# Dual MOSFET, Complementary N and P Channel, 80 V, 80 V, 13.9 A, 13.9 A, 0.08 ohm

![Product image](https://novapart.co/image/farnell:2825153RL/)

**URL**: https://novapart.co/products/FDD3510H/dual-mosfet-complementary-n-and-p-channel-80-v-139
**SKU**: FDD3510H
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.5940
**Stock**: 10+

## Description

Transistor Polarity:N and P Channel; Continuous Drain Current Id:13.9A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 5Pins |
| Channel Type | Complementary N and P Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | TO-252 (DPAK) |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 3.1W |
| Power Dissipation P Channel | 3.1W |
| Drain Source Voltage Vds N Channel | 80V |
| Drain Source Voltage Vds P Channel | 80V |
| Continuous Drain Current Id N Channel | 13.9A |
| Continuous Drain Current Id P Channel | 13.9A |
| Drain Source On State Resistance N Channel | 0.08ohm |
| Drain Source On State Resistance P Channel | 0.19ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2825153RL/)

## **FDD3510H** 

## **Dual N & P-Channel PowerTrench[®] MOSFET** 

**N-Channel: 80V, 13.9A, 80m** Ω **P-Channel: -80V, -9.4A, 190m** Ω 

## **Features** 

Q1: N-Channel 

Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A 

## Q2: P-Channel 

Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A 100% UIL Tested 

RoHS Compliant 

## **General Description** 

These  dual N and P- Channel  enhancement mode Power MOSFETs are produced using ON Semiconductor’s advanced PowerTrench **[®]** process that has been especially tailored  to minimize on -state resistance and  yet  maintain superior switching performance. 

## **Applications** 

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Inverter<br>**----- End of picture text -----**<br>


## H-Bridge 

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D1 D2<br>D1/D2<br>G1 G2<br>G2<br>S2<br>G1<br>S1 S1 S2<br>Dual DPAK 4L N-Channel P-Channel<br>**----- End of picture text -----**<br>


## **MOSFET Maximum Ratings** TC = 25°C unless otherwise noted 

|**MOSFET Maximum Ratings  **TC = 25°C unless otherwise notedC = 25°C unless otherwise noted= 25°C unless otherwise noted|TC = 25°C unless otherwise notedC = 25°C unless otherwise noted= 25°C unless otherwise noted|||||||||
|---|---|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|||**Q1**||**Q2**||**Units**||
|VDS<br>Drain to Source Voltage||||80||-80||V||
|VGS<br>Gate to Source Voltage||||±20||±20||V||
|Drain Current - Continuous|TC= 25°C|||13.9||-9.4||||
|ID<br>- Continuous|TA= 25°C|||4.3||-2.8||A||
|- Pulsed||||20||-10||||
|Power Dissipation for Single Operation<br>TC= 25°C     (Note 1)||= 25°C     (Note 1)||35|||32|||
|PD|TA= 25°C   (Note 1a)|= 25°C   (Note 1a)|||3.1|||W||
||TA= 25°C   (Note 1b)|= 25°C   (Note 1b)|||1.3|||||
|EAS<br>Single Pulse Avalanche Energy||(Note 3)||37|||54|mJ||
|TJ, TSTG<br>Operating and Storage Junction Temperature Range||||-55 to +150|-55 to +150|-55 to +150||°C||
|**Thermal Characteristics**||||||||||
|**Package Marking and Ordering Information**<br>RθJC<br>Thermal Resistance, Junction to Case, Single Operation for Q1<br>(Note 1)<br>3.5<br>°C/W<br>RθJC<br>Thermal Resistance, Junction to Case, Single Operation for Q2<br> (Note 1)<br>3.9<br>~~sr~~<br>~~_d~~||||||||||
|**Device Marking**<br>**Device**<br>FDD3510H<br>FDD3510H<br>~~**e**S~~|**Package**<br>**Reel Size**<br>**Tape Width**<br>**Quantity**<br>TO-252-4L<br>13”<br>16mm<br>2500 units<br>~~e~~<br>~~ee ee~~|||||||||
|©2008Semiconductor Components Industries, LLC.|**1**|||||Publication Order Number:||||



©2008 Semiconductor Components Industries, LLC. October-2017,  Rev. 2 

FDD3510H/D 

## **Electrical Characteristics** TJ = 25°C unless otherwise noted 

|**Symbol**|**Parameter**|**Test Conditions**|**Type**|**Min**|**Typ**|**Max**|**Units**|
|---|---|---|---|---|---|---|---|
|**Off Characteristics**||||||||
|BVDSS|Drain to Source Breakdown Voltage|ID=250µA, VGS= 0V<br>ID= -250µA, VGS= 0V|Q1<br>Q2|80<br>-80|||V|
|∆BVDSS<br>∆TJ|Breakdown Voltage Temperature<br>Coefficient|ID= 250µA, referenced to 25°C<br>ID= -250µA, referenced to 25°C|Q1<br>Q2||84<br>-67|mV|/°C|
|IDSS|Zero Gate Voltage Drain Current|VDS= 64V,   VGS= 0V<br>VDS= -64V,  VGS= 0V|Q1<br>Q2|||1<br>-1|µA|
|IGSS|Gate to Source Leakage Current|VGS= ±20V, VDS= 0V|Q1<br>Q2|||±100<br>±100|nA<br>nA|
|**On Characteristics**||||||||
|VGS(th)|Gate to Source Threshold Voltage|VGS= VDS,  ID= 250µA<br>VGS= VDS,  ID= -250µA|Q1<br>Q2|2.0<br>-1.0|2.6<br>-1.6|4.0<br>-3.0|V|
|∆VGS(th)<br>∆TJ|Gate to Source Threshold Voltage<br>Temperature Coefficient|ID= 250µA, referenced to 25°C<br>ID= -250µA, referenced to 25°C|Q1<br>Q2||-6.7<br>4.6|mV/|°C|
|rDS(on)|Static Drain to Source On Resistance|VGS= 10V,  ID= 4.3A<br>VGS= 6.0V,  ID= 4.1A<br>VGS= 10V,  ID= 4.3A, TJ= 125°C|Q1||64<br>70<br>121|80<br>88<br>152|mΩ|
|||VGS= -10V,  ID= -2.8A<br>VGS= -4.5V,  ID= -2.6A<br>VGS= -10V,  ID= -2.8A, TJ= 125°C|Q2||153<br>184<br>259|190<br>224<br>322||
|gFS|Forward Transconductance|VDD= 10V,  ID= 4.3A<br>VDD= -5V,  ID= -2.8A|Q1<br>Q2||15<br>6.8||S|
|**Dynamic Characteristics**||||||||
|Ciss|Input Capacitance|Q1<br>VDS= 40V, VGS= 0V, f = 1MHZ<br>Q2<br>VDS= -40V, VGS= 0V, f = 1MHZ|Q1<br>Q2||600<br>660|800<br>880|pF|
|Coss|Output Capacitance||Q1<br>Q2||56<br>50|75<br>70|pF|
|Crss|Reverse Transfer Capacitance||Q1<br>Q2||27<br>25|41<br>40|pF|
|Rg|Gate Resistance|f = 1MHz|Q1<br>Q2||1.7<br>7.2||Ω|
|**Switching Characteristics**||||||||
|td(on)|Turn-On Delay Time|Q1<br>VDD= 40V, ID= 4.3A,<br>VGS= 10V, RGEN= 6Ω<br>Q2<br>VDD= -40V, ID= -2.8A,<br>VGS= -10V, RGEN= 6Ω|Q1<br>Q2||7<br>6|13<br>11|ns|
|tr|Rise Time||Q1<br>Q2||2<br>3|10<br>10|ns|
|td(off)|Turn-Off Delay Time||Q1<br>Q2||16<br>25|29<br>40|ns|
|tf|Fall Time||Q1<br>Q2||2<br>5|10<br>10|ns|
|Qg(TOT)|Total Gate Charge|Q1<br>VGS= 10V, VDD= 40V, ID= 4.3A<br>Q2<br>VGS= -10V, VDD= -40V, ID= -2.8A|Q1<br>Q2||13<br>14|18<br>20|nC|
|Qgs|Gate to Source  Charge||Q1<br>Q2||2.3<br>1.9||nC|
|Qgd|Gate to Drain “Miller” Charge||Q1<br>Q2||3.2<br>2.9||nC|



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## **Electrical Characteristics** TJ = 25°C unless otherwise noted 

|VSD|Source to Drain Diode  Forward Voltage|VGS= 0V, IS= 2.6A           (Note 2)<br>VGS= 0V, IS= -2.6A<br> (Note 2)|Q1<br>Q2||0.8<br>-0.8|1.2<br>-1.2|V|
|---|---|---|---|---|---|---|---|
|trr|Reverse Recovery Time|Q1<br>IF= 4.3A, di/dt = 100A/s<br>Q2<br>IF= -2.8A, di/dt = 100A/s|Q1<br>Q2||29<br>30|46<br>48|ns|
|Qrr|Reverse Recovery Charge||Q1<br>Q2||28<br>30|45<br>48|nC|



## **Notes:** 

**1.** Rθ **JA** is determined with the device mounted on a 1in[2] pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. Rθ **JC** is guaranteed by design while Rθ **CA** is determined 

by  the user's board design. 

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b. 96°C/W when mounted on  a<br>Q1 a. 40°C/W when mounted on<br>a 1 in [2  ]  pad of  2 oz  copper minimum pad of 2 oz copper<br>jelelelele<br> Scale 1 : 1 on letter size paper<br>ao0000 Y<br>o0000<br>a. 40°C/W when mounted on<br>Q2 a 1 in [2  ]  pad of  2 oz  copper  b. 96°C/W when mounted on  a<br>minimum pad of 2 oz copper<br>ooo0°0<br> Scale 1 : 1 on letter size paper<br>**----- End of picture text -----**<br>


2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 

3. Starting TJ = 25°C, N-ch: L = 3mH, IAS = 5A, VDD = 80V, VGS = 10V;  P-ch: L = 3mH, IAS = -6A, VDD = -80V, VGS = -10V. 

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## **Typical Characteristics (Q1 N-Channel)** TJ = 25°C unless otherwise noted 

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20 4.0<br>VGS =  10V VGS =  6V VGS = 4.5V 3.5 VGS = 3.5V PULSE DURATION = 80DUTY CYCLE = 0.5%MAX µ s<br>15<br>3.0<br>PULSE DURATION = X µ s VGS = 4V<br>DUTY CYCLE = X%MAX 2.5<br>10 VGS = 4.5V<br>2.0<br>VGS = 4V<br>VGS = 6V<br>1.5<br>5<br>VGS = 3.5V 1.0 VGS =  10V<br>0 0.5<br>0 1 2 3 4 0 5 10 15 20<br>VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A)<br>Figure 1.  On Region Characteristics Figure 2.  Normalized On-Resistance<br>vs Drain Current and Gate Voltage<br>2.2 300<br>2.0 IVDGS = 4.3A = 10V ID = 4.3A PULSE DURATION = 80DUTY CYCLE = 0.5%MAX µ s<br>1.8<br>1.6 200<br>1.4<br>1.2 TJ = 125 [o] C<br>1.0 100<br>0.8<br>0.6 TJ = 25 [o] C<br>0.4 0<br>-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10<br>TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3.  Normalized  On  Resistance    Figure 4.   On-Resistance vs  Gate to<br>vs Junction Temperature Source Voltage<br>20 20<br>PULSE DURATION = 80 µ s 10 VGS = 0V<br>DUTY CYCLE = 0.5%MAX<br>15<br>VDS = 5V 1 TJ = 150 [o] C<br>TJ = 25 [o] C<br>10<br>0.1<br>TJ = 150 [o] C<br>TJ = 25 [o] C<br>5 0.01 TJ = -55 [o] C<br>TJ = -55 [o] C<br>0 0.001<br>2 3 4 5 6 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 5.  Transfer Characteristics Figure 6.    Source to Drain  Diode<br>Forward Voltage vs Source Current<br>NORMALIZED<br>DRAIN CURRENT (A)<br>,<br>ID<br>DRAIN TO SOURCE ON-RESISTANCE<br>)<br>Ω<br>m<br>(<br>DRAIN TO<br>NORMALIZED rDS(on),<br>SOURCE ON-RESISTANCE<br> DRAIN TO SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)<br>ID<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


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## **Typical Characteristics (Q1 N-Channel)** TJ = 25°C unless otherwise noted 

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10 1000<br>ID = 4.3A<br>8 Ciss<br>VDD = 40V<br>6<br>VDD = 30V VDD = 50V 100 Coss<br>4<br>2 f = 1MHz<br>VGS = 0V Crss<br>0 10<br>0 2 4 6 8 10 12 14 0.1 1 10 100<br>Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7.  Gate Charge Characteristics Figure 8.  Capacitance vs Drain<br>to Source Voltage<br>5 15<br>4<br>12<br>3 VGS = 10V<br>TJ = 25 [o] C 9<br>VGS = 6V<br>2<br>6<br>TJ = 125 [o] C<br>3<br>R θ JC = 3.5oC/W<br>1 0<br>0.01 0.1 1 10 25 50 75 100 125 150<br>tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE (oC)<br>Figure 9. Unclamped Inductive   Figure 10.  Maximum Continuous Drain<br>Switching Capability Current  vs Case Temperature<br>50 105<br>VGS = 10V<br>10 104<br>100us<br>THIS AREA IS  103 SINGLE PULSE<br>1 LIMITED BY rDS(on) R θ JC = 3.5 [o] C/W<br>SINGLE PULSE 1ms TC = 25 [o] C<br>TJ = MAX RATED 10ms 102<br>R θ JC = 3.5 [o] C/W 100ms<br>0.1 TC = 25 [o] C DC<br>0.05 10<br>0.5 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 1<br>VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)<br>Figure 11.  Forward Bias Safe    Figure 12.   Single  Pulse Maximum<br>Operating Area  Power  Dissipation<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLTAGE(V)<br>GS<br>V<br>DRAIN CURRENT (A)<br>,<br>ID<br>, AVALANCHE CURRENT(A)<br>IAS<br>, DRAIN CURRENT (A)<br>ID<br>PEAK TRANSIENT POWER (W)<br>P)(PK,<br>**----- End of picture text -----**<br>


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Typical Characteristics (Q1 N-Channel)  TJ = 25°C unless otherwise noted<br>2<br>1<br>DUTY CYCLE-DESCENDING ORDER<br>D = 0.5<br>   0.2<br>0.1    0.1   0.05 PDM<br>   0.02<br>   0.01<br>t1<br>0.01 t2<br>NOTES:<br>SINGLE PULSE DUTY FACTOR: D = t1/t2<br>R θ JC = 3.5 [o] C/W PEAK TJ = PDM x Z θJC  x R θJc  + TC<br>0.001<br>10-6 10-5 10-4 10-3 10-2 10-1 1<br>t, RECTANGULAR PULSE DURATION (sec)<br>Figure 13.  Transient Thermal Response Curve<br>2<br>1 DUTY CYCLE-DESCENDING ORDER<br>D = 0.5<br>   0.2<br>   0.1<br>0.1<br>   0.05<br>   0.02 PDM<br>   0.01<br>t1<br>0.01 SINGLE PULSE t2<br>R(Note 1b θ JA = 96) [o] C/W NOTES:DUTY FACTOR: D = tPEAK TJ = PDM x Z θJA 1 x R/t2 θJA  + TA<br>0.001<br>10-4 10-3 10-2 10-1 1 10 100 1000<br>t, RECTANGULAR PULSE DURATION (sec)<br>Figure 14.  Transient Thermal Response Curve<br>ZJC θ<br>IMPEDANCE,<br>NORMALIZED THERMAL<br>Z JA θ<br>IMPEDANCE,<br>NORMALIZED THERMAL<br>**----- End of picture text -----**<br>


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## **Typical Characteristics (Q2 P-Channel)** TJ = 25°C unless otherwise noted 

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10 2.5<br>VGS = -10V VGS =  -4.5V VGS = -2.5V<br>8 VGS = -3.5V 2.0 VGS = -3V<br>6 PULSE DURATION = 80DUTY CYCLE = 0.5%MAX µ s VGS = -3.5V<br>1.5<br>4<br>VGS = -3V VGS = -4.5V<br>1.0<br>2 PULSE DURATION = 80 µ s VGS =  -10V<br>VGS = -2.5V DUTY CYCLE = 0.5%MAX<br>0 0.5<br>0 1 2 3 4 5 0 2 4 6 8 10<br>-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A)<br>Figure 15. On- Region Characteristics Figure 16. Normalized on-Resistance vs Drain<br>Current and Gate  Voltage<br>2.0 600<br>1.8 VIDGS = -2.8A = -10V ID = -2.8A PULSE DURATION = 80DUTY CYCLE = 0.5%MAX µ s<br>500<br>1.6<br>1.4<br>400<br>1.2<br>TJ = 125 [o] C<br>1.0 300<br>0.8<br>200<br>0.6<br>0.4 100 TJ = 25 [o] C<br>-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10<br>TJ, JUNCTION TEMPERATURE ( [o] C) -VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 17. Normalized On-Resistance  Figure 18. On-Resistance vs Gate to<br> vs Junction Temperature Source Voltage<br>10 10<br>PULSE DURATION = 80 µ s VGS = 0V<br>DUTY CYCLE = 0.5%MAX<br>8<br>VDS = -5V 1<br>6 TJ = 150 [o] C<br>0.1 TJ = 25 [o] C<br>4<br>TJ = 150 [o] C<br>0.01<br>2<br>TJ = 25 [o] C TJ = -55 [o] C<br>TJ = -55 [o] C<br>0 0.001<br>1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 19. Transfer Characteristics Figure 20. Source to Drain Diode<br> Forward Voltage vs Source Current<br>NORMALIZED<br>DRAIN CURRENT (A)<br>,<br>D<br>-I<br>DRAIN TO SOURCE ON-RESISTANCE<br>)<br>Ω<br>m<br>(<br>DRAIN TO<br>,<br>NORMALIZED<br>rDS(on)<br>SOURCE ON-RESISTANCE<br> DRAIN TO SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)<br>D<br>-I , REVERSE DRAIN CURRENT (A)<br>S<br>-I<br>**----- End of picture text -----**<br>


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## **Typical Characteristics (Q2 P-Channel)** TJ = 25°C unless otherwise noted 

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10 1000<br>ID = -2.8A<br>8 Ciss<br>VDD = -40V<br>6<br>VDD = -30V VDD = -50V 100 Coss<br>4<br>2 f = 1MHz<br>VGS = 0V Crss<br>0 10<br>0 2 4 6 8 10 12 14 16 0.1 1 10 100<br>Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 21. Gate Charge Characteristics Figure 22. Capacitance vs Drain<br>to Source Voltage<br>4 10<br>3 8<br>VGS = -10V<br>TJ = 25 [o] C 6<br>2 VGS = -4.5V<br>4<br>TJ = 125 [o] C 2<br>R θ JC = 3.9 [o] C/W<br>1 0<br>0.1 1 10 25 50 75 100 125 150<br>tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE ( [o] C)<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLTAGE(V)<br>GS<br>-V<br>DRAIN CURRENT (A)<br>,<br>D<br>-I<br>, AVALANCHE CURRENT(A)<br>IAS-<br>**----- End of picture text -----**<br>


**Figure 23. Unclamped Inductive Switching Capability** 

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20<br>10<br>100us<br>1ms<br>1 THIS AREA IS<br>LIMITED BY rds(on)<br>10ms<br>SINGLE PULSE<br>TJ = MAX RATED 100ms<br>0.1 R θ JC = 3.9 [o] C/W DC<br>TC = 25 [o] C<br>0.05<br>1 10 100 200<br>-VDS, DRAIN to SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


**Figure 25. Forward Bias Safe Operating Area** 

**Figure 24. Maximum   Continuous   Drain Current  vs Case Temperature** 

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20000<br>10000 VGS = -10V<br>FOR TEMPERATURES<br>ABOVE 25 [o] C DERATE PEAK<br>CURRENT AS FOLLOWS:<br>SINGLE PULSE<br>X – T<br>1000 I = I25 R θ JC = 3.9 ------------------- 125 [o] C/W x<br>TX = 25 [o] C<br>100<br>10<br>10-6 10-5 10-4 10-3 10-2 10-1 1<br>t, PULSE WIDTH (s)<br>, PEAK TRANSIENT POWER (W)P)(PK<br>**----- End of picture text -----**<br>


**Figure 26. Single Pulse  Maximum Power Dissipation** 

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Typical Characteristics (Q2 P-Channel) TJ = 25°C unless otherwise noted<br>2<br>1<br>DUTY CYCLE-DESCENDING ORDER<br>D = 0.5<br>      0.2<br>0.1       0.1 PDM<br>      0.05<br>      0.02<br>      0.01 t1<br>0.01 t2<br>NOTES:<br>DUTY FACTOR: D = t1/t2<br>SINGLE PULSE PEAK TJ = PDM x Z θJC  x R θJC  + TC<br>R θ JC = 3.9 [o] C/W<br>0.001<br>10-6 10-5 10-4 10-3 10-2 10-1 1<br>t, RECTANGULAR PULSE DURATION (s)<br>Figure 27. Transient Thermal Response Curve<br>2<br>1 DUTY CYCLE-DESCENDING ORDER<br>D = 0.5<br>   0.2<br>   0.1<br>0.1<br>   0.05<br>   0.02 PDM<br>   0.01<br>t1<br>0.01 SINGLE PULSE t2<br>R θ JA = 96 [o] C/W NOTES:DUTY FACTOR: D = t1/t2<br>(Note 1b) PEAK TJ = PDM x Z θJA  x R θJA  + TA<br>0.001<br>10-4 10-3 10-2 10-1 1 10 100 1000<br>t, RECTANGULAR PULSE DURATION (sec)<br>IMPEDANCE, ZJC θ<br>NORMALIZED THERMAL<br>Z JA θ<br>IMPEDANCE,<br>NORMALIZED THERMAL<br>**----- End of picture text -----**<br>


**Figure 28. Transient Thermal Response Curve** 

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**9** 

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## Links

- [View this product on Novapart](https://novapart.co/products/FDD3510H/dual-mosfet-complementary-n-and-p-channel-80-v-139)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/onsemi/fdd3510h/mosfet-n-p-ch-80v-13-9a-to-252/dp/2825153RL)
---

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