# Power MOSFET, N Channel, 30 V, 34 A, 0.0015 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1495284/)

**URL**: https://novapart.co/products/FDB8832/power-mosfet-n-channel-30-v-34-a-00015-ohm-to-263
**SKU**: FDB8832
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.5200
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 2Pins |
| Channel Type | N Channel |
| Power Dissipation | 300W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 300W |
| Rds(On) Test Voltage | 20V |
| On Resistance Rds(On) | 0.0015ohm |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 34A |
| Drain Source On State Resistance | 0.0015ohm |
| Gate Source Threshold Voltage Max | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1495284/)

## **Is Now Part of** 

**To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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FDB8832<br>N-Channel Logic Level PowerTrench [®]  MOSFET<br>30V, 80A, 2.1m Ω<br>Features Applications<br>aa Typ rDS(on) = 1.5mΩ at VGS = 5V, ID = 80A Starter / Alternator Systems<br>a Typ Qg(5) = 100nC at VGS = 5V a Electronic Power Steering Systems<br>aa Low Miller Charge DC-DC Converters<br>a Low Qrr Body Diode<br>a UIS Capability (Single Pulse and Repetitive Pulse)<br>a RoHS Compliant<br>LEAD F R E E IMPLE<br>M<br>E<br>N<br>T<br>A<br>NOIT<br>**----- End of picture text -----**<br>


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www.fairchildsemi.com 

©2011 Fairchild Semiconductor Corporation FDB8832 Rev. A1 

**MOSFET Maximum Ratings** TC = 25°C unless otherwise noted 

|**MOSF**|**ET Maximum Ratings  **TC= 25°C unless otherwise noted|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Ratings**|**Units**|
|VDSS|Drain to Source Voltage|30|V|
|VGS|Gate to Source Voltage|±20|V|
|ID|Drain Current Continuous(TC< 165oC, VGS= 10V)|80|A|
||Drain Current Continuous(TC< 163oC, VGS= 5V)|80||
||Drain Current Continuous(Tamb= 25oC, VGS= 10V, with RθJA= 43oC/W)|34||
||Pulsed|See Figure 4||
|EAS|Single Pulse Avalanche Energy (Note 1)|1246|mJ|
|PD|Power Dissipation|300|W|
||Derate above 25oC|2|W/oC|
|TJ, TSTG|Operatingand Storage Temperature|-55 to +175|oC|
|**Thermal Characteristics**||||
|RθJC|Thermal Resistance, Junction to Case|0.5|oC/W|
|RθJA|Thermal Resistance, Junction to Ambient                                             (Note 2)|62|oC/W|
|RθJA|Thermal Resistance, Junction to Ambient, lin2copper pad area|43|oC/W|



## **Package Marking and Ordering Information** 

|**Device Marking**|**Device Marking**|**Device**|**Package**|**Package**|**Reel Size**|**Reel Size**|**Tape Width**|**Tape Width**|**Tape Width**|**Quantity**|**Quantity**|**Quantity**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|FDB8832||FDB8832|TO-263AB||330mm|||24mm||800 units|||
|**Electrical Characteristics**TJ= 25°C unless otherwise noted|||||||||||||
|**Symbol**|**Parameter**|||**Test Conditions**||||**Min**|**Typ**||**Max**|**Units**|
|**Off Characteristics**|||||||||||||
|BVDSS|Drain to Source Breakdown Voltage|||ID= 250μA, VGS||= 0V||30|-||-|V|
|IDSS|Zero Gate Voltage Drain Current|||VDS= 24V<br>VGS= 0V||||-|-||1|μA|
|||||||TJ= 150°C||-|-||250||
|IGSS|Gate to Source Leakage Current|||VGS=±20V||||-|-||±100|nA|
|**On Characteristics**|||||||||||||
|VGS(th)|Gate to Source Threshold Voltage|||VDS= VGS, ID= 250μA||||1.0|1.6||3.0|V|
|r<br>on)<br>DS(|Drain to Source On Resistance|||ID= 80A, VGS= 10V||||-|1.4||1.9|mΩ|
|||||ID= 80A, VGS= 5V||||-|1.5||2.1||
|||||ID= 80A, VGS= 4.5V||||-|1.6||2.2||
|||||ID= 80A, VGS= 10V<br>TJ= 175°C||||-|2.3||3.0||
|**Dynamic Characteristics**|||||||||||||
|Ciss|Input Capacitance|||VDS= 15V, VGS= 0V,<br>f = 1MHz||||-|11400||-|pF|
|Coss|Output Capacitance|||||||-|2140||-|pF|
|Crss|Reverse Transfer Capacitance|||||||-|1260||-|pF|
|RG|Gate Resistance|||VGS= 0.5V, f = 1MHz||||-|1.2||-|Ω|
|Qg(TOT)|Total Gate Charge at 10V|||VGS= 0 to 10V||||-|204||265|nC|
|Qg(5)|Total Gate Charge at 5V|||VGS= 0 to 5V||||-|100||130|nC|
|Qg(TH)|Threshold Gate Charge|||VGS= 0 to 1V||||-|10.9||14.2|nC|
|Qgs|Gate to Source Gate Charge|||||||-|33||-|nC|
|Qgs2|Gate Charge Threshold to Plateau|||||||-|22||-|nC|
|Qgd|Gate to Drain “Miller” Charge|||||||-|43||-|nC|



www.fairchildsemi.com 

FDB8832 Rev. A1 

**2** 

|**Electrical Characteristics**TJ= 25°C unless otherwise noted|**Electrical Characteristics**TJ= 25°C unless otherwise noted|**Electrical Characteristics**TJ= 25°C unless otherwise noted|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Units**|
|**Switching Characteristics**|||||||
|t(on)|Turn-On Time|VDD= 15V, ID= 80A<br>VGS= 5V, RGS= 1.5Ω|-|-|155|ns|
|td(on)|Turn-On DelayTime||-|24|-|ns|
|tr|Turn-On Rise Time||-|73|-|ns|
|td(off)|Turn-Off DelayTime||-|54|-|ns|
|tf|Turn-Off Fall Time||-|38|-|ns|
|toff|Turn-Off Time||-|-|149|ns|
|**Drain-Source Diode Characteristics**|||||||
|VSD|Source to Drain Diode Voltage|ISD= 75A|-|0.8|1.25|V|
|||ISD= 40A|-|0.8|1.0|V|
|trr|Reverse RecoveryTime|IF= 75A, di/dt = 100A/μs|-|59|77|ns|
|Qrr|Reverse RecoveryCharge|IF= 75A, di/dt = 100A/μs|-|67|87|nC|



## **Notes:** 

- **1:** Starting TJ = 25[o] C, L = 0.61mH, IAS = 64A, VDD = 30V, VGS = 10V. 

- **2:** Pulse width = 100s. 

www.fairchildsemi.com 

FDB8832 Rev. A1 

**3** 

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Typical Characteristics<br>1.2 350<br>CURRENT LIMITED<br>1.0 300 BY PACKAGE<br>250<br>0.8 VGS = 10V<br>200<br>0.6<br>150 V GS = 5V<br>0.4<br>100<br>0.2<br>50<br>0.0 0<br>0 25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>TC, CASE TEMPERATURE( [o] C) TC, CASE TEMPERATURE( [o] C)<br>Figure 1.  Normalized Power Dissipation vs Case  Figure 2.  Maximum Continuous Drain Current vs<br>Temperature              Case Temperature<br>2<br>1 DUTY CYCLE - DESCENDING ORDER<br>D = 0.50<br>      0.20<br>      0.10<br>      0.05 PDM<br>0.1<br>      0.02<br>0.01<br>t1<br>t2<br>0.01 NOTES:<br>DUTY FACTOR: D = t1/t2<br>PEAK T J  = P DM  x Z θ JC  x R θ JC  + T C<br>SINGLE PULSE<br>1E-3<br>10-5 10-4 10-3 10-2 10-1 100 101<br>t, RECTANGULAR  PULSE DURATION(s)<br>Figure 3.  Normalized Maximum Transient Thermal Impedance<br>10000<br>VGS = 10V TRANSCONDUCTANCE  TC = 25 [o] C<br>MAY LIMIT CURRENT  FOR TEMPERATURES<br>IN THIS REGION ABOVE 25 [o] C DERATE PEAK<br>CURRENT AS FOLLOWS:<br>1000 I = I25  175 - TC<br>150<br>100<br>SINGLE PULSE<br>10<br>10-5 10-4 10-3 10-2 10-1 100 101<br>t, RECTANGULAR PULSE DURATION(s)<br>Figure 4.  Peak Current Capability<br>, DRAIN CURRENT (A)<br>ID<br>POWER DISSIPATION MULIPLIER<br>IMPEDANCE, ZJC θ<br>NORMALIZED THERMAL<br>PEAK CURRENT (A)<br>,<br>IDM<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

FDB8832 Rev. A1 

**4** 

## **Typical Characteristics** 

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4000<br>500<br>If R = 0<br>1000 10us tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)<br>If R  ≠  0<br>tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]<br>100us 100<br>100<br>STARTING TJ = 25oC<br>10<br>LIMITEDBY PACKAGE 1ms 10 STARTING TJ = 150oC<br>1 OPERATION IN THIS  SINGLE PULSE<br>AREA MAY BE  TJ = MAX RATED 10ms<br>LIMITED BY r DS(on) TC = 25 [o] C DC<br>0.1 1<br>1 10 60 0.01 0.1 1 10 100 1000 5000<br>VDS, DRAIN TO SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (ms)<br>NOTE: Refer to Fairchild Application Notes AN7514 and AN7515<br>Figure 5.  Forward Bias Safe Operating Area Figure 6.  Unclamped Inductive Switching<br>Capability<br>200 200<br>PULSE DURATION = 80DUTY CYCLE = 0.5% MAX μ s V GS = 10V DUTY CYCLE = 0.5% MAXPULSE DURATION = 80 μ s<br>VDD = 5V V GS = 5V<br>150 150<br>TJ = 175 [o] C VGS = 3.5V<br>VGS = 3V<br>100 100<br>TJ = 25 [o] C<br>50 TJ = -55 [o] C 50<br>0 0<br>0 1 2 3 4 0.0 0.5 1.0 1.5<br>VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7.  Transfer Characteristics Figure 8.  Saturation Characteristics<br>4 1.6<br>PULSE DURATION = 80 μ s PULSE DURATION = 80 μ s<br>DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX<br>1.4<br>3<br>TJ = 175 [o] C<br>1.2<br>2<br>1.0<br>TJ = 25 [o] C<br>1<br>0.8<br>ID = 80A<br>VGS = 10V<br>0.6<br>0<br>-80 -40 0 40 80 120 160 200<br>2 4 6 8 10<br>VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE( [o] C)<br>Figure 9.  Drain to Source On-Resistance         Figure 10.  Normalized Drain to Source On<br>Variation vs Gate to Source Voltage  Resistance vs Junction Temperature<br>, DRAIN CURRENT (A)<br>D<br> I<br>, AVALANCHE CURRENT (A)<br>IAS<br>, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A)ID ID<br>)<br>Ω<br>m<br>( NORMALIZED<br>, DRAIN TO SOURCE<br>ON-RESISTANCE<br>rDS(on)<br> DRAIN TO SOURCE ON-RESISTANCE<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

FDB8832 Rev. A1 

**5** 

## **Typical Characteristics** 

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1.4 1.10<br>VGS = VDS ID = 250 μ A<br>1.2 ID = 250 μ A<br>1.05<br>1.0<br>0.8<br>1.00<br>0.6<br>0.4<br>0.95<br>0.2<br>0.0 0.90<br>-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200<br>TJ, JUNCTION TEMPERATURE( [o] C) TJ, JUNCTION TEMPERATURE ( [o] C)<br>Figure 11.  Normalized Gate Threshold Voltage vs  Figure 12.  Normalized Drain to Source<br>Junction Temperature Breakdown Voltage vs Junction Temperature<br>10<br>40000<br>ID = 80A<br>C iss<br>8<br>10000<br>VDD = 12V<br>Coss 6 VDD = 15V<br>VDD = 18V<br>1000 C rss 4<br>2<br>f = 1MHz<br>VGS = 0V<br>100 0<br>0.1 1 10 50 0 50 100 150 200 250<br>VDS, DRAIN TO SOURCE VOLTAGE (V) Qg ,  GATE CHARGE(nC)<br>NORMALIZED GATE<br>THRESHOLD VOLTAGE  BREAKDOWN VOLTAGE<br>NORMALIZED DRAIN TO SOURCE<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLTAGE(V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 13.  Capacitance vs Drain to Source Voltage** 

**Figure 14.  Gate Charge vs Gate to Source Voltage** 

www.fairchildsemi.com 

FDB8832 Rev. A1 

**6** 

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|---|---|---|
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Rev. I58 

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FDB8832 Rev. A1 

**7** 

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