# Power MOSFET, P Channel, 30 V, 11 A, 0.011 ohm, PQFN, Surface Mount ![Product image](https://novapart.co/image/farnell:2929777/) **URL**: https://novapart.co/products/FDMA6676PZ/power-mosfet-p-channel-30-v-11-a-0011-ohm-pqfn **SKU**: FDMA6676PZ **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.3320 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 6Pins | | Channel Type | P Channel | | Product Range | PowerTrench | | Power Dissipation | 2.4W | | Transistor Mounting | Surface Mount | | Transistor Polarity | P Channel | | Power Dissipation Pd | 2.4W | | Rds(On) Test Voltage | 10V | | On Resistance Rds(On) | 0.011ohm | | Transistor Case Style | PQFN | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 11A | | Drain Source On State Resistance | 0.011ohm | | Gate Source Threshold Voltage Max | 2V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2929777/) ## **Is Now Part of** ## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [62 x 9] intentionally omitted <==** **----- Start of picture text -----**
February 2015
**----- End of picture text -----**
## **FDMA6676PZ** ## **Single P-Channel PowerTrench[® ] MOSFET** ## **-30 V, -11 A, 13.5 m** Ω ## **Features** Max rDS(on) = 13.5 mΩ @ VGS = -10 V 25V VGS Extended Operating Rating 30V VDS Blocking 2x2mm Form Factor Low Profile - 0.8 mm maximum Integrated Protection Diode RoHS Compliant Halogen Free ## **General Description** This device is an ultra low resistance P-Channel FET. It is designed for power line load switching applications and reverse polarity protection. It is especially optimized for voltage rails that can climb as high as 25V. Typical end systems include laptop computers, tablets and mobile phone. Applications include battery protection, input power line protection and charge path protection, including USB and other charge paths. The FDMA6676PZ has an enhanced VGS rating of 25V specifically designed to simplify installation. When used as reverse polarity protection, with gate tied to ground and drain tied to V input, it is designed to support operating input voltages that can raise as high as 25V without the need for external Zener protection on the gate. Its small 2x2x0.8 form factor make it an ideal part for mobile and space constrained applications. **==> picture [353 x 114] intentionally omitted <==** **----- Start of picture text -----**
Pin 1
D
D Bottom Drain Contact
G
--; i7- D
Drain D 1) 5
Source
D 2 | 15 D
D
D G aud33 "ai-- S
S
**----- End of picture text -----**
## **MicroFET 2X2 (Bottom View)** ## **MOSFET Maximum Ratings** TA = 25 °C unless otherwise noted |**Symbol**|**Parameter**||||**Ratings**|||**Units**| |---|---|---|---|---|---|---|---|---| |VDS|Drain to Source Voltage||||-30|||V| |VGS|Gate to Source Voltage||||±25|||V| |ID|Drain Current -Continuous
TA= 25 °C
-Pulsed||= 25 °C
(Note 1a)
(Note 3)||-11
-165|||A| |PD|Power Dissipation
TA= 25 °C
Power Dissipation
TA= 25 °C||= 25 °C
(Note 1a)
= 25 °C
(Note 1b)||2.4
0.9|||W| |TJ, TSTG|Operatingand Storage Junction Temperature Range||||-55 to +150|||°C| |**Thermal Characteristics**||||||||| |RθJA|Thermal Resistance, Junction to Ambient||(Note 1a)||52|||°C/W| |RθJA|Thermal Resistance, Junction to Ambient||(Note 1b)||145|||| |**Package Marking and Ordering Information**||||||||| |**Device Marking**
**Device**
**Package**|||**Reel Size**||**Tape Width**||**Quantity**|| |676|FDMA6676PZ
MicroFET 2X2||7 ”||12 mm||3000 units|| ## **Thermal Characteristics** ## **Package Marking and Ordering Information** **1** ©2015 Fairchild Semiconductor Corporation FDMA6676PZ Rev.C www.fairchildsemi.com ## **Electrical Characteristics** TJ = 25 °C unless otherwise noted |**Off Characteristics**
**On Characteristics**
**Dynamic Characteristics**
**Switching Characteristics**
**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
BVDSS
Drain to Source Breakdown Voltage
ID= -250μA, VGS= 0 V
-30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= -250μA, referenced to 25 °C
-19
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= -24 V, VGS = 0 V
-1
μA
IGSS
Gate to Source Leakage Current
VGS= ±25 V, VDS = 0 V
±10
μA
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= -250μA
-1.2
-2
-2.6
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= -250μA, referenced to 25 °C
5.9
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= -10 V, ID= -11 A
11
13.5
mΩ
VGS= -4.5 V, ID= -8 A
19
27
VGS= -10 V, ID= -11 A,
TJ= 125 °C
14.5
21
gFS
Forward Transconductance
VDD= -5 V, ID= -11 A
38
S
Ciss
Input Capacitance
VDS= -15 V, VGS= 0 V,
f = 1 MHz
1440
2160
pF
Coss
Output Capacitance
477
720
pF
Crss
Reverse Transfer Capacitance
458
690
pF
Rg
Gate Resistance
12
Ω
~~Te~~
~~——--o!~~
~~—————~~|**Off Characteristics**
**On Characteristics**
**Dynamic Characteristics**
**Switching Characteristics**
**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
BVDSS
Drain to Source Breakdown Voltage
ID= -250μA, VGS= 0 V
-30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID= -250μA, referenced to 25 °C
-19
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= -24 V, VGS = 0 V
-1
μA
IGSS
Gate to Source Leakage Current
VGS= ±25 V, VDS = 0 V
±10
μA
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= -250μA
-1.2
-2
-2.6
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= -250μA, referenced to 25 °C
5.9
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= -10 V, ID= -11 A
11
13.5
mΩ
VGS= -4.5 V, ID= -8 A
19
27
VGS= -10 V, ID= -11 A,
TJ= 125 °C
14.5
21
gFS
Forward Transconductance
VDD= -5 V, ID= -11 A
38
S
Ciss
Input Capacitance
VDS= -15 V, VGS= 0 V,
f = 1 MHz
1440
2160
pF
Coss
Output Capacitance
477
720
pF
Crss
Reverse Transfer Capacitance
458
690
pF
Rg
Gate Resistance
12
Ω
~~Te~~
~~——--o!~~
~~—————~~| |---|---| |td(on)
Turn-On DelayTime
VDD= -15 V, ID= -11 A,
VGS= -10 V, RGEN= 6Ω
8.8
18
ns
tr
Rise Time
19
34
ns
td(off)
Turn-Off DelayTime
87
139
ns|| |tf
Fall Time
72
115
ns|| |Qg
Total Gate Charge
VGS= 0 V to -10 V
VDD= -15 V,
ID= -11 A
33
46
nC
Qg
Total Gate Charge
VGS= 0 V to -4.5 V
20
28
nC
Qgs
Gate to Source Charge
4.5
nC
Qgd
Gate to Drain “Miller” Charge
13
nC
~~————~~|| |**Drain-Source Diode Characteristics**|| |VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = -2 A(Note 2)
-0.7
-1.2
V
VGS = 0 V, IS = -11 A(Note 2)
-0.9
-1.4
V
trr
Reverse RecoveryTime
IF= -11 A, di/dt = 100 A/μs
31
50
ns
Qrr
Reverse RecoveryCharge
9
18
nC
~~——————~~|| |NOTES:|| |1. RθJAis determined with the device mounted on a 1 in2pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθCAis determined by the user's board design.|| |a. 52 °C/W when mounted
on a 1 in2pad of 2 oz copper.
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
{l|| |**G**
**DF**
**DS**
**SF**
**SS**|| |**G**
**DF**
**DS**
**SF**
**SS**|| 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Pulse Id refers to Forward Bias Safe Operation Area. www.fairchildsemi.com **2** ©2015 Fairchild Semiconductor Corporation FDMA6676PZ Rev.C **Typical Characteristics** TJ = 25 °C unless otherwise noted **==> picture [452 x 566] intentionally omitted <==** **----- Start of picture text -----**
4
100
VGS = -10 V
80 V GS = -6 V 3 VGS = -3.5 V
60 VGS = -4.5 V
2
VGS = -5.5 V VGS = -5.5 V
40
VGS = -4.5 V
1
20 VGS = -6 V VGS = -10 V
PULSE DURATION = 80 μ s
VGS = -3.5 V PULSE DURATION = 80 DUTY CYCLE = 0.5% MAX μ s 0 DUTY CYCLE = 0.5% MAX
0 0 20 40 60 80 100
0 1 2 3 4 5
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics Figure 2. Normalized On- Resistance
vs Drain Current and Gate Voltage
1.4 80
ID = -11 A PULSE DURATION = 80 μ s
1.3 VGS = -10 V DUTY CYCLE = 0.5% MAX
60
1.2
ID = -11 A
1.1
40
1.0
TJ = 125 [o] C
0.9
20
0.8
TJ = 25 [o] C
0.7 0
-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE ( [o] C) -VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to
vs Junction Temperature Source Voltage
100 100
PULSE DURATION = 80 μ s VGS = 0 V
DUTY CYCLE = 0.5% MAX
80 10
VDS = -5 V
60 1 T J = 150 [o] C
TJ = 150 [o] C
40 0.1 T J = 25 [ o] C
TJ = 25 [o] C
20 0.01 TJ = -55 [o] C
TJ = -55 [o] C
0 0.001
1 2 3 4 5 6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode
NORMALIZED
, DRAIN CURRENT (A)
D
-I
DRAIN TO SOURCE ON-RESISTANCE
) Ω
(m
DRAIN TO
NORMALIZED rDS(on),
SOURCE ON-RESISTANCE
DRAIN TO SOURCE ON-RESISTANCE
, DRAIN CURRENT (A)
D
-I , REVERSE DRAIN CURRENT (A)
S
-I
**----- End of picture text -----**
**Figure 6. Source to Drain Diode Forward Voltage vs Source Current** www.fairchildsemi.com **3** ©2015 Fairchild Semiconductor Corporation FDMA6676PZ Rev.C **Typical Characteristics** TJ = 25 °C unless otherwise noted **==> picture [464 x 574] intentionally omitted <==** **----- Start of picture text -----**
10 10000
ID = -11 A
8
VDD = -10 V Ciss
6
VDD = -15 V 1000 Coss
4
VDD = -20 V
Crss
2
f = 1 MHz
VGS = 0 V
0 100
0 10 20 30 40 0.1 1 10 30
Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain
to Source Voltage
300 1000
100 THIS AREA IS SINGLE PULSE
LIMITED BY rDS(on) R θ JA = 145 [o] C/W
100
10 100 μ s TA = 25 [o] C
1 ms 10
1
10 ms
SINGLE PULSE 100 ms
0.1 T J = MAX RATED 1
1 s
R θ JA = 145 [ o] C/W CURVE BENT TO 10 s
TA = 25 [o] C MEASURED DATA DC
0.01 0.1
0.01 0.1 1 10 100200 10-4 10-3 10-2 10-1 1 10 100 1000
-VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)
Figure 9. Forward Bias Safe Figure 10. Single Pulse Maximum
Operating Area Power Dissipation
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1 0.1 PDM
0.05
0.02
0.01 0.01 t 1
t2
SINGLE PULSE NOTES:
0.001 Z θ JA(t) = r(t) x R θ JA
R θ JA = 145 [o] C/W
Peak TJ = PDM x Z θ JA(t) + TA
Duty Cycle, D = t 1 / t 2
0.0001
10-4 10-3 10-2 10-1 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 11. Junction-to-Ambient Transient Thermal Response Curve
CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE (V)
GS
-V
, DRAIN CURRENT (A)
D
-I
PEAK TRANSIENT POWER (W)
,
(PK)
P
THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE TRANSIENT
**----- End of picture text -----**
www.fairchildsemi.com **4** ©2015 Fairchild Semiconductor Corporation FDMA6676PZ Rev.C **==> picture [545 x 673] intentionally omitted <==** **----- Start of picture text -----**
A
0.05 C
2.050±0.10
2X B
(0.250)
(1.050)
(0.475)
6 4
2X
2.050±0.10
(1.560) (0.660)
1.825
0.05 C (0.345)
PIN 1
LOCATION TOP VIEW 2X (0.370)
1 3
0.800 MAX 0.650 (0.400)
0.10 C
7X
0.050 1.300
0.000
0.05 C LAND PATTERN
(0.200)
RECOMMENDATION
SEATING
PLANE SIDE VIEW C
0.10 C A B
1.300
0.05 C
0.650 0.300±0.05
NOTES:
6X
A) THIS PACKAGE IS NON-JEDEC
1 3 B) ALL DIMENSIONS ARE IN MILLIMETERS.
(0.450)
C) DIMENSIONING AND TOLERANCING
PER ASME Y14.5M - 2009.
135° D) DRAWING FILE NAME: PQFN06AREV2
1.500±0.05 0.600±0.05
0.300±0.05
6 4
0.275±0.05
(0.225) 4X
0.888±0.05 (0.350)
(0.950)
BOTTOM VIEW
**----- End of picture text -----**
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