# Power MOSFET, N Channel, 60 V, 40 A, 0.016 ohm, TO-252AA, Surface Mount
**URL**: https://novapart.co/products/FDD24AN06LA0-F085/power-mosfet-n-channel-60-v-40-a-0016-ohm-to-252aa
**SKU**: FDD24AN06LA0-F085
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9310
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | Power Trench FDD |
| Qualification | AEC-Q101 |
| Power Dissipation | 75W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 75W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.016ohm |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 40A |
| Drain Source On State Resistance | 0.016ohm |
| Automotive Qualification Standard | AEC-Q101 |
| Gate Source Threshold Voltage Max | 2V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2992318/)
## **Is Now Part of**
## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com**
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
**==> picture [434 x 609] intentionally omitted <==**
**----- Start of picture text -----**
August 2011
SEMICONDUCTOR®
FDD24AN06LA0_F085
N-Channel Logic Level PowerTrench [®] MOSFET
60V, 36A, 24m Ω
Features Applications
• rDS(ON) = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control
• Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems
• Low Miller Charge • Powertrain Management
• Low QRR Body Diode • Injection Systems
• UIS Capability (Single Pulse and Repetitive Pulse) • DC-DC converters and Off-line UPS
• Qualified to AEC Q101 oS Ne • Distributed Power Architectures and VRMs
• RoHS Compliant • Primary Switch for 12V and 24V systems
Formerly developmental type 83547
DRAIN (FLANGE)
D
GATE
SOURCE G
TO-252AA
S
FDD SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 60 V
VGS Gate to Source Voltage ±20 V
Drain Current
Continuous (TC = 25 [o] C, VGS = 10V) 40 A
ID Continuous Continuous ((TTCC = 25 = 100 [o] C, V [o] C, VGSGS = 5V = 5V) ) 3625 AA
Continuous (TA = 25 [o] C, VGS = 5V, RθJA = 52 [o] C/W) 7.1 A
Pulsed Figure 4 A
EAS Single Pulse Avalanche Energy (Note 1) 32 mJ
Power dissipation 75 W
PD Derate above 25 [o] C 0.5 W/ [o] C
TJ, TSTG Operating and Storage Temperature -55 to 175 oC
Thermal Characteristics
RθJC Thermal Resistance Junction to Case TO-252 2.0 oC/W
RθJA Thermal Resistance Junction to Ambient TO-252 100 oC/W
RθJA Thermal Resistance Junction to Ambient TO-252, 1in [2] copper pad area 52 oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
**----- End of picture text -----**
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation FDD24AN06LA0_F085 Rev. C1
## **Package Marking and Ordering Information**
|**Device Marking**|**Device Marking**|**Device**|**Package**|**Package**|**Reel Size**|**Reel Size**|**Tape Width**|**Tape Width**|**Quantity**|**Quantity**|
|---|---|---|---|---|---|---|---|---|---|---|
|FDD24AN06LA0||FDD24AN06LA0|TO-252AA||330mm||16mm||2500 units||
|**Electrical Characteristics**TC= 25°C unless otherwise noted|||||||||||
|**Symbol**|**Parameter**|||**Test Conditions**|||**Min**|**Typ**|**Max**|**Units**|
|**Off Characteristics**|||||||||||
|BVDSS|Drain to Source Breakdown Voltage|||ID= 250µA, VGS||= 0V|60|-|-|V|
|IDSS|Zero Gate Voltage Drain Current|||VDS= 50V
VGS= 0V|||-|-|1|µA|
|||||||TC= 150oC|-|-|250||
|IGSS|Gate to Source Leakage Current|||VGS=±20V|||-|-|±100|nA|
|**On Characteristics**|||||||||||
|VGS(TH)|Gate to Source Threshold Voltage|||VGS= VDS, ID=||250µA|1|-|2|V|
|rDS(ON)|Drain to Source On Resistance|||ID= 40A, VGS= 10V|||-|0.016|0.019|Ω|
|||||ID= 36A, VGS= 5V|||-|0.020|0.024||
|||||ID= 36A, VGS= 5V,
TJ= 175oC|||-|0.047|0.056||
|**Dynamic Characteristics**|||||||||||
|CISS|Input Capacitance|||VDS= 25V, VGS= 0V,
f = 1MHz|||-|1850|-|pF|
|COSS|Output Capacitance||||||-|180|-|pF|
|CRSS|Reverse Transfer Capacitance||||||-|75|-|pF|
|Qg(TOT)|Total Gate Charge at 5V|||VGS= 0V to 5V||||16|21|nC|
|Qg(TH)|Threshold Gate Charge|||VGS= 0V to 1V|||-|1.8|2.4|nC|
|Qgs|Gate to Source Gate Charge||||||-|6.3|-|nC|
|Qgs2|Gate Charge Threshold to Plateau||||||-|4.5|-|nC|
|Qgd|Gate to Drain “Miller” Charge||||||-|5.0|-|nC|
|**Switching Characteristics**(VGS= 5V)|||||||||||
|tON|Turn-On Time|||VDD= 30V, ID= 36A
VGS= 5V, RGS= 9.1Ω|||-|-|195|ns|
|td(ON)|Turn-On Delay Time||||||-|12|-|ns|
|tr|Rise Time||||||-|118|-|ns|
|td(OFF)|Turn-Off Delay Time||||||-|26|-|ns|
|tf|Fall Time||||||-|41|-|ns|
|tOFF|Turn-Off Time||||||-|-|101|ns|
|**Drain-Source Diode Characteristics**|||||||||||
|VSD|Source to Drain Diode Voltage|||ISD= 36A|||-|-|1.25|V|
|||||ISD= 18A|||-|-|1.0|V|
|trr|Reverse RecoveryTime|||ISD= 36A, dISD/dt = 100A/µs|||-|-|34|ns|
|QRR|Reverse Recovered Charge|||ISD= 36A, dISD/dt = 100A/µs|||-|-|30|nC|
**Notes:**
**1:** Starting TJ = 25°C, L = 80µH, IAS = 28A.
©2011 Fairchild Semiconductor Corporation FDD24AN06LA0_F085 Rev. C1
www.fairchildsemi.com
**Typical Characteristics** TC = 25°C unless otherwise noted
**==> picture [431 x 570] intentionally omitted <==**
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1.2 50
1.0
40
V GS = 10V
0.8
30 V GS = 5V
0.6
20
0.4
0.2 10
0 0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC, CASE TEMPERATURE ( [o] C) TC, CASE TEMPERATURE ( [o] C)
Figure 1. Normalized Power Dissipation vs Figure 2. Maximum Continuous Drain Current vs
Ambient Temperature Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
t 1
t 2
NOTES:
SINGLE PULSE DUTY FACTOR: D = tPEAK T J = P DM x Z θ JC 1/t x R2 θ JC + T C
0.01
10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
400
TC = 25 [o] C
TRANSCONDUCTANCE FOR TEMPERATURES
MAY LIMIT CURRENT ABOVE 25 [o] C DERATE PEAK
IN THIS REGION
CURRENT AS FOLLOWS:
V GS = 10V I = I25 175 - TC
150
100 VGS = 5V
30
10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
, DRAIN CURRENT (A)
ID
POWER DISSIPATION MULTIPLIER
, NORMALIZED
ZJC θ
THERMAL IMPEDANCE
, PEAK CURRENT (A)
IDM
**----- End of picture text -----**
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation FDD24AN06LA0_F085 Rev. C1
**Typical Characteristics** TC = 25°C unless otherwise noted
**==> picture [429 x 588] intentionally omitted <==**
**----- Start of picture text -----**
1000 100
10 µ s
100
100 µ s
STARTING T J = 25 [o] C
1ms
10 10ms 10
OPERATION IN THIS
AREA MAY BE STARTING TJ = 150 [o] C
LIMITED BY rDS(ON)
1 DC t If R = 0 AV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
TSINGLE PULSE J = MAX RATED If R t AV = (L/R)ln[(I ≠ 0 AS *R)/(1.3*RATED BV DSS - V DD ) +1]
T C = 25 [o] C
0.1 1
1 10 100 0.001 0.01 0.1 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (ms)
Figure 5. Forward Bias Safe Operating Area NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
60 60
PULSE DURATION = 80 µ s V GS = 10V V GS = 5V
DUTY CYCLE = 0.5% MAXV DD = 15V V GS = 3.5V
45 45
30 30
V GS = 3V
T J = 175 [o] C
15 TJ = 25 [o] C 15 PULSE DURATION = 80 µ s
DUTY CYCLE = 0.5% MAX
TJ = -55 [o] C
T C = 25 [o] C
0 0
1 2 3 4 0 0.5 1.0 1.5 2.0
VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics
50 2.5
PULSE DURATION = 80 µ s PULSE DURATION = 80 µ s
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
2.0
40
ID = 40A
1.5
30
1.0
20
ID = 5A 0.5
VGS = 10V, ID = 40A
10 0
2 4 6 8 10 -80 -40 0 40 80 120 160 200
VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( [o] C)
Figure 9. Drain to Source On Resistance vs Gate Figure 10. Normalized Drain to Source On
Voltage and Drain Current Resistance vs Junction Temperature
, DRAIN CURRENT (A)
ID , AVALANCHE CURRENT (A)
IAS
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
) Ω
, DRAIN TO SOURCE
ON RESISTANCE (m ON RESISTANCE
rDS(ON)
NORMALIZED DRAIN TO SOURCE
**----- End of picture text -----**
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation FDD24AN06LA0_F085 Rev. C1
**Typical Characteristics** TC = 25°C unless otherwise noted
**==> picture [428 x 358] intentionally omitted <==**
**----- Start of picture text -----**
1.25 1.10
VGS = VDS, ID = 250 µ A ID = 250 µ A
1.00 1.05
0.75 1.00
0.50 0.95
0.25 0.90
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE ( [o] C) TJ, JUNCTION TEMPERATURE ( [o] C)
Figure 11. Normalized Gate Threshold Voltage vs Figure 12. Normalized Drain to Source
Junction Temperature Breakdown Voltage vs Junction Temperature
2500 10
VDD = 30V
CISS = CGS + CGD
1000 8
C OSS ≅ C DS + C GD 6
C RSS = C GD 4
100 WAVEFORMS IN
2 DESCENDING ORDER:
ID = 36A
V GS = 0V, f = 1MHz ID = 5A
40 0
0.1 1 10 60 0 5 10 15 20 25 30
VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC)
NORMALIZED GATE
THRESHOLD VOLTAGE BREAKDOWN VOLTAGE
NORMALIZED DRAIN TO SOURCE
C, CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE (V)
GS
V
**----- End of picture text -----**
**Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature**
**Figure 13. Capacitance vs Drain to Source Figure 14. Gate Charge Waveforms for Constant Voltage Gate Current**
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation FDD24AN06LA0_F085 Rev. C1
**==> picture [469 x 650] intentionally omitted <==**
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Test Circuits and Waveforms
VDS
BVDSS
L tP
VDS
REQUIRED PEAK IVARY tP TO OBTAINAS RG + VDD IAS VDD
VGS -
DUT
tP
0V IAS
0.01 Ω 0
tAV
Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Waveforms
VDS
VDD Qg(TOT)
L VDS
VGS VGS = 5V
VGS +
VDD Qgs2
-
DUT
Ig(REF) VGS = 1V
0
Qg(TH)
Qgs Qgd
Ig(REF)
0
Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveforms
VDS tON tOFF
td(ON) td(OFF)
RL tr tf
VDS
90% 90%
+
VGS
- VDD 0 10% 10%
DUT 90%
RGS
VGS 50% 50%
PULSE WIDTH
VGS 10%
0
Figure 19. Switching Time Test Circuit Figure 20. Switching Time Waveforms
FDD24AN06LA0
_
F085
N-Channel Lo
g
ic Level PowerTrench
MOSFET®
**----- End of picture text -----**
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation FDD24AN06LA0_F085 Rev. C1
## _**Thermal Resistance vs. Mounting Pad Area**_
The maximum rated junction temperature, TJM, and the thermal resistance of the heat dissipating path determines the maximum allowable device power dissipation, PDM, in an application. Therefore the application’s ambient temperature, TA ([o] C), and thermal resistance RθJA ([o] C/W) must be reviewed to ensure that TJM is never exceeded. Equation 1 mathematically represents the relationship and serves as the basis for establishing the rating of the part.
**==> picture [193 x 23] intentionally omitted <==**
In using surface mount devices such as the TO-252 package, the environment in which it is applied will have a significant influence on the part’s current and maximum power dissipation ratings. Precise determination of PDM is complex and influenced by many factors:
1. Mounting pad area onto which the device is attached and whether there is copper on one side or both sides of the board.
**==> picture [211 x 161] intentionally omitted <==**
**----- Start of picture text -----**
125
R θ JA = 33.32+ 23.84/(0.268+Area) EQ.2
R θ JA = 33.32+ 154/(1.73+Area) EQ.3
100
75
50
25
0.01 0.1 1 10
(0.0645) (0.645) (6.45) (64.5)
AREA, TOP COPPER AREA in [2] (cm [2] )
C/W)
o(RJA θ
**----- End of picture text -----**
**Figure 21. Thermal Resistance vs Mounting Pad Area**
2. The number of copper layers and the thickness of the board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part, the board and the environment they are in.
Fairchild provides thermal information to assist the designer’s preliminary application evaluation. Figure 21 defines the RθJA for the device as a function of the top copper (component side) area. This is for a horizontally positioned FR-4 board with 1oz copper after 1000 seconds of steady state power with no air flow. This graph provides the necessary information for calculation of the steady state junction temperature or power dissipation. Pulse applications can be evaluated using the Fairchild device Spice thermal model or manually utilizing the normalized maximum transient thermal impedance curve.
Thermal resistances corresponding to other copper areas can be obtained from Figure 21 or by calculation using Equation 2 or 3. Equation 2 is used for copper area defined in inches square and equation 3 is for area in centimeters square. The area, in square inches or square centimeters is the top copper area including the gate and source pads.
**==> picture [197 x 69] intentionally omitted <==**
Area in Centimeters Squared
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation FDD24AN06LA0_F085 Rev. C1
## **TRADEMARKS**
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.
2Cool™ FlashWriter[® ] * PDP SPM™ The Power Franchise[®] AccuPower™ FPS™ Power-SPM™ The Right Technology for Your Success™ Auto-SPM™ F-PFS™ PowerTrench[®] 0 ® AX-CAP™* FRFET[®] PowerXS™ wer BitSiC[®] Global Power Resource[SM] Programmable Active Droop™ P.Wwe tm Build it Now™ Green FPS™ QFET[®] TinyBoost™ CorePLUS™ Green FPS™ e-Series™ QS™ TinyBuck™ CorePOWER™ G _max_ ™ Quiet Series™ TinyCalc™ _CROSSVOLT_ CTL™ ™ GTO™IntelliMAX™ RapidConfigure™™ TinyLogicTINYOPTO™[®] Current Transfer Logic™ ISOPLANAR™ TinyPower™ DEUXPEED[®] MegaBuck™ Saving our world, 1mW/W/kW at a time™ TinyPWM™ Dual Cool™ MICROCOUPLER™ SignalWise™ TinyWire™TranSiC[®] EcoSPARK[®] MicroFET™ SmartMax™ TriFault Detect™ EfficentMax™ MicroPak™ SMART START™ TRUECURRENT[®] * ESBC™ MicroPak2™ SPM[®] ® MillerDrive™ STEALTH™ μSerDes™ tm MotionMax™ SuperFET[®] Fairchild ~~an~~[®] Motion-SPM™ SuperSOT™-3 WZ4... Fairchild Semiconductor[®] mWSaver™ SuperSOT™-6 UHC[®] FACT Quiet Series™ OptiHiT™ SuperSOT™-8 Ultra FRFET™ FACT[®] OPTOLOGIC[®] SupreMOS[®] UniFET™ FAST[®] OPTOPLANAR[®] SyncFET™ VCX™ FastvCore™ ® Sync-Lock™ VisualMax™ FETBench™ tm ®* XS™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
## **DISCLAIMER**
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
## **LIFE SUPPORT POLICY**
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user.
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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
## **PRODUCT STATUS DEFINITIONS**
## **Definition of Terms**
|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.|
Rev. I55
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- [Supplier page](https://es.farnell.com/en-ES/onsemi/fdd24an06la0-f085/mosfet-aecq101-n-ch-60v-40a-to252aa/dp/2992318)
---
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