# Dual MOSFET, Dual N and P Channel, 25 V, 25 V, 680 mA, 460 mA, 0.45 ohm

**URL**: https://novapart.co/products/FDC6321C/dual-mosfet-n-and-p-channel-25-v-680-ma-460-045
**SKU**: FDC6321C
**Manufacturer**: MULTICOMP PRO
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.0480
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (04-Feb-2026) |
| No. Of Pins | 6Pins |
| Channel Type | Dual N and P Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | SOT-23 |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 900mW |
| Power Dissipation P Channel | 900mW |
| Drain Source Voltage Vds N Channel | 25V |
| Drain Source Voltage Vds P Channel | 25V |
| Continuous Drain Current Id N Channel | 680mA |
| Continuous Drain Current Id P Channel | 460mA |
| Drain Source On State Resistance N Channel | 0.45ohm |
| Drain Source On State Resistance P Channel | 1.1ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4926978/)

## **Dual N and P Channel MOSFET** 

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## **Features** 

- �N−Channel�0.68�A,�25�V� RDS(ON)�=�0.45Ω�@�VGS�=�4.5�V 

- �P−Channel�−0.46�A,�−25�V RDS(ON)�=�1.1Ω�@�VGS�=�−4.5�V 

- �Very�Low�Level�Gate�Drive�Requirements�Allowing�Direct Operation�in�3�V�Circuits.�VGS(th)�<�1.0�V. 

**==> picture [95 x 94] intentionally omitted <==**

- Gate−Source�Zener�for�ESD�Ruggedness.�>6�kV�Human�Body�Model 

- Replace�Multiple�Dual�NPN�&�PNP�Digital�Transistors 

- This�is�a�Pb−Free�Device 

## **Absolute Maximum Ratings (TA = 25°C unless otherwise noted)** 

|**Parameter**|**Parameter**|**Symbol**|**N−Channel**|**P−Channel**|**Unit**|
|---|---|---|---|---|---|
|Drain-SourceVoltage,PowerSupplyVoltage||VDS,VCC|25|-25|V|
|Gate-SourceVoltage||VGS,VIN|8|-8||
|ContinuousDrainCurrent||ID,IO|0.68|-0.46|A|
|PulsedDrainCurrent|||2|-1.5||
|PowerDissipation|(Note1a)|PD|0.9||W|
||(Note1b)||0.7|||
|ThermalResistance,JunctiontoAmbient(Note1a)||RᶿJA|140||°C/W|
|ThermalResistance,Junction−to−Case(Note1)||RᶿJC|60|||
|ElectrostaticDischargeRatingMIL-STD-883D<br>HumanBodyModel(100pF/1500Ω)||ESD|6||kV|
|OperatingandStorageTemperatureRange||TJ,Tstg|-55to150||°C|



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## **Dual N and P Channel MOSFET** 

## **Electrical Characteristics (TJ = 25°C unless othewise specified)** 

|**Characteristic**|**Symbol**|**Test Conditions**|**Type**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|Drain-SourceBreakdown<br>Voltage|BVDSS|ID=250μA,VGS=0V<br>ID=-250μA,VGS=0V|N−Ch<br>P−Ch|25<br>-25|||V|
|BreakdownVoltage<br>TemperatureCoefcient|ΔBVDSS/ΔTJ|ID=-250μA,Referencedto25°C<br>ID=-250μA,Referencedto25°C|N−Ch<br>P−Ch||26<br>-22||mV/°C|
|ZeroGateVoltageDrain<br>Current|IDSS|VDS=20V,VGS=0V,TJ=55°C|N−Ch|||1|uA|
|||||||10||
|||VDS=-20V,VGS=0V,TJ=55°C|P−Ch|||-1|nA|
|||||||-10||
|GatetoSourceLeakage<br>Current|IGSS|VDS=0V,VGS=8V<br>VDS=0V,VGS=-8V|N−Ch<br>P−Ch|||100<br>-100|nA|
|GatetoSourceThreshold<br>Voltage|VGS(th)|VDS=VGS,ID=250μA<br>VDS=VGS,ID=-250μA|N−Ch<br>P−Ch|0.65<br>-0.65|0.8<br>-0.86|1.5<br>-1.5|V|
|GatetoSourceThreshold<br>VoltageTemperature<br>Coefcient|ΔVGS(th)/ΔTJ|ID=250μA,referencedto25°C<br>ID=-250μA,referencedto25°C|||-2.6<br>2.1||mV/°C|
|StaticDrain-Source<br>On-Resistance|RDS(On)|VGS=-4.5V,ID=0.5A|N−Ch||0.33|0.45|Ω|
|||VGS=4.5V,ID=0.5A,TJ=125°C|||0.51|0.72||
|||VGS=-2.7V,ID=0.25|||0.44|0.6||
|||VGS=-4.5V,ID=-0.5A|P−Ch||0.87|1.1||
|||VGS=-4.5V,ID=-0.5A,TJ=125°|||1.21|1.8||
|||VGS=-2.7V,ID=-0.25A|||1.22|1.5||
|OnStateDrainCurrent|ID(ON)|VGS=4.5V,VDS=5V<br>VGS=-4.5V,VDS=-5V|N−Ch<br>P−Ch|1<br>-1|||A|
|ForwardTransconductance|gFS|VDD=5V,ID=0.5A<br>VDD=-5V,ID=-0.5A|N−Ch<br>P−Ch||1.45<br>0.8||S|
|InputCapacitance|Ciss|N−Channel<br>VGS=0V,VDS=10V,<br>f=1MHz<br>P−Channel<br>VGS=0V,VDS=-10V,<br>f=1MHz|N−Ch<br>P−Ch||50<br>63||pF|
|OutputCapacitance|Coss||N−Ch<br>P−Ch||28<br>34|||
|ReverseTransferCapacitance|Crss||N−Ch<br>P−Ch||9<br>10|||
|TotalGateCharge|Qg|N−Channel<br>VDS=5V,ID=0.5A,VGS=4.5V<br>P−Channel<br>VDS=−5V,ID=−0.25A,VGS=<br>−4.5V|N−Ch<br>P−Ch||1.64<br>1.1|2.3<br>1.5|nC|
|GateSourceCharge|Qgs||N−Ch<br>P−Ch||0.38<br>3.2|||
|GateDrainCharge|Qgd||N−Ch<br>P−Ch||0.45<br>0.25|||



Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

19/05/26 V1.0 

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## **Dual N and P Channel MOSFET** 

|**Characteristic**|**Symbol**|**Test Conditions**|**Type**<br>**Min**<br>**Typ**|
|---|---|---|---|
|Turn-OnDelayTime|td(on)<br>tr<br>td(of)<br>tf|N−Channel<br>VDD=5V,ID=0.5A<br>VGS=4.5V,RGEN=50Ω<br>P−Channel<br>VDD=-5V,ID=-0.5A<br>VGS=-4.5V,RGEN=50Ω|N−Ch<br>P−Ch<br>3<br>7|
|Turn-OnRiseTime|||N−Ch<br>P−Ch<br>8<br>9|
|Turn-OfDelayTime|||N−Ch<br>P−Ch<br>17<br>55|
|Turn-OfFallTime|||N−Ch<br>P−Ch<br>13<br>35|
|SourcetoDrainDiodeForward<br>Voltage<br>(Note2)|VSD<br>VG<br>VG|VGS=0V,IS=0.5A<br>S=0V,IS=0.5A,TJ=125°C<br>VGS=0V,IS=−0.5A<br>S=0V,IS=−0.5A,TJ=125°C|N−Ch<br>N−Ch<br>P−Ch<br>P−Ch<br>0.83<br>0.69<br>-0.89<br>-0.75|
|ReverseRecoveryCharge|IS||N−Ch<br>P−Ch|



Product�parametric�performance�is�indicated�in�the�Electrical�Characteristics�for�the�listed�test�conditions,�unless�otherwise� noted.�Product�performance�may�not�be�indicated�by�the�Electrical�Characteristics�if�operated�under�different�conditions. NOTES: 

1.�RθJA�is�the�sum�of�the�junction−to−case�and�case−to−ambient�thermal�resistance�where�thecase�thermal�reference�is� defined�as�the�solder�mounting�surface�of�the�drain�pins.�RθJC�is�guaranteed�by�design�while�RθJA�is�determined�by�the� user’s�board�design. 

�a.�140°C/W�on�a�0.125�in[2] �pad�of�2�oz.�copper. 

�b.�180°C/W�on�a�0.005�in[2] �pad�of�2�oz.�copper. 

- 2.�Pulse�Test:�Pulse�Width�<�300μs,�Duty�Cycle�<�2.0%. 

## **Typical Characterisitics** 

## TYPICAL�CHARACTERISTICS:�N-CHANNEL 

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Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

19/05/26 V1.0 

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## **Dual N and P Channel MOSFET** 

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## TYPICAL�CHARACTERISTICS:�P-CHANNEL 

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Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

19/05/26 V1.0 

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## **Dual N and P Channel MOSFET** 

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## **Part Number Table** 

|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|NAndPChannelDualMOSFET,25V,0.68A,-25V,-0.46A|FDC6321C|



**Important Notice :** �This�data�sheet�and�its�contents�(the�“Information”)�belong�to�the�members�of�the�AVNET�group�of�companies�(the�“Group”)�or�are�licensed�to�it.�No�licence�is�granted�for� the�use�of�it�other�than�for�information�purposes�in�connection�with�the�products�to�which�it�relates.�No�licence�of�any�intellectual�property�rights�is�granted.�The�Information�is�subject�to�change� without�notice�and�replaces�all�data�sheets�previously�supplied.�The�Information�supplied�is�believed�to�be�accurate�but�the�Group�assumes�no�responsibility�for�its�accuracy�or�completeness,� any�error�in�or�omission�from�it�or�for�any�use�made�of�it.�Users�of�this�data�sheet�should�check�for�themselves�the�Information�and�the�suitability�of�the�products�for�their�purpose�and�not�make� any�assumptions�based�on�information�included�or�omitted.�Liability�for�loss�or�damage�resulting�from�any�reliance�on�the�Information�or�use�of�it�(including�liability�resulting�from�negligence�or� where�the�Group�was�aware�of�the�possibility�of�such�loss�or�damage�arising)�is�excluded.�This�will�not�operate�to�limit�or�restrict�the�Group’s�liability�for�death�or�personal�injury�resulting�from�its� negligence.�Multicomp�Pro�is�the�registered�trademark�of�Premier�Farnell�Limited�2019. 

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- [Supplier page](https://es.farnell.com/multicomp-pro/fdc6321c/mosfet-dual-n-p-ch-25v-0-68a-sot/dp/4926978)
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