# Power MOSFET, P Channel, 30 V, 18 A, 0.014 ohm, MLP, Surface Mount ![Product image](https://novapart.co/image/farnell:3368745/) **URL**: https://novapart.co/products/FDMC4435BZ-F126/power-mosfet-p-channel-30-v-18-a-0014-ohm-mlp **SKU**: FDMC4435BZ-F126 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.3290 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 8Pins | | Channel Type | P Channel | | Product Range | PowerTrench | | Power Dissipation | 31W | | Transistor Mounting | Surface Mount | | Transistor Polarity | P Channel | | Power Dissipation Pd | 31W | | Rds(On) Test Voltage | 10V | | On Resistance Rds(On) | 0.014ohm | | Transistor Case Style | MLP | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 18A | | Drain Source On State Resistance | 0.014ohm | | Gate Source Threshold Voltage Max | 1.8V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3368745/) ## **FDMC4435BZ** ## **P-Channel Power Trench[®] MOSFET** ## **-30 V, -18 A, 20 m** Ω ## **Features** Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -8.5 A Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.3 A Extended VGSS range (-25 V) for battery applications High performance trench technology for extremely low rDS(on) High power and current handling capability HBM ESD protection level >7 kV typical (Note 4) 100% UIL Tested Termination is Lead-free and RoHS Compliant ## **General Description** This P-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench **[®]** process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. ## **Applications** High side in DC - DC Buck Converters Notebook battery power management Load switch in Notebook |**Top**||**Bottom**|||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||||||||||||| |**D**
**D**
**D**
**D**
**S**
**S**
**S**
**G**
Pin 1
~~@~~>|||||**D**
**D**
**D**
**D**|**5**
**6**
**7**
**8**
.||||**4**
**3**
**2**
**1**||**G**
**S**
**S**
**S**|| ||||||||||||||| |**MLP 3.3x3.3**|||||||||||||| |**MOSFET Maximum Ratings **TA= 25 °C unless otherwise noted||= 25 °C unless otherwise noted|||||||||||| |**Symbol**||**Parameter**||||||**Ratings**||||**Units**|| |VDS
Drain to Source Voltage||||||||-30||||V|| |VGS
Gate to Source Voltage||||||||±25||||V|| |Drain Current -Continuous|Drain Current -Continuous|Drain Current -Continuous
TC = 25 °C||= 25 °C|= 25 °C|||-18|||||| |ID
-Continuous||TA= 25 °C||= 25 °C|= 25 °C
(Note 1a)|||-8.5||||A|| |-Pulsed||||||||-50|||||| |EAS
Single Pulse Avalanche Energy|||||(Note 3)|||32||||mJ|| |PD
Power Dissipation
Power Dissipation||TC= 25 °C
TA= 25 °C||= 25 °C
= 25 °C|= 25 °C
(Note 1a)|||31
2.3||||W|| |TJ, TSTG
Operatingand Storage Junction Tem||e Junction Temperature Range||||||-55 to +150||||°C|| |**Thermal Characteristics**|||||||||||||| |**Package Marking and Ordering Information**
RθJC
Thermal Resistance, Junction to Case
4
°C/W
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
53
~~ee~~
~~ee ae~~|||||||||||||| |**Device Marking**
**Device**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
FDMC4435BZ
FDMC4435BZ
MLP 3.3X3.3
13 ’’
12 mm
3000 units
~~ee~~|||||||||||||| ©2010 Semiconductor Components Industries, LLC. **1** October-2017, Rev.3 Publication Order Number: FDMC4435BZ/D ## **Electrical Characteristics** TJ = 25 °C unless otherwise noted |**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= -250μA, VGS= 0 V
-30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= -250μA, referenced to 25 °C
21
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= -24 V,
-1
μA
VGS = 0 V,
TJ= 125 °C
-100
IGSS
Gate to Source Leakage Current
VGS= ±25 V, VDS = 0 V
±10
μA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= -250μA
-1.0
-1.8
-3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= -250μA, referenced to 25 °C
-5
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= -10 V, ID= -8.5 A
14
20
mΩ
VGS= -4.5 V, ID= -6.3 A
21
37
VGS= -10 V, ID= -8.5 A,
TJ= 125 °C
20
29
gFS
Forward Transconductance
VDD= -5 V, ID= -8.5 A
25
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= -15 V, VGS= 0 V,
f = 1 MHz
1535
2040
pF
Coss
Output Capacitance
310
410
pF
Crss
Reverse Transfer Capacitance
280
420
pF
~~a~~
~~— |~~
~~ee~~
~~ee~~
~~ee eee~~
~~eeDG~~
~~I~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= -250μA, VGS= 0 V
-30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= -250μA, referenced to 25 °C
21
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= -24 V,
-1
μA
VGS = 0 V,
TJ= 125 °C
-100
IGSS
Gate to Source Leakage Current
VGS= ±25 V, VDS = 0 V
±10
μA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= -250μA
-1.0
-1.8
-3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= -250μA, referenced to 25 °C
-5
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= -10 V, ID= -8.5 A
14
20
mΩ
VGS= -4.5 V, ID= -6.3 A
21
37
VGS= -10 V, ID= -8.5 A,
TJ= 125 °C
20
29
gFS
Forward Transconductance
VDD= -5 V, ID= -8.5 A
25
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= -15 V, VGS= 0 V,
f = 1 MHz
1535
2040
pF
Coss
Output Capacitance
310
410
pF
Crss
Reverse Transfer Capacitance
280
420
pF
~~a~~
~~— |~~
~~ee~~
~~ee~~
~~ee eee~~
~~eeDG~~
~~I~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= -250μA, VGS= 0 V
-30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= -250μA, referenced to 25 °C
21
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= -24 V,
-1
μA
VGS = 0 V,
TJ= 125 °C
-100
IGSS
Gate to Source Leakage Current
VGS= ±25 V, VDS = 0 V
±10
μA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= -250μA
-1.0
-1.8
-3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= -250μA, referenced to 25 °C
-5
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= -10 V, ID= -8.5 A
14
20
mΩ
VGS= -4.5 V, ID= -6.3 A
21
37
VGS= -10 V, ID= -8.5 A,
TJ= 125 °C
20
29
gFS
Forward Transconductance
VDD= -5 V, ID= -8.5 A
25
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= -15 V, VGS= 0 V,
f = 1 MHz
1535
2040
pF
Coss
Output Capacitance
310
410
pF
Crss
Reverse Transfer Capacitance
280
420
pF
~~a~~
~~— |~~
~~ee~~
~~ee~~
~~ee eee~~
~~eeDG~~
~~I~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= -250μA, VGS= 0 V
-30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= -250μA, referenced to 25 °C
21
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= -24 V,
-1
μA
VGS = 0 V,
TJ= 125 °C
-100
IGSS
Gate to Source Leakage Current
VGS= ±25 V, VDS = 0 V
±10
μA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= -250μA
-1.0
-1.8
-3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= -250μA, referenced to 25 °C
-5
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= -10 V, ID= -8.5 A
14
20
mΩ
VGS= -4.5 V, ID= -6.3 A
21
37
VGS= -10 V, ID= -8.5 A,
TJ= 125 °C
20
29
gFS
Forward Transconductance
VDD= -5 V, ID= -8.5 A
25
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= -15 V, VGS= 0 V,
f = 1 MHz
1535
2040
pF
Coss
Output Capacitance
310
410
pF
Crss
Reverse Transfer Capacitance
280
420
pF
~~a~~
~~— |~~
~~ee~~
~~ee~~
~~ee eee~~
~~eeDG~~
~~I~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= -250μA, VGS= 0 V
-30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= -250μA, referenced to 25 °C
21
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= -24 V,
-1
μA
VGS = 0 V,
TJ= 125 °C
-100
IGSS
Gate to Source Leakage Current
VGS= ±25 V, VDS = 0 V
±10
μA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= -250μA
-1.0
-1.8
-3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= -250μA, referenced to 25 °C
-5
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= -10 V, ID= -8.5 A
14
20
mΩ
VGS= -4.5 V, ID= -6.3 A
21
37
VGS= -10 V, ID= -8.5 A,
TJ= 125 °C
20
29
gFS
Forward Transconductance
VDD= -5 V, ID= -8.5 A
25
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= -15 V, VGS= 0 V,
f = 1 MHz
1535
2040
pF
Coss
Output Capacitance
310
410
pF
Crss
Reverse Transfer Capacitance
280
420
pF
~~a~~
~~— |~~
~~ee~~
~~ee~~
~~ee eee~~
~~eeDG~~
~~I~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= -250μA, VGS= 0 V
-30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= -250μA, referenced to 25 °C
21
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= -24 V,
-1
μA
VGS = 0 V,
TJ= 125 °C
-100
IGSS
Gate to Source Leakage Current
VGS= ±25 V, VDS = 0 V
±10
μA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= -250μA
-1.0
-1.8
-3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= -250μA, referenced to 25 °C
-5
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= -10 V, ID= -8.5 A
14
20
mΩ
VGS= -4.5 V, ID= -6.3 A
21
37
VGS= -10 V, ID= -8.5 A,
TJ= 125 °C
20
29
gFS
Forward Transconductance
VDD= -5 V, ID= -8.5 A
25
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= -15 V, VGS= 0 V,
f = 1 MHz
1535
2040
pF
Coss
Output Capacitance
310
410
pF
Crss
Reverse Transfer Capacitance
280
420
pF
~~a~~
~~— |~~
~~ee~~
~~ee~~
~~ee eee~~
~~eeDG~~
~~I~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= -250μA, VGS= 0 V
-30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= -250μA, referenced to 25 °C
21
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= -24 V,
-1
μA
VGS = 0 V,
TJ= 125 °C
-100
IGSS
Gate to Source Leakage Current
VGS= ±25 V, VDS = 0 V
±10
μA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= -250μA
-1.0
-1.8
-3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= -250μA, referenced to 25 °C
-5
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= -10 V, ID= -8.5 A
14
20
mΩ
VGS= -4.5 V, ID= -6.3 A
21
37
VGS= -10 V, ID= -8.5 A,
TJ= 125 °C
20
29
gFS
Forward Transconductance
VDD= -5 V, ID= -8.5 A
25
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= -15 V, VGS= 0 V,
f = 1 MHz
1535
2040
pF
Coss
Output Capacitance
310
410
pF
Crss
Reverse Transfer Capacitance
280
420
pF
~~a~~
~~— |~~
~~ee~~
~~ee~~
~~ee eee~~
~~eeDG~~
~~I~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= -250μA, VGS= 0 V
-30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= -250μA, referenced to 25 °C
21
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= -24 V,
-1
μA
VGS = 0 V,
TJ= 125 °C
-100
IGSS
Gate to Source Leakage Current
VGS= ±25 V, VDS = 0 V
±10
μA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= -250μA
-1.0
-1.8
-3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= -250μA, referenced to 25 °C
-5
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= -10 V, ID= -8.5 A
14
20
mΩ
VGS= -4.5 V, ID= -6.3 A
21
37
VGS= -10 V, ID= -8.5 A,
TJ= 125 °C
20
29
gFS
Forward Transconductance
VDD= -5 V, ID= -8.5 A
25
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= -15 V, VGS= 0 V,
f = 1 MHz
1535
2040
pF
Coss
Output Capacitance
310
410
pF
Crss
Reverse Transfer Capacitance
280
420
pF
~~a~~
~~— |~~
~~ee~~
~~ee~~
~~ee eee~~
~~eeDG~~
~~I~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= -250μA, VGS= 0 V
-30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= -250μA, referenced to 25 °C
21
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= -24 V,
-1
μA
VGS = 0 V,
TJ= 125 °C
-100
IGSS
Gate to Source Leakage Current
VGS= ±25 V, VDS = 0 V
±10
μA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= -250μA
-1.0
-1.8
-3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= -250μA, referenced to 25 °C
-5
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= -10 V, ID= -8.5 A
14
20
mΩ
VGS= -4.5 V, ID= -6.3 A
21
37
VGS= -10 V, ID= -8.5 A,
TJ= 125 °C
20
29
gFS
Forward Transconductance
VDD= -5 V, ID= -8.5 A
25
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= -15 V, VGS= 0 V,
f = 1 MHz
1535
2040
pF
Coss
Output Capacitance
310
410
pF
Crss
Reverse Transfer Capacitance
280
420
pF
~~a~~
~~— |~~
~~ee~~
~~ee~~
~~ee eee~~
~~eeDG~~
~~I~~| |---|---|---|---|---|---|---|---|---| |Rg
Gate Resistance||f = 1 MHz|||4||Ω|| |**Switching Characteristics**||||||||| |td(on)
Turn-On DelayTime
tr
Rise Time
td(off)
Turn-Off DelayTime
tf
Fall Time
Qg
Total Gate Charge
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
~~ee~~
~~ee~~
~~ee~~
~~ee~~
~~ee~~
~~ee~~
~~ee~~
~~ee~~||VDD= -15 V, ID= -8.5 A,
VGS= -10 V, RGEN= 6Ω
10
20
9
18
35
56
19
34
VGS= 0 V to -10 V
VDD= -15 V,
ID= -8.5 A
38
53
VGS= 0 V to -4.5 V
20
28
4.3
11
~~ee ee ee~~
~~ee ee ee~~
~~ee ee ee~~
~~ee eee ee~~
~~ee ee ee ~~
~~ee ee ee~~
~~ee ee ee~~
~~ee~~
~~ee ee ~~||||
|ns
ns
ns
ns
nC
nC
nC
nC
~~ee~~
~~ee~~
~~ee~~
~~ee~~
~~eee~~
~~ee~~
~~ee~~
~~eee~~|| |**Drain-Source Diode Characteristics**||||||||| |VSD
Source to Drain Diode Forward Voltage|VGS = 0 V, IS = -8.5A
VGS = 0 V, IS = -1.9 A|||= -8.5A(Note 2)
= -1.9 A(Note 2)|0.86
1.5
0.74
1.2||V|| |trr
Reverse RecoveryTime
Qrr
Reverse RecoveryCharge|IF= -8.5 A, di/dt = 100 A/μs||||26
40
12
20||ns
nC|| NOTES: 1. RθJA is determined with the device mounted on a 1 in[2] pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53 °C/W when mounted on a 1 in[2 ] pad of 2 oz copper b.125 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 30 0 μs, Duty cycle < 2.0 %. 3. Starting TJ = 25[o] C; P-ch: L = 1mH, IAS = -8A, VDD = -27V, VGS = -10V. 4. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied. **www.onsemi.com** **2** **Typical Characteristics** TJ = 25°C unless otherwise noted **==> picture [463 x 557] intentionally omitted <==** **----- Start of picture text -----**
50 4.0
VGS = -4.5V 3.5 PULSE DURATION = 80 DUTY CYCLE = 0.5%MAX μ s
40 V V GSGS = = -10V -5V 3.0 VGS = -3.5V
30 VGS = -4V
2.5
VGS = -4V
2.0 V GS = -4.5V
20
1.5
10 VGS = -3.5V VGS = -5V
PULSE DURATION = 80 μ s 1.0
DUTY CYCLE = 0.5%MAX VGS = -10V
0 0.5
0 1 2 3 4 0 10 20 30 40 50
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6 60
ID = -8.5A PULSE DURATION = 80 μ s
1.4 VGS = -10V 50 DUTY CYCLE = 0.5%MAX
ID = -8.5A
1.2 40
1.0 30 T J = 125 [o] C
0.8 20
TJ = 25 [o] C
0.6 10
-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE ( [o] C) -VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to
vs Junction Temperature Source Voltage
50 50
PULSE DURATION = 80 μ s V GS = 0V
DUTY CYCLE = 0.5%MAX 10
40
VDS = -5V TJ = 150 [o] C
1
30
TJ = 25 [o] C
0.1
20
TJ = 150 [o] C TJ = 25 [o] C
10 0.01 TJ = -55 [o] C
TJ = -55 [o] C
0 0.001
1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)
NORMALIZED
DRAIN CURRENT (A)
,
D
-I
DRAIN TO SOURCE ON-RESISTANCE
)
Ω
m
(
, DRAIN TO
NORMALIZED
rDS(on)
SOURCE ON-RESISTANCE
DRAIN TO SOURCE ON-RESISTANCE
, DRAIN CURRENT (A)
D
-I , REVERSE DRAIN CURRENT (A)
S
-I
**----- End of picture text -----**
**Figure 5. Transfer Characteristics** **Figure 6. Source to Drain Diode Forward Voltage vs Source Current** **www.onsemi.com** **3** **Typical Characteristics** TJ = 25°C unless otherwise noted **==> picture [467 x 566] intentionally omitted <==** **----- Start of picture text -----**
10 10000
ID = -8.5A
8 VDD = -10V Ciss
1000
6
VDD = -15V Coss
4
VDD = -20V 100 Crss
2 f = 1MHz
VGS = 0V
0 10
0 10 20 30 40 0.1 1 10 30
Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain
to Source Voltage
20 40
VGS = -10V
10
30
VGS = -4.5V
T J = 25 [o] C
20
10
TJ = 125 [o] C Limited by Package
R θ JC = 4oC/W
1 0
0.001 0.01 0.1 1 10 100 25 50 75 100 125 150
tAV, TIME IN AVALANCHE(ms) TC, Ambient TEMPERATURE (oC)
Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain
Switching Capability Current vs Case Temperature
100 10-4
V DS = 0V
10 10-5
100us
TJ = 125 [o] C
1ms
1 THIS AREA IS 10ms 10-6
LIMITED BY rDS(on) 100ms
0.1 SINGLE PULSE TRJ θ JA= MAX RATED= 125 [o] C/W 1 10sDC s 10-7 TJ = 25 [o] C
T A = 25 [o] C
0.01 10-8
0.01 0.1 1 10 100 0 5 10 15 20 25 30
-VDS, DRAIN TO SOURCE VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE(V)
Figure 11. Forward Bias Safe Forward Bias Safe Figure 12. Igss vs Vgss
CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE(V)
GS
-V
DRAIN CURRENT (A)
,
I- D
, AVALANCHE CURRENT(A)
AS
-I
, DRAIN CURRENT (A)
D
-I
GATE LEAKAGE CURRENT(A)
g,
-I
**----- End of picture text -----**
**Figure 11. Forward Bias Safe Forward Bias Safe Operating Area** **www.onsemi.com 4** **Typical Characteristics** TJ = 25°C unless otherwise noted **==> picture [470 x 399] intentionally omitted <==** **----- Start of picture text -----**
100
V GS = -10V
10 SINGLE PULSE
R θ JA = 125 [o] C/W
T A = 25 [o] C
1
0.5
10-3 10-2 10-1 1 10 100 1000
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1 P DM
0.05
0.02
0.1 0.01 t 1
t2
NOTES:
Z θJA (t) = r(t) x R θJA
SINGLE PULSE R θJA = 125 °C/W
Peak T J = P DM x Z θJA (t) + T A
Duty Cycle, D = t1 / t2
0.01
10-3 10-2 10-1 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Transient Thermal Response Curve
, PEAK TRANSIENT POWER (W)
(PK)
P
THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE TRANSIENT
**----- End of picture text -----**
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