# Power MOSFET, N Channel, 80 V, 64 A, 6800 µohm, QFN, Surface Mount ![Product image](https://novapart.co/image/farnell:2895665RL/) **URL**: https://novapart.co/products/FDMC007N08LCDC/power-mosfet-n-channel-80-v-64-a-6800-ohm-qfn **SKU**: FDMC007N08LCDC **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €1.4300 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0051ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Powe ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 8Pins | | Channel Type | N Channel | | Product Range | PowerTrench | | Qualification | - | | Power Dissipation | 57W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | QFN | | Drain Source Voltage Vds | 80V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 64A | | Drain Source On State Resistance | 6800µohm | | Gate Source Threshold Voltage Max | 2.5V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2895665RL/) ## MOSFET - N‐Channel Shielded Gate ® POWERTRENCH 80 V, 64 A, 6.8 m Q ## FDMC007N08LCDC ## **General Description** This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. ## **Features** - Shielded Gate MOSFET Technology - Max RDS(on) = 6.8 m at VGS = 10 V, ID = 22 A - • Max RDS(on) = 11.1 mDS(on) = 11.1 m = 11.1 m | at VGS = 4.5 V, IDGS = 4.5 V, ID = 4.5 V, IDD = 18 A • 5 V Drive Capable • 50% Lower Qrr than Other MOSFET Suppliers • Lowers Switching Noise/EMI Q - Max RDS(on) = 11.1 mDS(on) = 11.1 m = 11.1 m | at VGS = 4.5 V, IDGS = 4.5 V, ID = 4.5 V, IDD = 18 A - MSL1 Robust Package Design - 100% UIL Tested ## **www.onsemi.com** **==> picture [190 x 163] intentionally omitted <==** **----- Start of picture text -----**
ee VDS RDS(ON) ee MAX eee ID MAX
80 V 6.8 m @ 10 V 22 A
11.1 m @ 4.5 V
eee
S (1, 2, 3)
G (4)
:
D (5, 6, 7, 8)
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N-CHANNEL MOSFET
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- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Applications** - Primary DC−DC MOSFET - Synchronous Rectifier in DC−DC and AC−DC - Motor Drive - Solar **==> picture [95 x 86] intentionally omitted <==** **----- Start of picture text -----**
Pin 1
Top Bottom
Dual Cool 33
(PQFN8)
CASE 483AY
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**MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted) |**MAXIMUM RATINGS**|**MAXIMUM RATINGS**(TA = 25A = 25= 25°C unless otherwise noted)|C unless otherwise noted)|| |---|---|---|---| |**Symbol**|**Parameter**|**Value**|**Unit**| |VDS|Drain to Source Voltage|80|V| |VGS|Gate to Source Voltage|±20|V| |ID|Drain Current:
Continuous, TC= 25°C (Note 5)
Continuous, TC= 100°C (Note 5)
Continuous, TA= 25°C (Note 1a)
Pulsed (Note 4)|64
41
15
339|A| |EAS|Single Pulse Avalanche Energy
(Note 3)|150|mJ| |PD|Power Dissipation:
TC= 25°C
TA= 25°C (Note 1a)|57
3|W| |TJ, TSTG|Operating and Storage Junction
Temperature Range|−55 to +150|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **MARKING DIAGRAM** **==> picture [62 x 7] intentionally omitted <==** **----- Start of picture text -----**
G S S S
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**==> picture [132 x 80] intentionally omitted <==** **----- Start of picture text -----**
&Z&3&K
7N08LDC
D D D D
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
7N08LDC = Specific Device Code
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## **ORDERING INFORMATION** See detailed ordering and shipping information on page 6 of this data sheet. Publication Order Number: **FDMC007N08LCDC/D** **1** © Semiconductor Components Industries, LLC, 2017 **June, 2021 − Rev. 3** **FDMC007N08LCDC** ## **THERMAL CHARACTERISTICS** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |R�JC|Thermal Resistance, Junction to Case|2.2|°C/W| |R�JA|Thermal Resistance, Junction to Ambient (Note 1a)|42|| **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**Symbol**|**Parameter**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |**OFF CHARACTERISTICS**||||||| |BVDSS|Drain to Source Breakdown Voltage|ID= 250�A, VGS= 0 V|80|||V| |�BVDSS
/�TJ|Breakdown Voltage Temperature
Coefficient|ID= 250�A, referenced to 25°C||67||mV/°C| |IDSS|Zero Gate Voltage Drain Current|VDS= 64 V, VGS= 0 V|||1|�A| |IGSS|Gate to Source Leakage Current|VGS=±20 V, VDS= 0 V|||±100|nA| |**ON CHARACTERISTICS**||||||| |VGS(th)|Gate to Source Threshold Voltage|VGS= VDS, ID= 130�A|1.0|1.5|2.5|V| |�VGS(th)
/�TJ|Gate to Source Threshold Voltage
Temperature Coefficient|ID= 130�A, referenced to 25°C||−5.2||mV/°C| |RDS(on)|Static Drain to Source On Resistance|VGS= 10 V, ID= 22 A||5.1|6.8|m�| |||VGS= 4.5 V, ID= 18 A||7.3|11.1|| |||VGS= 10 V, ID= 22 A, TJ= 125°C||9.5|12.5|| |gFS|Forward Transconductance|VDS= 5 V, ID= 22 A||80||S| |**DYNAMIC CHARACTERISTICS**||||||| |Ciss|Input Capacitance|VDS= 40 V, VGS= 0 V, f = 1 MHz||2195|3070|pF| |Coss|Output Capacitance|||521|730|pF| |Crss|Reverse Transfer Capacitance|||25|40|pF| |Rg|Gate Resistance||0.1|0.5|0.9|�| |**SWITCHING CHARACTERISTICS**||||||| |td(on)|Turn-On Delay Time|VDD= 40 V, ID= 22 A, VGS= 10 V,
RGEN= 6�||11|21|ns| |tr|Rise Time|||3|10|ns| |td(off)|Turn-Off Delay Time|||36|58|ns| |tf|Fall Time|||4|10|ns| |Qg|Total Gate Charge|VGS= 0 V to 10 V, VDD= 40 V,
ID= 22 A||31|44|nC| |||VGS= 0 V to 4.5 V, VDD= 40 V,
ID= 22 A||15|21|nC| |Qgs|Gate to Source Charge|VDD= 40 V, ID= 22 A||5||nC| |Qgd|Gate to Drain “Miller” Charge|VDD= 40 V, ID= 22 A||4||nC| |Qoss|Output Charge|VDD= 40 V, VGS= 0 V||29||nC| |Qsync|Total Gate Charge Sync|VDS= 0 V, ID= 22 A||28||nC| |**DRAIN-SOURCE DIODE CHARACTERISTICS**||||||| |VSD|Source to Drain Diode Forward Voltage|VGS= 0 V, IS= 2.5 A (Note 2)||0.7|1.2|V| |||VGS= 0 V, IS= 22 A (Note 2)||0.8|1.3|| |trr|Reverse Recovery Time|IF= 11 A, di/dt = 300 A/�s||18|32|ns| |Qrr|Reverse Recovery Charge|||24|38|nC| **www.onsemi.com** **2** **FDMC007N08LCDC** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) (continued) **Symbol Parameter Test Condition Min Typ Max Unit** ~~CD~~ **DRAIN-SOURCE DIODE CHARACTERISTICS** trr Reverse Recovery Time IF = 11 A, di/dt = 1000 A/ s 15 26 ns ~~ee~~ Qrr Reverse Recovery Charge 60 96 nC ~~a esee~~ Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ## **THERMAL CHARACTERISTICS** **Symbol Parameter Value Unit** ~~a~~ R JC Thermal Resistance, Junction to Case (Top Source) 6.0 ° C/W ~~aa~~ R JC Thermal Resistance, Junction to Case (Bottom Source) 2.2 ° C/W ~~a~~ R JA Thermal Resistance, Junction to Ambient (Note 1a) 42 ° C/W ~~a~~ R JA Thermal Resistance, Junction to Ambient (Note 1b) 105 ° C/W ~~a~~ R JA Thermal Resistance, Junction to Ambient (Note 1c) 29 ° C/W ~~a~~ R JA Thermal Resistance, Junction to Ambient (Note 1d) 40 ° C/W ~~a~~ R JA Thermal Resistance, Junction to Ambient (Note 1e) 19 ° C/W ~~a~~ R JA Thermal Resistance, Junction to Ambient (Note 1f) 23 ° C/W ~~a~~ R JA Thermal Resistance, Junction to Ambient (Note 1g) 30 ° C/W ~~a~~ R JA Thermal Resistance, Junction to Ambient (Note 1h) 79 ° C/W ~~a~~ R JA Thermal Resistance, Junction to Ambient (Note 1i) 17 ° C/W ~~a~~ R JA Thermal Resistance, Junction to Ambient (Note 1j) 26 ° C/W ~~a~~ R JA Thermal Resistance, Junction to Ambient (Note 1k) 12 ° C/W ~~a a~~ R JA Thermal Resistance, Junction to Ambient (Note 1l) 16 ° C/W NOTES: 1. R ~~8~~ JA is determined with the device mounted on a FR−4 board using a specified pad of 2 oz copper as shown below. R 8 JC is guaranteed by design while R 0 CA is determined by the user’s board design. **==> picture [172 x 100] intentionally omitted <==** **----- Start of picture text -----**
a) 42 ° C/W when mounted on
a 1 in [2] pad of 2 oz copper.
00000
00000
G DF DS SF SS
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G DF DS SF SS
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**==> picture [121 x 19] intentionally omitted <==** **----- Start of picture text -----**
b) 105 ° C/W when mounted on
a minimum pad of 2 oz copper.
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- c. Still air, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, 1 in[2] pad of 2 oz copper - d. Still air, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper - e. Still air, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in[2] pad of 2 oz copper - f. Still air, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper - g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper - h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper - i. 200FPM Airflow, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, 1 in[2] pad of 2 oz copper - j. 200FPM Airflow, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper - k. 200FPM Airflow, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in[2] pad of 2 oz copper - l. 200FPM Airflow, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 wu s, Duty cycle < 2.0%. 3. EAS of 150 mJ is based on starting TJ = 25 ° C; L = 3 mH, IAS = 10 A, VDD = 80 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 32 A. 4. Pulsed Id please refer to Figure 11 SOA graph for more details. 5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. **www.onsemi.com** **3** **FDMC007N08LCDC** ## **TYPICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) **==> picture [203 x 150] intentionally omitted <==** **----- Start of picture text -----**
200
VGS = 10 V
VGS = 8 V
VGS = 6 V
150
VGS = 4.5 V
100
VGS = 3.5 V
50
VGS = 3 V PULSE DURATION = 80 � s
DUTY CYCLE = 0.5% MAX
0
0 1 2 3 4 5
VDS, DRAIN TO SOURCE VOLTAGE (V)
, DRAIN CURRENT (A)
ID
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**Figure 1. On Region Characteristics** **==> picture [209 x 352] intentionally omitted <==** **----- Start of picture text -----**
2.0
1.8 ID = 22 A
VGS = 10 V
1.6
1.4
1.2
1.0
0.8
0.6
−75 −50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ( � C)
Figure 3. Normalized On-Resistance vs.
Junction Temperature
200
PULSE DURATION = 80 � s
DUTY CYCLE = 0.5% MAX
160 VDS = 5 V
120
80
TJ = 150 [o] C
40
TJ = 25 [o] C
TJ = −55 [o] C
0
1 2 3 4 5 6 7
VGS , GATE TO SOURCE VOLTAGE (V)
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
, DRAIN CURRENT (A)
ID
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**==> picture [210 x 555] intentionally omitted <==** **----- Start of picture text -----**
5
VGS = 3 V
VGS = 3.5 V
4
VGS = 4.5 V
3
VGS = 6 V
2
1 PULSE DURATION = 80 � s VGS = 8 V V GS = 10 V
DUTY CYCLE = 0.5% MAX
0
0 50 100 150 200
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance vs. Drain
Current and Gate Voltage
100
PULSE DURATION = 80 � s
DUTY CYCLE = 0.5% MAX
80
ID = 22 A
60
40
20 TJ = 125 [o] C
TJ = 25 [o] C
0
0 2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs. Gate to Source
Voltage
200
100 VGS = 0 V
10
T J = 150 [o] C
1
0.1 TJ = 25 [ o] C
0.01 TJ = −55 [o] C
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
) �
(m
DRAIN TO
DS(on),
R
SOURCE ON−RESISTANCE
, REVERSE DRAIN CURRENT (A)
IS
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**Figure 5. Transfer Characteristics** **Figure 6. Source to Drain Diode Forward Voltage vs. Source Current** **www.onsemi.com** **4** **FDMC007N08LCDC** ## **TYPICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) **==> picture [198 x 149] intentionally omitted <==** **----- Start of picture text -----**
10
ID = 22 A
8
VDD = 30 V
6
VDD = 40 V
4
VDD = 50 V
2
0
0 5 10 15 20 25 30
Qg, GATE CHARGE (nC)
, GATE TO SOURCE VOLTAGE (V)
GS
V
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**Figure 7. Gate Charge Characteristics** **==> picture [205 x 352] intentionally omitted <==** **----- Start of picture text -----**
100
TJ = 25 [ o] C
10
TJ = 100 [o] C
TJ = 125 [o] C
1
0.001 0.01 0.1 1 10 100
tAV , TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
500
100
10 � s
10
100 � s
THIS AREA IS
1 LIMITED BY r DS(on) 1 ms
SINGLE PULSE 10 ms
0.1 TJ = MAX RATED 100 ms/DC
R � JC = 2.2 [o] C/W CURVE BENT TO
TC = 25 [o] C MEASURED DATA
0.01
0.1 1 10 100 500
VDS , DRAIN to SOURCE VOLTAGE (V)
, AVALANCHE CURRENT (A)
IAS
, DRAIN CURRENT (A)
ID
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10000
Ciss
1000
Coss
100
Crss
10
f = 1 MHz
VGS = 0 V
1
0.1 1 10 80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs. Drain to Source Voltage
70
R � JC = 2.2 [o] C/W
56
VGS = 10 V
42
VGS = 4.5 V
28
14
0
25 50 75 100 125 150
TC, CASE TEMPERATURE ( � C)
CAPACITANCE (pF)
DRAIN CURRENT (A)
I,D
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**Figure 8. Capacitance vs. Drain to Source Voltage** **Figure 10. Maximum Continuous Drain Current vs. Case Temperature** **==> picture [209 x 149] intentionally omitted <==** **----- Start of picture text -----**
100000
SINGLE PULSE
R � JC = 2.2 [o] C/W
10000 TC = 25 [o] C
1000
100
10
10−5 10−4 10−3 10−2 10−1 1
t, PULSE WIDTH (sec)
PEAK TRANSIENT POWER (W)
(PK),
P
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**Figure 11. Forward Bias Safe Operating Area** **Figure 12. Single Pulse Maximum Power Dissipation** **www.onsemi.com** **5** **FDMC007N08LCDC** ## **TYPICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) **==> picture [436 x 164] intentionally omitted <==** **----- Start of picture text -----**
2
DUTY CYCLE−DESCENDING ORDER
1
D = 0.5
0.2 PDM
0.1 0.1
0.05
0.02 t1
0.01 t 2
NOTES:
0.01
SINGLE PULSE Z � JC(t) = r(t) x R � JC
R � JC = 2.2 [o] C/W
Peak TJ = PDM x Z � JC(t) + TC
Duty Cycle, D = t1 / t2
0.001
10−5 10−4 10−3 10−2 10−1 1
t, RECTANGULAR PULSE DURATION (sec)
THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE TRANSIENT
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**Figure 13. Junction-to-Case Transient Thermal Response Curve** ## **ORDERING INFORMATION** |**Device**|**Marking**|**Package**|**Reel Size**|**Tape Width**|**Quantity**| |---|---|---|---|---|---| |FDMC007N08LCDC|7N08LDC|Dual Cool�33 (PQFN8)
(Pb-Free / Halogen Free)|13″|12 mm|3000 Units| POWERTRENCH and DUAL COOL are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. **www.onsemi.com** **6** ## MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [93 x 29] intentionally omitted <==** **----- Start of picture text -----**
PQFN8 3.3X3.3, 0.65P
CASE 483AY
ISSUE A
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**==> picture [80 x 8] intentionally omitted <==** **----- Start of picture text -----**
DATE 08 SEP 2021
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## **DOCUMENT NUMBER:** ## **DESCRIPTION:** ## **98AON13674G** ## **PQFN8 3.3X3.3, 0.65P** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. ## **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba onsemi **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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