# Power MOSFET, N Channel, 80 V, 240 A, 0.002 ohm, H-PSOF, Surface Mount ![Product image](https://novapart.co/image/farnell:3004003/) **URL**: https://novapart.co/products/FDBL86363-F085/power-mosfet-n-channel-80-v-240-a-0002-ohm-h-psof **SKU**: FDBL86363-F085 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €1.5100 **Stock**: 1000+ **Lead Time**: 120 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:240A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 8Pins | | Channel Type | N Channel | | Product Range | PowerTrench | | Qualification | AEC-Q101 | | Power Dissipation | 357W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | H-PSOF | | Drain Source Voltage Vds | 80V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 240A | | Drain Source On State Resistance | 0.002ohm | | Gate Source Threshold Voltage Max | 3V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3004003/) ## **FDBL86363-F085** ## **N-Channel PowerTrench[® ] MOSFET** ## **80 V, 240 A, 2.0 m** Ω ## **Features** | Typical RDS(on) = 1.5 mΩ at VGS = 10V, ID = 80 A | Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 A **D** sad PeSsgi1 | UIS Capability | RoHS Compliant | Qualified to AEC Q101 **Applications G** y rT] Automotive Engine Control nSols poHs c°4 “ | PowerTrain Management re | Solenoid and Motor Drivers > **S** 2 7 Integrated Starter/Alternator 9 ## rT] **Applications** - | Primary Switch for 12V Systems ## **MOSFET Maximum Ratings** TJ = 25°C unless otherwise noted. |**Symbol**|**Parameter**|**Ratings**|**Units**| |---|---|---|---| |VDSS|Drain-to-Source Voltage|80|V| |VGS|Gate-to-Source Voltage|±20|V| |ID|Drain Current - Continuous(VGS=10) (Note 1)
TC = 25°C|240|A| ||Pulsed Drain Current
TC = 25°C|See Figure 4|| |EAS|Single Pulse Avalanche Energy
(Note 2)|512|mJ| |PD|Power Dissipation|357|W| ||Derate Above 25oC|2.38|W/oC| |TJ, TSTG|Operatingand Storage Temperature|-55 to + 175|oC| |RθJC|Thermal Resistance, Junction to Case|0.42|oC/W| |RθJA|Maximum Thermal Resistance, Junction to Ambient
(Note 3)|43|oC/W| ## **Notes:** - 1: Current is limited by silicon. - 2: Starting TJ = 25°C, L = 0.25mH, IAS = 64A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche. - 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in[2 ] pad of 2oz copper. ## **Package Marking and Ordering Information** |**Device Marking**|**Device**|**Package**|**Reel Size**|**Tape Width**|**Quantity**| |---|---|---|---|---|---| |FDBL86363|FDBL86363-F085|MO-299A|-|-|-| Publication Order Number: FDBL86363-F085/D ©2015 Semiconductor Components Industries, LLC. August-2017, Rev. 2 **Electrical Characteristics** TJ = 25°C unless otherwise noted. |**Symbol**|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Units**| |---|---|---|---|---|---|---|---| |**Off Characteristics**|||||||| |BVDSS|Drain-to-Source Breakdown Voltage|ID= 250μA, VGS= 0V||80|-|-|V| |IDSS|Drain-to-Source Leakage Current|VDS= 80V,
VGS= 0V|TJ= 25oC|-|-|1|μA| ||||TJ= 175oC (Note 4)|-|-|1|mA| |IGSS|Gate-to-Source Leakage Current|VGS= ±20V||-|-|±100|nA| |**On Characteristics**|||||||| |VGS(th)|Gate to Source Threshold Voltage|VGS= VDS, ID= 250μA||2.0|3.0|4.0|V| |RDS(on)|Drain to Source On Resistance|ID= 80A,
VGS= 10V|TJ= 25oC|-|1.5|2.0|mΩ| ||||TJ= 175oC(Note 4)|-|3.1|4.1|mΩ| |**Dynamic Characteristics**|||||||| |Ciss|Input Capacitance|VDS= 40V, VGS= 0V,
f = 1MHz||-|10000|-|pF| |Coss|Output Capacitance|||-|1540|-|pF| |Crss|Reverse Transfer Capacitance|||-|70|-|pF| |Rg|Gate Resistance|f = 1MHz||-|2.8|-|Ω| |Qg(ToT)|Total Gate Charge at 10V|VGS= 0 to 10V||-|130|169|nC| |Qg(th)|Threshold Gate Charge|VGS= 0 to 2V||-|18|27|nC| |Qgs|Gate-to-Source Gate Charge|||-|47|-|nC| |Qgd|Gate-to-Drain “Miller“ Charge|||-|24|-|nC| |**Switching Characteristics**|||||||| |ton|Turn-On Time|VDD= 40V, ID= 80A,
VGS= 10V, RGEN= 6Ω||-|-|133|ns| |td(on)|Turn-On Delay|||-|39|-|ns| |tr|Rise Time|||-|63|-|ns| |td(off)|Turn-Off Delay|||-|61|-|ns| |tf|Fall Time|||-|33|-|ns| |toff|Turn-Off Time|||-|-|140|ns| |**Drain-Source Diode Characteristics**|||||||| |VSD|Source-to-Drain Diode Voltage|ISD=80A, VGS= 0V||-|-|1.25|V| |||ISD= 40A, VGS= 0V||-|-|1.2|V| |trr|Reverse-RecoveryTime|IF= 80A, dISD/dt = 100A/μs,
VDD=64V||-|83|108|ns| |Qrr|Reverse-RecoveryCharge|||-|118|153|nC| **Note:** - 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. **www.onsemi.com** **2** ## **Typical Characteristics** **==> picture [433 x 551] intentionally omitted <==** **----- Start of picture text -----**
1.2 350
CURRENT LIMITED VGS = 10V
1.0 BY SILICON
280
0.8
210
0.6
140
0.4
70
0.2
0.0 0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE( [o] C) TC, CASE TEMPERATURE( [o] C)
Figure 1. Normalized Power Dissipation vs. Case Figure 2. Maximum Continuous Drain Current vs.
Temperature Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10 PDM
0.05
0.02
0.1 0.01 t1
t2
NOTES:
DUTY FACTOR: D = t 1 /t 2
SINGLE PULSE PEAK TJ = PDM x Z θ JA x R θ JA + TC
0.01
10-5 10-4 10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
VGS = 10V TC = 25 [o] C
FOR TEMPERATURES
ABOVE 25 [o] C DERATE PEAK
CURRENT AS FOLLOWS:
1000 I = I2 175 - TC
150
100
SINGLE PULSE
10
10-5 10-4 10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION(s)
, DRAIN CURRENT (A)
ID
POWER DISSIPATION MULTIPLIER
IMPEDANCE, ZJC θ
NORMALIZED THERMAL
PEAK CURRENT (A)
,
IDM
**----- End of picture text -----**
**Figure 4. Peak Current Capability** **www.onsemi.com** **3** ## **Typical Characteristics** **==> picture [429 x 587] intentionally omitted <==** **----- Start of picture text -----**
2000
1000 If R = 0
1000 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
100
100us
10 STARTING TJ = 25 [o] C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(on) 10
1 1ms
SINGLE PULSE
TJ = MAX RATED STARTING TJ = 150 [o] C
10ms
TC = 25 [o] C 100ms
1
0.1 0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100 500 tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to ON Semiconductor Application Notes AN7514
Figure 5. Forward Bias Safe Operating Area and AN7515
Figure 6. Unclamped Inductive Switching
Capability
350 400
PULSE DURATION = 80 μ s
300 DUTY CYCLE = 0.5% MAX VGS = 0 V
VDD = 5V 100
250
200 TJ = 25 [o] C 10 T J = 175 [o] C
150 TJ = 25 [ o] C
100 1
TJ = 175 [o] C TJ = -55 [o] C
50
0 0.1
2 3 4 5 6 7 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics
350 350
VGS VGS
300 15V Top 300 15V Top
10V 10V
8V 8V
250 7V 250 7V
6V 6V
5.5V 5.5V
200 5V Bottom 200 5V Bottom
150 150
80 μ s PULSE WIDTH
100 Tj=25 [o] C 100 80 μ s PULSE WIDTH
Tj=175 [o] C
50 50
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics Figure 10. Saturation Characteristics
, DRAIN CURRENT (A)
D
I
, AVALANCHE CURRENT (A)
IAS
, DRAIN CURRENT (A)
ID , REVERSE DRAIN CURRENT (A)IS
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
**----- End of picture text -----**
**www.onsemi.com 4** ## **Typical Characteristics** **==> picture [433 x 601] intentionally omitted <==** **----- Start of picture text -----**
50 2.4
ID = 80A PULSE DURATION = 80 μ s PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
40 2.0
30 1.6
TJ = 175 [o] C TJ = 25 [o] C
20 1.2
10 0.8 ID = 80A
VGS = 10V
0 0.4
2 4 6 8 10 -80 -40 0 40 80 120 160 200
VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE( [o] C)
Figure 11. RDSON vs. Gate Voltage Figure 12. Normalized RDSON vs. Junction
Temperature
1.5 1.10
VGS = VDS ID = 5mA
ID = 250 μ A
1.2
1.05
0.9
1.00
0.6
0.95
0.3
0.0 0.90
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE( [o] C) TJ, JUNCTION TEMPERATURE ( [o] C)
Figure 13. Normalized Gate Threshold Voltage vs. Figure 14. Normalized Drain to Source
Temperature Breakdown Voltage vs. Junction Temperature
100000 10
ID = 80A
Ciss 8 VDD = 32V
10000 40V
48V
C oss 6
1000
4
100 Crss
2
f = 1MHz
V GS = 0V
10 0
0.1 1 10 100 0 30 60 90 120 150
VDS, DRAIN TO SOURCE VOLTAGE (V) Qg , GATE CHARGE(nC)
Figure 15. Capacitance vs. Drain to Source Figure 16. Gate Charge vs. Gate to Source
Voltage Voltage
) Ω
m
, DRAIN TO SOURCE NORMALIZED
ON-RESISTANCE (
rDS(on)
DRAIN TO SOURCE ON-RESISTANCE
NORMALIZED GATE
THRESHOLD VOLTAGE BREAKDOWN VOLTAGE
NORMALIZED DRAIN TO SOURCE
CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE(V)
GS
V
**----- End of picture text -----**
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