# Dual MOSFET, N Channel, 30 V, 167 A, 0.001 ohm

![Product image](https://novapart.co/image/farnell:3616879/)

**URL**: https://novapart.co/products/FDMD8630/dual-mosfet-n-channel-30-v-167-a-0001-ohm
**SKU**: FDMD8630
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €2.6800
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | PQFN |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 43W |
| Power Dissipation P Channel | - |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | - |
| Continuous Drain Current Id N Channel | 167A |
| Continuous Drain Current Id P Channel | - |
| Drain Source On State Resistance N Channel | 0.001ohm |
| Drain Source On State Resistance P Channel | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3616879/)

## FDMD8630 MOSFET – N-Channel, POWERTRENCH , Dual ~~—.~~ 30 V, 167 A, 1.0 m 

## **General Description** 

This package integrates two N−Channel devices connected internally in common−source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (5 x 6 mm) for higher power density. 

## **Features** 

- Common Source Configuration to Eliminate PCB Routing 

- Large Source Pad on Bottom of Package for Enhanced Thermals 

- Max rDS(on) = 1.0 m at VGS = 10 V, ID = 38 A 

- Max rDS(on) = 1.3 m at VGS = 4.5 V, ID = 33 A 

- Ideal for Flexible Layout in Secondary Side Synchronous Rectification 

- 100% UIL Tested 

## **www.onsemi.com** 

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Top Bottom<br>Pin 1<br>G1D1D1D1<br>S1 / S2<br>D2<br>D2<br>D2G2<br>PQFN8 5X6, 1.27P<br>CASE 483AS<br>**----- End of picture text -----**<br>


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MARKING DIAGRAM<br>**----- End of picture text -----**<br>


- This Device is Pb−Free and is RoHS Compliant 

## **Applications** 

- Isolated DC−DC Synchronous Rectifiers 

- Common Ground Load Switches 

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$Y&Z&3&K<br>FDMD<br>8630<br>&Y = ON Semiconductor Logo<br>&Z = Assembly Plant Code<br>&3 = Numeric Date Code<br>&K = Lot Code<br>FDMD8630 = Specific Device Code<br>**----- End of picture text -----**<br>


## **PIN CONFIGURATION** 

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G1 1 8 D2<br>D1 2 7 D2<br>D1 3 6 D2<br>D1 4 5 G2<br>S1,S2to backside<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Publication Order Number: **FDMS3604S/D** 

**1** 

© Semiconductor Components Industries, LLC, 2017 **June, 2024 − Rev. 3** 

**FDMD8630** 

**MOSFET MAXIMUM RATINGS** TA = 25 ° C Unless Otherwise Noted 

|**Symbol**|**Parameter**|**Ratings**|**Units**|
|---|---|---|---|
|VDS|Drain to Source Voltage|30|V|
|VGS|Gate to Source Voltage|±20|V|
|ID|Drain Current||A|
||−Continuous − TC= 25°C (Note 5)|167||
||−Continuous − TC=100°C (Note 5)|106||
||−Continuous − TA= 25°C (Note 1a)|38||
||−Pulsed − (Note 4)|1178||
|EAS|Single Pulse Avalanche Energy (Note 3)|726|mJ|
|PD|Power Dissipation for Single Operation TC= 25°C|43|W|
||Power Dissipation for Single Operation TA= 25°C (Note 1a)|2.3||
|TJ, TSTG|Operating and Storage Junction Temperature Range|−55 to +150|°C|
|**THERMAL CHARACTERISTICS**||||
|**Symbol**|**Parameter**|**Ratings**|**Unit**|
|RθJC|Thermal Resistance, Junction to Case|2.9|°C/W|
|RθJA|Thermal Resistance, Junction to Ambient (Note 1a)|55||
|||||



|**PACKAGE MARKING AND ORDERING**|**PACKAGE MARKING AND ORDERING**|**INFORMATION**|**INFORMATION**|||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|**Device Marking**<br>**Device**|||**Package**<br>**Reel Size**|||**Tape Width**|||**Quantity**|||
|FDMD8630<br>FDMD8630|||Power 5 x 6|13”||12 mm|||3000|Units||
|**ELECTRICAL CHARACTERISTICS**TJ=||25°C|Unless Otherwise Noted|||||||||
|**Symbol**|**Parameter**||**Test Conditions**|||**Min**|**Typ**||**Max**||**Units**|
|**OFF CHARACTERISTICS**||||||||||||
|BVDSS|Drain to Source Breakdown Voltage||ID= 250�A, VGS= 0 V|||30|||||V|
|�BVDSS/|Breakdown Voltage Temperature||ID= 250�A, referenced to 25°C||||15||||mV/°C|
|�TJ|Coefficient|||||||||||
|IDSS|Zero Gate Voltage Drain Current||VDS= 24 V, VGS= 0|V|||||1||�A|
|IGSS|Gate to Source Leakage Current,||VGS= 20 V, VDS= 0|V|||||100||nA|
||Forward|||||||||||
|**ON CHARACTERISTICS**||||||||||||
|VGS(th)|Gate to Source Threshold Voltage||VGS= VDS, ID= 250|�A||1.0|1.6||3.0||V|
|�VGS(th) /<br>�TJ|Gate to Source Threshold Voltage<br>Temperature Coefficient||ID= 250�A, referenced to 25°C||||−6||||mV/°C|
|rDS(on)|Static Drain to Source On Resistance<br>VGS= 10 V, ID= 38 A||||||0.6||1.0||m�|
||||VGS= 4.5 V, ID= 33|A|||0.8||1.3|||
||||VGS= 4.5 V, ID= 33|A, TJ= 125°C|||0.9||1.5|||
|gFS|Forward Transconductance||VDD= 5 V, ID= 38 A||||281||||S|
|**DYNAMIC CHARACTERISTICS**||||||||||||
|Ciss|Input Capacitance||VDS= 15 V, VGS= 0|V, f = 1 MHz|||7090||9930||pF|
|Coss|Output Capacitance||||||2025||2835||pF|
|Crss|Reverse Transfer Capacitance||||||212||300||pF|
|Rg|Gate Resistance|||||0.1|1.9||3.8||�|
|**SWITCHING CHARACTERISTICS**||||||||||||



**www.onsemi.com** 

**2** 

## **FDMD8630** 

**ELECTRICAL CHARACTERISTICS** TJ = 25 ° C Unless Otherwise Noted (continued) 

|**ELECTRICAL CHARACTERISTICS**|**ELECTRICAL CHARACTERISTICS**TJ = 25J = 25= 25°C Unless Otherwise Noted (continued)|C Unless Otherwise Noted (continued)|C Unless Otherwise Noted (continued)|||||
|---|---|---|---|---|---|---|---|
|**Symbol**<br>~~es~~|**Parameter**<br>~~es~~|**Test Conditions**<br>~~es~~||**Min**<br>~~es~~|**Typ**<br>~~es~~|**Max**<br>~~es~~|**Units**<br>~~es~~|
|**SWITCHING CHARACTERISTICS**<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>0<br>~~aa~~<br>~~ee~~||||||||
|td(on)<br>~~ee~~<br>~~es~~|Turn−On Delay Time<br>~~ee~~<br>~~ee~~|VDD= 15 V, ID= 38 A<br>VGS= 10 V, RGEN= 6<br>~~ee~~<br>0<br>~~ee~~<br>~~ee~~||~~a~~<br>~~a~~|14<br>~~a~~<br>~~a~~|26<br>~~ee~~<br>~~ee~~|ns|
|tr<br>~~ee~~<br>~~es~~<br>~~es~~|Rise Time<br>~~ee~~<br>~~ee~~<br>~~ee~~|||~~a ~~<br>~~a~~<br>~~a~~|15<br> ~~a~~<br>~~a~~<br>~~a~~|27<br>~~ee~~<br>~~ee~~<br>~~ee~~|ns|
|td(off)<br>~~es~~<br>~~es~~<br>~~es~~|Turn−Off Delay Time<br>~~ee~~<br>~~ee~~|||~~a ~~<br>~~a~~<br>~~a~~|66<br> ~~a~~<br>~~a~~<br>~~a~~|105<br>~~ee~~<br>~~ee~~<br>~~ee~~|ns|
|tf<br>~~es~~<br>~~es~~<br>~~ee~~|Fall Time<br>~~ee~~<br>~~ee~~|||~~a ~~<br>~~a~~<br>~~ee~~|24<br> ~~a~~<br>~~a~~<br>~~ee~~|39<br>~~ee~~<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~|
|Qg(TOT)<br>~~es~~<br>~~ee~~|Total Gate Charge<br>~~ee~~|VGS= 0 V to 10 V|VDD= 15 V<br>ID= 38 A|~~a ~~<br>~~ee~~|97<br> ~~a~~<br>~~ee~~|142<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~|
|Qg(TOT)<br>~~ee~~<br>~~a~~<br>~~ee~~|Total Gate Charge<br>~~ee~~<br>~~ee~~|VGS= 0 V to 4.5 V<br>~~ee~~||~~ee~~<br>~~ee~~<br>~~a~~|46<br>~~ee~~<br>~~ee~~<br>~~a~~|74<br>~~ee~~<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~|
|Qgs<br>~~ee~~<br>~~ee~~|Gate to Source Gate Charge<br>~~ee~~|||~~a~~<br>~~a~~|17<br>~~a~~<br>~~a~~|~~ee~~<br>~~ee~~|nC|
|Qgd<br>~~ee~~<br>~~ee~~|Gate to Drain “Miller” Charge<br>~~ee~~|||~~a ~~<br>~~a~~|12<br> ~~a~~<br>~~a~~|~~ee~~<br>~~ee~~|nC|
|**DRAIN−SOURCE DIODE CHARACTERISTICS**<br>~~ee~~<br>~~a a~~<br>~~ee~~<br>~~eo~~||||||||
|VSD<br>~~RG~~<br>~~Hj;~~|Source to Drain Diode Forward Voltage<br>~~RG~~<br>~~Hj;~~|VGS= 0 V, IS= 38 A (Note 2)<br>~~RG~~<br>~~Hj;~~||~~RG~~|0.8<br>~~RG~~<br>~~Os~~|1.3<br>~~RG~~<br>~~Os~~|V<br>~~RG~~|
|VSD<br>~~GN~~<br>~~Hj;~~<br>~~es~~|Source to Drain Diode Forward Voltage<br>~~GN~~<br>~~Hj;~~|VGS= 0 V, IS= 2 A (Note 2)<br>~~GN~~<br>~~Hj;~~<br>~~*Oe~~||~~GN~~<br>~~Oe4H~~|0.7<br>~~GN~~<br>~~Os~~<br>~~4H SE~~|1.2<br>~~GN~~<br>~~Os~~<br>~~SE~~|V<br>~~GN~~<br>~~SE~~|
|trr<br>~~Hj;~~<br>~~es~~|Reverse Recovery Time<br>~~Hj;~~<br>~~ee~~|IF= 38 A, di/dt = 100 A/ s<br>~~Hj;~~<br>~~*Oe~~<br>~~ee~~||~~Oe4H~~<br>~~Pee~~|64<br>~~Os~~<br>~~4H SE~~<br>~~Pee~~|103<br>~~Os~~<br>~~SE~~<br>~~Pee~~|ns<br>~~SE~~<br>~~Pee~~|
|Qrr<br>~~Hj;~~<br>~~es~~|Reverse Recovery Charge<br>~~Hj;~~<br>~~ee~~|||~~Oe4H~~<br>~~Pee~~|56<br>~~Os~~<br>~~4H SE~~<br>~~Pee~~|90<br>~~Os~~<br>~~SE~~<br>~~Pee~~|nC<br>~~SE~~<br>~~Pee~~|



2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. wu 

3. EAS of 726 mJ is based on starting TJ = 25 ° C, L = 3 mH, IAS = 22 A, VDD = 30 V, VGS = 10 V. 100% tested at L = 0.1 mH, IAS = 70 A. 

4. Pulsed Id please refer to Fig 11 SOA graph for more details. 

5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro−mechanical application board design. 

**www.onsemi.com** 

**3** 

**FDMD8630** 

## **TYPICAL CHARACTERISTICS** 

TJ = 25 ° C Unless Otherwise Noted 

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200 6<br>VGS = 10 V PULSE  DURATION = 80 s<br>VGS = 4.5 V 5 DUTY CYCLE = 0.5% MAX<br>150 VGS = 4 V<br>VGS = 3.5 V 4 et VGS = 3 V<br>100 3<br>VGS = 3 V 2 VGS = 3.5 V<br>50<br>1 SEE<br>PULSE DURATION = 80DUTY CYCLE = 0.5% MAXs VGS = 4 V VGS = 4.5 V VGS = 10 V<br>0 0 a———_|<br>0.0 0.2 0.4 0.6 0.8 0 40 80 120 160 200<br>VDS , DRAIN TO SOURCE VOLTAGE (V) ID , DRAIN CURRENT (A)<br>Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs Drain<br>Current and Gate Voltage<br>1.6 10<br>ID = 38 A PULSE DURATION = 80 s<br>1.5<br>VGS = 10 V DUTY CYCLE = 0.5% MAX<br>1.4 8<br>ID = 38 A<br>1.3<br>y 6 Corns<br>1.2<br>1.1<br>4<br>1.0<br>0.9 2 TJ = 25 [o] C TJ = 125 [o] C<br>0.8 So<br>0.7 gle 0<br>-75    -50    -25 0 25 50 75    100    125    150 2 4 6 8 10<br>TJ , JUNCTION TEMPERATURE ( [o] C) VGS , GATE TO SOURCE VOLTAGE (V)<br>Figure 3. Normalized On Resistance Figure 4. On−Resistance vs Gate to Source<br>vs Junction Temperature Voltage<br>200 200<br>PULSE DURATION = 80 s 100 VGS = 0 V<br>DUTY CYCLE = 0.5% MAX<br>160<br>VDS = 5 V 10<br>TJ = 150 [o] C<br>120<br>1<br>TJ = 150 [o] C TJ = 25 [o] C<br>80 0.1<br>TJ = 25 [o] C<br>40 0.01 TJ  = -55 [o] C<br>TJ  = -55 [o] C<br>0 0.001<br>0 1 2 3 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>NORMALIZED<br>, DRAIN CURRENT (A)<br>ID<br>DRAIN TO SOURCE ON−RESISTANCE<br>)<br>m<br> (<br> DRAIN TO<br>NORMALIZED rDS(on),<br>SOURCE ON−RESISTANCE<br>DRAIN TO SOURCE ON−RESISTANCE<br>, DRAIN CURRENT (A)<br>ID<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 5. Transfer Characteristics** 

**Figure 6. Source to Drain Diode Forward Voltage vs Source Current** 

**www.onsemi.com** 

**4** 

**FDMD8630** 

## **TYPICAL CHARACTERISTICS** 

TJ = 25 ° C Unless Otherwise Noted (continued) 

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**----- Start of picture text -----**<br>
10<br>ID = 38 A<br>8<br>VDD = 15 V<br>6<br>VDD = 10 V<br>VDD = 20 V<br>4<br>2<br>0<br>0 20 40 60 80 100<br>Qg, GATE CHARGE (nC)<br>Figure 7. Gate Charge Characteristics<br>100<br>TJ = 25 [o] C<br>10 TJ = 100 [o] C<br>TJ = 125 [o] C<br>1<br>0.01 0.1 1 10 100 1000<br>tAV, TIME IN AVALANCHE (ms)<br>Figure 9. Unclamped Inductive Switching<br>Capability<br>3000<br>1000<br>10   � s<br>100<br>10 100 � s<br>THIS AREA IS<br>LIMITED BYrDS(on) 1 ms<br>1<br>10 m s<br>SINGLE PULSE<br>TJ  = MAX RATED 100 m s<br>0.1 R � JC = 2.9 [o] C/W CURVE BENT TO<br>TC = 25 [o] C MEASURED DATA<br>0.01<br>0.01 0.1 1 10 100 200<br>VDS, DRAIN to SOURCE VOLTAGE (V)<br>, GATE TO SOURCE VOLTAGE (V)<br>GS<br>V<br>, AVALANCHE CURRENT (A)<br>IAS<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10000<br>Ciss<br>Coss<br>1000<br>f = 1 MHz<br>VGS = 0 V<br>Crss<br>100<br>0.1 1 10 30<br>VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 8. Capacitance vs Drain to Source Voltage<br>200<br>160<br>VGS = 10 V<br>120<br>80 VGS = 4.5 V<br>40<br>R � JC = 2.9 [o] C/W<br>0<br>25 50 75 100 125 150<br>T , CASE TEMPERATURE ( o C)<br>CAPACITANCE (pF)<br> DRAIN CURRENT (A)I,D<br>**----- End of picture text -----**<br>


**Figure 8. Capacitance vs Drain to Source Voltage** 

**Figure 10. Maximum Continuous Drain Current vs Case Temperature** 

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**----- Start of picture text -----**<br>
100000<br>SINGLE  PULSE<br>R � JC = 2.9 [o] C/W<br>10000 TC = 25 [o] C<br>1000<br>100<br>10<br>10−5 10−4 10−3 10−2 10−1 1<br>t, PULSE WIDTH (sec)<br> PEAK TRANSIENT POWER (W)(PK),<br>P<br>**----- End of picture text -----**<br>


**Figure 11. Forward Bias Safe Operating Area** 

**Figure 12. Single Pulse Maximum Power Dissipation** 

**www.onsemi.com** 

**5** 

**FDMD8630** 

## **TYPICAL CHARACTERISTICS** 

TJ = 25 ° C Unless Otherwise Noted (continued) 

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**----- Start of picture text -----**<br>
2<br>DUTY CYCLE−DESCENDING ORDER<br>1<br>D = 0.5<br>0.2<br>0.1 PDM<br>0.1 0.05<br>0.02<br>0.01 t1<br>t2<br>NOTES:<br>0.01 Z � JC (t) = r(t) x R � JC<br>R � JC = 2.9 [o] C/W<br>SINGLE PULSE Peak TJ = PDM x Z � JC (t) + TC<br>Duty Cycle, D = t1 / t2<br>0.001<br>10−5 10−4 10−3 10−2 10−1 1<br>t, RECTANGULAR PULSE DURATION (sec)<br>Figure 13. Junction−to−Ambient Transient Thermal Response Curve<br>THERMAL RESISTANCE<br>r(t), NORMALIZED EFFECTIVE TRANSIENT<br>**----- End of picture text -----**<br>


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POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 

**www.onsemi.com** 

**6** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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PQFN8 5X6, 1.27P<br>CASE 483AS<br>ISSUE A<br>**----- End of picture text -----**<br>


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DATE 17 MAY 2021<br>**----- End of picture text -----**<br>


## **DOCUMENT NUMBER:** 

## **DESCRIPTION:** 

## **98AON13667G** 

## **PQFN8 5X6, 1.27P** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 1** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba onsemi **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

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