# Power MOSFET, N Channel, 40 V, 28 A, 1900 µohm, TO-263 (D2PAK), Surface Mount
**URL**: https://novapart.co/products/FDB8441/power-mosfet-n-channel-40-v-28-a-1900-ohm-to-263
**SKU**: FDB8441
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.2400
**Stock**: 10+
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipatio
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| No. Of Pins | 2Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 28A |
| Drain Source On State Resistance | 1900µohm |
| Gate Source Threshold Voltage Max | 2.8V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:1324784/)
## **Is Now Part of**
**To learn more about ON Semiconductor, please visit our website at www.onsemi.com**
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
**October 2011** FAIRCHILD es SEMICONDUCTOR® **FDB8441 N-Channel PowerTrench[®] MOSFET 40V, 120A, 2.5m** Ω **Features Applications** | Typ rDS(on) = 1.9mΩ at VGS = 10V, ID = 80A i| Powertrain Management | Typ Qg(10) = 215nC at VGS = 10V i | Solenoid and Motor Drivers | Low Miller Charge i| Electronic Steering | Low Qrr Body Diode i | Integrated Starter / Alternator | UIS Capability (Single Pulse and Repetitive Pulse) i| Distributed Power Architectures and VRMs | RoHS Compliant i | Primary Switch for 12V Systems
**==> picture [55 x 51] intentionally omitted <==**
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LEAD F R EE IMPLE
M
E
N
T
A
NOIT
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©2011 Fairchild Semiconductor Corporation FDB8441 Rev.A2
www.fairchildsemi.com
**1**
**MOSFET Maximum Ratings** TC = 25°C unless otherwise noted
|**Symbol**|**Parameter**|**Ratings**|**Units**|
|---|---|---|---|
|VDS|Drain to Source Voltage|40|V|
|VGS|Gate to Source Voltage|±20|V|
|ID|Drain Current Continuous (TC= 25oC, Silicon limited)|262*|A|
||Drain Current Continuous (TC= 100oC, Silicon limited)|185*||
||Drain Current Continuous (TC= 25oC, Package limited)|120||
||Drain Current Continuous (TA= 25oC, RθJA= 43oC/W)|28||
||Pulsed|See Figure 4||
|EAS|Single Pulse Avalanche Energy (Note 1)|947|mJ|
|PD|Power dissipation|300|W|
||Derate above 25oC|2|W/oC|
|TJ, TSTG|Operatingand Storage Temperature|-55 to 175|oC|
|*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
**Thermal Characteristics**||||
|RθJC|Thermal Resistance Junction to Case|0.5|oC/W|
|RθJA|Thermal Resistance Junction to Ambient(Note 2)|62|oC/W|
|RθJA|Thermal Resistance Junction to Ambient, 1in2copper pad area|43|oC/W|
## **Package Marking and Ordering Information**
|**Device Marking**|**Device Marking**|**Device**|**Package**|**Package**|**Reel Size**|**Reel Size**|**Tape Width**|**Tape Width**|**Tape Width**|**Quantity**|**Quantity**|**Quantity**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|FDB8441||FDB8441|TO-263AB||330mm||24mm|||800 units|||
|**Electrical Characteristics**TJ= 25°C unless otherwise noted|||||||||||||
|**Symbol**|**Parameter**|||**Test Conditions**||||**Min**|**Typ**||**Max**|**Units**|
|**Off Characteristics**|||||||||||||
|BVDSS|Drain to Source Breakdown Voltage|||ID= 250μA, VGS||= 0V||40|-||-|V|
|IDSS|Zero Gate Voltage Drain Current|||VDS= 32V
VGS= 0V||||-|-||1|μA|
|||||||TJ= 150°C||-|-||250||
|IGSS|Gate to Source Leakage Current|||VGS= ±20V||||-|-||±100|nA|
|**On Characteristics**|||||||||||||
|VGS(th)|Gate to Source Threshold Voltage|||VDS= VGS, ID= 250μA||||2|2.8||4|V|
|r
on)
DS(|Drain to Source On Resistance|||ID= 80A, VGS= 10V||||-|1.9||2.5|mΩ|
|||||ID= 80A, VGS= 10V,
TJ= 175°C||||-|3.3||4.3||
## **Dynamic Characteristics**
|Ciss|Input Capacitance|VDS= 25V, VGS= 0V,
f = 1MHz|-|15000|-|pF|
|---|---|---|---|---|---|---|
|Coss|Output Capacitance||-|1250|-|pF|
|Crss|Reverse Transfer Capacitance||-|685|-|pF|
|RG|Gate Resistance|VGS= 0.5V, f = 1MHz|-|1.1|-|Ω|
|Qg(TOT)|Total Gate Charge at 10V|VGS= 0 to 10V|-|215|280|nC|
|Qg(TH)|Threshold Gate Charge|VGS= 0 to 2V|-|29|38|nC|
|Qgs|Gate to Source Gate Charge||-|60|-|nC|
|Qgs2|Gate Charge Threshold to Plateau||-|32|-|nC|
|Qgd|Gate to Drain “Miller” Charge||-|49|-|nC|
www.fairchildsemi.com
FDB8441 Rev.A2
**2**
|**Electrical Characteristics**TJ= 25°C unless otherwise noted|**Electrical Characteristics**TJ= 25°C unless otherwise noted|**Electrical Characteristics**TJ= 25°C unless otherwise noted|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Units**|
|**Switching Characteristics**|||||||
|t(on)|Turn-On Time|VDD= 20V, ID= 35A
VGS= 10V, RGS= 1.5Ω|-|-|77|ns|
|td(on)|Turn-On DelayTime||-|23|-|ns|
|tr|Turn-On Rise Time||-|24|-|ns|
|td(off)|Turn-Off DelayTime||-|75|-|ns|
|tf|Turn-Off Fall Time||-|17.9|-|ns|
|toff|Turn-Off Time||-|-|147|ns|
|**Drain-Source Diode Characteristics**|||||||
|VSD|Source to Drain Diode Voltage|ISD= 35A|-|0.8|1.25|V|
|||ISD= 15A|-|0.8|1.0|V|
|trr|Reverse RecoveryTime|IF= 35A, di/dt = 100A/μs|-|52|68|ns|
|Qrr|Reverse RecoveryCharge|IF= 35A, di/dt = 100A/μs|-|76|99|nC|
## **Notes:**
- **1:** Starting TJ = 25[o] C, L = 0.46mH, IAS = 64A.
- **2:** Pulse width = 100s.
www.fairchildsemi.com
FDB8441 Rev.A2
**3**
**==> picture [434 x 381] intentionally omitted <==**
**----- Start of picture text -----**
Typical Characteristics
1.2 300
1.0 250
VGS = 10V
0.8 200
0.6 150
0.4 100
CURRENT LIMITED
BY PACKAGE
0.2 50
0.0 0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC, CASE TEMPERATURE( [o] C) TC, CASE TEMPERATURE( [o] C)
Figure 1. Normalized Power Dissipation vs Case Figure 2. Maximum Continuous Drain Current vs
Temperature Case Temperature
2
1 DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.1 0.05 P DM
0.02
0.01
t1
0.01 t2
NOTES:
DUTY FACTOR: D = t 1 /t 2
PEAK TJ = PDM x Z θ JC x R θ JC + TC
SINGLE PULSE
1E-3
10-5 10-4 10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION(s)
, DRAIN CURRENT (A)
ID
POWER DISSIPATION MULIPLIER
IMPEDANCE, ZJC θ
NORMALIZED THERMAL
**----- End of picture text -----**
## **Figure 3. Normalized Maximum Transient Thermal Impedance**
**==> picture [431 x 191] intentionally omitted <==**
**----- Start of picture text -----**
10000
V GS = 10V TRANSCONDUCTANCE MAY LIMIT CURRENT TC = 25 [o] C
FOR TEMPERATURES
IN THIS REGION
ABOVE 25 [o] C DERATE PEAK
CURRENT AS FOLLOWS:
1000 I = I25 175 - T 150 C
100
SINGLE PULSE
50
10-5 10-4 10-3 10-2 10-1 1 10
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
PEAK CURRENT (A)
,
IDM
**----- End of picture text -----**
www.fairchildsemi.com
FDB8441 Rev.A2
**4**
## **Typical Characteristics**
**==> picture [433 x 597] intentionally omitted <==**
**----- Start of picture text -----**
4000 500
If R = 0
1000 10us If R tAV = (L)(I ≠ 0 AS)/(1.3*RATED BVDSS - VDD)
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
100 100us
STARTING T J = 25 o C
10
LIMITED 10
BY PACKAGE 1ms STARTING TJ = 150oC
1 OPERATION IN THIS SINGLE PULSE
10ms
AREA MAY BE TJ = MAX RATED
LIMITED BY r DS(on) TC = 25 [o] C DC
0.1 1
1 10 100 0.01 0.1 1 10 100 1000 5000
VDS, DRAIN TO SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching
Capability
160 160
PULSE DURATION = 80 μ s VGS = 10V PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX VGS = 5V DUTY CYCLE = 0.5% MAX
VDD = 5V
120 120
VGS = 4.5V
TJ = 175 [o] C
80 80 V GS = 4V
TJ = 25 [o] C
TJ = -55 [o] C
40 40
VGS = 3.5V
0 0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 1 2 3 4
VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics
50 1.8
PULSE DURATION = 80 μ s PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
1.6
40
TJ = 25 [o] C 1.4
30
TJ = 175 [o] C 1.2
20
1.0
10
0.8 ID = 80A
VGS = 10V
0 0.6
3 4 5 6 7 8 9 10 -80 -40 0 40 80 120 160 200
VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE( [o] C)
Figure 9. Drain to Source On-Resistance Figure 10. Normalized Drain to Source On
Variation vs Gate to Source Voltage Resistance vs Junction Temperature
, DRAIN CURRENT (A)
D
I , AVALANCHE CURRENT (A)
IAS
, DRAIN CURRENT (A)
ID , DRAIN CURRENT (A)ID
)
Ω
m
, DRAIN TO SOURCE ( NORMALIZED
ON-RESISTANCE
rDS(on)
DRAIN TO SOURCE ON-RESISTANCE
**----- End of picture text -----**
www.fairchildsemi.com
FDB8441 Rev.A2
**5**
## **Typical Characteristics**
**==> picture [433 x 378] intentionally omitted <==**
**----- Start of picture text -----**
1.2 1.15
VGS = VDS ID = 250 μ A
ID = 250 μ A
1.10
1.0
1.05
0.8
1.00
0.6
0.95
0.4 0.90
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE( [o] C) TJ, JUNCTION TEMPERATURE ( [o] C)
Figure 11. Normalized Gate Threshold Voltage vs Figure 12. Normalized Drain to Source
Junction Temperature Breakdown Voltage vs Junction Temperature
40000 10
Ciss ID = 80A
8 V DD = 15V
10000
VDD = 25V
6
Coss VDD = 20V
1000 Crss 4
2
f = 1MHz
VGS = 0V
100 0
0.1 1 10 50 0 50 100 150 200 250
VDS, DRAIN TO SOURCE VOLTAGE (V) Qg , GATE CHARGE(nC)
NORMALIZED GATE
THRESHOLD VOLTAGE BREAKDOWN VOLTAGE
NORMALIZED DRAIN TO SOURCE
CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE(V)
GS
V
**----- End of picture text -----**
**Figure 13. Capacitance vs Drain to Source Figure 14. Gate Charge vs Gate to Source Voltage Voltage**
www.fairchildsemi.com
FDB8441 Rev.A2
**6**
## **TRADEMARKS**
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.
2Cool™ FPS™ PDP SPM™ The Power Franchise[®] AccuPower™ F-PFS™ Power-SPM™ D ® Auto-SPM™ FRFET[®] PowerTrench[®] wer AX-CAP™* Global Power Resource[SM] PowerXS™ P...We tm BitSiC[®] Green FPS™ Programmable Active Droop™ TinyBoost™ Build it Now™ Green FPS™ e-Series™ QFET[®] TinyBuck™ CorePLUS™ G _max_ ™ QS™ TinyCalc™ CorePOWER™ GTO™ Quiet Series™ TinyLogic[®] _CROSSVOLT_ ™ IntelliMAX™ RapidConfigure™ TINYOPTO™ CTL™ ISOPLANAR™ ™ TinyPower™ TinyPWM™ Current Transfer Logic™ Marking Small Speakers Sound Louder DEUXPEED[®] and Better™ Saving our world, 1mW/W/kW at a time™ TinyWire™TranSiC[®] Dual Cool™ MegaBuck™ SignalWise™ TriFault Detect™ EcoSPARK[®] MICROCOUPLER™ SmartMax™ TRUECURRENT[®] * EfficentMax™ MicroFET™ SMART START™ ESBC™ MicroPak™ Solutions for Your Success™ μSerDes™ ® MicroPak2™ SPM[®] ~~oo~~ tm MillerDrive™ STEALTH™ "Z.... Fairchild[®] MotionMax™ SuperFET[®] UHC[®] Fairchild Semiconductor[®] Motion-SPM™ SuperSOT™-3 Ultra FRFET™ FACT Quiet Series™ mWSaver™ SuperSOT™-6 UniFET™ FACT[®] OptoHiT™ SuperSOT™-8 VCX™ FAST[®] OPTOLOGIC[®] SupreMOS[®] VisualMax™ FastvCore™ OPTOPLANAR[®] SyncFET™ VoltagePlus™ FETBench™ ® Sync-Lock™ XS™ FlashWriter[® ] * tm ®*
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
## **DISCLAIMER**
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
## **LIFE SUPPORT POLICY**
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are 2. intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
## **ANTI-COUNTERFEITING POLICY**
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
## **PRODUCT STATUS DEFINITIONS Definition of Terms**
|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.|
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Rev. I58
FDB8441 Rev.A2
**7**
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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