# Dual MOSFET, N Channel, 30 V, 4.8 A, 0.032 ohm ![Product image](https://novapart.co/image/farnell:2822534/) **URL**: https://novapart.co/products/FDMB3800N/dual-mosfet-n-channel-30-v-48-a-0032-ohm **SKU**: FDMB3800N **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Dual MOSFETs **Price**: €0.3720 **Stock**: 10+ ## Description Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltag ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 8Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Transistor Case Style | µFET | | Operating Temperature Max | 150°C | | Power Dissipation N Channel | 1.6W | | Power Dissipation P Channel | - | | Drain Source Voltage Vds N Channel | 30V | | Drain Source Voltage Vds P Channel | - | | Continuous Drain Current Id N Channel | 4.8A | | Continuous Drain Current Id P Channel | - | | Drain Source On State Resistance N Channel | 0.032ohm | | Drain Source On State Resistance P Channel | - | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2822534/) ## **FDMB3800N Dual N-Channel PowerTrench[®] MOSFET** ## **30V, 4.8A, 40m** Ω ## **Features** Max rDS(on) = 40mΩ at VGS = 10V, ID = 4.8A Max rDS(on) = 51mΩ at VGS = 4.5V, ID = 4.3A Fast switching speed Low gate Charge High performance trench technology for extremely low rDS(on) High power and current handling capability. RoHS Compliant ## **General Description** These N-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. **==> picture [141 x 81] intentionally omitted <==** **----- Start of picture text -----**
Q2
D2 5 4 G2
D2 6 3 S2
Q1
D1 7 2 G1
D1 8 1 S1
**----- End of picture text -----**
**MicroFET 3X1.9** **MOSFET Maximum Ratings** TA = 25°C unless otherwise noted |**MOSFET Maximum Ratings**|**MOSFET Maximum Ratings **TA = 25°C unless otherwise notedA = 25°C unless otherwise noted= 25°C unless otherwise noted||| |---|---|---|---| |**Symbol**|**Parameter**|**Ratings**|**Units**| |VDS|Drain to Source Voltage|30|V| |VGS|Gate to Source Voltage|±20|V| |ID|Drain Current
-Continuous
TA= 25°C
(Note 1a)|4.8|A| ||-Pulsed|9|| |PD|Power Dissipation
TA= 25°C
Note 1a)|1.6|W| ||Power Dissipation
TA= 25°C
(Note 1b)|0.75|| |TJ, TSTG|Operatingand Storage Junction Temperature Range|-55 to +150|°C| **Thermal Characteristics** RθJA Thermal Resistance, Junction to Ambient (Note 1a) 80 °C/W ~~se~~ RθJA Thermal Resistance, Junction to Ambient (Note 1b) 165 ~~_~~ **Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity** 3800 FDMB3800N MicroFET3X1.9 7’’ 8mm 3000 units ~~eeee ee ee~~ ©2012 Semiconductor Components Industries, LLC. **1** October-2017, Rev.3 Publication Order Number: FDMB3800N/D **Electrical Characteristics** TJ = 25°C unless otherwise noted |**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= 250μA, VGS= 0V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= 250μA, referenced to 25°C
24
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 24V,
1
μA
VGS= 0V
TJ= 55°C
10
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250μA
1
1.9
3
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250μA, referenced to 25°C
-4
mV/°C
rDS(on)
Drain to Source On Resistance
VGS= 10V, ID= 4.8A
32
40
mΩ
VGS= 4.5V, ID= 4.3A
41
51
VGS= 10V, ID= 4.8A, TJ= 125°C
43
61
gFS
Forward Transconductance
VDS= 5V, ID= 4.8A
14
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS=15V, VGS= 0V,
f = 1MHz
350
465
pF
Coss
Output Capacitance
90
120
pF
Crss
Reverse Transfer Capacitance
40
60
pF
Rg
Gate Resistance
f = 1MHz
3
Ω
~~a~~
~~BO~~
~~I GO~~
~~— fo ee~~
~~ee~~
~~ee ee~~
~~a~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= 250μA, VGS= 0V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= 250μA, referenced to 25°C
24
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 24V,
1
μA
VGS= 0V
TJ= 55°C
10
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250μA
1
1.9
3
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250μA, referenced to 25°C
-4
mV/°C
rDS(on)
Drain to Source On Resistance
VGS= 10V, ID= 4.8A
32
40
mΩ
VGS= 4.5V, ID= 4.3A
41
51
VGS= 10V, ID= 4.8A, TJ= 125°C
43
61
gFS
Forward Transconductance
VDS= 5V, ID= 4.8A
14
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS=15V, VGS= 0V,
f = 1MHz
350
465
pF
Coss
Output Capacitance
90
120
pF
Crss
Reverse Transfer Capacitance
40
60
pF
Rg
Gate Resistance
f = 1MHz
3
Ω
~~a~~
~~BO~~
~~I GO~~
~~— fo ee~~
~~ee~~
~~ee ee~~
~~a~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= 250μA, VGS= 0V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= 250μA, referenced to 25°C
24
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 24V,
1
μA
VGS= 0V
TJ= 55°C
10
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250μA
1
1.9
3
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250μA, referenced to 25°C
-4
mV/°C
rDS(on)
Drain to Source On Resistance
VGS= 10V, ID= 4.8A
32
40
mΩ
VGS= 4.5V, ID= 4.3A
41
51
VGS= 10V, ID= 4.8A, TJ= 125°C
43
61
gFS
Forward Transconductance
VDS= 5V, ID= 4.8A
14
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS=15V, VGS= 0V,
f = 1MHz
350
465
pF
Coss
Output Capacitance
90
120
pF
Crss
Reverse Transfer Capacitance
40
60
pF
Rg
Gate Resistance
f = 1MHz
3
Ω
~~a~~
~~BO~~
~~I GO~~
~~— fo ee~~
~~ee~~
~~ee ee~~
~~a~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= 250μA, VGS= 0V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= 250μA, referenced to 25°C
24
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 24V,
1
μA
VGS= 0V
TJ= 55°C
10
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250μA
1
1.9
3
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250μA, referenced to 25°C
-4
mV/°C
rDS(on)
Drain to Source On Resistance
VGS= 10V, ID= 4.8A
32
40
mΩ
VGS= 4.5V, ID= 4.3A
41
51
VGS= 10V, ID= 4.8A, TJ= 125°C
43
61
gFS
Forward Transconductance
VDS= 5V, ID= 4.8A
14
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS=15V, VGS= 0V,
f = 1MHz
350
465
pF
Coss
Output Capacitance
90
120
pF
Crss
Reverse Transfer Capacitance
40
60
pF
Rg
Gate Resistance
f = 1MHz
3
Ω
~~a~~
~~BO~~
~~I GO~~
~~— fo ee~~
~~ee~~
~~ee ee~~
~~a~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= 250μA, VGS= 0V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= 250μA, referenced to 25°C
24
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 24V,
1
μA
VGS= 0V
TJ= 55°C
10
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250μA
1
1.9
3
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250μA, referenced to 25°C
-4
mV/°C
rDS(on)
Drain to Source On Resistance
VGS= 10V, ID= 4.8A
32
40
mΩ
VGS= 4.5V, ID= 4.3A
41
51
VGS= 10V, ID= 4.8A, TJ= 125°C
43
61
gFS
Forward Transconductance
VDS= 5V, ID= 4.8A
14
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS=15V, VGS= 0V,
f = 1MHz
350
465
pF
Coss
Output Capacitance
90
120
pF
Crss
Reverse Transfer Capacitance
40
60
pF
Rg
Gate Resistance
f = 1MHz
3
Ω
~~a~~
~~BO~~
~~I GO~~
~~— fo ee~~
~~ee~~
~~ee ee~~
~~a~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= 250μA, VGS= 0V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= 250μA, referenced to 25°C
24
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 24V,
1
μA
VGS= 0V
TJ= 55°C
10
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250μA
1
1.9
3
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250μA, referenced to 25°C
-4
mV/°C
rDS(on)
Drain to Source On Resistance
VGS= 10V, ID= 4.8A
32
40
mΩ
VGS= 4.5V, ID= 4.3A
41
51
VGS= 10V, ID= 4.8A, TJ= 125°C
43
61
gFS
Forward Transconductance
VDS= 5V, ID= 4.8A
14
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS=15V, VGS= 0V,
f = 1MHz
350
465
pF
Coss
Output Capacitance
90
120
pF
Crss
Reverse Transfer Capacitance
40
60
pF
Rg
Gate Resistance
f = 1MHz
3
Ω
~~a~~
~~BO~~
~~I GO~~
~~— fo ee~~
~~ee~~
~~ee ee~~
~~a~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= 250μA, VGS= 0V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= 250μA, referenced to 25°C
24
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 24V,
1
μA
VGS= 0V
TJ= 55°C
10
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250μA
1
1.9
3
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250μA, referenced to 25°C
-4
mV/°C
rDS(on)
Drain to Source On Resistance
VGS= 10V, ID= 4.8A
32
40
mΩ
VGS= 4.5V, ID= 4.3A
41
51
VGS= 10V, ID= 4.8A, TJ= 125°C
43
61
gFS
Forward Transconductance
VDS= 5V, ID= 4.8A
14
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS=15V, VGS= 0V,
f = 1MHz
350
465
pF
Coss
Output Capacitance
90
120
pF
Crss
Reverse Transfer Capacitance
40
60
pF
Rg
Gate Resistance
f = 1MHz
3
Ω
~~a~~
~~BO~~
~~I GO~~
~~— fo ee~~
~~ee~~
~~ee ee~~
~~a~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= 250μA, VGS= 0V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= 250μA, referenced to 25°C
24
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 24V,
1
μA
VGS= 0V
TJ= 55°C
10
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250μA
1
1.9
3
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250μA, referenced to 25°C
-4
mV/°C
rDS(on)
Drain to Source On Resistance
VGS= 10V, ID= 4.8A
32
40
mΩ
VGS= 4.5V, ID= 4.3A
41
51
VGS= 10V, ID= 4.8A, TJ= 125°C
43
61
gFS
Forward Transconductance
VDS= 5V, ID= 4.8A
14
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS=15V, VGS= 0V,
f = 1MHz
350
465
pF
Coss
Output Capacitance
90
120
pF
Crss
Reverse Transfer Capacitance
40
60
pF
Rg
Gate Resistance
f = 1MHz
3
Ω
~~a~~
~~BO~~
~~I GO~~
~~— fo ee~~
~~ee~~
~~ee ee~~
~~a~~| |---|---|---|---|---|---|---|---| |**Switching Characteristics**|||||||| |td(on)
Turn-On DelayTime
tr
Rise Time
td(off)
Turn-Off DelayTime|VDD= 15V, ID= 1A
VGS= 10V, RGEN= 6Ω|||8
5
21|16
10
34||ns
ns
ns| |tf
Fall Time||||2|10||ns| |Qg(TOT)
Total Gate Charge at 5V|VGS= 0V to 5V VDD= 15V|||4|5.6||nC| |Qgs
Gate to Source Gate Charge|ID= 7.5A|||1.0|||nC| |Qgd
Gate to Drain “Miller” Charge||||1.5|||nC| |**Drain-Source Diode Characteristics**|||||||| |IS
Maximum Continuous Drain - Source Diode Forward Current|||||1.25||A| |VSD
Source to Drain Diode Forward Voltage|VGS = 0V, IS = 1.25A(Note 2)|||0.8|1.2||V| |trr
Reverse RecoveryTime
Qrr
Reverse RecoveryCharge|IF= 4.8A, di/dt = 100A/μs|||17
7|||ns
nC| **Notes:** - **1:** RθJA is determined with the device mounted on a 1in[2] pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 80°C/W when mounted on b. 165°C/W when mounted on a a 1 in[2 ] pad of 2 oz copper minimum pad of 2 oz copper **2:** Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. **www.onsemi.com** **2** ## **Typical Characteristics** TJ = 25°C unless otherwise noted **==> picture [457 x 552] intentionally omitted <==** **----- Start of picture text -----**
10
2.8
VGS = 10V 4.5V
2.6
6.0V 3.5V
8 2.4 VGS = 3.0V
2.2
6 2
1.8
3.0V 3.5V
4 1.6
4.0V 4.5V 6.0V
1.4
2 1.2
2.5V
1
10V
0 0.8
0 0.25 0.5 0.75 1 1.25 0 2 4 6 8 10
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics Figure 2. Normalized On - Resistance
vs Drain Current and Gate Voltage
1.6 0.102
ID = 4.8A ID = 2.4A
VGS = 10V 0.092
1.4
0.082
1.2 0.072
0.062
1 TJ = 125 [o] C
0.052
0.042
0.8 TJ = 25 [o] C
0.032
0.6 0.022
-50 -25 0 25 50 75 100 125 150 2 3 4 5 6 7 8 9 10
TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On - Resistance Figure 4. On- Resistance vs Gate to
vs Junction Temperature Source Voltage
15 10
VDS = 5V TJ = -55 [o] C 125 [o] C25 [o] C V GS = 0V
12 1
T J = 125 [o] C
9 0.1
25 [o] C
6 0.01 -55 [o] C
3 0.001
0 0.0001
1.5 2 2.5 3 3.5 4 0 0.2 0.4 0.6 0.8 1 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
NORMALIZED
, DRAIN CURRENT (A)ID
DRAIN-SOURCE ON-RESISTANCE
NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DRAIN TO SOURCE ON-RESISTANCE (OHM)
, DRAIN CURRENT (A)ID
, REVERSE DRAIN CURRENT (A)IS
**----- End of picture text -----**
**Figure 5. Transfer Characteristics** **Figure 6. Source to Drain Diode Forward Voltage vs Source Current** **www.onsemi.com 3** **Typical Characteristics** TJ = 25°C unless otherwise noted **==> picture [456 x 576] intentionally omitted <==** **----- Start of picture text -----**
10 600
f = 1MHz
ID = 4.8A VDS = 10V 15V VGS = 0 V
500
8
20V
400 C iss
6
300
4
200
Coss
2
100
Crss
0 0
0 1 2 3 4 5 6 7 8 0 4 8 12 16 20
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain
to Source Voltage
100 6
5
r DS(on) LIMIT
10
100us 4 VGS = 10V
1ms
1 3 V GS = 4.5V
10ms
V GS = 10V 100ms 2 RθJA = 80°C/W
0.1 SINGLE PULSE
RθJA = 165 [o] C/W 1s 1
TJ = 25 [o] C 10sDC
0.01 0
0.1 1 10 100 25 50 75 100 125 150
VDS, DRAIN-SOURCE VOLTAGE (V) TA, AMBIENT TEMPERATURE ( [o] C)
Figure 9. Forward Bias Safe Figure 10. Maximum Continuous Drain
Operating Area Current vs Ambient Temperature
180
SINGLE PULSE
150 RθJA = 165 ° C/W
TA= 25°C
120
90
60
30
0
0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE WIDTH (s)
Figure 11. Single Pulse Maximum Power Dissipation
CAPACITANCE (pF)
, GATE-SOURCE VOLTAGE (V)
GS
V
, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID
P(pk), PEAK TRANSIENT POWER (W)
**----- End of picture text -----**
**www.onsemi.com** **4** **==> picture [445 x 208] intentionally omitted <==** **----- Start of picture text -----**
Typical Characteristics TJ = 25°C unless otherwise noted
1
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01 P(pk)
t1
0.01 t 2
Peak TJ = TA + PDM *RθJA*ZθJA
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
, NORMALIZED THERMAL IMPEDANCE
θJA
Z
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