# Power MOSFET, N Channel, 250 V, 4.4 A, 0.9 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2453850RL/)

**URL**: https://novapart.co/products/FDD6N25TM/power-mosfet-n-channel-250-v-44-a-09-ohm-to-252aa
**SKU**: FDD6N25TM
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3490
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 50W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 50W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.9ohm |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 250V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4.4A |
| Drain Source On State Resistance | 0.9ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2453850RL/)

**==> picture [46 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
May 2014<br>**----- End of picture text -----**<br>


## **FDD6N25** 

## **N-Channel UniFET[TM] MOSFET 250 V, 4.4 A, 1.1** Ω 

## **Features** 

- RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 2.2 A 

- Low Gate Charge (Typ. 4.5 nC) 

- Low Crss (Typ. 5 pF) 

- 100% Avalanche Tested 

## **Applications** 

## **Description** 

UniFET[TM ] MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. 

- LCD/LED/PDP TV 

- Consumer Appliances 

- Lighting 

- Uninterruptible Power Supply 

- AC-DC Power Supply 

||||||**D**|**D**||||
|---|---|---|---|---|---|---|---|---|---|
|**D-PAK**<br>**G**<br>**S**<br>**D**<br>**G**<br>a||**S**<br>~~@®~~||||||||
|**Absolute Maximum Ratings**TC= 25oC unless otherwise noted.||||||||||
|**Symbol**<br>**Parameter**<br>**FDD6N25TM**<br>**Unit**<br>VDSS<br>Drain-Source Voltage<br>250<br>V<br>ID<br>Drain Current<br>- Continuous (TC= 25°C)<br>- Continuous (TC= 100°C)<br>4.4<br>2.6<br>A<br>A<br>IDM<br>Drain Current<br>- Pulsed<br>(Note 1)<br>18<br>A<br>VGSS<br>Gate-Source voltage<br>±30<br>V<br>~~—->Sp~~<br>~~pf~~<br>~~fp~~||||||||||
|EAS<br>Single Pulsed Avalanche Energy||(Note 2)||||||45|mJ|
|IAR<br>Avalanche Current||(Note 1)||||||4.4|A|
|EAR<br>Repetitive Avalanche Energy||(Note 1)||||||5|mJ|
|dv/dt<br>Peak Diode Recovery dv/dt<br>PD<br>Power Dissipation<br>(TC= 25°C)<br>- Derate Above 25°C<br>TJ,TSTG<br>Operating and Storage Temperature Range<br>~~ns~~||(Note 3)|||||-55 to +150|4.5<br>50<br>0.4<br>-55 to +150|V/ns<br>W<br>W/°C<br>°C|
|TL<br>Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds||||||||300|°C|
|**Thermal Characteristics**||||||||||
|**Symbol**<br>**Parameter**<br>**FDD6N25TM**<br>**Unit**<br>RθJC<br>Thermal Resistance, Junction-to-Case, Max.<br>2.5<br>°C/W<br>RθJA<br>Thermal Resistance, Junction-to-Ambient, Max.<br>110<br>~~—————————~~||||||||||



www.fairchildsemi.com 

©2007 Fairchild Semiconductor Corporation FDD6N25 Rev. C2 

**1** 

## **Package Marking and Ordering Information** 

|**Symbol**<br>~~a tr~~|**Parameter**<br>~~tr~~|**Conditions**<br>~~tr~~|**Min.**<br>~~tr~~|**Typ.**<br>~~tr~~|**Max**<br>~~tr~~|**Unit**<br>~~tr~~|
|---|---|---|---|---|---|---|
|**Off Characteristics**<br>~~a tr~~<br>~~——~~|||||||
|BVDSS<br>~~——~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~——~~<br>~~ee ee~~|VGS= 0 V, ID= 250μA<br>~~——~~<br>~~ee ee~~|250<br>~~——~~<br>~~ee~~|--<br>~~——~~<br>~~ee~~|--<br>~~——~~|V<br>~~——~~|
|ΔBVDSS<br>/ΔTJ<br>~~a~~<br>~~a~~|Breakdown Voltage Temperature<br>Coefficient<br>~~ee ee~~<br>~~ee~~|ID= 250μA, Referenced to 25°C<br>~~ee ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~|0.25<br>~~ee~~<br>~~ee~~|--|V/°C|
|IDSS<br>~~a ~~<br>~~a~~|Zero Gate Voltage Drain Current<br> ~~ee ee~~<br>~~ee~~|VDS= 250 V, VGS= 0 V<br>VDS= 200 V, TC= 125°C<br>~~ee ee ~~<br>~~ee~~|--<br>--<br> ~~ee ~~<br>~~ee~~|--<br>--<br> ~~ee~~<br>~~ee~~|1<br>10|μA<br>μA|
|IGSSF<br>~~a~~<br>~~Ss~~<br>~~—~~|Gate-Body Leakage Current, Forward<br>~~ee~~<br>~~Ss~~<br>~~—~~<br>~~—_~~|VGS= 30 V, VDS= 0 V<br>~~ee ~~<br>~~Ss~~<br>~~—_~~<br>~~—_—~~|--<br> ~~ee ~~<br>~~Ss~~|--<br> ~~ee~~<br>~~Ss~~|100<br>~~Ss~~|nA<br>~~Ss~~|
|IGSSR<br>~~Ss~~<br>~~—~~|Gate-Body Leakage Current, Reverse<br>~~Ss~~<br>~~—~~<br>~~—_~~|VGS= -30 V, VDS= 0 V<br>~~Ss~~<br>~~—_~~<br>~~—_—~~|--<br>~~Ss~~|--<br>~~Ss~~|-100<br>~~Ss~~|nA<br>~~Ss~~|
|**On Characteristics**<br>~~—~~<br>~~—_~~<br>~~—_—~~|||||||
|VGS(th)<br>~~—~~<br>~~_ Aa~~|Gate Threshold Voltage<br>~~—~~<br>~~—_~~<br>~~Aai~~|VDS= VGS, ID= 250μA<br>~~—_~~<br>~~—_—~~<br>~~i~~|3.0<br>|--<br>|5.0<br>|V<br>|
|RDS(on)<br>~~—~~<br>~~_ Aa~~|Static Drain-Source<br>On-Resistance<br>~~—~~<br>~~—_~~<br>~~Aai~~|VGS= 10 V, ID= 2.2 A<br>~~—_~~<br>~~—_—~~<br>~~iNe~~|--<br>~~Ne~~|0.9<br>~~Ne~~|1.1<br>~~Ne~~|Ω<br>~~Ne~~|
|gFS<br>~~_ Aa~~|Forward Transconductance<br>~~Aai~~|VDS= 40 V, ID= 2.2 A<br>~~iNe~~|--<br>~~Ne~~|5.5<br>~~Ne~~<br>~~;§S~~|--<br>~~Ne~~<br>~~;§S~~|S<br>~~Ne~~|
|**Dynamic Characteristics**<br>~~_ Aa i~~<br>~~EEC“~~<br>~~;§S~~|||||||
|Ciss<br>~~Ss~~|Input Capacitance<br>~~Ss~~|VDS= 25 V, VGS= 0 V,<br>f = 1 MHz<br>~~Ss~~|--<br>~~Ss~~|194<br>~~;§S~~<br>~~Ss~~|250<br>~~;§S~~<br>~~Ss~~|pF<br>~~Ss~~|
|Coss<br>~~Ss~~|Output Capacitance<br>~~Ss~~||--<br>~~Ss~~|38<br>~~Ss~~|50<br>~~Ss~~|pF<br>~~Ss~~|
|Crss<br>~~Ss~~|Reverse Transfer Capacitance<br>~~Ss~~||--<br>~~Ss~~|5<br>~~Ss~~|8<br>~~Ss~~|pF<br>~~Ss~~|
|**Switching Characteristics**<br>~~=———~~<br>~~==~~|||||||
|td(on)<br>~~=———~~|Turn-On Delay Time<br>~~=———~~|VDD= 125 V, ID= 6 A,<br>VGS= 10 V, RG= 25Ω<br>(Note 4)<br>~~==~~|--<br>~~==~~|10<br>~~==~~|30<br>~~==~~|ns<br>~~==~~|
|tr<br>~~=———~~|Turn-On Rise Time<br>~~=———~~||--<br>~~==~~|25<br>~~==~~|60<br>~~==~~|ns<br>~~==~~|
|td(off)<br>~~=———~~|Turn-Off Delay Time<br>~~=———~~||--<br>~~==~~|7<br>~~==~~|24<br>~~==~~|ns<br>~~==~~|
|tf<br>~~=———~~|Turn-Off Fall Time<br>~~=———~~||--<br>~~==~~|12<br>~~==~~|34<br>~~==~~|ns<br>~~==~~|
|Qg<br>~~=———~~<br>~~a~~|Total Gate Charge<br>~~=———~~<br>~~a~~|VDS= 200 V, ID= 6 A,<br>VGS= 10 V<br>(Note 4)<br>~~==~~<br>~~a~~|--<br>~~==~~<br>~~a~~|4.5<br>~~==~~<br>~~a~~|6<br>~~==~~<br>~~a~~|nC<br>~~==~~<br>~~a~~|
|Qgs<br>~~a~~|Gate-Source Charge<br>~~a~~||--<br>~~a~~|1.5<br>~~a~~<br>~~=~~|--<br>~~a~~<br>~~=~~|nC<br>~~a~~<br>~~=~~|
|Qgd<br>~~a~~|Gate-Drain Charge<br>~~a~~||--<br>~~a~~|1.8<br>~~a~~<br>~~=~~|--<br>~~a~~<br>~~=~~|nC<br>~~a~~<br>~~=~~|
|**Drain-Source Diode Characteristics and Maximum Ratings**<br>~~——_—_=_~~<br>~~=~~|||||||
|IS<br>~~——_—_=_~~|Maximum Continuous Drain-Source Diode Forward Current<br>~~——_—_=_~~||--<br>~~——_—_=_~~|--<br>~~——_—_=_~~<br>~~=~~|4.4<br>~~——_—_=_~~<br>~~=~~|A<br>~~——_—_=_~~<br>~~=~~|
|ISM<br>~~——_—_=_~~<br>~~ee~~|Maximum Pulsed Drain-Source Diode Forward Current<br>~~——_—_=_~~<br>~~ee~~||--<br>~~——_—_=_~~<br>~~ee~~|--<br>~~——_—_=_~~<br>~~=~~<br>~~ee~~|18<br>~~——_—_=_~~<br>~~=~~<br>~~ee~~|A<br>~~——_—_=_~~<br>~~=~~<br>~~ee~~|
|VSD<br>~~ee~~|Drain-Source Diode Forward Voltage<br>~~ee~~|VGS= 0 V, IS= 4.4 A<br>~~ee~~|--<br>~~ee~~|--<br>~~ee~~|1.4<br>~~ee~~|V<br>~~ee~~|
|trr<br>~~a~~|Reverse Recovery Time<br>~~a~~|VGS= 0 V, IS= 6 A,<br>dIF/dt =100 A/μs<br>~~a~~|--<br>~~a~~|145<br>~~a~~|--<br>~~a~~|ns<br>~~a~~|
|Qrr<br>~~a~~|Reverse Recovery Charge<br>~~a~~||--<br>~~a~~|0.55<br>~~a~~|--<br>~~a~~|μC<br>~~a~~|



2. L = 3.7 mH, IAS = 4.4 A, VDD = 50 V, RG = 25 Ω , starting TJ = 25 ° C. 

3. ISD ≤ 4.4 A, di/dt ≤ 200 A/ μ s, VDD ≤ BVDSS, starting TJ = 25 ° C. 

4. Essentially independent of operating temperature typical characteristics. 

**Notes:** 1. Repetitive rating: pulse-width limited by maximum junction temperature. 

www.fairchildsemi.com 

©2007 Fairchild Semiconductor Corporation FDD6N25 Rev. C2 

**2** 

## **Typical Performance Characteristics** 

## **Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics** 

**==> picture [430 x 549] intentionally omitted <==**

**----- Start of picture text -----**<br>
                    VTop :        15.0 V      GS<br>                10.0 V<br>                  8.0 V<br>101                   7.0 V 101<br>                  6.5 V<br>                  6.0 V<br>Bottom :    5.5 V<br>150oC<br>100<br>25 o C<br>-55oC<br>* Notes : * Notes :<br>10-1    1. 250    2. TC = μ  25 s Pulse Test [o] C    1. V   2. 250DS = 40V μ s Pulse Test<br>10-1 100 101 100 2 4 6 8 10 12<br>VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]<br>Figure 3. On-Resistance Variation vs.  Figure 4. Body Diode Forward Voltage<br>                     Drain Current and Gate Voltage                   Variation vs. Source Current<br>                                                                                                               and Temperatue<br>6<br>5<br>4 101<br>VGS = 10V<br>3<br>2<br>VGS = 20V 150 o C<br>25 o C * Notes :<br>1 * Note : TJ = 25 [o] C    2. 250   1. VGS = 0V μ s Pulse Test<br>wiVa 100<br>0 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>ID, Drain Current [A] VSD, Source-Drain voltage [V]<br>Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics<br>400 12<br>C iss  = C gs  + C gd  (C ds  = shorted)<br>350 Coss = Cds + Cgd<br>Crss = Cgd 10 V DS = 50V<br>300 C oss VDS = 125V<br>250 Ciss 8 V DS = 200V<br>200 6<br>150<br>4<br>* Note :<br>100 Crss    2. f = 1 MHz    1. VGS = 0 V<br>50 2<br>* Note : ID = 6A<br>010-1 100 101 0 0 1 2 3 4 5<br>VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]<br>, Drain Current [A]ID , Drain Current [A]ID<br>], Drain-Source On-Resistance<br>Ω , Reverse Drain Current [A]<br> [DS(ON) IDR<br>R<br>Capacitances [pF]<br>, Gate-Source Voltage [V]<br>GS<br>V<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

©2007 Fairchild Semiconductor Corporation FDD6N25 Rev. C2 

**3** 

## **Typical Performance Characteristics (Continued)** 

**==> picture [424 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation<br>                        vs. Temperature                                                           vs. Temperature<br>1.2 3.0<br>2.5<br>1.1<br>2.0<br>1.0 1.5<br>1.0<br>0.9 *  Notes :<br>   2. I   1. VDGS = 250 = 0 V μ A 0.5 * Notes :   1. VGS = 10 V<br>   2. ID = 2.2 A<br>0.8<br>-100 -50 0 50 100 150 200 0.0<br>-100 -50 0 50 100 150 200<br>TJ, Junction Temperature [oC] TJ, Junction Temperature [oC]<br>Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current<br>                                                                                                                 vs. Case Temperature<br>5<br>101 a- d C > a2 -a3g e “eAaaL<ee. . . 2 . 7 ~.ee.. ~ < ~ S . “ eeS= .= 10 ms ~ . “h 1 ms100  ~ S Soy μ s os~ 1 | 4<br>100 L - . 2 Ois Limited bperation in This Area y R  DS(on) ~ ~ 100 ms DC ~S . q ~ . .ea.. ee>A. Jy i) 32<br>10-1 *   1. T Notes : C  = 25  o C 1<br>   2. T J = 150 oC<br>   3. Single Pulse<br>10-2 0<br>100 101 102 25 50 75 100 125 150<br>VDS, Drain-Source Voltage [V] TC, Case Temperature [ o C]<br>                                               Figure 11. Transient Thermal Response Curve<br>1 0 0 D = 0 .5<br>0 .2<br>0 .1 PDM<br>0 .0 5 t1<br>t2<br>1 0 -1 0 .0 2<br>0 .0 1 *  N o te s  :<br>   1 . Z   2 . D u ty F a c to r, D = t θ  JC (t) =  2 .5   [o] C /W 1 /t M a x. 2<br>sin g le  p u lse    3 . T J M  - T C  =  P D M  * Z θ  J C (t)<br>1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1<br>t 1 , S q u a re  W a ve  P u ls e  D u ra tio n  [s e c ]<br>, (Normalized) , (Normalized)<br>BVDSS RDS(ON)<br>Drain-Source On-Resistance<br>Drain-Source Breakdown Voltage<br>, Drain Current [A]ID , Drain Current [A]ID<br>oC/W]   (t), Thermal Response<br>(t), Thermal Response [   ZJC θ ZJC θ<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

©2007 Fairchild Semiconductor Corporation FDD6N25 Rev. C2 

**4** 

**==> picture [432 x 521] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS<br>Same Type<br>50KΩ as DUT Qg<br>12V 200nF 300nF 10V<br>VGS VDS Qgs Qgd<br>DUT<br>IG = const. 3mA<br>Charge<br> Figure 12. Gate Charge Test Circuit & Waveform<br>VDS RL VDS 90%<br>VGS VDD<br>RG<br>10%<br>V 10V GS DUT VGS<br>td(on) tr td(off) tf<br>t on t off<br> Figure 13. Resistive Switching Test Circuit & Waveforms<br>VDS L EAS = ----12 L IAS2 --------------------BVBVDSSDSS- VDD<br>I D BVDSSIAS<br>RG VDD ID (t)<br>VV 10V GSGS DUT VDD VDS (t)<br>t p t p Time<br>**----- End of picture text -----**<br>


**Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms** 

www.fairchildsemi.com 

©2007 Fairchild Semiconductor Corporation FDD6N25 Rev. C2 

**5** 

**==> picture [335 x 549] intentionally omitted <==**

**----- Start of picture text -----**<br>
DUT +<br>VDS<br>_<br>I SD<br>L<br>Driver<br>RG<br>Same Type<br>as DUT VDD<br>VGS • dv/dt controlled by  RG<br>• ISD controlled by pulse period<br>Gate Pulse Width<br>VGS D = --------------------------<br>Gate Pulse Period 10V<br>( Driver )<br>ff}<br>IFM , Body Diode Forward Current<br>I SD<br>( DUT ) di/dt<br>IRM<br>4 Ne<br>Body Diode Reverse Current<br>VDS<br>( DUT ) Body Diode Recovery dv/dt<br>VSD VDD<br>eerie<br>Body Diode<br>Forward Voltage Drop<br> Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

©2007 Fairchild Semiconductor Corporation FDD6N25 Rev. C2 

**6** 

## **Mechanical Dimensions** 

## **Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB** 

_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ 

_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003_ 

www.fairchildsemi.com 

©2007 Fairchild Semiconductor Corporation FDD6N25 Rev. C2 

**7** 

## **TRADEMARKS** 

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 

AccuPower™AX-CAP[®] * F-PFS™FRFET[®] tm[®] ®* [Eceven BitSiC™ Global Power Resource[SM] PowerTrench[®] Build it Now™ GreenBridge™ PowerXS™ TinyBoost[®] CorePLUS™ Green FPS™ Programmable Active Droop™ TinyBuck[®] CorePOWER™ Green FPS™ e-Series™ QFET[®] TinyCalc™ _CROSSVOLT_ ™ G _max_ ™ QS™ TinyLogic[®] TINYOPTO™ CTL™ GTO™ Quiet Series™ Current Transfer Logic™ IntelliMAX™ RapidConfigure™ TinyPower™ DEUXPEED[®] ISOPLANAR™ ™ TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder o) TinyWire™TranSiC™ EcoSPARK[®] and Better™ Saving our world, 1mW/W/kW at a time™ TriFault Detect™ EfficentMax™ MegaBuck™ SignalWise™ TRUECURRENT[®] * ESBC™ MICROCOUPLER™ SmartMax™ ® MicroFET™ SMART START™ μ SerDes™ MicroPak™ Solutions for Your Success™ Fairchild ~~F~~[®] MicroPak2™ SPM[®] WZ4..... Fairchild Semiconductor[®] MillerDrive™ STEALTH™ UHC[®] FACT Quiet Series™ MotionMax™ SuperFET[®] Ultra FRFET™ FACT[®] mWSaver[®] SuperSOT™-3 UniFET™ FAST[®] OptoHiT™ SuperSOT™-6 VCX™ FastvCore™ OPTOLOGIC[®] SuperSOT™-8 VisualMax™ FETBench™ OPTOPLANAR[®] SupreMOS[®] VoltagePlus™ FPS™ SyncFET™ XS™ Sync-Lock™ 仙童 ™ 

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 

## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 

As used here in: 

1. Life support devices or systems are devices or systems which, (a) are 2. intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 

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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. 

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications<br>may change in any manner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later<br>date. Fairchild Semiconductor reserves the right to make changes at any time without<br>notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to<br>make changes at any time without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild<br>Semiconductor. The datasheet is for reference information only.|



Rev. I68 

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©2007 Fairchild Semiconductor Corporation FDD6N25 Rev. C2 

**8** 



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