# Power MOSFET, N Channel, 20 V, 21 A, 0.026 ohm, TO-252 (DPAK), Surface Mount ![Product image](https://novapart.co/image/farnell:3003908RL/) **URL**: https://novapart.co/products/FDD6530A/power-mosfet-n-channel-20-v-21-a-0026-ohm-to-252 **SKU**: FDD6530A **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.2550 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | Channel Type | N Channel | | Power Dissipation | 33W | | Drain Source On State Resistance | 0.026ohm | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3003908RL/) ## **FDD6530A** **==> picture [436 x 494] intentionally omitted <==** **----- Start of picture text -----**
20V N-Channel PowerTrench [] MOSFET Features
General Description • 21 A, 20 V RDS(ON) = 32 mΩ @ VGS = 4.5 V
RDS(ON) = 47 mΩ @ VGS = 2.5 V
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC • Low gate charge (6.5 nC typical)
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for • Fast switching
low gate charge, low RDS( ON) and fast switching speed.
• High performance trench technology for extremely
Applications low RDS(ON)
• DC/DC converter
• Motor drives .
D
D
G
S G
TO-252
eS «4
S
Absolute Maximum Ratings TA=25 [o] C unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 20 V
VGSS Gate-Source Voltage ±8 V
ID Drain Current – Continuous (Note 3) 21 A
re eee
– Pulsed (Note 1a) 100
PD Power Dissipation (Note 1) 33 W
(Note 1a) 3.3
(Note 1b) 1.6
a TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case (Note 1) 4.5 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 45 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W
re Package Marking and Ordering Information re
Device Marking Device Reel Size Tape width Quantity
FDD6530A FDD6530A 13’’ 16mm 2500 units
ee
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Publication Order Number: FDD6530A/D 2001 Semiconductor Components Industries, LLC. September-2017, Rev. 2 ||**Electrical Characteristics**
TA= 25°C unless otherwise noted|**Electrical Characteristics**
TA= 25°C unless otherwise noted|**Electrical Characteristics**
TA= 25°C unless otherwise noted||||| |---|---|---|---|---|---|---|---| ||**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Units**| ||**Drain-Source Avalanche Ratings (Note 2)**||||||| ||WDSS|Drain-Source Avalanche Energy|Single Pulse,
VDD= 10 V|||55|mJ| ||IAR|Drain-Source Avalanche Current||||8|A| ||**Off Characteristics**||||||| ||BVDSS|Drain–Source Breakdown Voltage|VGS= 0 V,
ID= 250µA|20|||V| ||∆BVDSS
∆TJ|Breakdown Voltage Temperature
Coefficient|ID= 250µA, Referenced to 25°C||15||mV/°C| ||IDSS|Zero Gate Voltage Drain Current|VDS= 16 V,
VGS= 0 V|||1|µA| ||IGSSF|Gate–BodyLeakage,Forward|VGS= 8 V,
VDS= 0 V|||100|nA| ||IGSSR|Gate–BodyLeakage,Reverse|VGS= –8 V,
VDS= 0 V|||–100|nA| ||**On Characteristics**
**(Note 2)**||||||| ||VGS(th)|Gate Threshold Voltage|VDS= VGS,
ID= 250µA|0.4|0.9|1.2|V| ||∆VGS(th)
∆TJ|Gate Threshold Voltage
Temperature Coefficient|ID= 250µA, Referenced to 25°C||–3||mV/°C| ||RDS(on)|Static Drain–Source
On–Resistance|VGS= 4.5 V,
ID= 8 A
VGS= 2.5 V,
ID= 6.6 A
VGS= 4.5V, ID=8A,TJ= 125°C||26
36
36|32
47
48|mΩ| ||ID(on)|On–State Drain Current|VGS= 4.5 V,
VDS= 5 V|20|||A| ||gFS|Forward Transconductance|VDS= 5 V,
ID= 8 A||21||S| ||**Dynamic Characteristics**||||||| ||Ciss|Input Capacitance|VDS= 10 V,
VGS= 0 V,
f = 1.0 MHz||710||pF| ||Coss|Output Capacitance|||173||pF| ||Crss|Reverse Transfer Capacitance|||84||pF| ||**Switching Characteristics**
**(Note 2)**||||||| ||td(on)|Turn–On DelayTime|VDD= 10 V,
ID= 1 A,
VGS= 4.5 V,
RGEN= 6||8|16|ns| ||tr|Turn–On Rise Time|||7|14|ns| ||td(off)|Turn–Off DelayTime|||18|32|ns| ||tf|Turn–Off Fall Time|||4|8|ns| ||Qg|Total Gate Charge|VDS= 10 V,
ID= 8 A,
VGS= 4.5 V||6.5|9|nC| ||Qgs|Gate–Source Charge|||1.3||nC| ||Qgd|Gate–Drain Charge|||1.9||nC| ||**Drain–Source Diode Characteristics and Maximum Ratings**||||||| ||IS|Maximum Continuous Drain–Source Diode Forward Current||||2.7|A| ||VSD|Drain–Source Diode Forward
Voltage|VGS= 0 V,
IS= 2.7 A
(Note 2)||0.8|1.2|V| **Notes:** **1.** RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. **==> picture [73 x 74] intentionally omitted <==** a) RθJA = 45°C/W when mounted on a b) RθJA = 96°C/W when mounted 1in[2] pad of 2 oz copper on a minimum pad. Scale 1 : 1 on letter size paper **2.** Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% - ~~P~~ D - **3.** Maximum current is calculated as: - RDS(ON) - where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A www.onsemi.com 2 ## **Typical Characteristics** **==> picture [425 x 538] intentionally omitted <==** **----- Start of picture text -----**
30 1.8
VGS = 4.5V 3.0V
3.5V
24 1.6
2.5V VGS = 2.5V
18 1.4
3.0V
12 1.2
3.5V
2.0V 4.0V
4.5V
6 1
0 0.8
0 1 2 3 4 5 0 6 12 18 24 30
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8 0.12
1.6 ID = 8 A ID = 4 A
VGS = 4.5V
0.09
1.4
TA = 125oC
1.2 0.06
1 TA = 25oC
0.03
0.8
0.6 0
-50 -25 0 25 50 75 100 125 150 175 1 2 3 4 5
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with
Temperature. Gate-to-Source Voltage.
100
15 VGS = 0V
VDS = 5V TA =-55oC 25 [o] C 10
12 TA = 125oC
125 [o] C 1
9 25 [o] C
0.1
-55 [o] C
6 0.01
3 0.001
0.0001
0
0 0.2 0.4 0.6 0.8 1 1.2
0.5 1 1.5 2 2.5
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
, NORMALIZED
, DRAIN CURRENT (A)ID RDS(ON)
DRAIN-SOURCE ON-RESISTANCE
, NORMALIZED
DS(ON) , ON-RESISTANCE (OHM)
R DS(ON)
R
DRAIN-SOURCE ON-RESISTANCE
, DRAIN CURRENT (A)ID
, REVERSE DRAIN CURRENT (A)IS
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www.onsemi.com 3 ## **Typical Characteristics** **==> picture [428 x 533] intentionally omitted <==** **----- Start of picture text -----**
5
1200
ID = 8 A VDS = 5V 10V
f = 1MHz
4 1000 VGS = 0 V
15V CISS
800
3
600
2
400
COSS
1
200
CRSS
0 0
0 2 4 6 8 0 4 8 12 16 20
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
1000 100
SINGLE PULSE
100 RDS(ON) LIMIT 1ms 100 µ s 80 Rθ T JAA = 96°C/W = 25°C
10ms
10 100ms 60
1s
10s
1 40
VGS = 10V DC
SINGLE PULSE
0.1 RθJA = 96oC/W 20
TA = 25 [o] C
0.01 0
0.1 1 10 100 0.01 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2 R θJA (t) = r(t) + R θJA
0.1 0.1 RθJA = 96 °C/W
0.05
P(pk)
0.02
t 1
0.01
0.01 t2
SINGLE PULSE T J - T A = P * Rθ JA (t)
Duty Cycle, D = t 1 / t 2
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
CAPACITANCE (pF)
, GATE-SOURCE VOLTAGE (V)
GS
V
, DRAIN CURRENT (A)ID
P(pk), PEAK TRANSIENT POWER (W)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
**----- End of picture text -----**
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