# Power MOSFET, N Channel, 40 V, 90 A, 2300 µohm, TO-252 (DPAK), Surface Mount ![Product image](https://novapart.co/image/farnell:3003936/) **URL**: https://novapart.co/products/FDD9409-F085/power-mosfet-n-channel-40-v-90-a-2300-ohm-to-252 **SKU**: FDD9409-F085 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.5750 **Stock**: 1000+ **Lead Time**: 78 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | PowerTrench | | Qualification | AEC-Q101 | | Power Dissipation | 150W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-252 (DPAK) | | Drain Source Voltage Vds | 40V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 90A | | Drain Source On State Resistance | 2300µohm | | Gate Source Threshold Voltage Max | 3.2V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3003936/) **==> picture [390 x 137] intentionally omitted <==** **----- Start of picture text -----**
FDD9409-F085
N-Channel PowerTrench [® ] MOSFET D
40 V, 90 A, 3.2 m Ω
D
Features G
Typ RDS(on) = 2.3mΩ at VGS = 10V, ID = 80A G
a Typ Qg(tot) = 42nC at VGS = 10V, ID = 80A S
a UIS Capability D-PAKTO-252
a RoHS Compliant (TO-252) S
a Qualified to AEC Q101
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**Applications** poHs Automotive Engine Control my sy 2, " Powertrain Management = 7 Solenoid and Motor Drivers > I] Electronic Steering he a Integrated Starter/Alternator Distributed Power Architectures and VRM Primary Switch for 12V Systems |**MOSFET Maximum Ratin**|**MOSFET Maximum Ratings**TJ= 25°C unless otherwise noted.||| |---|---|---|---| |**Symbol**|**Parameter**|**Ratings**|**Units**| |VDSS|Drain-to-Source Voltage|40|V| |VGS|Gate-to-Source Voltage|±20|V| |ID|Drain Current - Continuous(VGS=10) (Note 1)
TC= 25°C|90|A| ||Pulsed Drain Current
TC= 25°C|See Figure 4|| |EAS|Single-Pulse Avalanche Energy
(Note 2)|101|mJ| |PD|Power Dissipation|150|W| ||Derate Above 25oC|1|W/oC| |TJ, TSTG|Operatingand Storage Temperature|-55 to + 175|oC| |RθJC|Thermal Resistance, Junction to Case|1|oC/W| |RθJA|Maximum Thermal Resistance, Junction to Ambient
(Note 3)|52|oC/W| ## **Package Marking and Ordering Information** |**Device Marking**|**Device**|**Package**|**Reel Size**|**Tape Width**|**Quantity**| |---|---|---|---|---|---| |FDD9409|FDD9409-F085|D-PAK(TO-252)|13”|12mm|2500 units| - Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 0.1mH, IAS = 44A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating presented here is based on mounting on a 1 in[2 ] pad of 2oz copper. Publication Order Number: FDD9409-F085/D **1** ©2014 Semiconductor Components Industries, LLC. September-2017, Rev. 3 |**Electrical Characteristics**TJ= 25°C unless otherwise noted.|**Electrical Characteristics**TJ= 25°C unless otherwise noted.|**Electrical Characteristics**TJ= 25°C unless otherwise noted.|**Electrical Characteristics**TJ= 25°C unless otherwise noted.||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Conditions**||**Min.**|**Typ.**|**Max.**|**Units**| |**Off Characteristics**|||||||| |BVDSS|Drain-to-Source Breakdown Voltage|ID= 250μA, VGS= 0V||40|-|-|V| |IDSS|Drain-to-Source Leakage Current|VDS= 40V,
VGS= 0V|TJ= 25oC|-|-|1|μA| ||||TJ= 175oC(Note 4)|
-|-|1|mA| |IGSS|Gate-to-Source Leakage Current|VGS= ±20V||-|-|±100|nA| |**On Characteristics**|||||||| |VGS(th)|Gate-to-Source Threshold Voltage|VGS= VDS, ID= 250μA||2.0|3.2|4.0|V| |RDS(on)|Drain-to-Source On Resistance|ID= 80A,
VGS= 10V|TJ= 25oC|-|2.3|3.2|mΩ| ||||TJ= 175oC(Note 4)|-|4.1|5.7|mΩ| ## **Dynamic Characteristics** |Ciss|Input Capacitance|VDS= 25V, VGS= 0V,
f = 1MHz|-|3130|-|pF| |---|---|---|---|---|---|---| |Coss|Output Capacitance||-|756|-|pF| |Crss|Reverse Transfer Capacitance||-|48|-|pF| |Rg|Gate Resistance|f = 1MHz|-|2|-|Ω| |Qg(ToT)|Total Gate Charge at 10V|VGS= 0 to 10V|-|42|46|nC| |Qg(th)|Threshold Gate Charge|VGS= 0 to 2V|-|6|7|nC| |Qgs|Gate-to-Source Gate Charge||-|16|-|nC| |Qgd|Gate-to-Drain “Miller“ Charge||-|7.7|-|nC| ## **Switching Characteristics** |ton|Turn-On Time|VDD= 20V, ID= 80A,
VGS= 10V, RGEN= 6Ω|-|-|72|ns| |---|---|---|---|---|---|---| |td(on)|Turn-On Delay||-|23|-|ns| |tr|Rise Time||-|22|-|ns| |td(off)|Turn-Off Delay||-|41|-|ns| |tf|Fall Time||-|15|-|ns| |toff|Turn-Off Time||-|-|76|ns| |**Drain-Source Diode Characteristics**||||||| |VSD|Source-to-Drain Diode Voltage|ISD= 80A, VGS= 0V|-|-|1.25|V| |||ISD= 40A, VGS= 0V|-|-|1.2|V| |trr|Reverse-RecoveryTime|IF= 80A, dISD/dt = 100A/μs,
VDD=32V|-|54|73|ns| |Qrr|Reverse-RecoveryCharge||-|42|61|nC| **Note:** - 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. **www.onsemi.com** **2** ## **Typical Characteristics** **==> picture [433 x 560] intentionally omitted <==** **----- Start of picture text -----**
1.2 200
CURRENT LIMITED VGS = 10V
1.0 BY PACKAGE
160
CURRENT LIMITED
0.8 BY SILICON
120
0.6
80
0.4
40
0.2
0.0 0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE( [o] C) TC, CASE TEMPERATURE( [o] C)
Figure 1. Normalized Power Dissipation vs. Case Figure 2. Maximum Continuous Drain Current vs.
Temperature Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10 PDM
0.05
0.02
0.1 0.01 t1
t2
NOTES:
DUTY FACTOR: D = t 1 /t 2
SINGLE PULSE PEAK TJ = PDM x Z θ JA x R θ JA + TC
0.01
10-5 10-4 10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
VGS = 10V
100
T C = 25 [o] C
FOR TEMPERATURES
ABOVE 25 [o] C DERATE PEAK
10 CURRENT AS FOLLOWS:
I = I2 175 - T C
150
SINGLE PULSE
1
10-5 10-4 10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
, DRAIN CURRENT (A)
ID
POWER DISSIPATION MULTIPLIER
IMPEDANCE, ZJC θ
NORMALIZED THERMAL
PEAK CURRENT (A)
,
IDM
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**www.onsemi.com** **3** ## **Typical Characteristics** **==> picture [429 x 587] intentionally omitted <==** **----- Start of picture text -----**
1000
1000
If R = 0
tAV = (L)(IAS)/(1.3 * RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
100
100us
10
STARTING T J = 25 [o] C
OPERATION IN THIS
AREA MAY BE 10
LIMITED BY rDS(on) 1ms
1
SINGLE PULSE 10ms STARTING T J = 150 [o] C
TJ = MAX RATED 100ms
T C = 25 [o] C 1
0.1 0.001 0.01 0.1 1 10 100 1000
1 10 100 tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to ON Semiconductor Application Notes AN7514
Figure 5. Forward Bias Safe Operating Area and AN7515
Figure 6. Unclamped Inductive Switching
Capability
300 300
PULSE DURATION = 80 μ s
250 DUTY CYCLE = 0.5% MAX 100 VGS = 0 V
VDD = 5V
200 10
TJ = 175 [o] C TJ = 175 [o] C
150 T J = 25 [ o] C
TJ = 25 [o] C 1
100 TJ = -55 [o] C
0.1
50
0 0.01
2 3 4 5 6 7 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics
300 300
250 80 μ s PULSE WIDTH
200 Tj=25 [o] C 15V Top10V8VVGS 240 Tj=17580 μ s PULSE WIDTH [o] C 15V Top10VVGS 5.5V
7V 180 8V
6V 7V
150 5.5V 6V
5V Bottom 5.5V
120 5V Bottom
100
5V
50 60
5V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics Figure 10. Saturation Characteristics
, DRAIN CURRENT (A)
ID , AVALANCHE CURRENT (A)IAS
, DRAIN CURRENT (A)
ID , REVERSE DRAIN CURRENT (A)IS
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
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**www.onsemi.com** **4** ## **Typical Characteristics** **==> picture [433 x 591] intentionally omitted <==** **----- Start of picture text -----**
50 1.8
ID = 80A PULSE DURATION = 80 μ s PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
1.6
40
1.4
30
TJ = 175 [o] C TJ = 25 [o] C 1.2
20
1.0
10 0.8 ID = 80A
VGS = 10V
0 0.6
2 4 6 8 10 -80 -40 0 40 80 120 160 200
VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE( [o] C)
Figure 11. RDSON vs. Gate Voltage Figure 12. Normalized RDSON vs. Junction
Temperature
1.2 1.10
VGS = VDS ID = 1mA
ID = 250 μ A
1.0 1.05
0.8 1.00
0.6 0.95
0.4 0.90
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE( [o] C) TJ, JUNCTION TEMPERATURE ( [o] C)
Figure 13. Normalized Gate Threshold Voltage vs. Figure 14. Normalized Drain--Source Breakdown
Temperature Voltage vs. Junction Temperature
10000 10
ID = 80A
Ciss 8 VDD = 16V
VDD = 24V
1000
Coss 6
VDD = 20V
4
100
2
f = 1MHz Crss
V GS = 0V
10 0
0.1 1 10 100 0 10 20 30 40 50
VDS, DRAIN TO SOURCE VOLTAGE (V) Qg , GATE CHARGE(nC)
Figure 15. Capacitance vs. Drain--Source Voltage Figure 16. Gate Charge vs. Gate--Source Voltage
) Ω
m
, DRAIN TO SOURCE NORMALIZED
ON-RESISTANCE (
rDS(on)
DRAIN TO SOURCE ON-RESISTANCE
NORMALIZED GATE
THRESHOLD VOLTAGE BREAKDOWN VOLTAGE
NORMALIZED DRAIN TO SOURCE
CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE(V)
GS
V
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