pulse) RoHS Compliant ## **General Description** UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. ## **Application** Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier **==> picture [361 x 112] intentionally omitted <==** **----- Start of picture text -----**
Pin 1 S S S G
DD =s 56 | 43 SG
D 7 2 S
D D D D D | 8 | 1 S
B Power 56 (Bottom view) ie
**----- End of picture text -----**
**MOSFET Maximum Ratings** TA = 25°C unless otherwise noted |**Symbol**
**Parameter**||||**Ratings**|**Ratings**||**Units**| |---|---|---|---|---|---|---|---| |VDS
Drain to Source Voltage|||||150||V| |VGS
Gate to Source Voltage|||||±20||V| |Drain Current -Continuous(Package limited)TC = 25°C|||||27||| |ID
-Continuous(Silicon limited)TC = 25°C
-Continuous TA= 25°C||= 25°C(Note 1a)|||27
4.5||A| |-Pulsed|||||30||| |EAS
Single Pulse Avalanche Energy||(Note 3)|||150||mJ| |PD
Power Dissipation TC= 25°C
Power Dissipation TA= 25°C||= 25°C(Note 1a)|||78
2.5||W| |TJ, TSTG
Operatingand Storage Junction Temperature Range||||-55 to +150|-55 to +150||°C| |**Thermal Characteristics**|||||||| |**Package Marking and Ordering Information**
RθJC
Thermal Resistance, Junction to Case
1.6
°C/W
RθJA
Thermal Resistance, Junction to Ambient(Note 1a)
50
~~ee~~
~~ae~~|||||||| |**Device Marking**
**Device**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
FDMS2572
FDMS2572
Power 56
13’’
12mm
3000 units
~~a~~|||||||| ©2012 Fairchild Semiconductor Corporation **1** FDMS2572 Rev.C4 www.fairchildsemi.com **Electrical Characteristics** TJ = 25°C unless otherwise noted |**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= 250μA, VGS= 0V
150
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= 250μA, referenced to 25°C
180
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 120V, VGS= 0V
1
μA
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250μA
2
3
4
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250μA, referenced to 25°C
-9.8
mV/°C
rDS(on)
Drain to Source On Resistance
VGS= 10V, ID= 4.5A
36
47
mΩ
VGS= 6V, ID= 4.5A
39
53
VGS= 10V, ID= 4.5A, TJ= 125°C
69
103
gFS
Forward Transconductance
VDS= 10V, ID= 4.5A
14
S
(Note 2)
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= 75V, VGS= 0V,
f = 1MHz
1960
2610
pF
Coss
Output Capacitance
130
175
pF
Crss
Reverse Transfer Capacitance
30
45
pF
~~a~~
~~a~~
~~ee~~
~~ee~~
~~ee~~
~~a~~
~~DG DG~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= 250μA, VGS= 0V
150
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= 250μA, referenced to 25°C
180
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 120V, VGS= 0V
1
μA
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250μA
2
3
4
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250μA, referenced to 25°C
-9.8
mV/°C
rDS(on)
Drain to Source On Resistance
VGS= 10V, ID= 4.5A
36
47
mΩ
VGS= 6V, ID= 4.5A
39
53
VGS= 10V, ID= 4.5A, TJ= 125°C
69
103
gFS
Forward Transconductance
VDS= 10V, ID= 4.5A
14
S
(Note 2)
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= 75V, VGS= 0V,
f = 1MHz
1960
2610
pF
Coss
Output Capacitance
130
175
pF
Crss
Reverse Transfer Capacitance
30
45
pF
~~a~~
~~a~~
~~ee~~
~~ee~~
~~ee~~
~~a~~
~~DG DG~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= 250μA, VGS= 0V
150
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= 250μA, referenced to 25°C
180
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 120V, VGS= 0V
1
μA
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250μA
2
3
4
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250μA, referenced to 25°C
-9.8
mV/°C
rDS(on)
Drain to Source On Resistance
VGS= 10V, ID= 4.5A
36
47
mΩ
VGS= 6V, ID= 4.5A
39
53
VGS= 10V, ID= 4.5A, TJ= 125°C
69
103
gFS
Forward Transconductance
VDS= 10V, ID= 4.5A
14
S
(Note 2)
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= 75V, VGS= 0V,
f = 1MHz
1960
2610
pF
Coss
Output Capacitance
130
175
pF
Crss
Reverse Transfer Capacitance
30
45
pF
~~a~~
~~a~~
~~ee~~
~~ee~~
~~ee~~
~~a~~
~~DG DG~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= 250μA, VGS= 0V
150
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= 250μA, referenced to 25°C
180
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 120V, VGS= 0V
1
μA
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250μA
2
3
4
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250μA, referenced to 25°C
-9.8
mV/°C
rDS(on)
Drain to Source On Resistance
VGS= 10V, ID= 4.5A
36
47
mΩ
VGS= 6V, ID= 4.5A
39
53
VGS= 10V, ID= 4.5A, TJ= 125°C
69
103
gFS
Forward Transconductance
VDS= 10V, ID= 4.5A
14
S
(Note 2)
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= 75V, VGS= 0V,
f = 1MHz
1960
2610
pF
Coss
Output Capacitance
130
175
pF
Crss
Reverse Transfer Capacitance
30
45
pF
~~a~~
~~a~~
~~ee~~
~~ee~~
~~ee~~
~~a~~
~~DG DG~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= 250μA, VGS= 0V
150
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= 250μA, referenced to 25°C
180
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 120V, VGS= 0V
1
μA
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250μA
2
3
4
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250μA, referenced to 25°C
-9.8
mV/°C
rDS(on)
Drain to Source On Resistance
VGS= 10V, ID= 4.5A
36
47
mΩ
VGS= 6V, ID= 4.5A
39
53
VGS= 10V, ID= 4.5A, TJ= 125°C
69
103
gFS
Forward Transconductance
VDS= 10V, ID= 4.5A
14
S
(Note 2)
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= 75V, VGS= 0V,
f = 1MHz
1960
2610
pF
Coss
Output Capacitance
130
175
pF
Crss
Reverse Transfer Capacitance
30
45
pF
~~a~~
~~a~~
~~ee~~
~~ee~~
~~ee~~
~~a~~
~~DG DG~~| |---|---|---|---|---| |Rg
Gate Resistance|f = 1MHz
0.1
1.3
2.6||Ω|| |**Switching Characteristics**||||| |td(on)
Turn-On DelayTime
tr
Rise Time
td(off)
Turn-Off DelayTime|VDD= 75V, ID= 1.0A
VGS= 10V, RGEN= 6Ω
11
20
8
16
38
61||ns
ns
ns|| |tf
Fall Time|31
50||ns|| |Qg(TOT)
Total Gate Charge at 10V|VGS= 0V to 10V VDD= 75V
31
43||nC|| |Qgs
Gate to Source Gate Charge|ID= 4.5A
9||nC|| |Qgd
Gate to Drain “Miller” Charge|7||nC|| |**Drain-Source Diode Characteristics**||||| |VSD
Source to Drain Diode Forward Voltage|VGS = 0V, IS = 2.2A(Note 2)
0.7
1.0||V|| |trr
Reverse RecoveryTime
Qrr
Reverse RecoveryCharge|IF= 4.5A, di/dt = 100A/μs
67
101
130
195||ns
nC|| **Notes:** - **1:** RθJA is determined with the device mounted on a 1in[2] pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a.50°C/W when mounted on b. 125°C/W when mounted on a a 1 in[2 ] pad of 2 oz copper minimum pad of 2 oz copper - **2:** Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. - **3:** EAS of 150 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 10 A, VDD = 150 V, VGS = 10 V. www.fairchildsemi.com **2** FDMS2572 Rev.C4 ## **Typical Characteristics** TJ = 25°C unless otherwise noted **==> picture [469 x 576] intentionally omitted <==** **----- Start of picture text -----**
40 1.8
35 VGS = 10V VGS =4.5V PULSE DURATION = 300DUTY CYCLE = 2.0%MAX μ s
VGS = 6V PULSE DURATION = 300 μ s 1.6
30 DUTY CYCLE = 2.0%MAX
VGS =5V VGS =5.5V
25 VGS = 5.5V 1.4
20
15 VGS = 5V 1.2 VGS = 6V
10
1.0 V GS = 10V
5 V GS = 4.5V
0 0.8
0 1 2 3 4 5 0 8 16 24 32 40
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.4 110
2.2 ID = 4.5A 100 ID = 4.5A PULSE DURATION =300 μ s
2.0 VGS = 10V DUTY CYCLE = 2.0%MAX
90
1.8
1.6 80 T J = 150 [o] C
1.4
70
1.2
1.0 60
0.8 50
0.6 40 TJ = 25 [o] C
0.4
0.2 30
-75 -50 -25 0 25 50 75 100 125 150 3 4 5 6 7 8 9 10
TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On - Resistance Figure 4. On-Resistance vs Gate to
vs Junction Temperature Source Voltage
60 60
PULSE DURATION = 300 μ s VGS = 0V
50 DUTY CYCLE = 2.0%MAX 10
40 1 TJ = 125 [o] C
30 TJ = 125 [o] C 0.1 TJ = 25 [o] C
20 0.01
TJ = 25 [o] C
10 1E-3 TJ = -55 [o] C
TJ =-55 [o] C
0 1E-4
1 2 3 4 5 6 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
NORMALIZED
, DRAIN CURRENT (A)
ID
DRAIN TO SOURCE ON-RESISTANCE
)
mOHM
(
, DRAIN TO
NORMALIZED
rDS(on)
SOURCE ON-RESISTANCE
DRAIN TO SOURCE ON-RESISTANCE
, DRAIN CURRENT (A)
ID
, REVERSE DRAIN CURRENT (A)
IS
**----- End of picture text -----**
www.fairchildsemi.com **3** FDMS2572 Rev.C4 **Typical Characteristics** TJ = 25°C unless otherwise noted **==> picture [469 x 575] intentionally omitted <==** **----- Start of picture text -----**
10 3000
ID = 4.5A
8 VDD =50V 1000 Ciss
6 VDD = 75V
4 VDD = 100V 100 Coss
2
f = 1MHz Crss
VGS = 0V
0 10
0 7 14 21 28 35 0.1 1 10 100
Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain
to Source Voltage
6 6
5
5
4
VGS = 10V
TJ = 25 [o] C 4
3
3
2 VGS = 6V
2
TJ = 125 [o] C
1 o
R θ JA = 50 C/W
1 0
0.01 0.1 1 10 50 25 50 75 100 125 150
tAV, TIME IN AVALANCHE(ms) TA, AMBIENT TEMPERATURE ( [o] C)
Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain
Switching Capability Current vs Ambient Temperature
60 2000
10 100us 1000 VGS = 10V FOR TEMPERATURES
1ms ABOVE 25 [o] C DERATE PEAK
CURRENT AS FOLLOWS:
1 10ms 100 I = I25 150 ---------------------- 125 – TA -
100ms
0.1 TA = 25 [o] C
OPERATION IN THIS 1s 10
AREA MAY BE
0.01 LIMITED BY r DS(on) SINGLE PULSE 10s
TJ = MAX RATED DC SINGLE PULSE
TA = 25 [O] C 1
1E-3 0.5
0.1 1 10 100 600 10-3 10-2 10-1 100 101 102 103
VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation
CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE(V)
GS
V
, DRAIN CURRENT (A)
, AVALANCHE CURRENT(A) ID
IAS
, DRAIN CURRENT (A)
D
I
, PEAK TRANSIENT POWER (W)P)(PK
**----- End of picture text -----**
www.fairchildsemi.com **4** FDMS2572 Rev.C4 **==> picture [469 x 208] intentionally omitted <==** **----- Start of picture text -----**
Typical Characteristics TJ = 25°C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1 0.1
0.05
0.02 PDM
0.01
0.01 t1
t2
NOTES:
DUTY FACTOR: D = t 1 /t 2
1E-3 SINGLE PULSE PEAK T J = P DM x Z θJA x R θJA + T A
5E-4
10-3 10-2 10-1 100 101 102 103
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
IMPEDANCE, ZJA θ
NORMALIZED THERMAL
**----- End of picture text -----**
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FDMS2572 Rev.C4
**----- End of picture text -----**
**==> picture [72 x 7] intentionally omitted <==** **----- Start of picture text -----**
www.fairchildsemi.com
**----- End of picture text -----**
**5** **==> picture [15 x 283] intentionally omitted <==** **----- Start of picture text -----**
FDMS2572 N-Channel UltraFET Trench
®
MOSFET
**----- End of picture text -----**
www.fairchildsemi.com **6** FDMS2572 Rev.C4 ## **TRADEMARKS** The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ F-PFS™ PowerTrench[®] The Power Franchise[®] AccuPower™ FRFET[®] PowerXS™ ® AX-CAP™*BitSiC[®] Global Power ResourceGreen Bridge™[SM] Programmable Active Droop™QFET[®] PweDwer Build it Now™ Green FPS™ QS™ TinyBoost™ CorePLUS™ Green FPS™ e-Series™ Quiet Series™ TinyBuck™ CorePOWER™ G _max_ ™ RapidConfigure™ TinyCalc™ _CROSSVOLT_ ™ GTO™ ™ TinyLogic[®] TINYOPTO™ CTL™ IntelliMAX™ Current Transfer Logic™ ISOPLANAR™ Saving our world, 1mW/W/kW at a time™ TinyPower™ DEUXPEED[®] Marking Small Speakers Sound Louder SignalWise™ TinyPWM™ Dual Cool™ and Better™ SmartMax™ TinyWire™ TranSiC[®] EcoSPARK[®] MegaBuck™ SMART START™ TriFault Detect™ EfficentMax™ MICROCOUPLER™ Solutions for Your Success™ TRUECURRENT[®] * ESBC™ MicroFET™ SPM[®] ® MicroPak™ STEALTH™ μSerDes™ MicroPak2™ SuperFET[®] Fairchild ~~-~~[®] MillerDrive™ SuperSOT™-3 VZ4.... Fairchild Semiconductor[®] MotionMax™ SuperSOT™-6 UHC[®] FACT Quiet Series™ Motion-SPM™ SuperSOT™-8 Ultra FRFET™ FACT[®] mWSaver™ SupreMOS[®] UniFET™ FAST[®] OptoHiT™ SyncFET™ VCX™ FastvCore™ OPTOLOGIC[®] Sync-Lock™ VisualMax™ FETBench™ OPTOPLANAR[®] ®* VoltagePlus™ FlashWriter[® ] * ® [5 SYSTEMGENERAL XS™ FPS™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. ## **DISCLAIMER** FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. ## **LIFE SUPPORT POLICY** FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are 2. intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ## **ANTI-COUNTERFEITING POLICY** Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. ## **PRODUCT STATUS DEFINITIONS Definition of Terms** |**Datasheet Identification**|**Product Status**|**Definition**| |---|---|---| |Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.| |Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.| |No Identification Needed|Full Production|Rev. I22
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.| |Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild
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