# Power MOSFET, N Channel, 80 V, 110 A, 0.0024 ohm, TO-263 (D2PAK), Surface Mount ![Product image](https://novapart.co/image/farnell:3004000RL/) **URL**: https://novapart.co/products/FDB86363-F085/power-mosfet-n-channel-80-v-110-a-00024-ohm-to-263 **SKU**: FDB86363-F085 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €1.9300 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0038ohm; Rds(on) Test; Available until stocks are exhausted ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | Power Trench FDD | | Qualification | AEC-Q101 | | Power Dissipation | 300W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-263 (D2PAK) | | Drain Source Voltage Vds | 80V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 110A | | Drain Source On State Resistance | 0.0024ohm | | Gate Source Threshold Voltage Max | 3V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3004000RL/) ## **FDB86363-F085 80 V, 110 A, 2.4 m** Ω ## **N-Channel PowerTrench[® ] MOSFET** **80 V, 110 A, 2.4 m** Ω **D D** Typical RDS(on) = 2.0 mΩ at VGS = 10V, ID = 80 A **G** Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability **G S** RoHS Compliant **TO-263 S** Qualified to AEC Q101 FDB SERIES ## **Features** ## **Applications** Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switch for 12V Systems ## **MOSFET Maximum Ratings** TJ = 25°C unless otherwise noted. |**Symbol**|**Parameter**|**Ratings**|**Units**| |---|---|---|---| |VDSS|Drain-to-Source Voltage|80|V| |VGS|Gate-to-Source Voltage|±20|V| |ID|Drain Current - Continuous(VGS=10) (Note 1)
TC = 25°C|110|A| ||Pulsed Drain Current
TC = 25°C|See Figure 4|| |EAS|Single Pulse Avalanche Energy
(Note 2)|512|mJ| |PD|Power Dissipation|300|W| ||Derate Above 25oC|2.0|W/oC| |TJ, TSTG|Operatingand Storage Temperature|-55 to + 175|oC| |RθJC|Thermal Resistance, Junction to Case|0.5|oC/W| |RθJA|Maximum Thermal Resistance, Junction to Ambient
(Note 3)|43|oC/W| ## **Notes:** - 1: Current is limited by bondwire configuration. - 2: Starting TJ = 25°C, L = 0.25mH, IAS = 64A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche. - 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in[2 ] pad of 2oz copper. **Package Marking and Ordering Information** **Device Marking Device Package Reel Size Tape Width Quantity** ~~a~~ FDB86363 FDB86363-F085 D2-PAK(TO-263) 330mm 24mm 800 units Publication Order Number: FDB86363-F085/D ©2014 Semiconductor Components Industries,LLC. August-2017, Rev. 3 **1** **Electrical Characteristics** TJ = 25°C unless otherwise noted. |**Symbol**|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Units**| |---|---|---|---|---|---|---|---| |**Off Characteristics**|||||||| |BVDSS|Drain-to-Source Breakdown Voltage|ID= 250μA, VGS= 0V||80|-|-|V| |IDSS|Drain-to-Source Leakage Current|VDS= 80V,
VGS= 0V|TJ= 25oC|-|-|1|μA| ||||TJ= 175oC (Note 4)|-|-|1|mA| |IGSS|Gate-to-Source Leakage Current|VGS= ±20V||-|-|±100|nA| |**On Characteristics**|||||||| |VGS(th)|Gate to Source Threshold Voltage|VGS= VDS, ID= 250μA||2.0|3.0|4.0|V| |RDS(on)|Drain to Source On Resistance|ID= 80A,
VGS= 10V|TJ= 25oC|-|2.0|2.4|mΩ| ||||TJ= 175oC(Note 4)|-|3.8|4.3|mΩ| |**Dynamic Characteristics**|||||||| |Ciss|Input Capacitance|VDS= 40V, VGS= 0V,
f = 1MHz||-|10000|-|pF| |Coss|Output Capacitance|||-|1400|-|pF| |Crss|Reverse Transfer Capacitance|||-|95|-|pF| |Rg|Gate Resistance|f = 1MHz||-|3.3|-|Ω| |Qg(ToT)|Total Gate Charge at 10V|VGS= 0 to 10V||-|131|150|nC| |Qg(th)|Threshold Gate Charge|VGS= 0 to 2V||-|18|21|nC| |Qgs|Gate-to-Source Gate Charge|||-|47|-|nC| |Qgd|Gate-to-Drain “Miller“ Charge|||-|24|-|nC| |**Switching Characteristics**|||||||| |ton|Turn-On Time|VDD= 40V, ID= 80A,
VGS= 10V, RGEN= 6Ω||-|-|231|ns| |td(on)|Turn-On Delay|||-|38|-|ns| |tr|Rise Time|||-|129|-|ns| |td(off)|Turn-Off Delay|||-|64|-|ns| |tf|Fall Time|||-|40|-|ns| |toff|Turn-Off Time|||-|-|135|ns| |**Drain-Source Diode Characteristics**|||||||| |VSD|Source-to-Drain Diode Voltage|ISD=80A, VGS= 0V||-|-|1.25|V| |||ISD= 40A, VGS= 0V||-|-|1.2|V| |trr|Reverse-RecoveryTime|IF= 80A, dISD/dt = 100A/μs,
VDD=64V||-|88|101|ns| |Qrr|Reverse-RecoveryCharge|||-|129|157|nC| **Note:** - 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. **www.onsemi.com** **2** **==> picture [433 x 579] intentionally omitted <==** **----- Start of picture text -----**
Typical Characteristics
1.2 300
CURRENT LIMITED VGS = 10V
1.0 250 BY PACKAGE
CURRENT LIMITED
BY SILICON
0.8 200
0.6 150
0.4 100
0.2 50
0.0 0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE( [o] C) TC, CASE TEMPERATURE( [o] C)
Figure 1. Normalized Power Dissipation vs. Case Figure 2. Maximum Continuous Drain Current vs.
Temperature Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10 P DM
0.05
0.02
0.1 0.01 t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
SINGLE PULSE PEAK T J = P DM x Z θ JA x R θ JA + T C
0.01
10-5 10-4 10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
VGS = 10V
1000
100
TC = 25 [o] C
FOR TEMPERATURES
ABOVE 25 [o] C DERATE PEAK
10 CURRENT AS FOLLOWS:
I = I2 175 - TC
150
SINGLE PULSE
1
10-5 10-4 10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
, DRAIN CURRENT (A)
ID
POWER DISSIPATION MULTIPLIER
IMPEDANCE, ZJC θ
NORMALIZED THERMAL
PEAK CURRENT (A)
,
IDM
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**www.onsemi.com** **3** ## **Typical Characteristics** **==> picture [429 x 587] intentionally omitted <==** **----- Start of picture text -----**
1000
2000
If R = 0
1000 t AV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
100 100
100us STARTING TJ = 25 [o] C
10
OPERATION IN THIS
AREA MAY BE 10
LIMITED BY rDS(on) 1ms
1 SINGLE PULSE 10ms STARTING TJ = 150 [o] C
TJ = MAX RATED 100ms
TC = 25 [o] C
1
0.1 0.001 0.01 0.1 1 10 100 1000
1 10 100 200 tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
300 300
PULSE DURATION = 80 μ s
250 DUTY CYCLE = 0.5% MAX 100 VGS = 0 V
VDD = 5V
200 10
TJ = 175 [o] C TJ = 175 [o] C TJ = 25 [ o] C
150
TJ = 25 [o] C 1
100
TJ = -55 [o] C 0.1
50
0 0.01
2 3 4 5 6 7 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics
300 300
250 V GS 250 VGS
15V Top 15V Top
200 10V 8V 200 10V8V 5.5V
7V 7V
6V 6V
150 5.5V 150 5V 5.5V
5V Bottom 5V Bottom
100 100
5V
50 80 μ s PULSE WIDTH 50 80 μ s PULSE WIDTH
Tj=25 [o] C Tj=175 [o] C
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics Figure 10. Saturation Characteristics
, DRAIN CURRENT (A)
ID , AVALANCHE CURRENT (A)IAS
, DRAIN CURRENT (A)
ID , REVERSE DRAIN CURRENT (A)IS
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
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**www.onsemi.com 4** ## **Typical Characteristics** **==> picture [433 x 601] intentionally omitted <==** **----- Start of picture text -----**
30 2.0
ID = 80A PULSE DURATION = 80 μ s PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
25
1.6
20
TJ = 175 [o] C TJ = 25 [o] C
15 1.2
10
0.8
5 ID = 80A
VGS = 10V
0 0.4
2 4 6 8 10 -80 -40 0 40 80 120 160 200
VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE( [o] C)
Figure 11. RDSON vs. Gate Voltage Figure 12. Normalized RDSON vs. Junction
Temperature
1.5 1.10
VGS = VDS ID = 5mA
ID = 250 μ A
1.2
1.05
0.9
1.00
0.6
0.95
0.3
0.0 0.90
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE( [o] C) TJ, JUNCTION TEMPERATURE ( [o] C)
Figure 13. Normalized Gate Threshold Voltage vs. Figure 14. Normalized Drain to Source
Temperature Breakdown Voltage vs. Junction Temperature
100000 10
ID = 80A
Ciss 8 VDD = 32V
10000
VDD = 40V VDD = 48V
C oss 6
1000
4
100 Crss
2
f = 1MHz
VGS = 0V
10 0
0.1 1 10 100 0 30 60 90 120 150
VDS, DRAIN TO SOURCE VOLTAGE (V) Qg , GATE CHARGE(nC)
Figure 15. Capacitance vs. Drain to Source Figure 16. Gate Charge vs. Gate to Source
Voltage Voltage
) Ω
m
, DRAIN TO SOURCE NORMALIZED
ON-RESISTANCE (
rDS(on)
DRAIN TO SOURCE ON-RESISTANCE
NORMALIZED GATE
THRESHOLD VOLTAGE BREAKDOWN VOLTAGE
NORMALIZED DRAIN TO SOURCE
CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE(V)
GS
V
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