# Power MOSFET, N Channel, 100 V, 300 A, 0.002 ohm, H-PSOF, Surface Mount
**URL**: https://novapart.co/products/FDBL86062-F085/power-mosfet-n-channel-100-v-300-a-0002-ohm-h-psof
**SKU**: FDBL86062-F085
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.5100
**Stock**: 1000+
**Lead Time**: 134 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | PowerTrench |
| Qualification | AEC-Q101 |
| Power Dissipation | 429W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | H-PSOF |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 300A |
| Drain Source On State Resistance | 0.002ohm |
| Gate Source Threshold Voltage Max | 3.1V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3253678/)
## FDBL86062-F085 N-Channel POWERTRENCH MOSFET ® **100 V, 300 A, 2.0 m** Q.
## **Features**
**www.onsemi.com**
- Typical RDS(on) = 1.5 m Q at VGS = 10 V, ID = 80 A
- Typical Qg(tot) = 95 nC at VGS = 10 V, ID = 80 A
- UIS Capability
- Qualified to AEC Q101
- This Device is Pb−Free and is RoHS Compliant
## **Applications**
- Automotive Engine Control
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D
Ap
G
S
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- PowerTrain Management
- Solenoid and Motor Drivers
- Integrated Starter/Alternator
- Primary Switch for 12 V Systems
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H−PSOF8L 11.68x9.80
CASE 100CU
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## **MARKING DIAGRAM**
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$Y&Z&3&K
FDBL86062
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$Y = ON Semiconductor Logo &Z&3 = Data Code (Year & Week) &K = Lot FDBL86062 = Specific Device Code
## **ORDERING INFORMATION**
See detailed ordering and shipping information on page 2 of this data sheet.
Publication Order Number: **FDBL86062−F085/D**
**1**
© Semiconductor Components Industries, LLC, 2016 **March, 2019 − Rev. 3**
**FDBL86062−F085**
**MOSFET MAXIMUM RATINGS** TJ = 25 ° C unless otherwise noted
|**MOSFET MA**|**XIMUM RATINGS**TJ= 25°C unless otherwise noted|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Rating**|**Units**|
|VDSS|Drain−to−Source Voltage|100|V|
|VGS|Gate−to−Source Voltage|±20|V|
|ID|Drain Current-Continuous (VGS= 10) (Note 1)
TC= 25°C|300|A|
||Pulsed Drain Current
TC= 25°C|See Figure 4||
|EAS|Single Pulse Avalanche Energy (Note 2)|352|mJ|
|PD|Power Dissipation|429|W|
||Derate Above 25°C|2.9|W/°C|
|TJ, TSTG|Operating and Storage Temperature|−55 to +175|°C|
|R�JC|Thermal Resistance, Junction to Case|0.35|°C/W|
|R�JA|Maximum Thermal Resistance, Junction to Ambient (Note 3)|43|°C/W|
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. Current is limited by silicon.
2. Starting TJ = 25 ° C, L = 0.1 mH, IAS = 84 A, VDD = 100 V during inductor charging and VDD = 0 V during time in avalanche.
3. R θ JA is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is guaranteed by design, while R θ JA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in[2] pad of 2oz copper.
## **PACKAGE MARKING AND ORDERING INFORMATION**
|**Device Marking**|**Device**|**Package**|**Reel Size**|**Tape Width**|**Quantity**|
|---|---|---|---|---|---|
|FDBL86062|FDBL86062−F085|MO−299A|13”|24 mm|2000 Units|
## **ELECTRICAL CHARACTERISTICS** TJ = 25 ° C, unless otherwise noted
|**ELECTRIC**|**AL CHARACTERISTICS** TJ= 25°C|, unless otherwise n|oted|||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**||**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Units**|
|**OFF CHARACTERISTICS**||||||||
|BVDSS|Drain−to−Source Breakdown Voltage|ID= 250�A, VGS=|0 V|100|−|−|V|
|IDSS|Drain−to−Source Leakage Current|VDS= 100 V,
VGS= 0 V|TJ= 25°C|−|−|5|�A|
||||TJ= 175°C (Note 4)|−|−|2|mA|
|IGSS|Gate−to−Source Leakage Current|VGS=±20 V||−|−|±100|nA|
|**ON CHARACTERISTICS**||||||||
|VGS(th)|Gate to Source Threshold Voltage|VGS= VDS, ID= 250�A||2.0|3.1|4.5|V|
|RDS(on)|Drain to Source On Resistance|ID= 80 A,
VGS= 10 V|TJ= 25°C|−|1.5|2.0|m�|
||||TJ= 175°C (Note 4)|−|3.3|4.3||
|**DYNAMIC CHARACTERISTICS**||||||||
|Ciss|Input Capacitance|VDS= 50 V, VGS=
f = 1 MHz|0 V,|−|6970|−|pF|
|Coss|Output Capacitance|||−|3950|−||
|Crss|Reverse Transfer Capacitance|||−|29|−||
|Rg|Gate Resistance|f = 1 MHz||−|0.4|−|�|
|Qg(ToT)|Total Gate Charge at 10 V|VGS= 0 to 10 V|VDD= 80 V
ID= 80 A|−|95|124|nC|
|Qg(th)|Threshold Gate Charge|VGS= 0 to 2 V||−|13|−||
|Qgs|Gate−to−Source Gate Charge|||−|31|−||
|Qgd|Gate−to−Drain “Miller” Charge|||−|20|−||
**www.onsemi.com**
**2**
**FDBL86062−F085**
**ELECTRICAL CHARACTERISTICS** (continued) TJ = 25 ° C, unless otherwise noted
|**Symbol**|**Parameter**||**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|---|---|---|
|**SWITCHING CHARACTERISTICS**||||||||
|ton|Turn−On Time|VDD= 50 V, ID= 80 A,
VGS= 10 V, RGEN= 6�||−|−|73|ns|
|td(on)|Turn−On Delay|||−|31|−||
|tr|Rise Time|||−|25|−||
|td(off)|Turn−Off Delay|||−|36|−||
|tf|Fall Time|||−|9|−||
|toff|Turn−Off Time|||−|−|59||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|VSD|Source−to−Drain Diode Voltage|ISD= 80 A, VGS= 0 V||−|−|1.25|V|
|||ISD= 40 A, VGS= 0 V||−|−|1.2||
|trr|Reverse−Recovery Time|IF= 80 A, dISD/dt = 100 A/μs, VDD= 80 V||−|115|150|ns|
|Qrr|Reverse−Recovery Charge|||−|172|224|nC|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at TJ = 175 ° C. Product is not tested to this condition in production.
**www.onsemi.com**
**3**
**FDBL86062−F085**
## **TYPICAL CHARACTERISTICS**
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1.2 400
CURRENT LIMITED
350 BY PACKAGE VGS = 10V
1.0
300
0.8
250
0.6 200
150
0.4
100
0.2
50
0.0 0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE ( ° C) TC, CASE TEMPERATURE ( ° C)
Figure 1. Normalized Power Dissipation vs. Figure 2. Maximum Continuous Drain Current
Case Temperature vs. Case Temperature
2
DUTY CYCLE − DESCENDING ORDER
1 D = 0.50
0.20
0.10
0.05 PDM
0.02
0.01
0.1 SINGLE PULSE t 1
t2
NOTES:
DUTY FACTOR: D = t 1/t2
PEAK T J = PDM x Z �JA x R �JA + TC
0.01
10−5 10−4 10−3 10−2 10−1 100 101
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
VGS = 10 V TJ = 25 ° C
FOR TEMPERATURES
ABOVE 25° C DERATE PEAK
1000
CURRENT AS FOLLOWS:
I = I25 175 − T C
150
SINGLE PULSE
100
10−5 10−4 10−3 10−2 10−1 11 0
t, RECTANGULAR PULSE DURATION (s)
, DRAIN CURRENT (A)
ID
POWER DISSIPATION MULTIPLIER
JC
�
IMPEDANCE, Z
NORMALIZED THERMAL
, PEAK CURRENT (A)
IDM
**----- End of picture text -----**
**Figure 2. Maximum Continuous Drain Current vs. Case Temperature**
**Figure 4. Peak Current Capability**
**www.onsemi.com**
**4**
**FDBL86062−F085**
## **TYPICAL CHARACTERISTICS** (continued)
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2000
1000
100
10 OPERATION IN THIS 100 � s
AREA MAY BE
LIMITED BY r DS(on)
1 SINGLE PULSE 1 ms
T J = MAX RATED
TJ = 25 ° C 100 ms 10 ms
0.1
0.1 1 10 100 500
VDS, DRAIN TO SOURCE VOLTAGE (V)
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
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**----- Start of picture text -----**
1000
If R = 0
tAV = (L)(I AS )/(1.3*RATED BVDSS − VDD )
If R � 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS − V DD ) +1]
100
STARTING TJ = 25 ° C
10 STARTING TJ = 150 ° C
1
0.001 0.01 0.1 1 10 100 1000
tAV, TIME IN AVALANCHE (ms)
, AVALANCHE CURRENT (A)
IAS
**----- End of picture text -----**
NOTE: Refer to ON Semiconductor Application Notes AN7514 and AN7515
**Figure 5. Forward Bias Safe Operating Area**
## **Figure 6. Unclamped Inductive Switching Capability**
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350
PULSE DURATION = 250 � s
300 DUTY CYCLE = 0.5% MAX
VDD = 5 V
250
200 TJ = 25 ° C TJ = −55 ° C
150
100 TJ = 175 ° C
50
0
3 4 5 6 7
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
350
250 � s PULSE WIDTH
300 T J = 25 ° C
VGS
250 15 V Top
10 V
8 V
200 7 V
6 V
150 5.5 V
5 V Bottom
100
50
0
0 1 2 3 4 5
VDS, DRAIN TO SOURCE VOLTAGE (V)
, DRAIN CURRENT (A)
ID
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**Figure 9. Saturation Characteristics**
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**----- Start of picture text -----**
350
VGS = 0 V
100
10 TJ = 175 ° C TJ = 25 ° C
1
0.1
0.0 0.2 0.2 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Forward Diode Characteristics
350
250 � s PULSE WIDTH
300 T J = 175 ° C
VGS
250 15 V Top
10 V
8 V
200 7 V
6 V
150 5.5 V 5�V
Bottom
100
50
0
0 1 2 3 4 5
VDS, DRAIN TO SOURCE VOLTAGE (V)
, REVERSE DRAIN CURRENT (A)
IS
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**Figure 10. Saturation Characteristics**
**www.onsemi.com**
**5**
**FDBL86062−F085**
## **TYPICAL CHARACTERISTICS** (continued)
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**----- Start of picture text -----**
30
PULSE DURATION = 250 � s
DUTY CYCLE = 0.5% MAX
25
ID = 80 A
20
15
10
5 TJ = 175 ° C
TJ = 25 ° C
0
4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. RDSON vs. Gate Voltage
1.3
VGS = V DS
ID = 250 � A
1.1
0.9
0.7
0.5
0.3
−80 −40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE ( ° C)
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature
10000
Ciss
Coss
1000
100
f = 1 MHz
V GS = 0 V Crss
10
0.1 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
) �
, DRAIN TO SOURCE
ON−RESISTANCE (m
rDS(on)
NORMALIZED GATE
THRESHOLD VOLTAGE
CAPACITANCE (pF)
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**Figure 13. Normalized Gate Threshold Voltage vs. Temperature**
**Figure 15. Capacitance vs. Drain to Source**
**Voltage**
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**----- Start of picture text -----**
2.5
PULSE DURATION = 250 � s
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
ID = 80 A
VGS = 10 V
0.5
−80 −40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE( ° C)
Figure 12. Normalized RDSON vs. Junction
Temperature
1.10
ID = 5 mA
1.05
1.00
0.95
0.90
−80 −40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE ( ° C)
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
10
ID = 80 A
8 VDD = 50 V
VDD = 60 V
6 VDD = 40 V
4
2
0
0 20 40 60 80 100
Qg, GATE CHARGE (nC)
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
BREAKDOWN VOLTAGE
NORMALIZED DRAIN TO SOURCE
, GATE TO SOURCE VOLTAGE(V)
GS
V
**----- End of picture text -----**
**Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature**
**Figure 16. Gate Charge vs. Gate to Source Voltage**
POWERTRENCH is registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
**www.onsemi.com**
**6**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**H−PSOF8L 11.68x9.80** CASE 100CU ISSUE O
DATE 30 NOV 2016
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**DOCUMENT NUMBER: 98AON13813G** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed **STATUS: ON SEMICONDUCTOR STANDARD** versions are uncontrolled except when stamped “CONTROLLED COPY” in red. ~~**NEW STANDARD:**~~ © Semiconductor Components Industries, LLC, 2002 **http://onsemi.com** Case Outline Number: **October, 2002 − Rev. 0DESCRIPTION: H−PSOF8L 11.68x9.80 1 PAGE 1 OF 2XXX**
|**DOCUMENT NUMBER:**
**98AON13813G**
**PAGE 2 OF 2**
~~eT ©~~
~~——~~|**DOCUMENT NUMBER:**
**98AON13813G**
**PAGE 2 OF 2**
~~eT ©~~
~~——~~|
|---|---|
|**ISSUE**|**REVISION**
**DATE**|
|O|RELEASED FOR PRODUCTION FROM FAIRCHILD TO263D02 TO ON SEMICON-
30 NOV 2016|
||DUCTOR. REQ. BY I. CAMBALIZA.|
> **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
Case Outline Number:
© Semiconductor Components Industries, LLC, 2016 **November, 2016 − Rev. O**
**100CU**
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