# Power MOSFET, P Channel, 150 V, 3 A, 1.5 ohm, Power 33, Surface Mount

![Product image](https://novapart.co/image/farnell:1324795/)

**URL**: https://novapart.co/products/FDMC2523P/power-mosfet-p-channel-150-v-3-a-15-ohm-33-surface
**SKU**: FDMC2523P
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7890
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.8V; Power Dissipation

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 42W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | Power 33 |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3A |
| Drain Source On State Resistance | 1.5ohm |
| Gate Source Threshold Voltage Max | 3.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1324795/)

## **Is Now Part of** 

**To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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## **FDMC2523P P-Channel QFET[®]** 

## **-150V, -3A, 1.5** Ω 

## **Features** 

Max rDS(on) = 1.5Ω at VGS = -10V, ID = -1.5A Low Crss ( typical 10pF) Fast Switching Low gate charge ( typical 6.2 nC ) Improved dv / dt capability RoHS Compliant 

## **General Description** 

These  P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. 

## **Application** 

Active Clamp Switch 

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Top Bottom<br>Pin 1<br>S D<br>G<br>S<br>S<br>S S D<br>S D<br>D<br>D<br>‘. D D G =n ay ti D<br>MLP 3.3x3.3<br>**----- End of picture text -----**<br>


**MOSFET Maximum Ratings** TA = 25°C unless otherwise noted 

|**MOSFET Maximum Ratings**|**MOSFET Maximum Ratings  **TA = 25°C unless otherwise notedA = 25°C unless otherwise noted= 25°C unless otherwise noted|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Ratings**|**Units**|
|VDS|Drain to Source Voltage|-150|V|
|VGS|Gate to Source Voltage|±30|V|
|ID|Drain Current   -Continuous              TC = 25°C|-3|A|
||-Continuous               TC = 100°C|-1.8||
||-Pulsed|-12||
|PD|Power Dissipation(SteadyState)TC = 25°C|42|W|
|EAS|Single Pulse Avalanche Energy<br> (Note 5)|3.3|mJ|
|TJ, TSTG|Operatingand Storage Junction Temperature Range|-55 to +150|°C|
|TL|Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds|300|°C|
|dv/dt|Peak Diode Recoverydv/dt<br> (Note 2)|-5|V/ns|



|~~_——~~||||||
|---|---|---|---|---|---|
|**Device Marking**<br>~~_——~~|**Device**|**Package**|**Reel Size**|**Tape Width**|**Quantity**|
|2523P<br>~~_——~~|FDMC2523P|MLP 3.3x3.3|13 ’’|12 mm|3000 units|



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www.fairchildsemi.com 

©2012 Fairchild Semiconductor Corporation FDMC2523P Rev.1.4 

## **Electrical Characteristics** TJ = 25°C unless otherwise noted 

|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= -250μA, VGS= 0V<br>ΔBVDSS<br>ΔTJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= -250μA, referenced to 25°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= -150V, VGS= 0V<br>TJ= 125°C<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±30V, VDS = 0V<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= -250μA<br>ΔVGS(th)<br>ΔTJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= -250μA, referenced to 25°C|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= -250μA, VGS= 0V<br>ΔBVDSS<br>ΔTJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= -250μA, referenced to 25°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= -150V, VGS= 0V<br>TJ= 125°C<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±30V, VDS = 0V<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= -250μA<br>ΔVGS(th)<br>ΔTJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= -250μA, referenced to 25°C|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= -250μA, VGS= 0V<br>ΔBVDSS<br>ΔTJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= -250μA, referenced to 25°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= -150V, VGS= 0V<br>TJ= 125°C<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±30V, VDS = 0V<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= -250μA<br>ΔVGS(th)<br>ΔTJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= -250μA, referenced to 25°C||**Min**<br>-150<br>-3|**Typ**<br>-138<br>-3.8<br>6||**Max**<br>-1<br>-10<br>±100<br>-5|**Units**<br>V<br>mV/°C<br>μA<br>nA<br>V<br>mV/°C|
|---|---|---|---|---|---|---|---|---|
|rDS(on)|Static Drain to Source On Resistance<br>VGS= -10V,  ID= -1.5A<br>VGS= -10V,  ID= -1.5A , TJ= 125°C||||1.1<br>2.0||1.5<br>3.6|Ω|
|gFS|Forward Transconductance<br>VDS= -40V,  ID= -1.5A|= -1.5A(Note 4)|||1.4|||S|
|**Dynamic Characteristics**|||||||||
|Ciss<br>Coss|Input Capacitance<br>VDS= -25V, VGS= 0V,<br>f = 1MHz<br>Output Capacitance||||200<br>60||270<br>80|pF<br>pF|
|Crss|Reverse Transfer Capacitance||||10||15|pF|
|Rg|Gate Resistance<br>f = 1MHz|||0.1|7.5||15|Ω|
|**Switching Characteristics**|**Switching Characteristics**||||||||
|td(on)<br>tr<br>td(off)|Turn-On DelayTime<br>VDD= -75V, ID= -3A<br>VGS= -10V, RGEN= 25Ω<br>  (Note 3,4)<br>Rise Time<br>Turn-Off DelayTime||||15<br>11<br>19||27<br>20<br>35|ns<br>ns<br>ns|
|tf|Fall Time||||13||24|ns|
|Qg|Total Gate Charge<br>VGS=  -10V||||6.2||9|nC|
|Qgs<br>Qgd|VDD= -75V<br>ID= -3A<br>   (Note 3,4)<br>Gate to Source Gate Charge<br>Gate to Drain “Miller” Charge||||1.4<br>3.3|||nC<br>nC|
|**Drain-Source Diode Characteristics**|||||||||
|IS|Maximum continuous Drain - Source Diode Forward Current||||||-3|A|
|ISM|Maximum Pulse Drain - Source Doide Forward Current||||||-12|A|
|VSD|Source to Drain Diode  Forward Voltage<br>VGS = 0V, IS = -3.0A||||-1.8||-5|V|
|trr|Reverse RecoveryTime<br>IF= -3.0A, di/dt = 100A/μs||||93|||ns|
|Qrr|(Note 3)<br>Reverse RecoveryCharge|(Note 3)|||0.27|||μC|
|**Notes:**|||||||||
|**1:** RθJAis the sum of the junction-to-case and case-to- ambient  thermal resistance where the case thermal reference is defined  as the solder mounting surface of the drain pins.|is the sum of the junction-to-case and case-to- ambient  thermal resistance where the case thermal reference is defined  as the solder mounting surface of the drain pins.|||is the sum of the junction-to-case and case-to- ambient  thermal resistance where the case thermal reference is defined  as the solder mounting surface of the drain pins.||is the sum of the junction-to-case and case-to- ambient  thermal resistance where the case thermal reference is defined  as the solder mounting surface of the drain pins.|||
|RθJCis guaranteed by design  while RθCAis determined by the user's board design.|||||||||



a. 60°C/W when mounted  on a 1 in[2 ] pad of  2 oz  copper 

b.135°C/W when mounted on  a minimum pad of 2 oz copper 

- **2:** ISD < -3A, dI/dt < 300A/us, VDD < BVDSS, Starting TJ = 25 ° C 

- **3:** Pulse Test: Pulse Width < 30 0 μs, Duty cycle < 2.0%. 

- **4:** Essentially independent of operating temperature. 

- **5:** EAS of 3.3 mJ is based on starting TJ = 25 °C; P-ch: L = 3 mH, IAS = -1.5 A, VDD = -150 V, VGS = -10 V. 

www.fairchildsemi.com 

**2** 

FDMC2523P Rev.1.4 

## **Typical Characteristics** TJ = 25°C unless otherwise noted 

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3.0 1.6<br>VGS = -10V PULSE DURATION = 300 μ s PULSE DURATION = 300 μ s<br>2.5 DUTY CYCLE = 2.0%MAX VGS = -6V DUTY CYCLE = 2.0%MAX<br>VGS =  -8V 1.4<br>2.0 V GS  =  -7V<br>1.5 V GS  = -9V 1.2 VGS = -7V VGS = -8V<br>1.0 VGS = -9V<br>1.0<br>VGS =  -6V<br>0.5<br>VGS = -10V<br>0.0 0.8<br>0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A)<br>Figure 1.  On-Region Characteristics Figure 2.  Normalized On-Resistance                                          Normalized On-Resistance<br>vs Drain Current and Gate Voltage<br>2.1 4.0<br> ID = -3AD = -3A = -3A PULSE DURATION = 300 μ s<br>1.8 V GS  = -10V-10V10V 3.5 DUTY CYCLE = 2.0%MAX<br>IDD = -0.75A<br>1.5 3.0<br>1.2 2.5<br>TJJ = 125 [[o]] C<br>0.9 2.0<br>0.6 1.5<br>TJJ = 25 [[o]] C<br>0.3 1.0<br>-50 -25 0 25 50 75 100 125 150 5 6 7 8 9 10<br>TJ, JUNCTION TEMPERATURE (J, JUNCTION TEMPERATURE (, JUNCTION TEMPERATURE (( [[o]] C)) -VGS, GATE TO SOURCE VOLTAGE (V)GS, GATE TO SOURCE VOLTAGE (V), GATE TO SOURCE VOLTAGE (V)<br>Figure 3.  Normalized  On- Resistance                                         Figure 4.   On-Resistance vs  Gate to                                  On-Resistance vs  Gate to<br>vs Junction Temperature Source Voltage<br>3.0 10<br>VGSGS = 0V<br>PULSE DURATION = 300 μ s<br>2.5 DUTY CYCLE = 2.0%MAX 1<br>2.0 VDDDD = -5V TJJ = 125 [[o]] C<br>0.1<br>1.5<br>TJ = 25J = 25 = 25 [[o]] C<br>TJJ = 125 [[o]] C 0.01<br>1.0<br>0.5 TJ = 25J = 25 = 25 [[o]] C 1E-3 TJ = -55J = -55 = -55 [[o]] C<br>TJ = -55J = -55 = -55 [[o]] C<br>0.0 1E-4<br>2 3 4 5 6 7 8 0.0 0.5 1.0 1.5 2.0 2.5<br>-VGS, GATE TO SOURCE VOLTAGE (V)GS, GATE TO SOURCE VOLTAGE (V), GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)SD, BODY DIODE FORWARD VOLTAGE (V), BODY DIODE FORWARD VOLTAGE (V)<br>NORMALIZED<br>, DRAIN CURRENT (A)<br>D<br>- I<br>DRAIN TO SOURCE ON-RESISTANCE<br>)<br>Ω<br>(<br>, DRAIN TO<br>NORMALIZED rDS(on)DS(on)<br>SOURCE ON-RESISTANCE<br> DRAIN TO SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)<br>D<br>- I<br>, REVERSE DRAIN CURRENT (A)<br>S<br>- I<br>**----- End of picture text -----**<br>


**Figure 2.  Normalized On-Resistance                                          Normalized On-Resistance vs Drain Current and Gate Voltage** 

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2.1 4.0<br> ID = -3AD = -3A = -3A PULSE DURATION = 300 μ s<br>1.8 V GS  = -10V-10V10V 3.5 DUTY CYCLE = 2.0%MAX<br>IDD = -0.75A<br>1.5 3.0<br>1.2 2.5<br>TJJ = 125 [[o]] C<br>0.9 2.0<br>0.6 1.5<br>TJJ = 25 [[o]] C<br>0.3 1.0<br>-50 -25 0 25 50 75 100 125 150 5 6 7 8 9 10<br>TJ, JUNCTION TEMPERATURE (J, JUNCTION TEMPERATURE (, JUNCTION TEMPERATURE (( [[o]] C)) -VGS, GATE TO SOURCE VOLTAGE (V)GS, GATE TO SOURCE VOLTAGE (V), GATE TO SOURCE VOLTAGE (V)<br>Figure 3.  Normalized  On- Resistance                                         Figure 4.   On-Resistance vs  Gate to                                  On-Resistance vs  Gate to<br>vs Junction Temperature Source Voltage<br>3.0 10<br>VGSGS = 0V<br>PULSE DURATION = 300 μ s<br>2.5 DUTY CYCLE = 2.0%MAX 1<br>2.0 VDDDD = -5V TJJ = 125 [[o]] C<br>0.1<br>1.5<br>TJ = 25J = 25 = 25 [[o]] C<br>TJJ = 125 [[o]] C 0.01<br>1.0<br>0.5 TJ = 25J = 25 = 25 [[o]] C 1E-3 TJ = -55J = -55 = -55 [[o]] C<br>TJ = -55J = -55 = -55 [[o]] C<br>0.0 1E-4<br>2 3 4 5 6 7 8 0.0 0.5 1.0 1.5 2.0 2.5<br>-VGS, GATE TO SOURCE VOLTAGE (V)GS, GATE TO SOURCE VOLTAGE (V), GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)SD, BODY DIODE FORWARD VOLTAGE (V), BODY DIODE FORWARD VOLTAGE (V)<br>Figure 5.  Transfer Characteristics Figure 6.    Source to Drain  Diode<br>Forward Voltage vs Source Current<br>)<br>Ω<br>(<br>, DRAIN TO<br>NORMALIZED rDS(on)DS(on)<br>SOURCE ON-RESISTANCE<br> DRAIN TO SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)<br>D<br>- I<br>, REVERSE DRAIN CURRENT (A)<br>S<br>- I<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

**3** 

FDMC2523P Rev.1.4 

## **Typical Characteristics** TJ = 25°C unless otherwise noted 

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10 1000<br>ID = -3A VDD = -50V<br>8 VDD = -75V Ciss<br>6 VDD = -100V 100<br>Coss<br>4<br>10<br>Crss<br>2<br>f = 1MHz<br>V GS  = 0V<br>0 1<br>0 2 4 6 8 0 25 50 75 100 125 150<br>Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7.  Gate Charge Characteristics Figure 8.  Capacitance vs Drain<br>to Source Voltage<br>6 40<br>10 rDS(on) LIMITED<br>TJ = 25 [o] C 100us<br>1<br>1ms<br>10ms<br>0.1<br>100ms<br>1 T J  = 125 [o] C SINGLE PULSE 1s<br>0.01 TJ = MAX RATED 10s<br>R θ JA = 135oC/W DC<br>TA = 25 [o] C<br>0.510-2 10-1 100 101 20 1E-3 1 10 100 400<br>tAV, TIME IN AVALANCHE( μ s) VDS, DRAIN to SOURCE VOLTAGE (V)<br>Figure 9. Unclamped Inductive                                  Figure 10.  Forward Bias Safe<br>Switching Capability Operating Area<br>500<br>100 T A  = 25 [o] C<br>FOR TEMPERATURES<br>ABOVE 25 [o] C DERATE PEAK<br>CURRENT AS FOLLOWS:<br>10 I = I25  150 --------------------- 125 – T A -<br>SINGLE PULSE<br>1 R θ JA = 135 [o] C/W<br>0.5<br>10-4 10-3 10-2 10-1 100 101 102 103<br>t, PULSE WIDTH (s)<br>Figure 11.  Single  Pulse Maximum Power  Dissipation<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLTAGE(V)<br>GS<br>-V<br>, AVALANCHE CURRENT(A) , DRAIN CURRENT (A)D<br>IAS  I<br>, PEAK TRANSIENT POWER (W)P)(PK<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

**4** 

FDMC2523P Rev.1.4 

**==> picture [447 x 208] intentionally omitted <==**

**----- Start of picture text -----**<br>
Typical Characteristics  TJ = 25°C unless otherwise noted<br>2<br>1<br>DUTY CYCLE-DESCENDING ORDER<br>D = 0.5<br>      0.2<br>0.1       0.1 PDM<br>      0.05<br>      0.02<br>      0.01 t 1<br>t 2<br>0.01 NOTES:<br>Z θJA (t) = r(t) x R θJA<br>SINGLE PULSE R θJA  = 135 °C/W<br>Peak T J  = P DM  x Z θJA (t) + T A<br>Duty Cycle, D = t1 / t2<br>0.001<br>10-4 10-3 10-2 10-1 1 10 102 103<br>t, RECTANGULAR PULSE DURATION (s)<br>Figure 12.  Transient Thermal Response Curve<br>THERMAL RESISTANCE<br>r(t), NORMALIZED EFFECTIVE TRANSIENT<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
FDMC2523P Rev.1.4<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
www.fairchildsemi.com<br>**----- End of picture text -----**<br>


**5** 

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**----- Start of picture text -----**<br>
0.05 C 3.30 A a B<br>2X<br>3.30<br>Ma<br>0.05 C<br>PIN#1 IDENT<br>TOP VIEW li ,<br>2X<br>**----- End of picture text -----**<br>


0.10 C 21 0.75+0.05 0.08 C O ~~T~~[TT] ~~tooo~~ 0.025+0.025 SIDE VIEW ct C SEATING PLANE 

**==> picture [275 x 247] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.27+0.05<br>(0.50)4X<br> PIN #1 IDENT (0.79)<br>1  ab 4<br>(0.35)<br>(1.15)<br>p ea |<br>| = 3.3020.05<br>R0.15<br>)<br>0.30+0.05(3X) ‘ | 2.00+0.05<br>|<br>8 5<br>0.65 Us Us ff il 0.35+0.05(8X)<br>0.10 C A B<br>- 1.95<br>0.05 C<br>BOTTOM VIEW<br>**----- End of picture text -----**<br>


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(3.40)<br>2.37<br>8 — 5 |<br>0.45(4X)<br>|<br>2.15<br>(1.70)<br>(0.40)<br>(0.65) KEEP OUT<br>AREA<br>0.70(4X)<br>O 1  O o 4<br>0.65<br>0.42(8X)<br>1.95<br>|<br>**----- End of picture text -----**<br>


## RECOMMENDED LAND PATTERN 

## NOTES: 

- A. DOES NOT CONFORM TO JEDEC REGISTRATION MO-229 

- B.  DIMENSIONS ARE IN MILLIMETERS. 

- C.  DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 2009. 

- D.  LAND PATTERN RECOMMENDATION IS EXISTING INDUSTRY LAND PATTERN. 

- E.  DRAWING FILENAME: MKT-MLP08Srev3. 

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**1** 



## Links

- [View this product on Novapart](https://novapart.co/products/FDMC2523P/power-mosfet-p-channel-150-v-3-a-15-ohm-33-surface)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/on-semiconductor/fdmc2523p/mosfet-p-super33/dp/1324795)
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