# Power MOSFET, N Channel, 150 V, 2.3 A, 0.113 ohm, SOT-23, Surface Mount ![Product image](https://novapart.co/image/farnell:2453847RL/) **URL**: https://novapart.co/products/FDC86244/power-mosfet-n-channel-150-v-23-a-0113-ohm-sot **SKU**: FDC86244 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.2530 **Stock**: 10+ ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.113ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 6Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 1.6W | | Transistor Mounting | Surface Mount | | Transistor Polarity | N Channel | | Power Dissipation Pd | 1.6W | | Rds(On) Test Voltage | 10V | | On Resistance Rds(On) | 0.113ohm | | Transistor Case Style | SOT-23 | | Drain Source Voltage Vds | 150V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 2.3A | | Drain Source On State Resistance | 0.113ohm | | Automotive Qualification Standard | - | | Gate Source Threshold Voltage Max | 2.5V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2453847RL/) ## MOSFET – N-Channel, Shielded Gate, ® POWERTRENCH ## 150 V, 2.3 A, 144 m ## FDC86244 ## **www.onsemi.com** ## **General Description** This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. ## Features - Shielded Gate MOSFET Technology **TSOT23 6−Lead CASE 419BL** - Max rDS(on) = 144 m Q at VGS = 10 V, ID = 2.3 A - Max rDS(on) = 188 m Q at VGS = 6 V, ID = 1.9 A ## **MARKING DIAGRAM** - High Performance Trench Technology for Extremely Low rDS(on) - High Power and Current Handling Capability in a Widely Used Surface Mount Package - Fast Switching Speed - 100% UIL Tested - This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant ## **Applications** **==> picture [103 x 91] intentionally omitted <==** **----- Start of picture text -----**
&E&Y
&.244&
1 Tu
XXX = Specific Device Code
&E = Space Designator
&Y = Year of Production
&. = Pin One Identifier
= Pb−Free Package
**----- End of picture text -----**
- Load Switch - Synchronous Rectifier ## **PINOUT** - Primary Switch **==> picture [150 x 103] intentionally omitted <==** **----- Start of picture text -----**
S 4 3 G
D 5 2 D
D 6 1 D
SuperSOTTM−6
**----- End of picture text -----**
## **ORDERING INFORMATION** See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: **FDC86244/D** **1** © Semiconductor Components Industries, LLC, 2010 **March, 2020 − Rev. 2** **FDC86244** **MOSFET MAXIMUM RATINGS** TA = 25 ° C unless otherwise noted |**MOSFET MAXI**|**MUM RATINGS** TA= 25°C unless otherwise noted||| |---|---|---|---| |**Symbol**|**Parameter**|**Ratings**|**Units**| |VDS|Drain to Source Voltage|150|V| |VGS|Gate to Source Voltage|±20|V| |ID|Drain Current
− Continuous (Note 1a)
− Pulsed|2.3
10|A| |EAS|Single Pulse Avalanche Energy (Note 3)|12|mJ| |PD|Power Dissipation (Note 1a)|1.6|W| ||Power Dissipation (Note 1b)|0.8|| |TJ, TSTG|Operating and Storage Junction Temperature Range|−55 to +150|°C| ## **THERMAL CHARACTERISTICS** |**Symbol**|**Parameter**|**Ratings**|**Units**| |---|---|---|---| |RθJC|Thermal Resistance, Junction to Case|30|°C/W| |RθJA|Thermal Resistance, Junction to Ambient (Note 1a)|78|| ## **PACKAGE MARKING AND ORDERING INFORMATION** |**Device Marking**|**Device**|**Package**|**Reel Size**|**Tape Width**|**Quantity**| |---|---|---|---|---|---| |0.244|FDC86244|SSOT−6|7”|8 mm|3000 Units| **www.onsemi.com** **2** **FDC86244** **ELECTRICAL CHARACTERISTICS** TJ = 25 ° C unless otherwise noted |**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**OFF CHARACTERISTICS**
~~aGG~~| |---| |BVDSS
Drain to Source Breakdown Voltage
ID= 250 A, VGS= 0 V
150
V
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
ID= 250 A, referenced to 25°C
103
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= 120 V, VGS= 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS=±20 V, VDS= 0 V
±100
nA
~~aQO~~
~~AOO~~
~~a~~
~~eeeG~~
~~a~~| |**ON CHARACTERISTICS**| |VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= 250 A
2.0
2.5
4.0
V
VGS(th)
TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= 250 A, referenced to 25°C
−9
mV/°C
~~aa~~| |rDS(on)
Static Drain to Source On Resistance
VGS= 10 V, ID= 2.3 A
113
144
m
VGS= 6 V, ID= 1.9 A
128
188
VGS= 10 V, ID= 2.3 A, TJ= 125°C
214
273
gFS
Forward Transconductance
VDD= 5 V, ID= 2.3 A
6
S
~~es~~
~~ee~~
~~ee~~
~~ee~~
~~ee~~
~~aGQ~~| |**DYNAMIC CHARACTERISTICS**| |Ciss
Input Capacitance
VDS= 75 V, VGS= 0 V,
f = 1 MHz
260
345
pF
Coss
Output Capacitance
32
45
pF
Crss
Reverse Transfer Capacitance
1.7
5
pF
Rg
Gate Resistance
1.3
~~a~~
~~ee~~
~~a~~
~~ee~~
~~a~~
~~ee~~
~~re~~
~~ee~~
~~ee~~
~~ee~~| |**SWITCHING CHARACTERISTICS**| |td(on)
Turn−On Delay Time
VDD= 75 V, ID= 2.3 A, VGS= 10 V, RGEN= 6
4.7
10
ns
tr
Rise Time
1.4
10
ns
td(off)
Turn−Off Delay Time
10
20
ns
tf
Fall Time
3.1
10
ns
Qg(TOT)
Total Gate Charge
VGS= 0 V to 10 V
VDD= 75 V
4.2
6
nC
Total Gate Charge
VGS= 0 V to 5 V
2.4
4
nC
Qgs
Total Gate Charge
ID= 2.3 A
1.0
nC
Qgd
Gate to Drain “Miller” Charge
1.0
nC
**DRAIN−SOURCE DIODE CHARACTERISTICS**
~~rs~~
~~ee~~
oe,
~~|~~
~~|~~
~~|~~
~~es~~
~~ee~~
~~a~~
~~es~~
~~ee~~
~~a~~
~~ee~~
~~ee~~
~~a~~
~~SS~~
~~ee~~
~~ee~~
~~ee~~
~~ee~~
~~ee~~
~~ee ee~~
~~es~~
~~ee~~
~~ee~~| |VSD
Source to Drain Diode Forward Voltage
VGS= 0 V, IS= 2.3 A (Note 2)
0.8
1.3
V
trr
Reverse Recovery Time
IF= 2.3 A, di/dt = 100 A/ s
45
73
ns
Qrr
Reverse Recovery Charge
33
53
nC
1. RθJAis the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
~~a QO~~
~~ee~~
~~ee~~
~~ee~~
~~ee~~
~~ee~~| |mounting surface of the drain pins. RθJCis guaranteed by design while RθCAis determined by the user’s board design.| |a. 78°C/W when mounted on
a 1 in2pad of 2 oz copper
b. 175°C/W when mounted on
a minimum pad of 2 oz copper
**G**
**DF**
**DS**
**SF**
**SS**
**G**
**DF**
**DS**
**SF**
**SS**
S
fH
00000| 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0 %. m 3. Starting TJ = 25 ° C, L = 1.0 mH, IAS = 5.0 A, VDD = 135 V, VGS = 10 V. **www.onsemi.com** **3** **FDC86244** **TYPICAL CHARACTERISTICS** TJ = 25 ° C Unless Otherwise Noted **==> picture [211 x 536] intentionally omitted <==** **----- Start of picture text -----**
10
VGS = 10 V
VGS = 6 V
8
VGS = 5 V
6
PULSE DURATION = 80 � s
DUTY CYCLE = 0.5% MAX
4 VGS = 4.5 V
2
VGS = 4 V
0
0 1 2 3 4 5
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
2.2
2.0 ID = 2.3 A
VGS = 10 V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
−75 −50 −25 0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE o C( )
Figure 3. Normalized On− Resistance
vs Junction Temperature
10
PULSE DURATION = 80 � s
DUTY CYCLE = 0.5% MAX
8
VDS = 5 V
6
TJ = 150 [o] C
4
TJ = 25 [o] C
2
TJ = −55 [o] C
0
1 2 3 4 5 6
VGS, GATE TO SOURCE VOLTAGE (V)
, DRAIN CURRENT (A)
ID
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**Figure 5. Transfer Characteristics** **==> picture [214 x 536] intentionally omitted <==** **----- Start of picture text -----**
5
VGS = 4 V
VGS = 4.5 V
4
VGS = 5 V
3
2
VGS = 6 V
1
PULSE DURATION = 80 � s VGS = 10 V
DUTY CYCLE = 0.5% MAX
0
0 2 4 6 8 10
ID , DRAIN CURRENT (A)
Figure 2. Normalized On−Resistance
vs Drain Current and Gate Voltage
500
PULSE DURATION = 80 � s
DUTY CYCLE = 0.5% MAX
400
ID = 2.3 A
300
TJ = 125 [o] C
200
TJ = 25 [o] C
100
0
2 4 6 8 10
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On−Resistance vs Gate to
Source Voltage
10
VGS = 0 V
1
TJ = 150 [o] C
T J = 25 [ o] C
0.1
0.01 TJ = −55 [o] C
0.001
0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
)
�
m
(
DRAIN TO
rDS(on),
SOURCE ON−RESISTANCE
, REVERSE DRAIN CURRENT (A)
IS
**----- End of picture text -----**
**Figure 6. Source to Drain Diode Forward Voltage vs Source Current** **www.onsemi.com** **4** **FDC86244** **TYPICAL CHARACTERISTICS** TJ = 25 ° C Unless Otherwise Noted (continued) **==> picture [202 x 149] intentionally omitted <==** **----- Start of picture text -----**
10
ID = 2.3 A VDD = 50 V
8
VDD = 75 V
6
VDD = 100 V
4
2
0
0 1 2 3 4 5
Qg, GATE CHARGE (nC)
, GATE TO SOURCE VOLTAGE (V)
GS
V
**----- End of picture text -----**
**Figure 7. Gate Charge Characteristics** **==> picture [200 x 351] intentionally omitted <==** **----- Start of picture text -----**
7
6
5
TJ = 25 [ o] C
4
TJ = 100 [ o] C
3
TJ = 125 [o] C
2
1
0.01 0.1 1 2
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
20
10
100 us
1
1 ms
THIS AREA IS 10 ms
0.1 LIMITED BY r
DS(on)
100 ms
SINGLE PULSE
1 s
0.01 T J = MAX RATED 10 s
R � JA = 175 [ o] C/W DC
TA = 25 [o] C
0.001
0.1 1 10 100 500
VDS, DRAIN to SOURCE VOLTAGE (V)
, AVALANCHE CURRENT (A)
IAS
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**Figure 11. Forward Bias Safe Operating Area** **==> picture [204 x 147] intentionally omitted <==** **----- Start of picture text -----**
400
C iss
100
C oss
10
f = 1 MHz
V GS = 0 V Crss
1
0.1 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
**----- End of picture text -----**
**Figure 8. Capacitance vs Drain to Source Voltage** **==> picture [199 x 150] intentionally omitted <==** **----- Start of picture text -----**
2.5
2.0
VGS = 10 V
1.5
VGS = 6 V
1.0
0.5
R � JA = 78 [o] C/W
0.0
25 50 75 100 125 150
TA , AMBIENT TEMPERATURE o (C)
DRAIN CURRENT (A)
I,D
**----- End of picture text -----**
**Figure 10. Maximum Continuous Drain Current vs Ambient Temperature** **==> picture [208 x 150] intentionally omitted <==** **----- Start of picture text -----**
1000
SINGLE PULSE
R � JA = 175 [o] C/W
TA = 25 [o] C
100
10
1
0.510−4 10−3 10−2 10−1 1 10 100 1000
t, PULSE WIDTH (sec)
PEAK TRANSIENT POWER (W)
P )( PK,
**----- End of picture text -----**
**Figure 12. Single Pulse Maximum Power Dissipation** **www.onsemi.com** **5** **FDC86244** **TYPICAL CHARACTERISTICS** TJ = 25 ° C unless otherwise noted (continued) **==> picture [445 x 161] intentionally omitted <==** **----- Start of picture text -----**
2
DUTY CYCLE−DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1 0.02 PDM
0.01
t1
0.01 t2
NOTES:
SINGLE PULSE DUTY FACTOR: D = t 1/t2
R � JA = 175 [o] C/W PEAK TJ = PDM x Z � JA x R � JA + TA
0.00110−4 10−3 10−2 10−1 11 0 100 1000
t, RECTANGULAR PULSE DURATION (sec)
ZJA �
IMPEDANCE,
NORMALIZED THERMAL
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**Figure 13. Junction−to−Ambient Transient Thermal Response Curve** **www.onsemi.com** **6** ## MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** ## **TSOT23 6−Lead** CASE 419BL ISSUE A **==> picture [5 x 7] intentionally omitted <==** **----- Start of picture text -----**
1
**----- End of picture text -----**
## DATE 31 AUG 2020 **==> picture [42 x 7] intentionally omitted <==** **----- Start of picture text -----**
SCALE 2:1
**----- End of picture text -----**
## **DOCUMENT NUMBER: 98AON83292G** ## **TSOT23 6−Lead** ## **DESCRIPTION:** **==> picture [257 x 193] intentionally omitted <==** **----- Start of picture text -----**
GENERIC
LAND PATTERN MARKING DIAGRAM*
RECOMMENDATION r ] ]
*FOR ADDITIONAL INFORMATION ON OUR
PB - FREE STRATEGY AND SOLDERING DETAILS, XXX M
PLEASE DOWNLOAD THE ON SEMICONDUCTOR
SOLDERING AND MOUNTING TECHNIQUES
REFERENCE MANUAL, SOLDERRMID. 1 | | | | i
XXX = Specific Device Code
M = Date Code
: = Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ ”, a
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
**----- End of picture text -----**
## **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2018 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. 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