# Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 9 A, 9 A, 0.019 ohm

![Product image](https://novapart.co/image/farnell:1498953/)

**URL**: https://novapart.co/products/FDD8424H../dual-mosfet-complementary-n-and-p-channel-40-v-9-a
**SKU**: FDD8424H..
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.8960
**Stock**: 10+

## Description

Transistor Polarity:N and P Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 5Pins |
| Channel Type | Complementary N and P Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | TO-252 (DPAK) |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 3.1W |
| Power Dissipation P Channel | 35W |
| Drain Source Voltage Vds N Channel | 40V |
| Drain Source Voltage Vds P Channel | 40V |
| Continuous Drain Current Id N Channel | 9A |
| Continuous Drain Current Id P Channel | 9A |
| Drain Source On State Resistance N Channel | 0.019ohm |
| Drain Source On State Resistance P Channel | 0.019ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1498953/)

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## **FDD8424H** 

**Dual N & P-Channel PowerTrench[®] MOSFET N-Channel: 40V, 20A, 24m** Ω **P-Channel: -40V, -20A, 54m** Ω 

## **Features** 

Q1: N-Channel 

Max rDS(on) = 24mΩ at VGS = 10V, ID = 9.0A Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.0A 

Q2: P-Channel 

Max rDS(on) = 54mΩ at VGS = -10V, ID = -6.5A Max rDS(on) = 70mΩ at VGS = -4.5V, ID = -5.6A Fast switching speed 

RoHS Compliant 

## **General Description** 

These  dual N and P-Channel  enhancement   mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench- process that has been especially tailored  to minimize on-state resistance and  yet  maintain superior switching performance. 

## **Application** 

Inverter 

H-Bridge 

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D1 D2<br>D1/D2<br>G1 G2<br>G2<br>S2<br>G1<br>S1<br>S1 S2<br>Dual DPAK 4L<br>N-Channel P-Channel<br>MOSFET Maximum Ratings TC = 25°C unless otherwise noted<br>Symbol Parameter Q1 Q2 Units<br>VDS Drain to Source Voltage 40 -40 V<br>VGS Gate to Source Voltage ±20 ±20 V<br>Drain Current      - Continuous  (Package Limited) 20 -20<br>ID                             - Continuous                                           T                            - Continuous  (Silicon Limited)               TCA = 25°C= 25°C 9.026 -6.5-20 A<br>                            - Pulsed 55 -40<br>Se Power Dissipation for Single Operation                                TC = 25°C     (Note 1) 30 35<br>PD                                                                                                     TA = 25°C   (Note 1a) 3.1 W<br>                                                                                                    TA = 25°C   (Note 1b) 1.3<br>————— EAS Single Pulse Avalanche Energy (Note 3) 29 33 mJ<br>TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C<br>Thermal Characteristics<br>RθJC Thermal Resistance, Junction to Case, Single Operation for Q1            (Note 1) 4.1<br>°C/W<br>RθJC Thermal Resistance, Junction to Case, Single Operation for Q2            (Note 1) 3.5<br>[><br>Package Marking and Ordering Information<br>Device Marking Device Package Reel Size Tape Width Quantity<br>FDD8424H FDD8424H TO-252-4L 13” 16mm 2500 units<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

**1** 

©2013 Fairchild Semiconductor Corporation FDD8424H Rev.1.5 

## **Electrical Characteristics** TJ = 25°C unless otherwise noted 

|**Electrica**|**l Characteristics **TJ= 25°C un|less otherwise noted||||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Type**|**Min**|**Typ**|**Max**|**Units**|
|**Off Characteristics**||||||||
|BVDSS|Drain to Source Breakdown Voltage|ID= 250μA, VGS= 0V<br>ID= -250μA, VGS= 0V|Q1<br>Q2|40<br>-40|||V|
|ΔBVDSS<br>ΔTJ|Breakdown Voltage Temperature<br>Coefficient|ID= 250μA, referenced to 25°C<br>ID= -250μA, referenced to 25°C|Q1<br>Q2||34<br>-32||mV/°C|
|IDSS|Zero Gate Voltage Drain Current|VDS= 32V,   VGS= 0V<br>VDS= -32V,  VGS = 0V|Q1<br>Q2|||1<br>-1|μA|
|IGSS|Gate to Source Leakage Current|VGS= ±20V, VDS= 0V|Q1<br>Q2|||±100<br>±100|nA<br>nA|
|**On Characteristics**||||||||
|VGS(th)|Gate to Source Threshold Voltage|VGS= VDS,  ID= 250μA<br>VGS= VDS,  ID= -250μA|Q1<br>Q2|1<br>-1|1.7<br>-1.6|3<br>-3|V|
|ΔVGS(th)<br>ΔTJ|Gate to Source Threshold Voltage<br>Temperature Coefficient|ID= 250μA, referenced to 25°C<br>ID= -250μA, referenced to 25°C|Q1<br>Q2||-5.3<br>4.8||mV/°C|
|rDS(on)|Static Drain to Source On Resistance|VGS= 10V,  ID= 9.0A<br>VGS= 4.5V,  ID= 7.0A<br>VGS= 10V,  ID= 9.0A, TJ = 125°C|Q1||19<br>23<br>29|24<br>30<br>37|mΩ|
|||VGS= -10V,  ID= -6.5A<br>VGS= -4.5V,  ID= -5.6A<br>VGS= -10V,  ID= -6.5A, TJ = 125°C|<br>Q2||42<br>58<br>62|54<br>70<br>80||
|gFS|Forward Transconductance|VDS= 5V,  ID= 9.0A<br>VDS= -5V,  ID= -6.5A|Q1<br>Q2||29<br>13||S|
|**Dynamic Characteristics**||||||||
|Ciss|Input Capacitance|Q1<br>VDS= 20V, VGS= 0V, f = 1MHZ<br>Q2<br>VDS= -20V, VGS= 0V, f = 1MHZ|Q1<br>Q2||750<br>1000|1000<br>1330|pF|
|Coss|Output Capacitance||Q1<br>Q2||115<br>140|155<br>185|pF|
|Crss|Reverse Transfer Capacitance||Q1<br>Q2||75<br>75|115<br>115|pF|
|Rg|Gate Resistance|f = 1MHz|Q1<br>Q2|0.1<br>0.1|1.1<br>3.3|3.3<br>9.9|Ω|
|**Switching Characteristics**||||||||
|td(on)|Turn-On Delay Time|Q1<br>VDD= 20V, ID= 9.0A,<br>VGS= 10V, RGEN= 6Ω<br>Q2<br>VDD= -20V, ID= -6.5A,<br>VGS= -10V, RGEN= 6Ω|Q1<br>Q2||7<br>7|14<br>14|ns|
|tr|Rise Time||Q1<br>Q2||13<br>3|24<br>10|ns|
|td(off)|Turn-Off Delay Time||Q1<br>Q2||17<br>20|31<br>36|ns|
|tf|Fall Time||Q1<br>Q2||6<br>3|12<br>10|ns|
|Qg(TOT)|Total Gate Charge|Q1<br>VGS= 10V, VDD= 20V, ID= 9.0A<br>Q2<br>VGS= -10V, VDD= -20V, ID= -6.5A|Q1<br>Q2||14<br>17|20<br>24|nC|
|Qgs|Gate to Source  Charge||Q1<br>Q2||2.3<br>3.0||nC|
|Qgd|Gate to Drain “Miller” Charge||Q1<br>Q2||3.2<br>3.6||nC|



www.fairchildsemi.com 

©2013 Fairchild Semiconductor Corporation FDD8424H Rev.1.5 

**2** 

**Electrical Characteristics** TJ = 25°C unless otherwise noted 

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Symbol Parameter Test Conditions Type Min Typ Max Units<br>Drain-Source Diode Characteristics<br>Q1 20<br>IS Maximum Continuous Drain to Source Diode Forward Current Q2 -20 A<br>Q1 55<br>ISM Maximum Pulsed Drain to Source Diode Forward Current               (Note 2) Q2 -40 A<br>VSD Source to Drain Diode  Forward Voltage VVGS GS = 0V, I= 0V, ISS = -6.5A          = 9.0A           (Note 2)(Note 2) Q1Q2 0.870.88 -1.2 1.2 V<br>Q1 Q1 25 38<br>trr Reverse Recovery Time IF = 9.0A, di/dt = 100A/s Q2 29 44 ns<br>Q2 Q1 19 29<br>Qrr Reverse Recovery Charge IF = -6.5A, di/dt = 100A/s Q2 29 44 nC<br>**----- End of picture text -----**<br>


**Notes:** 

**1.** Rθ **JA** is determined with the device mounted on a 1in[2] pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. Rθ **JC** is guaranteed by design while Rθ **CA** is determined by  the user's board design. 

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b. 96°C/W when mounted on  a<br>Q1 a. 40°C/W when mounted on<br>    a 1 in [2  ]  pad of  2 oz  copper     minimum pad of 2 oz copper<br>jelelelele)<br> Scale 1 : 1 on letter size paper<br>ao0000 Y<br>00000<br>Q2 a. 40°C/W when mounted on    b. 96°C/W when mounted on  a<br>    a 1 in [2  ]  pad of  2 oz  copper      minimum pad of 2 oz copper<br>oooo00<br> Scale 1 : 1 on letter size paper<br>**----- End of picture text -----**<br>


2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 

3. Starting TJ = 25°C, N-ch: L = 0.3mH, IAS = 14A, VDD = 40V, VGS = 10V;  P-ch: L = 0.3mH, IAS = -15A, VDD = -40V, VGS = -10V. 

©2013 Fairchild Semiconductor Corporation FDD8424H Rev.1.5 

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## **Typical Characteristics (Q1 N-Channel)** TJ = 25°C unless otherwise noted 

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60 3.0<br>VGS = 4.0V VGS = 3.0V PULSE DURATION = 80 μ s<br>50 DUTY CYCLE = 0.5%MAX<br>VGS = 10V 2.5<br>40 PULSE DURATION = 80DUTY CYCLE = 0.5%MAX μ s VGS = 4.0V<br>VGS = 4.5V 2.0 VGS = 3.5V<br>30 VGS =  4.5V<br>VGS = 3.5V 1.5<br>20<br>1.0<br>10 VGS =  3.0V VGS = 10V<br>0 0.5<br>0 1 2 3 4 0 10 20 30 40 50 60<br>VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A)<br>Figure 1.  On- Region Characteristics Figure 2.  Normalized On-Resistance<br>vs Drain Current and Gate Voltage<br>1.8 50<br> ID = 9A ID = 9A PULSE DURATION = 80 μ s<br>1.6 V GS  = 10V DUTY CYCLE = 0.5%MAX<br>40<br>1.4 TJ = 125 [o] C<br>1.2 30<br>1.0 TJ = 25 [o] C<br>20<br>0.8<br>0.6 10<br>-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10<br>TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3.  Normalized  On -Resistance                                         Figure 4.   On-Resistance vs  Gate   to<br>vs Junction Temperature Source Voltage<br>60 60<br>PULSE DURATION = 80 μ s VGS = 0V<br>50 DUTY CYCLE = 0.5%MAX 10<br>VDS = 5V<br>40 1 TJ = 150 [o] C<br>30<br>0.1 TJ = 25 [o] C<br>20<br>TJ = 150 [o] C TJ = 25 [o] C 0.01<br>10 TJ = -55 [o] C<br>TJ = -55 [o] C<br>0 0.001<br>1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 0.3 0.6 0.9 1.2 1.5<br>VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 5.  Transfer Characteristics Figure 6.    Source to Drain  Diode<br>NORMALIZED<br>, DRAIN CURRENT (A)<br>ID<br>DRAIN TO SOURCE ON-RESISTANCE<br>)<br>Ω<br>m<br>(<br>, DRAIN TO<br>NORMALIZED<br>rDS(on)<br>SOURCE ON-RESISTANCE<br> DRAIN TO SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)<br>ID<br> REVERSE DRAIN CURRENT (A)IS,<br>**----- End of picture text -----**<br>


**Figure 6.    Source to Drain  Diode Forward Voltage vs Source Current** 

www.fairchildsemi.com 

©2013 Fairchild Semiconductor Corporation FDD8424H Rev.1.5 

**4** 

## **Typical Characteristics (Q1 N-Channel)** TJ = 25°C unless otherwise noted 

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10 2000<br>ID = 9A<br>1000 Ciss<br>8<br>6<br>VDD = 15V VDD = 20V<br>Coss<br>4<br>VDD = 25V 100<br>2 f = 1MHz<br>VGS = 0V C rss<br>0 30<br>0 4 8 12 16 0.1 1 10 40<br>Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7.  Gate Charge Characteristics Figure 8.  Capacitance   vs  Drain<br>to Source Voltage<br>30 30<br>25 Limited by Package<br>TJ = 25 [o] C<br>10 20<br>VGS = 10V<br>15<br>10<br>TJ = 125 [o] C VGS = 4.5V<br>5<br>R θ JC = 4.1 [o] C/W<br>1 0<br>0.001 0.01 0.1 1 10 100 25 50 75 100 125 150<br>tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE ( [o] C)<br>Figure 9. Unclamped  Inductive                                  Figure 10. Maximum  Continuous  Drain<br>Switching Capability Current  vs Case Temperature<br>100 10000<br>10us<br>V GS  = 10V FOR TEMPERATURESABOVE 25 [o] C DERATE PEAK<br>10 100us 1000 CURRENT AS FOLLOWS:<br>I = I25  150 ---------------------- 125 – TC -<br>THIS AREA IS<br>LIMITED BY r<br>DS(on) TC = 25 [o] C<br>1 SINGLE PULSE 1ms 100<br>TJ = MAX RATED<br>R θ JC  = 4.1 [o] C/W 10ms SINGLE PULSE<br>TC = 25 [o] C DC R θ JC = 4.1 [o] C/W<br>0.1 10<br>1 10 80 10-5 10-4 10-3 10-2 10-1 100 101<br>VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s)<br>Figure 11.  Forward Bias Safe                                            Figure 12.  Single    Pulse    Maximum<br>Operating Area     Power Dissipation<br>CAPACITANCE (pF)<br>GATE TO SOURCE VOLTAGE(V)<br>,<br>GS<br>V<br>DRAIN CURRENT (A)<br>,<br>ID<br>, AVALANCHE CURRENT(A)<br>IAS<br>DRAIN CURRENT (A)<br>,<br>ID<br>PEAK TRANSIENT POWER (W)<br>P)(PK,<br>**----- End of picture text -----**<br>


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©2013 Fairchild Semiconductor Corporation FDD8424H Rev.1.5 

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Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted<br>2<br>1 DUTY CYCLE-DESCENDING ORDER<br>D = 0.5<br>      0.2<br>      0.1<br>      0.05<br>0.1       0.02 PDM<br>      0.01<br>t1<br>t2<br>NOTES:<br>SINGLE PULSE DUTY FACTOR: D = t1/t2<br>0.01 R θ JC = 4.1 [o] C/W PEAK TJ = PDM x Z θJC  x R θJC  + TC<br>0.005<br>10-5 10-4 10-3 10-2 10-1 100 101<br>t, RECTANGULAR PULSE DURATION (s)<br>Figure 13.  Transient Thermal Response Curve<br>IMPEDANCE, ZJC θ<br>NORMALIZED THERMAL<br>**----- End of picture text -----**<br>


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## **Typical Characteristics (Q2 P-Channel)** TJ = 25°C unless otherwise noted 

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40 3.0<br>PULSE DURATION = 80DUTY CYCLE = 0.5%MAX μ s VGS = -3V PULSE DURATION = 80 μ s<br>VGS =  - 10V 2.5 DUTY CYCLE = 0.5%MAX<br>30 VGS =  - 4.5V VGS = -3.5V VGS = -4V<br>2.0<br>20 V GS = - 4V<br>VGS = -4.5V<br>1.5<br>10 VGS =  - 3.5V VGS = -10V<br>1.0<br>VGS =  - 3V<br>0 0.5<br>0 1 2 3 4 0 10 20 30 40<br>-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A)<br>Figure 14. On- Region Characteristics Figure 15. Normalized on-Resistance vs Drain<br>Current and Gate  Voltage<br>1.6 160<br> ID = -6.5A PULSE DURATION = 80 μ s<br>VGS = -10V DUTY CYCLE = 0.5%MAX<br>1.4<br>120<br>ID = -6.5A<br>1.2<br>TJ = 125 [o] C<br>80<br>1.0<br>40<br>0.8<br>TJ = 25 [o] C<br>0.6 0<br>-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10<br>TJ, JUNCTION TEMPERATURE ( [o] C) -VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 16. Normalized On-Resistance  Figure 17. On-Resistance vs Gate to<br>vs Junction Temperature Source Voltage<br>40 40<br>PULSE DURATION = 80 μ s VGS = 0V<br>DUTY CYCLE = 0.5%MAX 10<br>30<br>VDS = -5V 1<br>TJ = 25 [o] C<br>20<br>TJ = 25 [o] C 0.1 TJ = 150 [o] C<br>TJ = -55 [o] C<br>10<br>0.01<br>TJ = 150 [o] C<br>TJ = -55 [o] C<br>0 0.001<br>1 2 3 4 5 0.0 0.3 0.6 0.9 1.2 1.5<br>-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)<br>, DRAIN CURRENT (A)D NORMALIZED<br>-I<br>DRAIN TO SOURCE ON-RESISTANCE<br>)<br>Ω<br>m<br>(<br>, DRAIN TO<br>NORMALIZED<br>rDS(on)<br>SOURCE ON-RESISTANCE<br> DRAIN TO SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)<br>I-D<br>, REVERSE DRAIN CURRENT (A)<br>S<br>-I<br>**----- End of picture text -----**<br>


**Figure 18. Transfer Characteristics** 

**Figure 19. Source to Drain Diode Forward Voltage vs Source Current** 

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©2013 Fairchild Semiconductor Corporation FDD8424H Rev.1.5 

**7** 

## **Typical Characteristics (Q2 P-Channel)** TJ = 25°C unless otherwise noted 

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10 2000<br>Ciss<br>ID = -6.5A 1000<br>8<br>VDD = -15V VDD = -20V Coss<br>6<br>VDD = -25V<br>4<br>100 Crss<br>2 f = 1MHz<br>VGS = 0V<br>0 30<br>0 4 8 12 16 20 0.1 1 10 40<br>Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 20. Gate Charge Characteristics Figure 21. Capacitance vs Drain<br>to Source Voltage<br>30 25<br>20<br>10 TJ = 25 [o] C VGS =  - 10V<br>15<br>T J  = 125 [o] C<br>10<br>VGS =  - 4.5V<br>5<br>R θ JC = 3.5oC/W<br>1 0<br>0.001 0.01 0.1 1 10 100 25 50 75 100 125 150<br>tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE (oC)<br>Figure 22. Unclamped Inductive  Figure 23. Maximum   Continuous   Drain<br>Switching Capability Current  vs Case Temperature<br>100 10000<br>10us VGS = -10V<br>FOR TEMPERATURES<br>ABOVE 25 [o] C DERATE PEAK<br>10 100us 1000 CURRENT AS FOLLOWS:<br>THIS AREA IS I = I25  150 ---------------------- 125 – TC -<br>LIMITED BY r ds(on)<br>1ms TC = 25 [o] C<br>1 SINGLE PULSE 100<br>TJ = MAX RATED 10ms<br>R θ JC = 3.5 [o] C/W DC SINGLE PULSE<br>T C = 25 [o] C R θ JC = 3.5 [o] C/W<br>0.1 10<br>1 10 80 10-5 10-4 10-3 10-2 10-1 100 101 102 103<br>-VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s)<br>Figure 24. Forward Bias Safe                                            Figure 25. Single Pulse  Maximum<br>Operating Area Power Dissipation<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLTAGE(V)<br>GS<br>-V<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, AVALANCHE CURRENT(A)<br>IAS-<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, PEAK TRANSIENT POWER (W)P)(PK<br>**----- End of picture text -----**<br>


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©2013 Fairchild Semiconductor Corporation FDD8424H Rev.1.5 

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Typical Characteristics (Q2 P-Channel) TJ = 25°C unless otherwise noted<br>2<br>1 DUTY CYCLE-DESCENDING ORDER<br>D = 0.5<br>      0.2<br>0.1<br>      0.05 P DM<br>0.1       0.02<br>      0.01<br>t1<br>t 2<br>NOTES:<br>DUTY FACTOR: D = t 1 /t 2<br>SINGLE PULSE PEAK TJ = PDM x Z θJC  x R θJC  + TC<br>0.01<br>R θ JC = 3.5 [o] C/W<br>0.005<br>10-5 10-4 10-3 10-2 10-1 100 101<br>t, RECTANGULAR PULSE DURATION (s)<br>Figure 26. Transient Thermal Response Curve<br>IMPEDANCE, ZJC θ<br>NORMALIZED THERMAL<br>**----- End of picture text -----**<br>


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6.73<br>A<br>6.35 6.00 MIN<br>5.46 1.25<br>5.21 1.15<br>B<br>0.10 [M] C A B<br>6.50 MIN<br>6.22 6.25<br>5.97<br>1.01<br>0.64<br>3.00 MIN<br>1 5<br>1.14<br>0.68 0.81 0.80 MIN<br>[F]<br>0.61 4.56<br>0.70<br>0.55  1.14<br>0.10 [M] C A B  4.56<br>C<br>2.39<br>SEE 2.18<br>4.32 MIN 0.61<br>NOTE D<br>0.46<br>5.21 MIN<br>10.41<br>9.40<br>SEE DETAIL "A"<br>5 1<br>0.10 C<br>**----- End of picture text -----**<br>


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NOTES: UNLESS OTHERWISE SPECIFED 

- A. THIS PACKAGE CONFORMS TO JEDEC, TO252 VARIATION AD. 

- B. ALL DIMENSIONS ARE IN MILLIMETERS. 

- C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS 

- D. HEATSINK TOP EDGE COULD BE IN CHAMFERED CORNERS OR EDGE PROTRUSION. 

- E.  DIMENSIONS AND TOLERANCES AS PER ASME Y14.5-2009. 

- F EXCEPTION TO TO-252 STANDARD. 

- G. FILE NAME: TO252B05REV3 

- H. FAIRCHILDSEMICONDUCTOR 

DETAIL A SCALE 2:1 

## ~~—~~ 

## **TRADEMARKS** 

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 

AccuPower F-PFS OPTOPLANAR[®] AttitudeEngine™ Awinda[®] FRFETGlobal Power Resource[® ] SM ® TinyBoost LS ceNeRAL[®] ®* AX-CAPBitSiC[®] * GreenBridgeGreen FPS Power Supply WebDesignerPowerTrench[® ]  TinyCalcTinyBuck[®] Build it Now Green FPS e-Series PowerXS™ TinyLogic[®] CorePLUS G _max_  Programmable Active Droop TINYOPTO CorePOWER GTO QFET[®] TinyPower _CROSSVOLT_  IntelliMAX QS TinyPWM CTL ISOPLANAR Quiet Series TinyWire Current Transfer Logic Making Small Speakers Sound Louder RapidConfigure TranSiC Dual Cool™ DEUXPEED[®] MegaBuckand Better™ 2)  TRUECURRENTTriFault Detect[®] * ESBCEfficientMaxEcoSPARK ~~F~~ ®[®]  MICROCOUPLERMicroFETMicroPak2MicroPakMillerDrive  Saving our world, 1mW/W/kW at a time™ SignalWiseSMART STARTSolutions for Your SuccessSmartMax   UHCUltra FRFET ZZ... SerDes[®]   FACT Quiet SeriesFairchildFACTFastvCoreFETBenchFairchild SemiconductorFPS[®][®]  [®] mWSaverMotionGridMTiMTxMVNOPTOLOGICOptoHiTMotionMax[®][®][®] [®][®] [® ] SuperFETSuperSOTSuperSOTSuperSOTSupreMOSSPMSTEALTHSyncFET[®] [®] [®] -3 -6 -8 Xsens™仙童UniFETVCXVisualMaxVoltagePlusXS™ [®]   Sync-Lock™ 

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 

## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 

## **AUTHORIZED USE** 

Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild officer: (1) automotive or other transportation, (2) military/aerospace, (3) any safety critical application – including life critical medical equipment – where the failure of the Fairchild product reasonably would be expected to result in personal injury, death or property damage. Customer’s use of this product is subject to agreement of this Authorized Use policy. In the event of an unauthorized use of Fairchild’s product, Fairchild accepts no liability in the event of product failure. In other respects, this product shall be subject to Fairchild’s Worldwide Terms and Conditions of Sale, unless a separate agreement has been signed by both Parties. 

## **ANTI-COUNTERFEITING POLICY** 

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Terms of Use 

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

## **PRODUCT STATUS DEFINITIONS** 

**Definition of Terms** 

|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications may change<br>in anymanner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild<br>Semiconductor reserves the right to make changes at anytime without notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make<br>changes at anytime without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.<br>The datasheet is for reference information only.|



Rev. I77 

© Fairchild Semiconductor Corporation 

www.fairchildsemi.com 



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- [Supplier page](https://es.farnell.com/onsemi/fdd8424h/mosfet-dual-np-smd-d-pak/dp/1498953)
---

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