# Power MOSFET, N Channel, 60 V, 50 A, 0.0101 ohm, TO-252 (DPAK), Surface Mount
**URL**: https://novapart.co/products/FDD5353/power-mosfet-n-channel-60-v-50-a-00101-ohm-to-252
**SKU**: FDD5353
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5580
**Stock**: 10+
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0101ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; P
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 69W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 50A |
| Drain Source On State Resistance | 0.0101ohm |
| Gate Source Threshold Voltage Max | 1.8V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2322583RL/)
**==> picture [463 x 57] intentionally omitted <==**
**----- Start of picture text -----**
yf April 2015
FDD5353
N-Channel Power Trench [®] MOSFET
**----- End of picture text -----**
## **60V, 50A, 12.3m**
## **Features**
- Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A
- Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5A
- 100% UIL Tested
- RoHS Compliant
## **General Description**
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench **[®]** process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
## **Application**
- Inverter
- Synchronous rectifier
- Primary switch
**==> picture [276 x 107] intentionally omitted <==**
**----- Start of picture text -----**
D
D
G
G
S
oe D-PAKTO -252
(TO-252)
S
**----- End of picture text -----**
**MOSFET Maximum Ratings** TC = 25°C unless otherwise noted
|**Symbol**
**Parameter**||||**Ratings**|**Ratings**||**Units**|
|---|---|---|---|---|---|---|---|
|VDS
Drain to Source Voltage|||||60||V|
|VGS
Gate to Source Voltage|||||±20||V|
|Drain Current -Continuous TC = 25°C||= 25°C|||50|||
|ID
-Continuous TA= 25°C||= 25°C(Note 1a)||11.5|||A|
|-Pulsed|||||100|||
|EAS
Single Pulse Avalanche Energy||(Note 3)|||253||mJ|
|PD
Power Dissipation TC= 25°C
Power Dissipation TA= 25°C||= 25°C(Note 1a)|||69
3.1||W|
|TJ, TSTG
Operatingand Storage Junction Temperature Range||||-55 to +150|-55 to +150||°C|
|**Thermal Characteristics**||||||||
|**Package Marking and Ordering Information**
RJC
Thermal Resistance, Junction to Case
1.8
°C/W
RJA
Thermal Resistance, Junction to Ambient(Note 1a)
40
**Device Marking**
**Device**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
FDD5353
FDD5353
D-PAK (TO-252)
13’’
16mm
2500 units
~~—ee~~||||||||
©2013 Fairchild Semiconductor Corporation **1** FDD5353 Rev.1.4
www.fairchildsemi.com
**Electrical Characteristics** TJ = 25°C unless otherwise noted
|**Off Characteristics**
**On Characteristics**
**Dynamic Characteristics**
**Switching Characteristics**
**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
BVDSS
Drain to Source Breakdown Voltage
ID= 250A, VGS= 0V
60
V
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
ID= 250A, referenced to 25°C
77
mV/°C
IDSS
Zero Gate Voltage Drain Current
VGS = 0V, VDS= 48V,
1
A
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS = 0V
±100
nA
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250A
1.0
1.8
3.0
V
VGS(th)
TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250A, referenced to 25°C
-8
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= 10V, ID= 10.7A
10.1
12.3
m
VGS= 4.5V, ID= 9.5A
12.1
15.4
VGS= 10V, ID= 10.7A, TJ = 125°C
16.7
20.3
gFS
Forward Transconductance
VDD= 5V, ID= 10.7A
41
S
Ciss
Input Capacitance
VDS= 30V, VGS= 0V,
f = 1MHz
2420
3215
pF
Coss
Output Capacitance
215
285
pF
Crss
Reverse Transfer Capacitance
120
180
pF
Rg
Gate Resistance
f = 1MHz
1.7
~~————aree~~
~~=~~
~~EEEE~~|**Off Characteristics**
**On Characteristics**
**Dynamic Characteristics**
**Switching Characteristics**
**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
BVDSS
Drain to Source Breakdown Voltage
ID= 250A, VGS= 0V
60
V
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
ID= 250A, referenced to 25°C
77
mV/°C
IDSS
Zero Gate Voltage Drain Current
VGS = 0V, VDS= 48V,
1
A
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS = 0V
±100
nA
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250A
1.0
1.8
3.0
V
VGS(th)
TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250A, referenced to 25°C
-8
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= 10V, ID= 10.7A
10.1
12.3
m
VGS= 4.5V, ID= 9.5A
12.1
15.4
VGS= 10V, ID= 10.7A, TJ = 125°C
16.7
20.3
gFS
Forward Transconductance
VDD= 5V, ID= 10.7A
41
S
Ciss
Input Capacitance
VDS= 30V, VGS= 0V,
f = 1MHz
2420
3215
pF
Coss
Output Capacitance
215
285
pF
Crss
Reverse Transfer Capacitance
120
180
pF
Rg
Gate Resistance
f = 1MHz
1.7
~~————aree~~
~~=~~
~~EEEE~~|
|---|---|
|td(on)
Turn-On DelayTime
11
20
ns||
|VDD= 30V, ID= 10.7A,
tr
Rise Time
6
11
ns||
|VGS= 10V, RGEN= 6
td(off)
Turn-Off DelayTime
36
58
ns||
|**Drain-Source Diode Characteristics**
tf
Fall Time
4
10
ns
Qg
Total Gate Charge
VGS= 0V to 10V
VDD= 30V,
ID= 10.7A
46
65
nC
Qg
Total Gate Charge
VGS= 0V to 4.5V
23
32
nC
Qgs
Gate to Source Charge
7
nC
Qgd
Gate to Drain “Miller” Charge
9
nC
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = 10.7A(Note 2)
0.8
1.3
V
VGS = 0V, IS = 2.6A(Note 2)
0.7
1.2
trr
Reverse RecoveryTime
IF= 10.7A, di/dt = 100A/s
28
45
ns
Qrr
Reverse RecoveryCharge
21
34
nC
Notes**:**
**1:** RJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
~~See ====~~
~~SS~~
~~= ==~~||
|RJCis guaranteed by design while RJAis determined by the user’s board design.||
|40°C/W when mounted on a
1 in2pad of 2 oz copper
96°C/W
when
mounted
on a minimum pad.
a)
b)||
- **2:** Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.
- **3:** EAS of 253mJ is based on starting TJ = 25°C, L = 3mH, IAS = 13A, VDD = 60V, VGS = 10V. 100% test at L = 0.1mH, IAS = 41A.
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation FDD5353 Rev.1.4
**2**
## **Typical Characteristics** TJ = 25°C unless otherwise noted
**==> picture [463 x 557] intentionally omitted <==**
**----- Start of picture text -----**
100 3.0
VGS = 10V VGS = 3V VGS = 3.5V
80 V GS = 4.5V 2.5
VGS = 4V VGS = 4V
60 2.0
VGS = 3.5V VGS = 4.5V
40 1.5
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
20 VGS = 3V 1.0 PULSE DURATION = 80 s V GS = 10V
DUTY CYCLE = 0.5%MAX
0 0.5
0 1 2 3 4 5 0 20 40 60 80 100
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0 40
1.8 VIDGS = 10.7A = 10V 32 PULSE DURATION = 80DUTY CYCLE = 0.5%MAX s
1.6 ID = 10.7A
1.4 24
1.2 TJ = 125 [o] C
16
1.0
0.8
8 T J = 25 [o] C
0.6
0.4 0
-75 -50 -25 0 25 50 75 100 125 150 2 3 4 5 6 7 8 9 10
TJ, JUNCTION TEMPERATURE ( [o] C ) VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to
vs Junction Temperature Source Voltage
100 200
PULSE DURATION = 80 s 100 VGS = 0V
DUTY CYCLE = 0.5%MAX
80
VDS = 5V 10
TJ = 150 [o] C
60
1
TJ = 25 [o] C
TJ = 150 [o] C
40 0.1
TJ = 25 [o] C
20 0.01 TJ = -55 [o] C
TJ = -55 [o] C
0 0.001
1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
NORMALIZED
DRAIN CURRENT (A)
,
ID
DRAIN TO SOURCE ON-RESISTANCE
)
( m
DRAIN TO
NORMALIZED
rDS(on),
SOURCE ON-RESISTANCE
DRAIN TO SOURCE ON-RESISTANCE
, DRAIN CURRENT (A)
ID
, REVERSE DRAIN CURRENT (A)
IS
**----- End of picture text -----**
**Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage**
**Figure 4. On-Resistance vs Gate to Source Voltage**
**Figure 5. Transfer Characteristics**
**Figure 6. Source to Drain Diode Forward Voltage vs Source Current**
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation FDD5353 Rev.1.4
**3**
**Typical Characteristics** TJ = 25°C unless otherwise noted
**==> picture [469 x 575] intentionally omitted <==**
**----- Start of picture text -----**
10 10000
ID = 10.7A VDD = 20V Ciss
8
1000
6 Coss
VDD = 30V
4
VDD = 40V 100
Crss
2 f = 1MHz
VGS = 0V
0 10
0 10 20 30 40 50 0.1 1 10 30
Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain
to Source Voltage
100 60
50
VGS = 10V
40
TJ = 25 [o] C Limited by Package
10 30
VGS = 4.5V
20
T J = 125 [o] C R JC = 1.8oC/W
10
1 0
0.01 0.1 1 10 100 25 50 75 100 125 150
tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE ( oC )
Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain
Switching Capability Current vs Case Temperature
200 105
100
V GS = 10V
104
100 µ s
SINGLE PULSE
10
THIS AREA IS 103 RTC JC = 25= 1.8 [o] C [o] C/W
LIMITED BY r DS(on) 1ms
1 STJIN=G MAX RATEDLE PULSE 10ms 102
R JC = 1.8 [o] C/W DC
TC = 25 [o] C
0.1 10
1 10 100 200 10-6 10-5 10-4 10-3 10-2 10-1 1
VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation
CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE(V)
GS
V
DRAIN CURRENT (A)
,
ID
, AVALANCHE CURRENT(A)
IAS
, DRAIN CURRENT (A)
ID
PEAK TRANSIENT POWER (W)
P )( PK,
**----- End of picture text -----**
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation FDD5353 Rev.1.4
**4**
**Typical Characteristics** TJ = 25°C unless otherwise noted
**==> picture [470 x 385] intentionally omitted <==**
**----- Start of picture text -----**
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02 PDM
0.01
0.01 t1
t2
NOTES:
SINGLE PULSE DUTY FACTOR: D = t 1 /t 2
0.001 R JC = 1.8 [o] C/W PEAK TJ = PDM x Z Jc x R Jc + TC
5E-4
10-6 10-5 10-4 10-3 10-2 10-1 1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.1
0.2
0.1
0.05 PDM
0.01 0.02
0.01
t1
t2
SINGLE PULSE
0.001 NOTES:
R JA = 96 [o] C/W DUTY FACTOR: D = t1/t2
( Note 1b ) PEAK TJ = PDM x Z JA x R JA + TA
0.0001
10-4 10-3 10-2 10-1 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Transient Thermal Response Curve
ZJC
IMPEDANCE,
NORMALIZED THERMAL
Z JA
IMPEDANCE,
NORMALIZED THERMAL
**----- End of picture text -----**
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**----- Start of picture text -----**
©2013 Fairchild Semiconductor Corporation
FDD5353 Rev.1.4
**----- End of picture text -----**
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5
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www.fairchildsemi.com
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## ~~—~~
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
## **AUTHORIZED USE**
Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild officer: (1) automotive or other transportation, (2) military/aerospace, (3) any safety critical application – including life critical medical equipment – where the failure of the Fairchild product reasonably would be expected to result in personal injury, death or property damage. Customer’s use of this product is subject to agreement of this Authorized Use policy. In the event of an unauthorized use of Fairchild’s product, Fairchild accepts no liability in the event of product failure. In other respects, this product shall be subject to Fairchild’s Worldwide Terms and Conditions of Sale, unless a separate agreement has been signed by both Parties.
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
## **PRODUCT STATUS DEFINITIONS**
**Definition of Terms**
|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications may change
in anymanner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at anytime without notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at anytime without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.|
Rev. I77
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
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---
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