# Dual MOSFET, N Channel, 30 V, 3.8 A, 0.046 ohm, WDFN, Surface Mount ![Product image](https://novapart.co/image/farnell:3003871/) **URL**: https://novapart.co/products/FDMA3028N/dual-mosfet-n-channel-30-v-38-a-0046-ohm-wdfn **SKU**: FDMA3028N **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Dual MOSFETs **Price**: €0.1910 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 6Pins | | Channel Type | N Channel | | Transistor Mounting | Surface Mount | | Transistor Polarity | N Channel | | Power Dissipation Pd | 1.5W | | Rds(On) Test Voltage | 4.5V | | On Resistance Rds(On) | 0.046ohm | | Transistor Case Style | WDFN | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 3.8A | | Power Dissipation N Channel | 1.5W | | Power Dissipation P Channel | 1.5W | | Gate Source Threshold Voltage Max | 900mV | | Drain Source Voltage Vds N Channel | 30V | | Drain Source Voltage Vds P Channel | 30V | | Continuous Drain Current Id N Channel | 3.8A | | Continuous Drain Current Id P Channel | 3.8A | | Drain Source On State Resistance N Channel | 0.046ohm | | Drain Source On State Resistance P Channel | 0.046ohm | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3003871/) ## **FDMA3028N** ## **Dual N-Channel PowerTrench[®] MOSFET 30 V, 3.8 A, 68 m** Ω ## **Features** ## **General Description** |**Dual N-Channel PowerTrench[®] MOSFET**
**30 V, 3.8 A, 68 m**Ω
**Features**
**General Description**|**Dual N-Channel PowerTrench[®] MOSFET**
**30 V, 3.8 A, 68 m**Ω
**Features**
**General Description**|**Dual N-Channel PowerTrench[®] MOSFET**
**30 V, 3.8 A, 68 m**Ω
**Features**
**General Description**|**Dual N-Channel PowerTrench[®] MOSFET**
**30 V, 3.8 A, 68 m**Ω
**Features**
**General Description**|**Dual N-Channel PowerTrench[®] MOSFET**
**30 V, 3.8 A, 68 m**Ω
**Features**
**General Description**|**Dual N-Channel PowerTrench[®] MOSFET**
**30 V, 3.8 A, 68 m**Ω
**Features**
**General Description**|**Dual N-Channel PowerTrench[®] MOSFET**
**30 V, 3.8 A, 68 m**Ω
**Features**
**General Description**|**Dual N-Channel PowerTrench[®] MOSFET**
**30 V, 3.8 A, 68 m**Ω
**Features**
**General Description**|**Dual N-Channel PowerTrench[®] MOSFET**
**30 V, 3.8 A, 68 m**Ω
**Features**
**General Description**|**Dual N-Channel PowerTrench[®] MOSFET**
**30 V, 3.8 A, 68 m**Ω
**Features**
**General Description**| |---|---|---|---|---|---|---|---|---|---| |Max. RDS(on)= 68 mΩat VGS= 4.5 V, ID= 3.8 A
Max. RDS(on)= 88 mΩat VGS= 2.5 V, ID= 3.4 A
Max. RDS(on)= 123 mΩat VGS= 1.8 V, ID= 2.9 A
Low profile - 0. 8 mm maximum - in the new package
MicroFET 2x2 mm
RoHS Compliant
This device is designed specifically as a single package solution
for dual switching requirements in cellular handset and other
ultra-portable
applications.
It
features
two independent
N-Channel MOSFETs with low on-state resistance for minimum
conduction losses. The MicroFET 2x2 package offers
exceptional thermal performance for its physical size and is well
suited to linear mode applications.
**G2**
**S1**
**G1**
**D2**
**D1**
**S2**
**S1**
**G1**
**D2**
**S2**
**D1**
**G2**
**PIN 1**
**D1**
**D2**
**1**
**2**
**3**
**6**
**5**
**4**
**Top**
**Bottom**
~~wa~~|||||||||| |**MicroFET 2x2**|||||||||| |**MOSFET Maximum Ratings **TA= 25 °C unless otherwise noted|||||||||| |**Symbol**
**Parameter**||||||**Ratings**|||**Units**| |VDS
Drain to Source Voltage||||||30|||V| |VGS
Gate to Source Voltage||||||±12|||V| |ID
Drain Current -Continuous
(Note 1a)
-Pulsed||||||3.8
16|||A| |PD
Power Dissipation
(Note 1a)
Power Dissipation
(Note 1b)||||||1.5
0.7|||W| |TJ, TSTG
Operatingand Storage Junction Temperature Range||||||-55 to +150|||°C| |**Thermal Characteristics**|||||||||| |Thermal Resistance for Single Operation, Junction to Ambient
(Note 1a)||||||86|||| |Thermal Resistance for Single Operation, Junction to Ambient
(Note 1b)||||||173|||| |RθJA
Thermal Resistance for Dual Operation, Junction to Ambient
(Note 1c)
Thermal Resistance for Dual Operation, Junction to Ambient
(Note 1d)||||||69
151|||°C/W| |Thermal Resistance for Single Operation, Junction to Ambient (Note 1e)||||||160|||| |Thermal Resistance for Dual Operation, Junction to Ambient
(Note 1f)||||||133|||| |**Package Marking and Ordering Information**|||||||||| |**Device Marking**
**Device**
**Package**
**Reel Size**
328
FDMA3028N
MicroFET 2X2
7 ’’
~~[_~~|||**Tape Width**
8 mm||||||**Quantity**
3000 units| ## **MOSFET Maximum Ratings** ## **Thermal Characteristics** ## **Package Marking and Ordering Information** 2013 ON Semiconductor Components Industries,LLC August-2017.Rev3 Product Order Number: FDMA3028N/D |**Electrical Characteristics**TJ= 25 °C unless otherwise noted|**Electrical Characteristics**TJ= 25 °C unless otherwise noted|**Electrical Characteristics**TJ= 25 °C unless otherwise noted|**Electrical Characteristics**TJ= 25 °C unless otherwise noted||||| |---|---|---|---|---|---|---|---| |**Symbol**||**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Units**| |**Off Characteristics**|||||||| |BVDSS||Drain to Source Breakdown Voltage|ID= 250μA, VGS= 0 V|30|||V| |ΔBVDSS
ΔTJ||Breakdown Voltage Temperature
Coefficient|ID= 250μA, referenced to 25 °C||23||mV/°C| |IDSS||Zero Gate Voltage Drain Current|VDS= 24 V, VGS= 0 V|||1|μA| |IGSS||Gate to Source Leakage Current|VGS= ±12 V, VDS= 0 V|||±100|nA| |**On Characteristics**|||||||| |VGS(th)||Gate to Source Threshold Voltage|VGS= VDS, ID= 250μA|0.6|0.9|1.5|V| |ΔVGS(th)
ΔTJ||Gate to Source Threshold Voltage
Temperature Coefficient|ID= 250μA, referenced to 25 °C||-3||mV/°C| |rDS(on)||Static Drain to Source On Resistance|VGS= 4.5 V, ID= 3.8 A||46|68|mΩ| ||||VGS= 2.5 V, ID= 3.4 A||56|88|| ||||VGS= 1.8 V, ID= 2.9 A||80|123|| ||||VGS= 4.5 V, ID= 3.8 A, TJ= 125 °C||72|108|| |gFS||Forward Transconductance|VDS= 5 V, ID= 3.8 A||15||S| |**Dynamic Characteristics**|||||||| |Ciss||Input Capacitance|VDS= 15 V, VGS= 0 V,
f = 1 MHz||282|375|pF| |Coss||Output Capacitance|||40|55|pF| |Crss||Reverse Transfer Capacitance|||29|45|pF| |Rg||Gate Resistance|||2.4||Ω| |**Switching Characteristics**|||||||| |td(on)||Turn-On Delay|VDD= 15 V, ID= 3.8 A,
VGS= 4.5 V, RGEN= 6Ω||5.3|11|ns| |tr||Rise Time|||3|10|ns| |td(off)||Turn-Off Delay|||15|27|ns| |tf||Fall Time|||2.5|10|ns| |Qg(TOT)||Total Gate Charge|VDD= 15 V, ID= 3.8 A
VGS= 5 V||3.7|5.2|nC| |Qgs||Gate to Source Charge|||0.4||nC| |Qgd||Gate to Drain “Miller” Charge|||1||nC| |**Drain-Source Diode Characteristics**|||||||| |VSD|Source to Drain Diode Forward Voltage||VGS= 0 V, IS= 1.3 A
(Note 2)||0.7|1.2|V| |trr|Reverse RecoveryTime||IF= 3.8 A, di/dt = 100 A/μs||12|22|ns| |Qrr|Reverse RecoveryCharge||||3.3|10|nC| **www.onsemi.com** **2** ## **Electrical Characteristics** TJ = 25 °C unless otherwise noted ## **Notes:** 1. RθJA is determined with the device mounted on a 1 in[2] oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. - (a) RθJA = 86 °C/W when mounted on a 1 in[2] pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation. - (b) RθJA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation. - (c) RθJA = 69[o] C/W when mounted on a 1 in[2 ] pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation. - (d) RθJA = 151[o] C/W when mounted on a minimum pad of 2 oz copper. For dual operation. - (e) RθJA = 160[o] C/W when mounted on a 30mm[2] pad of 2 oz copper. For single operation. (f) RθJA = 133[o] C/W when mounted on a 30mm[2] pad of 2 oz copper. For dual operation. - a. 86 °C/W when mounted on b. 173 °C/W when mounted on a 1 in[2 ] pad of 2 oz copper a minimum pad of 2 oz copper fle0000 oy » - c. 69 °C/W when mounted on d. 151 °C/W when mounted on a 1 in[2 ] pad of 2 oz copper a minimum pad of 2 oz copper fokeye) - 00000 - e. 160 °C/W when mounted on f. 133 °C/W when mounted on 30mm[2 ] pad of 2 oz copper 30mm[2] of 2 oz copper 2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% **www.onsemi.com** **3** ## **Typical Characteristics** TJ = 25°C unless otherwise noted **==> picture [471 x 177] intentionally omitted <==** **----- Start of picture text -----**
16 2.5
VGS = 4.5 V PULSE DURATION = 80 μ s
VGS = 3.5 V VGS = 1.8 V DUTY CYCLE = 0.5%MAX
12 V GS = 3 V 2.0
VGS =2.5 V
8 1.5 V GS = 2.5 V
4 1.0
VGS = 1.8 V PULSE DURATION = 80 μ s VGS = 3 V VGS = 3.5 V VGS = 4.5 V
DUTY CYCLE = 0.5%MAX
0 0.5
0.0 0.5 1.0 1.5 2.0 0 4 8 12 16
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A)
NORMALIZED
DRAIN CURRENT (A)
,
ID
DRAIN TO SOURCE ON-RESISTANCE
**----- End of picture text -----**
**Figure 1. On Region Characteristics** **Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage** **==> picture [469 x 383] intentionally omitted <==** **----- Start of picture text -----**
1.6 200
ID = 3.8 A
VGS = 4.5 V PULSE DURATION = 80 DUTY CYCLE = 0.5% MAX μ s
1.4
150
ID = 3.8 A
1.2
TJ = 125 [o] C
100
1.0
50
0.8
TJ = 25 [o] C
0.6 0
-75 -50 -25 0 25 50 75 100 125 150 1.5 2.0 2.5 3.0 3.5 4.0 4.5
TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance Figure 4. On-Resistance vs Gate to
vs. Junction Temperature Source Voltage
16 20
PULSE DURATION = 80 μ s 10 VGS = 0 V
DUTY CYCLE = 0.5% MAX
12
VDS = 5 V 1 TJ = 150 [o] C
8
0.1 TJ = 25 [ o] C
TJ = 150 [o] C
4
TJ = 25 [o] C 0.01 TJ = -55 [o] C
TJ = -55 [o] C
0 0.001
0 1 2 3 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
)
Ω
m
(
DRAIN TO
NORMALIZED rDS(on),
SOURCE ON-RESISTANCE
DRAIN TO SOURCE ON-RESISTANCE
, DRAIN CURRENT (A)
ID
, REVERSE DRAIN CURRENT (A)
IS
**----- End of picture text -----**
**Figure 5. Transfer Characteristics** **Figure 6. Source to Drain Diode Forward Voltage vs. Source Current** **www.onsemi.com** **4** **Typical Characteristics** TJ = 25°C unless otherwise noted **==> picture [469 x 593] intentionally omitted <==** **----- Start of picture text -----**
5 500
ID = 3.8 A VDD = 10 V Ciss
4
VDD = 15 V
3 100
VDD = 20 V
2 C oss
1 C rss
f = 1 MHz
VGS = 0 V
0 10
0 1 2 3 4 0.1 1 10 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain
to Source Voltage
20 100
10 SINGLE PULSE
R θ JA = 173 [o] C/W
100 μ s TA = 25 [o] C
1
1 ms 10
THIS AREA IS
10 ms
LIMITED BY r
DS(on)
0.1 SINGLE PULSE 100 ms
TJ = MAX RATED 1 s
R θ JA = 173 [ o] C/W 10 s 1
T A = 25 [o] C DC
0.010.1 1 10 100 0.510-4 10-3 10-2 10-1 1 10 100 1000
VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)
Figure 9. Forward Bias Safe Figure 10. Single-Pulse Maximum
Operating Area Power Dissipation
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2 P DM
0.1
0.1 0.05
0.02 t 1
0.01 t 2
SINGLE PULSE NOTES:
DUTY FACTOR: D = t 1 /t 2
R θ JA = 173 [o] C/W PEAK TJ = PDM x Z θJA x R θJA + TA
0.01
0.00510-4 10-3 10-2 10-1 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)
CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE (V)
GS
V
, DRAIN CURRENT (A)
ID
PEAK TRANSIENT POWER (W)
P)(PK,
ZJA θ
IMPEDANCE,
NORMALIZED THERMAL
**----- End of picture text -----**
**Figure 11. Junction-to-Ambient Transient Thermal Response Curve** **www.onsemi.com** **5** ## **Dimensional Outline and Pad Layout** _Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products._ **www.onsemi.com** **6** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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