# Power MOSFET, P Channel, 20 V, 4 A, 0.0525 ohm, SuperSOT, Surface Mount

![Product image](https://novapart.co/image/farnell:3368729/)

**URL**: https://novapart.co/products/FDC642P-F085/power-mosfet-p-channel-20-v-4-a-00525-ohm-supersot
**SKU**: FDC642P-F085
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3380
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Product Range | PowerTrench |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.2W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | P Channel |
| Power Dissipation Pd | 1.2W |
| Rds(On) Test Voltage | 4.5V |
| On Resistance Rds(On) | 0.0525ohm |
| Transistor Case Style | SuperSOT |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4A |
| Drain Source On State Resistance | 0.0525ohm |
| Automotive Qualification Standard | AEC-Q101 |
| Gate Source Threshold Voltage Max | 700mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3368729/)

## **FDC642P-F085** 

**P-Channel PowerTrench[®] MOSFET -20V, -4A, 100m** Ω 

## **Features** 

- Typ RDS(on) = 52.5m at VGS = -4.5V, ID = -4A 

- Typ RDS(on) = 75.3m at VGS = -2.5V, ID = -3.2A 

- Fast switching speed 

- Low gate charge(6.9nC typical) 

- High performance trench technology for extremely low RDS(on) 

- SuperSOT[TM] -6 package:small footprint(72% smaller than standard SO8);low profile(1mm thick). 

- RoHS Compliant 

- Qualified to AEC Q101 

## **Applications** 

- Load switch 

- Battery protection 

- Power management 

## **MOSFET Maximum Ratings** TA = 25°C unless otherwise noted 

|**MOSFET Maximum RatingsOSFET Maximum RatingsFET Maximum Ratings**|**MOSFET Maximum RatingsOSFET Maximum RatingsFET Maximum Ratingsaximum Ratingsximum Ratingsum Ratingsm Ratingsatingsingsgs  **TA = 25°C unless otherwise notedA = 25°C unless otherwise noted= 25°C unless otherwise noted|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Ratings**|**Units**|
|VDSS|Drain to Source Voltage|-20|V|
|VGS|Gate to Source Voltage|±8|V|
|ID|Drain Current Continuous(VGS = 4.5V)|-4|A|
||Pulsed|-20||
|EAS|Single Pulse Avalanche Energy<br>(Note 1)|72|mJ|
|PD|Power Dissipation|1.2|W|
|TJ, TSTG|Operatingand Storage Temperature|-55 to +150|oC|
|RJC|Thermal Resistance Junction to Case|30|oC/W|
|RJA|Thermal Resistance Junction to Ambient, 1in2copperpad area|103|oC/W|



## **Package Marking and Ordering Information** 

|**Device Marking**|**Device**|**Package**|**Reel Size**|**Tape Width**|**Quantity**|
|---|---|---|---|---|---|
|FDC642P|FDC642P-F085|SSOT-6|7”|8mm|3000 units|



**Notes:** 

- 1: Starting TJ = 25°C, L = 14.1mH, IAS = -3.2A 

- 2: A suffix as “…F085P” has been temporarily introduced in order to manage a double source strategy as ON Semiconductor has officially announced in Aug 2014. 

©2016 Semiconductor Components Industries, LLC. September-2017, Rev. 2 

Publication Order Number: FDC642P-F085/D 

**1** 

**Electrical Characteristics** TA = 25°C unless otherwise noted 

|**Symbol**|**Parameter**|**Test Conditions**|**Test Conditions**|**Min**|**Typ**|**Max**|**Units**|
|---|---|---|---|---|---|---|---|
|**Off Characteristics**||||||||
|BVDSS|Drain to Source Breakdown Voltage|ID= -250A, VGS= 0V||-20|-|-|V|
|IDSS|Zero Gate Voltage Drain Current|VDS= -16V,<br>VGS= 0V||-|-|-1|A|
||||TA= 150oC|-|-|-250||
|IGSS|Gate to Source Leakage Current|VGS= ±8V||-|-|±100|nA|
|**On Characteristics**||||||||
|VGS(th)|Gate to Source Threshold Voltage|VGS= VDS, ID= -250A||-0.4|-0.7|-1.5|V|
|rDS(on)|Drain to Source On Resistance|ID= -4A, VGS= -4.5V||-|52.5|65|m|
|||ID= -3.2A, VGS= -2.5V||-|75.3|100||
|||ID= -4A, VGS= -4.5V<br>TJ = 125oC||-|72.7|105||
|gFS|Forward Transconductance|ID= -4A, VDD= -5V||-|10|-|S|
|**Dynamic Characteristics**||||||||
|Ciss|Input Capacitance|VDS= -10V, VGS= 0V,<br>f = 1MHz||-|630|-|pF|
|Coss|Output Capacitance|||-|160|-|pF|
|Crss|Reverse Transfer Capacitance|||-|65|-|pF|
|RG|Gate Resistance|f = 1MHz||-|4.4|-||
|Qg(TOT)|Total Gate Charge at -4.5V|VGS= 0 to -4.5V||-|6.9|9.0|nC|
|Qgs|Gate to Source Gate Charge|||-|1.2|-|nC|
|Qgd|Gate to Drain “Miller“ Charge|||-|1.8|-|nC|



|**Switching Characteristics**|**Switching Characteristics**||||||
|---|---|---|---|---|---|---|
|ton|Turn-On Time|VDD= -10V, ID= -1A<br>VGS= -4.5V, RGS= 6|-|-|23|ns|
|td(on)|Turn-On DelayTime||-|7.3|-|ns|
|tr|Rise Time||-|5.5|-|ns|
|td(off)|Turn-Off DelayTime||-|23.2|-|ns|
|tf|Fall Time||-|9.6|-|ns|
|toff|Turn-Off Time||-|-|53|ns|
|**Drain-Source Diode Characteristics**|||||||
|VSD|Source to Drain Diode Voltage|ISD= -1.3A|-|-|-1.25|V|
|||ISD= -0.65A|-|-|-1.0||
|trr|Reverse RecoveryTime|ISD= -1.3A, dISD/dt = 100A/s|-|17|22|ns|
|Qrr|Reverse RecoveryCharge||-|5.6|7.3|nC|



**www.onsemi.com** 

**2** 

## **Typical Characteristics** 

**==> picture [426 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.2<br>1.0 < Mf ff<br>-= 3 = ~~, |<br>0.8<br>oa<br>0.6 eo | TS=] N<br>az = 4.<br>0.4 = V_. = -2.5V SA<br>5 “ aN<br>0.2 31| aN<br>0.0<br>0 ™ “y= LN<br>0 25 50 75 100 125 150 25 50 75 100 425 150<br>TA, AMBIENT TEMPERATURE( [o] C) Ts, CASE TEMPERATURE (°C)<br>Figure 1.  Normalized Power Dissipation vs  Figure 2.  Maximum Continuous Drain Current vs<br>Ambient Temperature        Ambient Temperature<br>POWER DISSIPATION MULTIPLIER<br>**----- End of picture text -----**<br>


**Figure 3.  Normalized Maximum Transient Thermal Impedance** 

**Figure 4.  Peak Current Capability** 

**www.onsemi.com 3** 

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Typical Characteristics<br>**----- End of picture text -----**<br>


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NOTE: Refer to ON Semiconductor Application Notes AN7514<br>Figure 5.  Forward Bias Safe Operating Area and AN7515<br>Figure 6.  Unclamped Inductive Switching<br>Capability<br>**----- End of picture text -----**<br>


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Figure 7.  Transfer Characteristics Figure 8.  Saturation Characteristics<br>**----- End of picture text -----**<br>


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Figure 9.  Drain to Source On-Resistance  Figure 10.  Normalized Drain to Source On<br>Variation vs Gate to Source Voltage Resistance vs Junction Temperature<br>**----- End of picture text -----**<br>


**www.onsemi.com** 

**4** 

## **Typical Characteristics** 

**==> picture [424 x 21] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 11.  Normalized Gate Threshold Voltage vs  Figure 12.  Normalized Drain to Source<br>Junction Temperature Breakdown Voltage vs Junction Temperature<br>**----- End of picture text -----**<br>


**Figure 13.  Capacitance vs Drain to Source Figure 14.  Gate Charge vs Gate to Source Voltage Voltage** 

**www.onsemi.com** 

**5** 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

## **LITERATURE FULFILLMENT** : 

Literature Distribution Center for ON Semiconductor 

**N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada 

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative 

❖ © Semiconductor Components Industries, LLC 

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