# Power MOSFET, P Channel, 20 V, 4.5 A, 0.043 ohm, SuperSOT, Surface Mount ![Product image](https://novapart.co/image/farnell:1495226/) **URL**: https://novapart.co/products/FDC638APZ/power-mosfet-p-channel-20-v-45-a-0043-ohm-supersot **SKU**: FDC638APZ **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.2070 **Stock**: 1000+ **Lead Time**: 99 days (indicative) ## Description Transistor Polarity:P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:12V; Threshold Voltage Vgs:-800mV; Power Di ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 6Pins | | Channel Type | P Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 1.6W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 12V | | Transistor Case Style | SuperSOT | | Drain Source Voltage Vds | 20V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 4.5A | | Drain Source On State Resistance | 0.043ohm | | Gate Source Threshold Voltage Max | 800mV | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1495226/) ## **ON Semiconductor** ## **Is Now** **==> picture [390 x 69] intentionally omitted <==** **To learn more about onsemi™, please visit our website at www.onsemi.com** **onsemi** and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. ## **FDC638APZ** ## **P-Channel 2.5V PowerTrench[®] Specified MOSFET** ## **–20V, –4.5A, 43m** Ω ## **Features** Max rDS(on) = 43mΩ at VGS = –4.5V, ID = –4.5A Max rDS(on) = 68mΩ at VGS = –2.5V, ID = –3.8A Low gate charge (8nC typical). High performance trench technology for extremely low rDS(on). SuperSOT[TM] –6 package:small footprint (72% smaller than standard SO–8) low profile (1mm thick). RoHS Compliant ## **General Description** This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor’s advanced PowerTrench **[®]** process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well suited for battery power applications:load switching and power management,battery charging circuits,and DC/DC conversion. ## **Application** DC - DC Conversion |**Pin 1**
**D**
**S**
**D**
**D**
**D**|**G**|**D**
**D**
**G**||**3**
**1**
**2**
**3**|||||||**5**
**6**
**4**|**D**
**D**
**S**|**D**
**D**
**S**|| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |**SuperSOTTM -6**||||||||||||||| |**MOSFET Maximum Ratings **TA= 25°C unless otherwise noted|= 25°C unless otherwise noted|||||||||||||| |**Symbol**|**Parameter**||||||**Ratings**|||||||**Units**| |VDS
Drain to Source Voltage|||||||–20|||||||V| |VGS
Gate to Source Voltage|||||||±12|||||||V| |ID
Drain Current -Continuous
-Pulsed||(Note 1a|Note 1a)||||–4.5
–20|||||||A| |PD
Power Dissipation
Power Dissipation||(Note 1a
(Note 1b|Note 1a)
Note 1b)||||1.6
0.8|||||||W| |TJ, TSTG
Operatingand Storage Junction Temperature Range||||||–55 to +150|||–55 to +150|||||°C| **MOSFET Maximum Ratings** TA= 25°C unless otherwise noted **Thermal Characteristics** RθJA Thermal Resistance, Junction to Ambient (Note 1a) 78 °C/W ~~rd~~ RθJA Thermal Resistance, Junction to Ambient (Note 1b) 156 **Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity** .638Z FDC638APZ 7’’ 8mm 3000 units ~~eeee~~ ©2006 Semiconductor Components Industries, LLC. **1** October-2017, Rev.2 Publication Order Number: FDC638APZ/D ## **Electrical Characteristics** TJ = 25°C unless otherwise noted |**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= –250µA, VGS= 0V
–20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID= –250µA, referenced to 25°C
–9.4
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= –16V,
–1
µA
VGS= 0V
TJ= 55°C
–10
IGSS
Gate to Source Leakage Current
VGS= ±12V, VDS= 0V
±10
µA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= –250µA
–0.4
–0.8
–1.5
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= –250µA, referenced to 25°C
2.9
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= –4.5V, ID= –4.5A
37
43
mΩ
VGS= –2.5V, ID= –3.8A
52
68
VGS= –4.5V, ID= –4.5A, TJ= 125°C
50
72
ID(on)
On-State Drain Current
VGS= –10V, VDS= –4.5A
–20
A
gFS
Forward Transconductance
VDS= –10V, ID= –4.5A
18
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= –10V, VGS= 0V,
f = 1MHz
750
1000
pF
Coss
Output Capacitance
155
210
pF
Crss
Reverse Transfer Capacitance
130
195
pF
**Switching Characteristics**
td(on)
Turn-On DelayTime
VDD= –5V, ID= –4.5A
VGS= –4.5V, RGEN= 6Ω
6
12
ns
tr
Rise Time
20 31ns
td(off)
Turn-Off DelayTime
48
77
ns
(Note 2)
~~——~~
~~ee~~
~~aA~~
~~27~~
~~—————~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= –250µA, VGS= 0V
–20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID= –250µA, referenced to 25°C
–9.4
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= –16V,
–1
µA
VGS= 0V
TJ= 55°C
–10
IGSS
Gate to Source Leakage Current
VGS= ±12V, VDS= 0V
±10
µA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= –250µA
–0.4
–0.8
–1.5
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= –250µA, referenced to 25°C
2.9
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= –4.5V, ID= –4.5A
37
43
mΩ
VGS= –2.5V, ID= –3.8A
52
68
VGS= –4.5V, ID= –4.5A, TJ= 125°C
50
72
ID(on)
On-State Drain Current
VGS= –10V, VDS= –4.5A
–20
A
gFS
Forward Transconductance
VDS= –10V, ID= –4.5A
18
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= –10V, VGS= 0V,
f = 1MHz
750
1000
pF
Coss
Output Capacitance
155
210
pF
Crss
Reverse Transfer Capacitance
130
195
pF
**Switching Characteristics**
td(on)
Turn-On DelayTime
VDD= –5V, ID= –4.5A
VGS= –4.5V, RGEN= 6Ω
6
12
ns
tr
Rise Time
20 31ns
td(off)
Turn-Off DelayTime
48
77
ns
(Note 2)
~~——~~
~~ee~~
~~aA~~
~~27~~
~~—————~~| |---|---| |tf
Fall Time
47
72
ns|| |Qg(TOT)
Total Gate Charge
VGS= 0V to –4.5V
VDD= –5V
8
12
nC|| |ID= –4.5A
Qgs
Gate to Source Gate Charge
2
nC|| |Qgd
Gate to Drain “Miller” Charge
2
nC|| |**Drain-Source Diode Characteristics**|| |IS
Maximum Continuous Drain-Source Diode Forward Current
–1.3
A
VSD
Source to Drain Diode Forward Voltage VGS = 0V, IS = –1.3A(Note 2)
–0.8
–1.2
V
trr
Reverse RecoveryTime
IF= –4.5A, di/dt = 100A/µs
24
36
ns
Qrr
Reverse RecoveryCharge
13
20
nC
~~ree~~|| |**Notes:**|| |**1:** RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.RθJCis|| |guaranteed by design while RθCAis determined by user’s board design.|| a. 78°C/W when mounted on a 1 in[2 ] pad of 2 oz copper on FR-4 board. b. 156°C/W when mounted on a minimum pad of 2 oz copper. - **2:** Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. **www.onsemi.com** **2** ## **Typical Characteristics** TJ = 25°C unless otherwise noted **==> picture [464 x 576] intentionally omitted <==** **----- Start of picture text -----**
20 2.2
VGS = -3.0V VGS = -2.5V VGS = -2.0V VGS = -2.5V
15 VGS = -3.5V 1.8
VGS = -4.5V VGS = -3.0V
10 1.4 VGS = -3.5V
VGS = -2.0V
5 PULSE DURATION = 80 µ s 1.0
VGS = -1.5V DUTY CYCLE = 0.5%MAX PULSE DURATION = 80 µ s VGS = -4.5V
DUTY CYCLE = 0.5%MAX
0 0.6
0 1 2 3 4 0 5 10 15 20
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6 200
ID =-4.5A PULSE DURATION = 80 µ s
VGS = -4.5V DUTY CYCLE = 0.5%MAX
1.4 160
1.2 120
TJ = 125 [o] C
1.0 80
0.8 40
ID = -2.2A TJ = 25 [o] C
0.6 0
-50 -25 0 25 50 75 100 125 150 1.5 2.0 2.5 3.0 3.5 4.0 4.5
TJ, JUNCTION TEMPERATURE ( [o] C) -VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to
vs Junction Temperature Source Voltage
20 10
PULSE DURATION = 80 µ s VGS = 0V
DUTY CYCLE = 0.5%MAX VDD = -5V
1
15
0.1 TJ = 150 [o] C
10
TJ = 25 [o] C
0.01
TJ = 150 [o] C
5
TJ = 25 [o] C 0.001
TJ = -55 [o] C TJ = -55 [o] C
0 0.0001
1.0 1.5 2.0 2.5 3.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
NORMALIZED
, DRAIN CURRENT (A)
D
-I
DRAIN TO SOURCE ON-RESISTANCE
)
Ω
m
(
, DRAIN TO
NORMALIZED
rDS(on)
SOURCE ON-RESISTANCE
DRAIN TO SOURCE ON-RESISTANCE
, DRAIN CURRENT (A)
D
-I
, REVERSE DRAIN CURRENT (A)
S
-I
**----- End of picture text -----**
**www.onsemi.com 3** ## **Typical Characteristics** TJ = 25°C unless otherwise noted **==> picture [467 x 565] intentionally omitted <==** **----- Start of picture text -----**
5 2000
ID = -4.5A VDD = -5V
4 1000 Ciss
VDD = -10V
3
VDD = -15V
2 Coss
1 f = 1MHz
100 VGS = 0V C rss
0 70
0 2 4 6 8 10 12 0.1 1 10 20
Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain
to Source Voltage
1 100
VGS = 0V
r LIMIT
0.1 DS(on) 10us
10 100us
0.01 TJ = 150 [o] C 1ms
1 10ms
1E-3
100ms
TJ = 25 [o] C 0.1
1E-4 SINGLE PULSE 1s
TJ = MAX RATED DC
TA = 25 [O] C
1E-5 0.01
0 5 10 15 20 0.1 1 10 50
-VGS, GATE TO SOURCE VOLTAGE(V)
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Gate Leakage Current vs Gate to Figure 10. Forward Bias Safe
Source Voltage Operating Area
50
DUTY CYCLE-DESCENDING ORDER
SINGLE PULSE 1
40 TRA θ JA=25 = 156oC oC/W D = 0.5 0.2
0.1
30 0.1 0.05
0.02 PDM
0.01
20
SINGLE PULSE 0.01 t1
SINGLE PULSE t2
10 NOTES:
DUTY FACTOR: D = t1/t2
0.001 PEAK TJ = PDM x Z θJA x R θJA + TA
0 -4 -3 -2 -1 0 1 2
-3 -2 -1 0 1 2 10 10 10 10 10 10 10
10 10 10 10 10 10
t, RECTANGULAR PULSE DURATION (s)
t, PULSE WIDTH (s)
Figure 11. Single Pulse Maximum Power Dissipation Figure 12. Transient Thermal Response Curve
CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE(V)
GS
-V
, DRAIN CURRENT (A)
D
-I
, GATE LEAKAGE CURRENT(mA)
g
-I
IMPEDANCE, ZJA θ
NORMALIZED THERMAL
,PEAK TRANSIENT POWER (W)
(PK)
P
**----- End of picture text -----**
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