# Power MOSFET, N Channel, 60 V, 100 A, 0.0032 ohm, TO-252 (DPAK), Surface Mount ![Product image](https://novapart.co/image/farnell:3003953/) **URL**: https://novapart.co/products/FDD86567-F085/power-mosfet-n-channel-60-v-100-a-00032-ohm-to-252 **SKU**: FDD86567-F085 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.7880 **Stock**: 1000+ **Lead Time**: 127 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | PowerTrench | | Qualification | AEC-Q101 | | Power Dissipation | 227W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-252 (DPAK) | | Drain Source Voltage Vds | 60V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 100A | | Drain Source On State Resistance | 0.0032ohm | | Gate Source Threshold Voltage Max | 2.9V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3003953/) ## **ON Semiconductor** ## **Is Now** **==> picture [390 x 69] intentionally omitted <==** **To learn more about onsemi™, please visit our website at www.onsemi.com** **onsemi** and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. ## **FDD86567-F085** ## **N-Channel PowerTrench[® ] MOSFET 60 V, 100 A, 3.2 m** Ω ## **Features** - Typical RDS(on) = 2.6 mΩ at VGS = 10V, ID = 80 A **==> picture [441 x 94] intentionally omitted <==** **----- Start of picture text -----**
D
| Typical Qg(tot) = 63 nC at VGS = 10V, ID = 80 A
| UIS Capability
| RoHS Compliant D
| Qualified to AEC Q101 G
G
Applications
y Sols poHs °° S
|| Automotive Engine Control PowerTrain Management a4“ re (TO-252)D-PAKTO-252 S
**----- End of picture text -----**
- " Solenoid and Motor Drivers 2 - | Integrated Starter/Alternator y - Primary Switch for 12V Systems **MOSFET Maximum Ratings** TJ = 25°C unless otherwise noted. |**Symbol**|**Parameter**|**Ratings**|**Units**| |---|---|---|---| |VDSS|Drain-to-Source Voltage|60|V| |VGS|Gate-to-Source Voltage|±20|V| |ID|Drain Current - Continuous(VGS=10) (Note 1)
TC = 25°C|100|A| ||Pulsed Drain Current
TC = 25°C|See Figure 4|| |EAS|Single Pulse Avalanche Energy
(Note 2)|115|mJ| |PD|Power Dissipation|227|W| ||Derate Above 25oC|1.52|W/oC| |TJ, TSTG|Operatingand Storage Temperature|-55 to + 175|oC| |RθJC|Thermal Resistance, Junction to Case|0.66|oC/W| |RθJA|Maximum Thermal Resistance, Junction to Ambient
(Note 3)|52|oC/W| ## **Notes:** - 1: Current is limited by bondwire configuration. - 2: Starting TJ = 25°C, L = 40μH, IAS = 76A, VDD = 60V during inductor charging and VDD = 0V during time in avalanche. - 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in[2 ] pad of 2oz copper. ## **Package Marking and Ordering Information** |**Device Marking**|**Device**|**Package**|**Reel Size**|**Tape Width**|**Quantity**| |---|---|---|---|---|---| |FDD86567|FDD86567-F085|D-PAK(TO-252)|13”|16mm|2500units| ©2015 Semiconductor Components Industries, LLC. August-2017,Rev. 2 Publication Order Number: FDD86567-F085/D **Electrical Characteristics** TJ = 25°C unless otherwise noted. |**Symbol**|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Units**| |---|---|---|---|---|---|---|---| |**Off Characteristics**|||||||| |BVDSS|Drain-to-Source Breakdown Voltage|ID= 250μA, VGS= 0V||60|-|-|V| |IDSS|Drain-to-Source Leakage Current|VDS= 60V,
VGS= 0V|TJ= 25oC|-|-|1|μA| ||||TJ= 175oC (Note 4)|-|-|1|mA| |IGSS|Gate-to-Source Leakage Current|VGS= ±20V||-|-|±100|nA| |**On Characteristics**|||||||| |VGS(th)|Gate to Source Threshold Voltage|VGS= VDS, ID= 250μA||2|2.9|4|V| |RDS(on)|Drain to Source On Resistance|ID= 80A,
VGS= 10V|TJ= 25oC|-|2.6|3.2|mΩ| ||||TJ= 175oC(Note 4)|-|4.9|6.0|mΩ| |**Dynamic Characteristics**|||||||| |Ciss|Input Capacitance|VDS= 30V, VGS= 0V,
f = 1MHz||-|4950|-|pF| |Coss|Output Capacitance|||-|1300|-|pF| |Crss|Reverse Transfer Capacitance|||-|45|-|pF| |Rg|Gate Resistance|VGS= 0.5V, f = 1MHz||-|2.3|-|Ω| |Qg(ToT)|Total Gate Charge|VGS= 0 to 10V||-|63|82|nC| |Qg(th)|Threshold Gate Charge|VGS= 0 to 2V||-|9.1|-|nC| |Qgs|Gate-to-Source Gate Charge|||-|24|-|nC| |Qgd|Gate-to-Drain “Miller“ Charge|||-|10|-|nC| |**Switching Characteristics**|||||||| |ton|Turn-On Time|VDD= 30V, ID= 80A,
VGS= 10V, RGEN= 6Ω||-|-|105|ns| |td(on)|Turn-On Delay|||-|24|-|ns| |tr|Rise Time|||-|45|-|ns| |td(off)|Turn-Off Delay|||-|32|-|ns| |tf|Fall Time|||-|13|-|ns| |toff|Turn-Off Time|||-|-|59|ns| |**Drain-Source Diode Characteristics**|||||||| |VSD|Source-to-Drain Diode Voltage|ISD= 80A, VGS= 0V||-|-|1.25|V| |||ISD= 40A, VGS= 0V||-|-|1.2|V| |trr|Reverse-RecoveryTime|VDD= 48V, IF= 80A,
dISD/dt = 100A/μs||-|68|89|ns| |Qrr|Reverse-RecoveryCharge|||-|76|114|nC| **Note:** - 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. **www.onsemi.com** **2** ## **Typical Characteristics** **==> picture [433 x 563] intentionally omitted <==** **----- Start of picture text -----**
1.2 200
CURRENT LIMITED VGS = 10V
BY SILICON
1.0
CURRENT LIMITED
150
BY PACKAGE
0.8
0.6 100
0.4
50
0.2
0.0 0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE( [o] C) TC, CASE TEMPERATURE( [o] C)
Figure 1. Normalized Power Dissipation vs. Case Figure 2. Maximum Continuous Drain Current vs.
Temperature Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10 P DM
0.05
0.02
0.1 0.01 t 1
t2
NOTES:
SINGLE PULSE DUTY FACTOR: D = t 1 /t 2
PEAK TJ = PDM x Z θ JA x R θ JA + TC
0.01
10-5 10-4 10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
VGS = 10V TC = 25 [o] C
FOR TEMPERATURES
ABOVE 25 [o] C DERATE PEAK
CURRENT AS FOLLOWS:
1000 I = I2 175 - TC
150
100
SINGLE PULSE
10
10-5 10-4 10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
, DRAIN CURRENT (A)
ID
POWER DISSIPATION MULTIPLIER
IMPEDANCE, ZJC θ
NORMALIZED THERMAL
PEAK CURRENT (A)
,
IDM
**----- End of picture text -----**
**www.onsemi.com** **3** ## **Typical Characteristics** **==> picture [430 x 587] intentionally omitted <==** **----- Start of picture text -----**
1000 1000
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
100
100us
10
STARTING TJ = 25 [o] C
OPERATION IN THIS
AREA MAY BE 10
LIMITED BY rDS(on) STARTING TJ = 150 [o] C
1 SINGLE PULSE 1ms
TJ = MAX RATED 10ms
TC = 25 [o] C 100ms
0.1 1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100 200
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to ON Semiconductor Application Notes AN7514
Figure 5. Forward Bias Safe Operating Area and AN7515
Figure 6. Unclamped Inductive Switching
Capability
300 300
PULSE DURATION = 80 μ s
250 DUTY CYCLE = 0.5% MAX 100 VGS = 0 V
VDD = 5V
200
10 TJ = 175 [o] C
150 TJ = 25 [o] C TJ = 25 [ o] C
100
TJ = 175 [o] C TJ = -55 [o] C 1
50
0 0.1
2 3 4 5 6 7 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics
300 300
VGS VGS
250 15V To10V p 250 15V To10V p
8V 8V
7V 7V
200 80 μ s PULSE WIDTH 6V 200 6V
Tj=25 [o] C 5.5V 5V Bottom 5.5V 5V Bottom
150 150
100 100
50 50
80 μ s PULSE WIDTH
Tj=175 [o] C
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics Figure 10. Saturation Characteristics
, DRAIN CURRENT (A)
ID
, AVALANCHE CURRENT (A)
IAS
, DRAIN CURRENT (A)
ID
, REVERSE DRAIN CURRENT (A)
IS
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
**----- End of picture text -----**
**www.onsemi.com 4** ## **Typical Characteristics** **==> picture [433 x 601] intentionally omitted <==** **----- Start of picture text -----**
50 2.4
ID = 80A PULSE DURATION = 80 μ s PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
40 2.0
30 1.6
TJ = 175 [o] C TJ = 25 [o] C
20 1.2
10 0.8 ID = 80A
VGS = 10V
0 0.4
2 4 6 8 10 -80 -40 0 40 80 120 160 200
VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE( [o] C)
Figure 11. RDSON vs. Gate Voltage Figure 12. Normalized RDSON vs. Junction
Temperature
1.5 1.10
VGS = VDS ID = 5mA
ID = 250 μ A
1.2
1.05
0.9
1.00
0.6
0.95
0.3
0.0 0.90
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE( [o] C) TJ, JUNCTION TEMPERATURE ( [o] C)
Figure 13. Normalized Gate Threshold Voltage vs. Figure 14. Normalized Drain to Source
Temperature Breakdown Voltage vs. Junction Temperature
10000 10
ID = 80A
VDD = 30V
Ciss 8
1000 VDD =24V VDD = 36V
6
Coss
4
100
C rss 2
f = 1MHz
V GS = 0V
10 0
0.1 1 10 100 0 20 40 60 80
VDS, DRAIN TO SOURCE VOLTAGE (V) Qg , GATE CHARGE(nC)
Figure 15. Capacitance vs. Drain to Source Figure 16. Gate Charge vs. Gate to Source
Voltage Voltage
) Ω
m
NORMALIZED
, DRAIN TO SOURCE
ON-RESISTANCE (
rDS(on)
DRAIN TO SOURCE ON-RESISTANCE
NORMALIZED GATE
THRESHOLD VOLTAGE BREAKDOWN VOLTAGE
NORMALIZED DRAIN TO SOURCE
CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE(V)
GS
V
**----- End of picture text -----**
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