# Power MOSFET, N Channel, 40 V, 100 A, 0.002 ohm, TO-252 (DPAK), Surface Mount ![Product image](https://novapart.co/image/farnell:3003973/) **URL**: https://novapart.co/products/FDD9407-F085/power-mosfet-n-channel-40-v-100-a-0002-ohm-to-252 **SKU**: FDD9407-F085 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.8510 **Stock**: 10+ ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | PowerTrench | | Qualification | AEC-Q101 | | Power Dissipation | 227W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-252 (DPAK) | | Drain Source Voltage Vds | 40V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 100A | | Drain Source On State Resistance | 0.002ohm | | Gate Source Threshold Voltage Max | 3.1V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3003973/) **==> picture [111 x 13] intentionally omitted <==** **----- Start of picture text -----**
FDD9407-F085
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## **N-Channel Power Trench[® ] MOSFET** ## **40V, 100A, 2.0m** Ω |**40V, 100A, 2.0m**
**Features**
Typ rDS(on)= 1.6mΩat VGS= 10V, ID= 80A
Typ Qg(tot)= 86nC at VGS= 10V, ID= 80A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
**Applications**
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
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ac| |---|---|---|---|---|---|---|---|---|---|---| |Electronic Steering
.is||||||||||| |Integrated Starter/alternator
7|||2
y|||||||| |Distributed Power Architectures and VRM
|||||||||||| |Primary Switch for 12V Systems
|||||||||||| |**MOSFET Maximum Ratings**TJ= 25°C unless otherwise noted||||||||||| |**Symbol**
**Parameter**|||**Ratings**|||||||**Units**| |VDSS
Drain to Source Voltage|||40|||||||V| |VGS
Gate to Source Voltage|||±20|||||||V| |ID
Drain Current - Continuous(VGS=10) (Note 1)
Pulsed Drain Current
T|T|TC = 25°C
TC = 25°C|100
See Figure4|||||||A| |EAS
Single Pulse Avalanche Energy||(Note 2)|171|||||||mJ| |PD
Power Dissipation
Derate above 25oC|||227
1.52|||||||W
W/oC| |TJ, TSTG
Operatingand Storage Temperature|||-55 to + 175|-55 to + 175||||||oC| |RθJC
Thermal Resistance Junction to Case|||0.66|||||||oC/W| |RθJA
Maximum Thermal Resistance Junction to Ambient||Maximum Thermal Resistance Junction to Ambient
(Note 3)|52|||||||oC/W| |**Package Marking and Ordering Information**||||||||||| |**Device Marking**
**Device**
**Package**||**Reel Size**
**Tape Width**||||**Quantity**||||| |FDD9407
FDD9407-F085
D-PAK(TO-252)||13”
12mm||||2500 units||||| |Notes:||||||||||| |1: Current is limited by bondwire configuration.||||||||||| |2: Starting TJ= 25°C, L = 0.08mH, IAS= 64A, VDD= 40V during inductor charging and VDD= 0V during time in avalanche||||||||||| |3:RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder||is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder|is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder|||||||is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder| |mounting surface of the drain pins.RθJCis guaranteed by design while
presented here is based on mounting on a 1 in2pad of 2oz copper.||is guaranteed by design whileRθJAis determined by the user's board design. The maximum rating||||||is determined by the user's board design. The maximum rating||| ## **Features** ## **Applications** ©2013 Semiconductor Components Industries, LLC. September-2017, Rev. 3 Publication Order Number: FDD9407-F085/D |**Electrical Characteristics**TJ= 25°C unless otherwise noted|**Electrical Characteristics**TJ= 25°C unless otherwise noted|**Electrical Characteristics**TJ= 25°C unless otherwise noted|**Electrical Characteristics**TJ= 25°C unless otherwise noted||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Conditions**||**Min**|**Typ**|**Max**|**Units**| |**Off Characteristics**|||||||| |BVDSS|Drain to Source Breakdown Voltage|ID= 250μA, VGS= 0V||40|-|-|V| |IDSS|Drain to Source Leakage Current|VDS= 40V,
VGS= 0V|TJ= 25oC|-|-|1|μA| ||||TJ= 175oC(Note 4)|
-|-|1|mA| |IGSS|Gate to Source Leakage Current|VGS= ±20V||-|-|±100|nA| |**On Characteristics**|||||||| |VGS(th)|Gate to Source Threshold Voltage|VGS= VDS, ID= 250μA||2.0|3.1|4.0|V| |rDS(on)|Drain to Source On Resistance|ID= 80A,
VGS= 10V|TJ= 25oC|-|1.6|2|mΩ| ||||TJ= 175oC(Note 4)|-|2.64|3.22|mΩ| ## **Dynamic Characteristics** |Ciss|Input Capacitance|VDS= 25V, VGS= 0V,
f = 1MHz|-|6390|-|pF| |---|---|---|---|---|---|---| |Coss|Output Capacitance||-|1580|-|pF| |Crss|Reverse Transfer Capacitance||-|95|-|pF| |Rg|Gate Resistance|f = 1MHz|-|2.3|-|Ω| |Qg(ToT)|Total Gate Charge at 10V|VGS= 0 to 10V|-|86|112|nC| |Qg(th)|Threshold Gate Charge|VGS= 0 to 2V|-|12|15.6|nC| |Qgs|Gate to Source Gate Charge||-|30|-|nC| |Qgd|Gate to Drain “Miller“ Charge||-|15|-|nC| ## **Switching Characteristics** |ton|Turn-On Time|VDD= 20V, ID= 80A,
VGS= 10V, RGEN= 6Ω|-|-|120|ns| |---|---|---|---|---|---|---| |td(on)|Turn-On DelayTime||-|27|-|ns| |tr|Rise Time||-|48|-|ns| |td(off)|Turn-Off DelayTime||-|42|-|ns| |tf|Fall Time||-|18|-|ns| |toff|Turn-Off Time||-|-|97|ns| ## **Drain-Source Diode Characteristics** |VSD|Source to Drain Diode Voltage|ISD= 80A, VGS= 0V|-|-|1.25|V| |---|---|---|---|---|---|---| |||ISD= 40A, VGS= 0V|-|-|1.2|V| |Trr|Reverse RecoveryTime|IF= 80A, dISD/dt = 100A/μs,
VDD=32V|-|58|88|ns| |Qrr|Reverse RecoveryCharge||-|83|143|nC| ## **Notes:** 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. **www.onsemi.com** **2** **==> picture [433 x 578] intentionally omitted <==** **----- Start of picture text -----**
Typical Characteristics
1.2 300
CURRENT LIMITED VGS = 10V
1.0 250 BY PACKAGE
0.8 200 CURRENT LIMITED
BY SILICON
0.6 150
0.4 100
0.2 50
0.0 0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE( [o] C) TC, CASE TEMPERATURE( [o] C)
Figure 1. Normalized Power Dissipation vs Case Figure 2. Maximum Continuous Drain Current vs
Temperature Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10 PDM
0.05
0.02
0.1 0.01 t1
t2
NOTES:
DUTY FACTOR: D = t 1 /t 2
SINGLE PULSE PEAK TJ = PDM x Z θ JA x R θ JA + TC
0.01
10-5 10-4 10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
VGS = 10V
100
T C = 25 [o] C
FOR TEMPERATURES
ABOVE 25 [o] C DERATE PEAK
10 CURRENT AS FOLLOWS:
I = I2 175 - TC
150
SINGLE PULSE
1
10-5 10-4 10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
, DRAIN CURRENT (A)
ID
POWER DISSIPATION MULTIPLIER
IMPEDANCE, ZJC θ
NORMALIZED THERMAL
PEAK CURRENT (A)
,
IDM
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**www.onsemi.com** **3** ## **Typical Characteristics** **==> picture [429 x 587] intentionally omitted <==** **----- Start of picture text -----**
If R = 0
1000 1000 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
100
100us
10 STARTING T J = 25 [o] C
OPERATION IN THIS 1ms 10
AREA MAY BE
1 LIMITED BY rDS(on) SINGLE PULSE 10ms STARTING TJ = 150 [o] C
TJ = MAX RATED 100ms
TC = 25 [o] C
1
0.1 1E-3 0.01 0.1 1 10 100 1000
1 10 100 tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching
Capability
250 300
PULSE DURATION = 80 μ s V GS = 0 V
DUTY CYCLE = 0.5% MAX
200 VDD = 5V 100
150 TJ = 175 [o] C TJ = 175 [o] C
T J = 25 [ o] C
100 10
TJ = 25 [o] C TJ = -55 [o] C
50
0 1
3 4 5 6 7 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics
250 250
200 V GS 200
15V Top VGS
150 10V 8V 150 5.5V 15V Top 10V 5.5V
5.5V 7V 8V
6V 7V
100 5.5V Bottom 100 6V5.5V Bottom
50 80 μ s PULSE WIDTH 50 Tj=175 80 μ s PULSE WIDTH [o] C
Tj=25 [o] C
0 0
0 1 2 0.0 0.5 1.0 1.5 2.0
VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics Figure 10. Saturation Characteristics
, DRAIN CURRENT (A)
ID , AVALANCHE CURRENT (A)IAS
, DRAIN CURRENT (A)
ID , REVERSE DRAIN CURRENT (A)IS
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
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Typical Characteristics
30 1.8
ID = 80A PULSE DURATION = 80 μ s PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
1.6
24
1.4
18
TJ = 175 [o] C TJ = 25 [o] C 1.2
12
1.0
6 0.8 ID = 80A
VGS = 10V
0 0.6
2 4 6 8 10 -80 -40 0 40 80 120 160 200
VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE( [o] C)
Figure 11. Rdson vs Gate Voltage Figure 12. Normalized Rdson vs Junction
Temperature
1.2 1.2
VGS = VDS ID = 1mA
ID = 250 μ A
1.0 1.1
0.8 1.0
0.6 0.9
0.4 0.8
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE( [o] C) TJ, JUNCTION TEMPERATURE ( [o] C)
Figure 13. Normalized Gate Threshold Voltage vs Figure 14. Normalized Drain to Source
Temperature Breakdown Voltage vs Junction Temperature
10000 10
ID = 80A
C iss
8
VDD = 20V
1000
Coss 6
4
100
Crss 2
f = 1MHz
V GS = 0V
10 0
0.1 1 10 100 0 20 40 60 80 100
VDS, DRAIN TO SOURCE VOLTAGE (V) Qg , GATE CHARGE(nC)
Figure 15. Capacitance vs Drain to Source Figure 16. Gate Charge vs Gate to Source
Voltage Voltage
) Ω
m
, DRAIN TO SOURCE NORMALIZED
ON-RESISTANCE (
rDS(on)
DRAIN TO SOURCE ON-RESISTANCE
NORMALIZED GATE
THRESHOLD VOLTAGE BREAKDOWN VOLTAGE
NORMALIZED DRAIN TO SOURCE
CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE(V)
GS
V
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