# Power MOSFET, N Channel, 60 V, 22 A, 6500 µohm, Power 33, Surface Mount ![Product image](https://novapart.co/image/farnell:2825168RL/) **URL**: https://novapart.co/products/FDMC86520L/power-mosfet-n-channel-60-v-22-a-6500-ohm-33 **SKU**: FDMC86520L **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.9480 **Stock**: 1000+ **Lead Time**: 162 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 8Pins | | Channel Type | N Channel | | Product Range | PowerTrench | | Qualification | - | | Power Dissipation | 40W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | Power 33 | | Drain Source Voltage Vds | 60V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 22A | | Drain Source On State Resistance | 6500µohm | | Gate Source Threshold Voltage Max | 1.7V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2825168RL/) ## **FDMC86520L** ## **N-Channel Power Trench[®] MOSFET 60 V, 22 A, 7.9 m** Ω ## **Features** Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant ## **General Description** This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. ## **Applications** Primary Switch in isolated DC-DC Synchronous Rectifier Load Switch |**Top**||||**Bottom**||||||| |---|---|---|---|---|---|---|---|---|---|---| |Pin 1
SS|**S**|**S**|**S**|**D**
**D**
**D**
**G**|**D**|**D**
**D**
**D**
**D**|**5**
**6**
**7**
**8**||**3**
**2**
**1**
**4**|**G**
**S**
**S**
**S**| |**MLP 3.3x3.3**||||||||||| |**MOSFET Maximum Ratings **TA= 25 °C unless otherwise noted|= 25 °C unless otherwise noted|= 25 °C unless otherwise noted|= 25 °C unless otherwise noted|||||||| |**Symbol**|**Parameter**|||||||**Ratings**||**Units**| |VDS
Drain to Source Voltage||||||||60||V| |VGS
Gate to Source Voltage||||||||±20||V| |Drain Current -Continuous|Drain Current -Continuous|Drain Current -Continuous||TC = 25 °C|= 25 °C|= 25 °C||22||| |ID
-Continuous||||TA= 25 °C|= 25 °C|(Note 1a)||13.5||A| |-Pulsed||||||||60||| |EAS
Single Pulse Avalanche Energy||||||(Note 3)||79||mJ| |PD
Power Dissipation
Power Dissipation||||TC= 25 °C
TA= 25 °C|= 25 °C
= 25 °C|(Note 1a)||40
2.3||W| |TJ, TSTG
Operatingand Storage Junction Tem|e Junction Temperature Range|||||||-55 to +150||°C| **MOSFET Maximum Ratings** TA = 25 °C unless otherwise noted **Thermal Characteristics** RθJC Thermal Resistance, Junction to Case 3.1 °C/W ~~St)~~ RθJA Thermal Resistance, Junction to Ambient (Note 1a) 53 **Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity** FDMC86520L FDMC86520L Power 33 13 ’’ 12 mm 3000 units ~~J}ff}f+ _—_~~ ©2011 Semiconductor Components Industries, LLC. October-2017, Rev . 3 Publication Order Number: FDMC86520L/D **Electrical Characteristics** TJ = 25 °C unless otherwise noted |**Off Characteristics**
**On Characteristics**
**Dynamic Characteristics**
**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
BVDSS
Drain to Source Breakdown Voltage
ID= 250μA, VGS= 0 V
60
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= 250μA, referenced to 25 °C
29
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 48 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS= ±20 V, VDS = 0 V
±100
nA
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250μA
1
1.7
3
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250μA, referenced to 25 °C
-7
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= 10 V, ID= 13.5 A
6.5
7.9
mΩ
VGS= 4.5 V, ID= 11.5 A
9.1
11.7
VGS= 10 V, ID= 13.5 A, TJ= 125 °C
9
11
gFS
Forward Transconductance
VDS= 5 V, ID= 13.5 A
49
S
Ciss
Input Capacitance
VDS= 30 V, VGS= 0 V,
f = 1 MHz
3420
4550
pF
Coss
Output Capacitance
638
850
pF
Crss
Reverse Transfer Capacitance
25
40
pF
~~|~~
~~—|)~~
~~ee~~
~~ee~~
~~ee~~
~~ee~~
~~ee~~
~~ee~~
~~a~~|**Off Characteristics**
**On Characteristics**
**Dynamic Characteristics**
**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
BVDSS
Drain to Source Breakdown Voltage
ID= 250μA, VGS= 0 V
60
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= 250μA, referenced to 25 °C
29
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 48 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS= ±20 V, VDS = 0 V
±100
nA
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250μA
1
1.7
3
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250μA, referenced to 25 °C
-7
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= 10 V, ID= 13.5 A
6.5
7.9
mΩ
VGS= 4.5 V, ID= 11.5 A
9.1
11.7
VGS= 10 V, ID= 13.5 A, TJ= 125 °C
9
11
gFS
Forward Transconductance
VDS= 5 V, ID= 13.5 A
49
S
Ciss
Input Capacitance
VDS= 30 V, VGS= 0 V,
f = 1 MHz
3420
4550
pF
Coss
Output Capacitance
638
850
pF
Crss
Reverse Transfer Capacitance
25
40
pF
~~|~~
~~—|)~~
~~ee~~
~~ee~~
~~ee~~
~~ee~~
~~ee~~
~~ee~~
~~a~~|| |---|---|---| |Rg
Gate Resistance|0.5
Ω|| |**Switching Characteristics**||| |td(on)
Turn-On DelayTime
tr
Rise Time
td(off)
Turn-Off DelayTime
tf
Fall Time
Qg(TOT)
Total Gate Charge
Qg(TOT)
Total Gate Charge
Qgs
Total Gate Charge
Qgd
Gate to Drain “Miller” Charge
~~ee~~
~~ee~~
~~ee~~
~~ee~~
~~Ps~~
~~Ps~~
~~ee~~
~~ee~~|VDD= 30 V, ID= 13.5 A,
VGS= 10 V, RGEN= 6Ω
15
30
ns
5.2
10
ns
32
55
ns
3.4
10
ns
VGS = 0 V to 10 V
VDD= 30 V,
ID= 13.5 A
45
64
nC
VGS = 0 V to 4.5 V
21
30
nC
9.6
nC
4.9
nC
~~ee~~
~~ee~~
~~ee ee~~
~~|~~
~~|CTT~~
~~|~~
~~|CTT~~
~~|~~
~~|TT~~
~~|~~
~~|CTT~~
~~|~~
~~|CTT~~
~~|~~
~~|CTT~~
~~|~~
~~|CT~~|| |**Drain-Source Diode Characteristics**||| |VSD
Source to Drain Diode Forward Voltage|VGS = 0 V, IS = 13.5 A
(Note 2)
0.82
1.3
V
VGS = 0 V, IS = 2 A
(Note 2)
0.71
1.2|| |trr
Reverse RecoveryTime
Qrr
Reverse RecoveryCharge|IF= 13.5 A, di/dt = 100 A/μs
38
62
ns
21
34
nC|| NOTES: 1. RθJA is determined with the device mounted on a 1 in[2] pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 53 °C/W when mounted on a 125 °C/W when mounted on 1 in[2 ] pad of 2 oz copper a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 0.3 mH, IAS = 23 A, VDD = 54 V, VGS = 10 V. **www.onsemi.com 2** **Typical Characteristics** TJ = 25 °C unless otherwise noted **==> picture [464 x 590] intentionally omitted <==** **----- Start of picture text -----**
60 4
VGS = 4 V PULSE DURATION = 80 μ s
50 DUTY CYCLE = 0.5% MAX
VGS = 3.5 V 3
40 VGS = 3 V
VGS = 10 V VGS = 3.5 V
30 VGS = 4.5 V 2
VGS = 4 V
20 VGS = 3 V
VGS = 4.5 V
1
10 VGS = 10 V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
0 0
0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 50 60
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
1.8 40
1.6 ID = 13.5 A ID = 13.5 A PULSE DURATION = 80 DUTY CYCLE = 0.5% MAX μ s
VGS = 10 V 30
1.4
1.2 20
1.0 TJ = 125 [o] C
10
0.8
TJ = 25 [o] C
0.6 0
-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance Figure 4. On-Resistance vs. Gate to
vs. Junction Temperature Source Voltage
60 100
PULSE DURATION = 80 μ s VGS = 0 V
DUTY CYCLE = 0.5% MAX
50
10
VDS = 5 V
40 TJ = 150 [o] C
1
30
TJ = 25 [ o] C
TJ = 150 [o] C 0.1
20
TJ = 25 [o] C
0.01
10
TJ = -55 [o] C TJ = -55 [o] C
0 0.001
1.5 2.0 2.5 3.0 3.5 4.0 0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
NORMALIZED
, DRAIN CURRENT (A)
ID
DRAIN TO SOURCE ON-RESISTANCE
)
Ω
m
(
DRAIN TO
NORMALIZED rDS(on),
SOURCE ON-RESISTANCE
DRAIN TO SOURCE ON-RESISTANCE
, DRAIN CURRENT (A)
ID
, REVERSE DRAIN CURRENT (A)
IS
**----- End of picture text -----**
**Figure 5. Transfer Characteristics** **Figure 6. Source to Drain Diode Forward Voltage vs. Source Current** **www.onsemi.com** **3** **Typical Characteristics** TJ = 25 °C unless otherwise noted **==> picture [464 x 610] intentionally omitted <==** **----- Start of picture text -----**
10 10000
ID = 13.5 A VDD = 30 V
8 C iss
1000
VDD = 20 V VDD = 40 V
6
C oss
100
4
10
2
f = 1 MHz Crss
VGS = 0 V
0 1
0 10 20 30 40 50 0.1 1 10 60
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain
to Source Voltage
50 60
50
VGS = 10 V
TJ = 25 [ o] C 40
10 VGS = 4.5 V
TJ = 100 [ o] C 30
20
Limited by package
10
TJ = 125 [o] C R θ JC = 3.1 [o] C/W
1 0
0.01 0.1 1 10 100 25 50 75 100 125 150
tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE (oC)
Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain
Switching Capability Current vs. Case Temperature
100 2000
1000 SINGLE PULSE
100 us R θ JA = 125 [o] C/W
10 T A = 25 [o] C
100
1 ms
1 THIS AREA IS 10 ms
LIMITED BY r
DS(on) 100 ms 10
SINGLE PULSE
0.1 TJ = MAX RATED 1 s
TR A θ JA= 25 = 125 [o] C [ o] C/W 10 s DC 1
0.01 0.5
0.01 0.1 1 10 100 300 10-4 10-3 10-2 10-1 1 10 100 1000
VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation
CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE (V)
GS
V
DRAIN CURRENT (A)
,
ID
, AVALANCHE CURRENT (A)
IAS
, DRAIN CURRENT (A)
ID
PEAK TRANSIENT POWER (W)
P)(PK,
**----- End of picture text -----**
**www.onsemi.com** **4** **Typical Characteristics** TJ = 25 °C unless otherwise noted **==> picture [470 x 181] intentionally omitted <==** **----- Start of picture text -----**
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02 PDM
0.01
0.01 t1
t2
SINGLE PULSE NOTES:
DUTY FACTOR: D = t 1 /t 2
R θ JA = 125 [o] C/W PEAK TJ = PDM x Z θJA x R θJA + TA
0.001
0.0005
10-4 10-3 10-2 10-1 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)
Z JA θ
IMPEDANCE,
NORMALIZED THERMAL
**----- End of picture text -----**
**Figure 13. Junction-to-Ambient Transient Thermal Response Curve** **www.onsemi.com** **5** ## **Dimensional Outline and Pad Layout** _Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, spe-cifically the warranty therein, which covers ON Semiconductor products._ **www.onsemi.com** **6** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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