# Power MOSFET, P Channel, 20 V, 4 A, 0.045 ohm, SOT-23, Surface Mount ![Product image](https://novapart.co/image/farnell:2453845RL/) **URL**: https://novapart.co/products/FDC642P/power-mosfet-p-channel-20-v-4-a-0045-ohm-sot-23 **SKU**: FDC642P **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.1590 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600 ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 6Pins | | Channel Type | P Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 1.6W | | Transistor Mounting | Surface Mount | | Transistor Polarity | P Channel | | Power Dissipation Pd | 1.6W | | Rds(On) Test Voltage | 4.5V | | On Resistance Rds(On) | 0.045ohm | | Transistor Case Style | SOT-23 | | Drain Source Voltage Vds | 20V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 4A | | Drain Source On State Resistance | 0.045ohm | | Automotive Qualification Standard | - | | Gate Source Threshold Voltage Max | 600mV | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2453845RL/) ## **ON Semiconductor** ## **Is Now** **==> picture [390 x 69] intentionally omitted <==** **To learn more about onsemi™, please visit our website at www.onsemi.com** **onsemi** and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. ## **FDC642P Single P-Channel 2.5V Specified PowerTrench[®] MOSFET -20 V, -4.0 A, 65 m** Ω ## **Features** Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A Fast switching speed Low gate charge (11nC typical) High performance trench technology for extremely low rDS(on) SuperSOT[TM] -6 package: small footprint (72% smaller than standard SO-8); low profile (1 mm thick) Termination is Lead-free and RoHS Compliant ## **General Description** This P-Channel 2.5V specified MOSFET is produced using ON Semicondcutor’s advanced PowerTrench **[®]** process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical. ## **Applications** Load switch Battery protection Power management **==> picture [175 x 78] intentionally omitted <==** **----- Start of picture text -----**
D D
D D
af (fen)
G S
**----- End of picture text -----**
**MOSFET Maximum Ratings** TC = 25°C unless otherwise noted |**Symbol**
**Parameter**||||**Ratings**||**Units**| |---|---|---|---|---|---|---| |VDS
Drain to Source Voltage||||-20||V| |VGS
Gate to Source Voltage||||±8||V| |ID
-Continuous
TA= 25°C
-Pulsed||= 25°C(Note 1a)||-4.0
-20||A| |PD
Power Dissipation
Power Dissipation|
|(Note 1a)
(Note 1b)||1.6
0.8||W| |TJ, TSTG
Operatingand Storage Junction Temperature Range||||-55 to + 150||°C| |**Thermal Characteristics**||||||| |**Package Marking and Ordering Information**
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
78
°C/W
**Device Marking**
**Device**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
.642
FDC642P
SSOT-6TM
7 ’’
8 mm
3000 units
~~aee~~||||||| > ©2010 Semiconductor Components Industries, LLC. **1** October-2017, Rev. 3 Publication Order Number: FDC642P/D ## **Electrical Characteristics** TJ = 25°C unless otherwise noted |**Electrica**|**l Characteristics**TJ= 25°C unles|s otherwise noted||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Units**| |**Off Characteristics**||||||| |BVDSS|Drain to Source Breakdown Voltage|ID= -250 µA, VGS= 0 V|-20|||V| |∆BVDSS
∆TJ|Breakdown Voltage Temperature
Coefficient|ID= -250 µA, referenced to 25°C||-13||mV/°C| |IDSS|Zero Gate Voltage Drain Current|VDS= -16 V, VGS = 0 V|||-1|µA| |IGSS|Gate to Source Leakage Current|VGS= ±8 V, VDS = 0 V|||±10|µA| |**On Characteristics**||||||| |VGS(th)|Gate to Source Threshold Voltage|VGS= VDS, ID= -250 µA|-0.4|-0.6|-1.5|V| |∆VGS(th)
∆TJ|Gate to Source Threshold Voltage
Temperature Coefficient|ID= -250 µA, referenced to 25°C||2.5||mV/°C| |rDS(on)|Static Drain to Source On Resistance|VGS= -4.5 V, ID= -4.0 A||45|65|mΩ| |||VGS= -2.5 V, ID= -3.2 A||55|100|| |||VGS= -4.5 V, ID= -4.0 A,
TJ = 125°C||62|90|| |gFS|Forward Transconductance|VDS= -5 V, ID= -4.0 A||15||S| |**Dynamic Characteristics**||||||| |Ciss|Input Capacitance|VDS= -10 V, VGS= 0 V,
f = 1 MHz||700|925|pF| |Coss|Output Capacitance|||110|150|pF| |Crss|Reverse Transfer Capacitance|||95|145|pF| |**Switching Characteristics**||||||| |td(on)|Turn-On DelayTime|VDD= -10 V, ID= -1 A,
VGS= -4.5 V, RGEN= 6 Ω||6|12|ns| |tr|Rise Time|||7|14|ns| |td(off)|Turn-Off DelayTime|||120|190|ns| |tf|Fall Time|||52|83|ns| |Qg|Total Gate Charge|VDD= -10 V, ID= -4 A
VGS= --4.5 V||11|16|nC| |Qgs|Gate to Source Charge|||1.1||nC| |Qgd|Gate to Drain “Miller” Charge|||3.0||nC| |**Drain-Source Diode Characteristics**||||||| |IS|Maximum Continuous Drain-Source Diode|Forward Current|||-1.3|A| |VSD|Source-Drain Diode Forward Voltage|VGS = 0 V, IS = -1.3 A(Note 2)||-0.7|-1.2|V| **Notes:** - 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. a. 78 °C/W when mounted on a 1 in[2] pad of 2 oz copper. - b. 156°C/W when mounted on a minimum pad of 2 oz copper. - 2: Pulse Test: Pulse Width<300 us, Duty Cycle<2.0%. **www.onsemi.com** **2** ## **Typical Characteristics** TJ = 25°C unless otherwise noted **==> picture [471 x 588] intentionally omitted <==** **----- Start of picture text -----**
20 5
VGS = -4.5 V PULSE DURATION = 80 µ s
VGS = -3.5 V DUTY CYCLE = 0.5% MAX
16 4
VGS = -3.0 V VGS = -2.0 V VGS = -1.5 V
12 VGS = -2.5 V 3
VGS = -2.0 V
8 2
VGS = -2.5 V
VGS = -1.5 V
4 1
PULSE DURATION = 80 DUTY CYCLE = 0.5% MAX µ s VGS = -3.0 V VGS = -3.5 V VGS = -4.5 V
0 0
0 1 2 3 4 5 0 4 8 12 16 20
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6 180
ID = -4.0 A PULSE DURATION = 80 µ s
VGS = -4.5 V DUTY CYCLE = 0.5% MAX
1.4 150
ID = -4.0 A
1.2 120
1.0 90 TJ = 125 [o] C
0.8 60
TJ = 25 [o] C
0.6 30
-75 -50 -25 0 25 50 75 100 125 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
TJ, JUNCTION TEMPERATURE ( [o] C) -VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance Figure 4. On-Resistance vs Gate to
vs Junction Temperature Source Voltage
20 10
PULSE DURATION = 80 µ s VGS = 0 V
DUTY CYCLE = 0.5% MAX
16
VDS = -5 V
1 TJ = 150 [o] C
12
8 TJ = 25 [ o] C
0.1
4 TJ = 150 [o] C TJ = 25 [o] C
TJ = -55 [o] C
TJ = -55 [o] C
0 0.01
0.5 1.0 1.5 2.0 2.5 3.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)
NORMALIZED
DRAIN CURRENT (A)
,
D
-I
DRAIN TO SOURCE ON-RESISTANCE
)
Ω
m
(
DRAIN TO
NORMALIZED rDS(on),
SOURCE ON-RESISTANCE
DRAIN TO SOURCE ON-RESISTANCE
, DRAIN CURRENT (A)
D
-I , REVERSE DRAIN CURRENT (A)
S
-I
**----- End of picture text -----**
**Figure 5. Transfer Characteristics** **Figure 6. Source to Drain Diode Forward Voltage vs Source Current** **www.onsemi.com** **3** **Typical Characteristics** TJ = 25°C unless otherwise noted **==> picture [471 x 601] intentionally omitted <==** **----- Start of picture text -----**
4.5 2000
4.0 ID = -4.0 A 1000 Ciss
3.5
3.0
2.5 VDD = -5 V Coss
VDD = -10 V
2.0 100
VDD = -15 V
1.5
Crss
1.0
f = 1 MHz
0.5 VGS = 0 V
0.0 10
0 3 6 9 12 0.1 1 10 20
Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain
to Source Voltage
50 1000
VGS = -4.5 V
10
100 µ s
100
1 ms
1
10 ms
THIS AREA IS
LIMITED BY rDS(on) 100 ms 10
0.1 SINGLE PULSE 1 s
TJ = MAX RATED 10 s SINGLE PULSE
R θ JA = 156 [o] C/W DC R θ JA = 156 [o] C/W
TA = 25 [o] C 1 TA = 25 [o] C
0.01 0.5
0.1 1 10 60 10-4 10-3 10-2 10-1 1 10 100 1000
-VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)
Figure 9. Forward Bias Safe Figure 10. Single Pulse Maximum
Operating Area Power Dissipation
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1
0.02
0.01 PDM
t1
0.01
t2
NOTES:
SINGLE PULSE DUTY FACTOR: D = t1/t2
R θ JA = 156 [o] C/W PEAK TJ = PDM x Z θJA x R θJA + TA
0.001
10-4 10-3 10-2 10-1 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 11. Junction-to-Ambient Transient Thermal Response Curve
CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE (V)
GS
-V
, DRAIN CURRENT (A)
D
-I PEAK TRANSIENT POWER (W)
P)(PK,
Z JA θ
IMPEDANCE,
NORMALIZED THERMAL
**----- End of picture text -----**
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