# Power MOSFET, N Channel, 40 V, 240 A, 600 µohm, H-PSOF, Surface Mount

![Product image](https://novapart.co/image/farnell:3588813/)

**URL**: https://novapart.co/products/FDBL9401-F085T6/power-mosfet-n-channel-40-v-240-a-600-ohm-h-psof
**SKU**: FDBL9401-F085T6
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.4400
**Stock**: 1000+
**Lead Time**: 141 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 180.7W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | H-PSOF |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 240A |
| Drain Source On State Resistance | 600µohm |
| Gate Source Threshold Voltage Max | 2.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3588813/)

## MOSFET - Power, Single N-Channel, TOLL 40 V, 0.67 m 240 A 

## FDBL9401-F085T6 

## **Features** 

- Low R to Minimize Conduction Losses DS(on) 

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- Low QG and Capacitance to Minimize Driver Losses 

- AEC−Q101 Qualified and PPAP Capable 

- Small Footprint (TOLL) for Compact Design 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

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V(BR)DSS RDS(ON) MAX ID MAX<br>40 V 0.67 m  @ 10 V 240 A<br>eeee ee<br>**----- End of picture text -----**<br>


## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|C unless otherwise noted)|||
|---|---|---|---|---|---|
|**Parameter**|||**Symbol**|**Value**|**Unit**|
|Drain−to−Source Voltage<br>~~ee~~<br>~~ee~~|||VDSS<br>~~ee~~<br>~~ee~~<br>e**e**<br>|40<br>~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|
|Gate−to−Source Voltage<br>~~ee~~<br>~~ee~~|||VGS<br>~~ee ~~<br>~~ee~~<br>e**e**<br>|+20/−16<br> ~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|
|Continuous Drain<br>Current R JC<br>(Notes 1, 3)<br>~~ee~~|Steady<br>State<br> <br>~~ee~~|TC= 25°C<br>~~e~~|ID<br>e**e**<br>~~e~~|240<br>~~ee~~|A|
|||TC= 100°C<br>~~e~~||240<br>~~ee~~||
|(Notes 1, 3)<br>Power Dissipation<br>R JC(Note 1)<br>~~ee ~~<br>~~a~~||TC= 25°C<br> ~~e~~<br>~~ee~~|PD<br>e**e** <br>~~e~~<br>~~ee~~|180.7<br> ~~ee~~<br>~~ee~~|W<br>~~ee~~|
|||TC= 100°C<br>~~ee~~||90.3<br>~~ee~~||
|Continuous Drain<br>Current R JA<br>(Notes 1, 2, 3)<br>~~a ~~<br>~~ee~~<br>~~a ee~~|Steady<br>State<br> ~~ee~~<br>~~ee~~<br>~~pe~~<br>~~ee~~<br>~~|~~|TA= 25°C<br>~~ee ~~<br>~~ee~~<br>~~pe~~<br>|ID<br> ~~ee~~<br>~~ee~~<br><br>~~ee~~|58.4<br>~~ee~~<br>~~ee~~<br>~~|~~<br>|A<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|||TA= 100°C<br>~~ee~~<br>~~pe~~<br>~~ee~~||41.3<br>~~ee~~<br>~~|~~<br>~~ee~~||
|Power Dissipation<br>R JA(Notes 1, 2)<br>~~a ee~~||TA= 25°C<br>~~pe~~<br>~~ee~~<br>~~|~~|PD<br> <br>~~ee~~|4.3<br>~~|~~<br>~~ee~~<br>~~Se~~|W<br>~~ee~~|
|||TA= 100°C<br>~~pe ~~<br>~~ee~~<br>~~|~~||2.1<br> ~~|~~<br>~~ee~~<br>~~Se~~||
|Pulsed Drain Current<br>~~ee~~|TA= 25°C, tp= 10 s<br>~~ee ~~<br>~~|~~||IDM<br> ~~ee~~|2758<br>~~ee~~<br>~~Se~~|A<br>~~ee~~|
|Operating Junction and Storage Temperature<br>Range|||TJ, Tstg|−55 to<br>+175|°C|
|Source Current (Body Diode)|||IS|138|A|
|Single Pulse Drain−to−Source Avalanche<br>Energy (IL(pk)= 45 A, L = 1 mH)|||EAS|1012|mJ|
|Lead Temperature for Soldering Purposes<br>(1/8″from case for 10 s)|||TL|260|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL RESISTANCE MAXIMUM RATINGS** 

~~ee~~ Junction−to−Case − Steady State **Parameter Symbol** R ~~ee~~ JC **Value** 0.83 ~~ee~~ ° **Unit** C/W ~~jjee~~ Junction−to−Ambient − Steady State (Note 2) ~~ee~~ R JA 35 _ 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. Current is limited by bondwire configuration. 

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D (9)<br>G (1)<br>S (2 − 8)<br>**----- End of picture text -----**<br>


**N−CHANNEL MOSFET** 

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H−PSOF8L<br>CASE 100CU<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**<br>**Package**<br>**Shipping**†|
|---|
|FDBL9401−F085T6<br>H−PSOF8L<br>2000 / Tape &|
|(Pb−Free)<br>Reel|
|†For information on tape and reel specifications,<br>including part orientation and tape sizes, please<br>refer to our Tape and Reel Packaging Specification<br>Brochure, BRD8011/D.|



2. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. 

3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. 

Publication Order Number: **FDBL9401−F085T6/D** 

**1** 

© Semiconductor Components Industries, LLC, 2019 **May, 2021 − Rev. 2** 

**FDBL9401−F085T6** 

**Table 1. ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**Table 1. ELECTRICAL CHARACTERIS**|**TICS**(TJ= 2|5°C unless otherwise noted)|5°C unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Conditions**||**Min**|**Typ**|**Max**|**Units**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|ID= 250�A, VGS= 0 V||40|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ||||23.4||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VDS= 40 V, VGS= 0 V|TJ= 25°C|||1|�A|
||||TJ= 175°C|||1|mA|
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS|= +20/−16 V|||±100|nA|
|**ON CHARACTERISTICS**(Note 4)||||||||
|Gate Threshold Voltage|VGS(th)|VGS= VDS, ID= 290�A||2|2.8|4|V|
|Threshold Temperature Coefficient|VGS(th)/TJ||||−6.5||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 50 A|||0.6|0.67|m�|
|**CHARGES, CAPACITANCES & GATE RESISTANCE**||||||||
|Input Capacitance|Ciss|VGS= 0 V, VDS= 25 V, f = 100 KHz|||10000||pF|
|Output Capacitance|Coss||||5100||pF|
|Reverse Transfer Capacitance|Crss||||177||pF|
|Gate Resistance|Rg|VGS= 0.5 V, f = 1 MHz|||2.1||�|
|Total Gate Charge|QG(tot)|VGS= 10 V, VDS= 20 V, ID= 50 A|||148||nC|
|Threshold Gate Charge|QG(th)|VGS= 0 to 2 V|||18||nC|
|Gate−to−Source Gate Charge|Qgs|VDD= 32 V, ID= 50 A|||42||nC|
|Gate−to−Drain “Miller” Charge|Qgd||||30||nC|
|Plateau Voltage|VGP||||4.5||V|
|**SWITCHING CHARACTERISTICS**(Note 5)||||||||
|Turn−On Delay Time|td(on)|VGS= 10 V, VDD= 20 V,<br>ID= 50 A, RGEN= 6�|||37||ns|
|Turn−On Rise Time|tr||||76||ns|
|Turn−Off Delay Time|td(off)||||133||ns|
|Turn−Off Fall Time|tf||||65||ns|
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Source−to−Drain Diode Voltage|VSD|ISD= 50 A, VGS= 0 V|||0.77|1.2|V|
|Reverse Recovery Time|trr|VGS= 0 V, dIS/dt= 100 A/�s,<br>IS= 50 A|||97||ns|
|Charge Time|ta||||37||ns|
|Discharge Time|tb||||60||ns|
|Reverse Recovery Charge|Qrr||||218||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

4. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2%. 

5. Switching characteristics are independent of operating junction temperatures 

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**2** 

**FDBL9401−F085T6** 

## **TYPICAL CHARACTERISTICS** 

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1200 1200<br>VGS = 10 V VGS = 8.0 V VDS = 5 V<br>VGS = 9.0 V VGS = 7.0 V TJ = 25 ° C<br>900 900<br>600 600<br>VGS = 6.0 V<br>300 300<br>VGS = 5.0 V<br>TJ = 175 ° C TJ = −55 ° C<br>0 0<br>0 0.5 1.0 1.5 2.0 2.5 3.0 2 3 4 5 6 7 8<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>5 1.3<br>ID = 50 A TJ = 25 ° C<br>4 1.1<br>VGS = 6 V<br>3 0.9<br>2 0.7<br>TJ = 175 ° C VGS = 10 V<br>1 0.5<br>TJ = 25 ° C<br>0 0.3<br>4 5 6 7 8 9 10 10 20 30 40 50 60 70 80 90 100<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>1.8 1000<br>1.7 VGS = 10 V<br>1.6 ID = 50 A T J  = 175 ° C<br>100<br>1.5 TJ = 150 ° C<br>1.4<br>1.3 10 T J = 125 ° C<br>1.2<br>1.1<br>1.0 1 TJ = 85 ° C<br>0.9<br>0.8<br>0.7 0.1<br>−75 −50 −25 0 25 50 75 100 125 150 175 200 5 10 15 20 25 30 35 40<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) �<br>) �<br>, ON−RESISTANCE (m<br>DS(on)<br>R<br>, DRAIN−TO−SOURCE RESISTANCE (m<br>DS(on)<br>R<br>A)<br>�<br>, NORMALIZED DRAIN−TO−<br>SOURCE ON−RESISTANCE<br>DS(on)<br>R , REVERSE LEAKAGE CURRENT (<br>IDSS<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**Figure 6. Drain−to−Source Leakage Current vs. Voltage** 

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**3** 

**FDBL9401−F085T6** 

## **TYPICAL CHARACTERISTICS** 

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100K 10<br>Q G(tot)<br>CISS 8<br>10K<br>C OSS 6 QGS QGD<br>1K<br>4<br>CRSS<br>100 VGS = 0 V 2 T J = 25 ° C<br>f = 1 MHz ID = 50 A<br>TJ = 25 ° C V DS  = 32 V<br>10 0<br>0 5 10 15 20 25 30 35 40 0 30 60 90 120 150<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)<br>Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total<br>Charge<br>1000 300<br>VGS = 10 V td(off) VGS = 0 V<br>VDS = 20 V<br>I D  = 50 A tf 30<br>tr<br>t d(on) 3<br>100<br>0.3 TJ = 175 ° C<br>0.03<br>TJ = 25 ° C TJ = −55 ° C<br>10 0.003<br>1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2<br>RG, GATE RESISTANCE ( � ) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>5000 300<br>1000<br>10  � s<br>100<br>TJ(initial) = 25 ° C<br>100 100  � s<br>TC = 25 ° C<br>Single Pulse VGS ≤  10 V TJ(initial) = 150 ° C<br>10<br>RDS(on) Limit 1 ms<br>Thermal Limit<br>Package Limit 100 ms 10 ms<br>1 10<br>0.1 1 10 100 0.01 0.1 1 10 100<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (mS)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>t, SWITCHING TIME (ns)<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>, DRAIN CURRENT (A)<br>ID , AVALANCHE CURRENT (A)<br>IAS<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

**Figure 12. Maximum Drain Current vs. Time in Avalanche** 

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**4** 

**FDBL9401−F085T6** 

## **TYPICAL CHARACTERISTICS** 

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1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>0.01 0.01<br>Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t, RECTANGULAR PULSE DURATION (s)<br>, EFFECTIVE TRANSIENT<br>JC THERMAL RESISTANCE<br>�<br>R<br>**----- End of picture text -----**<br>


**Figure 13. Transient Thermal Impedance** 

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**5** 

## MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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H−PSOF8L 11.68x9.80<br>CASE 100CU<br>ISSUE B<br>DATE 20 MAY 2022<br>**----- End of picture text -----**<br>


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GENERIC<br>MARKING DIAGRAM*<br>AYWWZZ<br>XXXXXXXX<br>XXXXXXXX<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>ZZ = Assembly Lot Code<br>XXXX = Specific Device Code<br>**----- End of picture text -----**<br>


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*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ = ”, may<br>or may not be present. Some products may<br>not follow the Generic Marking.<br>**----- End of picture text -----**<br>


Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

## **DOCUMENT NUMBER: 98AON13813G** 

## **H−PSOF8L 11.68x9.80** 

## **PAGE 1 OF 1** 

## **DESCRIPTION:** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba onsemi **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative 

◊ 

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